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A94 Transistor (IC) Datasheet. Cross Reference Search. A94 Equivalent

Type Designator: A94

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 400

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of A94 transistor: SOT89

A94 Transistor Equivalent Substitute - Cross-Reference Search

A94 PDF:

1.1. 2sb941_3ca941.pdf Size:181K _update

A94
A94

2SB941(3CA941) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于低频功率放大./Purpose: For low-frequency power amplification. 特点:大电流 HFE 曲线特性好、集电-发射极饱和压降小、采用 TO-220 全包封不需云母绝缘可 直接安装散热片。/Feature: High forward current transfer ratio Hfe which has satisfactory linearity,low collector to emi

1.2. 2sa940a_3ca940a.pdf Size:227K _update

A94
A94

2SA940A(3CA940A) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于功率放大和帧频输出。 Purpose: Power amplifier applications, vertical output applications. 特点:于 2SC2073A(3DA2073A)互补。 Features: Complementary to 2SC2073A(3DA2073A). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -150 V CBO V -1

1.3. wtma94.pdf Size:242K _update

A94
A94

WTMA94 PNP Epitaxial Planar Transistors SOT-89 P b Lead(Pb)-Free 1 2 *High Voltage 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Rating Symbol Limits Unit VCBO V Collector-Base Voltage -400 VCEO V Collector-Emitter Voltage -400 VEBO V Emitter-Base Voltage -5 Collector Current - Continuous IC mA -200 ICM Collector Current - Pulsed mA -300 Collect

1.4. 2sa940_3ca940.pdf Size:375K _update

A94
A94

2SA940(3CA940) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于功率放大和帧频输出。 Purpose: Power amplifier applications, vertical output applications. 特点:于 2SC2073(3DA2073)互补。 Features: Complementary to 2SC2073(3DA2073). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -150 V CBO V -150 V

1.5. 2sa940a.pdf Size:165K _toshiba

A94
A94

1.6. 2sa949.pdf Size:172K _toshiba

A94
A94

1.7. ksa940.pdf Size:59K _fairchild_semi

A94
A94

KSA940 Vertical Deflection Output Power Amplifier Complement to KSC2073 TO-220 1 1.Base 2.Collector 3.Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage - 150 V VCEO Collector-Emitter Voltage - 150 V VEBO Emitter-Base Voltage - 5 V IC Collector Current - 1.5 A IB Base Current -

1.8. mpsa94.pdf Size:20K _diodes

A94
A94

SI I O A A SA HI H O TA T A SISTO ISS A H T i I I TI T I i II i i TO A SO T A I ATI S T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T T I A HA A T ISTI S a Ta T I T IT DITI II V V I I V I II i V V I I V I II i V V I I V I i V V I I V I II I V V I II I V V i I V V I II i V V I I i V I

1.9. mpsa94.pdf Size:135K _utc

A94
A94

UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter voltage: V =-400V CEO * Collector Dissipation: P =625mW D(MAX) * Low collector-Emitter saturation voltage ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MPSA94L-AB3-R MPSA94G-AB3-R SOT-89 B C E Tape Reel

1.10. mmbta94.pdf Size:111K _utc

A94
A94

UNISONIC TECHNOLOGIES CO., LTD MMBTA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter Voltage: V =-400V CEO * Collector Dissipation: P =350mW C(MAX) * Low Collector-Emitter Saturation Voltage APPLICATIONS * Telephone Switching * High Voltage Switch Lead-free: MMBTA94L Halogen-free: MMBTA94G ORDERING INFORMATION Ordering Number Pin Assig

1.11. pzta94.pdf Size:105K _utc

A94
A94

UNISONIC TECHNOLOGIES CO., LTD PZTA94 Preliminary PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES * Collector-Emitter voltage: V =-400V CEO * Collector Dissipation: P =625mW D(MAX) * Low collector-Emitter saturation voltage ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 PZTA94L-AA3-R PZTA94G-AA3-R SOT-223 B

1.12. bcpa94.pdf Size:218K _secos

A94
A94

BCPA94 -0.5 A, -400 V PNP Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The BCPA94 is designed for application requires high voltage. SOT-89 FEATURES ? High Voltage:VCEO=400V (min) at IC=1mA ? High Current gain:IC=300mA at 25°C ? Complementary with BCPA44 MARKING A94

1.13. mmbta94.pdf Size:277K _secos

A94
A94

MMBTA94 PNP Silicon -400V, -0.1A, 350mW Elektronische Bauelemente Epitaxial Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES ? High Voltage Transistor A L 3 3 Top View C B MARKING 1 1 2 Product Marking Code 2 K E MMBTA44 4D D H J F G SYMBOL Millimeter Millimeter REF. REF. Collector Min. Max. Min. Max.

1.14. pzta94.pdf Size:968K _secos

A94
A94

PZTA94 PNP Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZTA94 is designed for application requires high voltage. Features *High Current Gain: IC=300mA at 25 oC *High Voltage: VCEO=400V (min) at IC=1mA Millimeter Millimeter *Complementary With PZTA44 REF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. C 2.90

1.15. csa940_csc2073.pdf Size:204K _cdil

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A94

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSA940, CSC2073 CSA940 PNP PLASTIC POWER TRANSISTOR CSC2073 NPN PLASTIC POWER TRANSISTOR Power Amplifier Applications and Vertical Output Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 1

1.16. 2sa940.pdf Size:197K _jmnic

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A94

JMnic Product Specification Silicon PNP Power Transistors 2SA940 DESCRIPTION ·With TO-220 package ·Complement to type 2SC2073 APPLICATIONS ·Power amplifier applications ·Vertical output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collecto

1.17. mpsa94.pdf Size:289K _kec

A94
A94

SEMICONDUCTOR MPSA94 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B C FEATURES ·High Breakdown Voltage. ·Complementary to MPSA44. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25?) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO -400 V Collector-Base Voltage H 0.45 _ H J 14.00 + 0.50 K 0.55

1.18. mpsa94a.pdf Size:69K _kec

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A94

SEMICONDUCTOR MPSA94A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. B C FEATURES High Breakdown Voltage. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D MAXIMUM RATING (Ta=25 ) D 0.45 E 1.00 CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 0.85 VCBO -480 V Collector-Base Voltage H 0.45 _ H J 14.00 + 0.50 K 0.55 MAX VCEO -480 V Collector-

1.19. 2sa940.pdf Size:130K _inchange_semiconductor

A94
A94

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA940 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -150V(Min) ·DC Current Gain : hFE= 40-140@ IC= -0.5A ·Complement to Type 2SC2073 APPLICATIONS ·Designed for use in general purpose power amplifier , vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL

1.20. mmbta94.pdf Size:297K _htsemi

A94
A94

MMBTA94 TRANSISTOR(PNP) SOT–23 FEATURES ? High Breakdown Voltage MARKING:4D 1. BASE MAXIMUM RATINGS (Ta=25? unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR VCBO Collector-Base Voltage -400 V V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -100 mA C P Collector Power Dissipation 350 mW C R Th

1.21. a94.pdf Size:425K _htsemi

A94
A94

A94 TRANSISTOR (PNP) FEATURES SOT-89-3L High voltage 1 MAXIMUM RATINGS (Ta=25? unless otherwise noted) 2 Symbol Parameter Value Units 3 1. BASE VCBO Collector-Base Voltage -400 V 2. COLLECTOR VCEO Collector-Emitter Voltage -400 V 3. EMITTER VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.2 A PC Collector Power Dissipation 0.5 W Tj Junction Tempe

1.22. mmbta94.pdf Size:236K _gsme

A94
A94

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GMA94 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic ???? Symbol ?? Rating ??? Unit ?? VCEO -400 V Collector-Emitter Voltage ???-???? Collector-Base Voltage ???-??? VCBO -400 V Emitter-Base Voltage ??????? VEBO -7 V

1.23. a94.pdf Size:292K _lge

A94
A94

A94(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features High voltage MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V Collector Current -Continuous IC -0.2 A Collector Power Dissipation PC 0.625 W Junction T

1.24. 2sa940.pdf Size:223K _lge

A94
A94

2SA940(PNP) TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Wide safe Operating Area. Complementary to 2SC2703 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Paramenter Value Units VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collect

1.25. mpsa94.pdf Size:1953K _wietron

A94
A94

MPSA94 High-Voltage PNP Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -400 Vdc Collector-Base Voltage VCBO -400 Vdc Emitter-Base VOltage VEBO -5.0 Vdc Collector Current IC -200 mAdc PD 0.625 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55 to +150 S

1.26. mmbta94.pdf Size:619K _wietron

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A94

MMBTA94 COLLECTOR High-Voltage PNP Transistor Surface Mount 3 SOT-23 3 P b Lead(Pb)-Free 1 BASE 1 2 2 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V -400 Vdc CEO Collector-Base Voltage VCBO -400 Vdc Emitter-Base Voltage VEBO -6.0 Vdc Collector Current-Continuous IC mAdc -150 Thermal Characteristics Characteristics Symbol Max Unit Maximum Power Di

1.27. pzta94.pdf Size:266K _wietron

A94
A94

PZTA94 High-Voltage PNP Transistor COLLECTOR 2,4 4 Surface Mount 1. BASE 2.COLLECTOR 3.EMITTER 1 1 2 4.COLLECTOR P b Lead(Pb)-Free 3 BASE 3 SOT-223 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V CEO -400 Vdc VCBO Collector-Base Voltage -400 Vdc Emitter-Base VOltage VEBO -6.0 Vdc IC mAdc Collector Current-Continuous -300 PD W Total Device

1.28. mmbta94lt1.pdf Size:381K _willas

A94
A94

FM120-M WILLAS THRU MMBTA94LT1 PNP EPITAXIAL PLANAR BARRIER RECTIFIERS -20V- 200V TRANSISTOR FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent powe We declare that the material of producter dissipation offers better reverse leakage current and th rmal resistance. SOD-123H compliance with RoHS requi

1.29. hmpsa94.pdf Size:52K _hsmc

A94
A94

Spec. No. : HE6355 HI-SINCERITY Issued Date : 1993.01.15 Revised Date : 2005.03.30 MICROELECTRONICS CORP. Page No. : 1/5 HMPSA94 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMPSA94 is designed for application that requires high voltage. Features TO-92 • High Breakdown Voltage: 400V(Min.) at IC=1mA • High Current: IC=300mA at 25°C • Complementary to HMPSA44 Absolute Maximu

1.30. hmbta94.pdf Size:38K _hsmc

A94
A94

Spec. No. : HN200209 HI-SINCERITY Issued Date : 2000.11.01 Revised Date : 2004.08.17 MICROELECTRONICS CORP. Page No. : 1/4 HMBTA94 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBTA94 is designed for application that requires high voltage. SOT-23 Features • High Breakdown Voltage: VCEO=400(Min.) at IC=1mA • Complementary to HMBTA44 Absolute Maximum Ratings • Maximum Tempera

1.31. mpsa94.pdf Size:249K _cystek

A94
A94

Spec. No. : C309A3 Issued Date : 2003.06.30 CYStech Electronics Corp. Revised Date : 2011.12.13 Page No. : 1/6 High Voltage PNP Epitaxial Planar Transistor MPSA94 Description • High breakdown voltage. (BV =-400V) CEO • Low saturation voltage, typically V = -0.08V at Ic/I =-10mA/-1mA. CE(sat) B • Wide SOA (safe operation area). • Complementary to MPSA44. • Pb-f

1.32. btpa94a3.pdf Size:155K _cystek

A94
A94

Spec. No. : C309A3 Issued Date : 2003.06.30 CYStech Electronics Corp. Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTPA94A3 Description • High breakdown voltage. (BV =-400V) CEO • Low saturation voltage, typically V = -0.07V at Ic/I =-10mA/-1mA. CE(sat) B • Wide SOA (safe operation area). • Complementary to BTNA44A3. Symbol Outline

1.33. btpa94n3.pdf Size:254K _cystek

A94
A94

Spec. No. : C309N3-H Issued Date : 2003.06.30 CYStech Electronics Corp. Revised Date : 2011.02.17 Page No. : 1/6 High Voltage PNP Epitaxial Planar Transistor BVCEO -400V IC -0.15A VCESAT(max) -0.3V BTPA94N3 Description • High breakdown voltage. (BV =-400V) CEO • Low saturation voltage, typically V = -0.07V at Ic/I =-10mA/-1mA. CE(sat) B • Wide SOA (safe operation a

1.34. a94.pdf Size:359K _can-sheng

A94
A94

TO-92 Plastic-Encapsulate Transistors A94 TRANSISTOR (PNP) TO-92 FEATURES FEATURES FEATURES FEATURES 1.EMITTER High voltage 2.BASE MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25℃ unless otherwise noted) MAXIMUM RATINGS 3.COLLECTOR 1 2 3 Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units VCBO Collector

1.35. mmbta94t.pdf Size:505K _blue-rocket-elect

A94
A94

MMBTA94T(BR3CG94T) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package. 特征 / Features 耐压高。 High voltage. 用途 / Applications 高电压控制电路。 High voltage control circuit. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 1 2 3 PIN1:Base

1.36. lmbta94lt1g.pdf Size:106K _lrc

A94
A94

LESHAN RADIO COMPANY, LTD. LMBTA94LT1G LMBTA94LT1G S-LMBTA94LT1G PNP EPITAXIAL PLANAR TRANSISTOR We declare that the material of product 3 compliance with RoHS requirements. Description 1 The LMBTA94LT1G is designed for application 2 that requires high voltage. SOT– 23 Features • High Breakdown Voltage: VCEO=400(Min.) at IC=1mA • Complementary to LMBTA94LT1G COLLECTOR

1.37. mmbta94.pdf Size:114K _first_silicon

A94
A94

SEMICONDUCTOR MMBTA94 TECHNICAL DATA PNP EPITAXIAL PLANAR TRANSISTOR 3 We declare that the material of product 2 compliance with RoHS requirements. 1 Description SOT–23 The MMBTA94 is designed for application that requires high voltage. COLLECTOR Features 3 • High Breakdown Voltage: VCEO=400(Min.) at IC=1mA 1 BASE DEVICE MARKING 2 MMB TA94LT1G = 4Z EMITTER Absolute

1.38. a9452.pdf Size:1117K _kexin

A94
A94

SMD Type MOSFET N-Channel MOSFET A9452 ■ Features ● VDS (V) = 20V 1.70 0.1 ● ID = 4 A (VGS = ±12V) ● RDS(ON) < 0.038Ω (VGS = 10V) ● RDS(ON) < 0.05Ω (VGS = 4.5V) ● RDS(ON) < 0.08Ω (VGS = 2.5V) ● Marking:A9452 0.42 0.1 0.46 0.1 D G 1.Gate 2.Drain S 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Volt

1.39. mmbta94.pdf Size:1176K _kexin

A94
A94

SMD Type Transistors PNP Transistors MMBTA94 (KMBTA94) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● High Breakdown Voltage ●Complement to MMBTA44 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -400 Collector - Emitter Vo

1.40. a9451.pdf Size:1156K _kexin

A94
A94

SMD Type MOSFET P-Channel MOSFET A9451 ■ Features ● VDS (V) =-20V 1.70 0.1 ● ID =-2.3A (VGS =±12V) ● RDS(ON) < 0.135Ω (VGS =-4.5V) ● RDS(ON) <0.240Ω (VGS =-2.5V) ● Marking: A9451 0.42 0.1 0.46 0.1 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±12

1.41. mpsa94.pdf Size:807K _shenzhen-tuofeng-semi

A94
A94

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors MPSA94 TRANSISTOR (PNP) FEATURES TO-92 Power dissipation PCM: 0.625 W (Tamb=25℃) Collector current 1. EMITTER ICM: -0.2 A 2. BASE Collector-base voltage 3. COLLECTOR V(BR)CBO: -400 V Operating and storage junction temperature range 1 2 3 TJ, Tstg: -55℃ to +150

See also transistors datasheet: 2SD2413 , 2SD965A , 3DK2222A , A1015 , A42 , A44 , A733 , A92 , AC125 , B772 , C1815 , C945 , CJF715 , D882 , HM4033 , HM879 , KTA1668 .

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