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C1815
  C1815
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C1815
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C1815
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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
C1815 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

C1815 Transistor Datasheet. Parameters and Characteristics.

Type Designator: C1815

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.15

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 80

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 130

Noise Figure, dB: -

Package of C1815 transistor: SOT23

C1815 Equivalent Transistors - Cross-Reference Search

C1815 PDF doc:

1.1. 2pc1815.pdf Size:50K _philips

C1815
C1815
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor Product specification 2004 Nov 05 Supersedes data of 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 FEATURES PINNING Low current (max. 150 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 collector APPLICATIONS 3 emitter General purpose switching and amplification, e.g. audio amplifier driver stages. 1 handbook, halfpage 2 2 DESCRIPTION 3 1 NPN transistor in a TO-92 (SOT54) plastic package. PNP complement: 2PA1015. 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME DESCRIPTION VERSION 2PC1815 SC-43A plastic single-ended leaded (through hole) package; 3 leads SOT54 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 60 V

1.2. 2pc1815_3.pdf Size:47K _philips

C1815
C1815
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor 1999 May 28 Product specification Supersedes data of 1997 Mar 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 FEATURES PINNING Low current (max. 150 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 collector APPLICATIONS 3 emitter General purpose switching and amplification, e.g. audio amplifier driver stages. 1 handbook, halfpage 2 2 DESCRIPTION 3 1 NPN transistor in a TO-92 (SOT54) plastic package. PNP complement: 2PA1015. 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 60 V VCEO collector-emitter voltage open base - 50 V VEBO emitter-base voltage open collector - 5V IC collector current (DC) - 150 mA ICM peak collector cu

1.3. 2sc1815-t.pdf Size:213K _toshiba

C1815
C1815

1.4. 2sc1815l.pdf Size:308K _toshiba

C1815
C1815
2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Unit: mm Low Noise Amplifier Applications High breakdown voltage, high current capability : V = 50 V (min), I = 150 mA (max) CEO C Excellent linearity of h FE : hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : h (I = 0.1 mA)/h (I = 2 mA) = 0.95 (typ.) FE C FE C Low noise: NF = 0.2dB (typ.) (f = 1 kHz). Complementary to 2SA1015 (L). (O, Y, GR class). Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V JEDEC TO-92 Collector current IC 150 mA JEITA SC-43 Base current IB 50 mA Collector power dissipation PC 400 mW TOSHIBA 2-5F1B Junction temperature Tj 125 C Weight: 0.21 g (typ.) Storage temperature range Tstg -55~125 C Electrical Characteristics (Ta = = 25C) = = Characteristics Symbol

1.5. 2sc1815.pdf Size:272K _toshiba

C1815
C1815
2SC1815 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Unit: mm Driver Stage Amplifier Applications High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) Excellent hFE linearity: hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Low noise: NF = 1dB (typ.) at f = 1 kHz Complementary to 2SA1015 (O, Y, GR class) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA JEDEC TO-92 Base current IB 50 mA JEITA SC-43 Collector power dissipation PC 400 mW Junction temperature Tj 125 C TOSHIBA 2-5F1B Storage temperature range Tstg -55~125 C Weight: 0.21 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and

1.6. ksc1815.pdf Size:44K _fairchild_semi

C1815
C1815
KSC1815 Audio Frequency Amplifier & High Frequency OSC Complement to KSA1015 Collector-Base Voltage : VCBO= 50V TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current 150 mA IB Base Current 50 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 125 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB=60V, IE=0 0.1 A IEBO Emitter Cut-off Current VEB=5V, IC=0 0.1 A hFE1 DC Current Gain VCE=6V, IC=2mA 70 700 hFE2 VCE=6V, IC=150mA 25 VCE (sat) Collector-Emitter Saturation Voltage IC=100mA, IB=10mA 0.1 0.25 V VBE (sat) Base-Emitter Saturation Voltage IC=100mA, IB=10mA 1.0 V fT Current Gain Ba

1.7. 2sc1815.pdf Size:227K _utc

C1815
C1815
UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR ? FEATURES * Collector-Emitter voltage: BV =50V CEO * Collector current up to 150mA * High h linearity FE * Complimentary to UTC 2SA1015 ? SYMBOL ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC1815L-x-T92-B 2SC1815G-x-T92-B TO-92 E C B Tape Box 2SC1815L-x-T92-K 2SC1815G-x-T92-K TO-92 E C B Bulk 2SC1815L-x-T92-R 2SC1815G-x-T92-R TO-92 E C B Tape Reel www.unisonic.com.tw 1 of 4 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R201-006.K 2SC1815 NPN SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified ) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage V 60 V CBO Collector-emitter voltage V 50 V CEO Emitter-Base Voltage V 5 V EBO Collector Current I 150 mA C Base Current I 50 mA B Power Dissipation(T =25°C) P 625 mW A D

1.8. c1815t.pdf Size:393K _secos

C1815
C1815
C1815T 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H ? Power Dissipation ?Emitter CLASSIFICATION OF hFE (1) J ?Collector ?Base A D Product-Rank C1815T-O C1815T-Y C1815T-GR Millimeter REF. B Min. Max. Range 70~140 120~240 200~400 A 4.40 4.70 K B 4.30 4.70 C 12.70 - D 3.30 3.81 E 0.36 0.56 E C F F 0.36 0.51 G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ?? ?? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 150 mA Collector Power Dissipation PC 400 mW Junction, Storage Temperature TJ, TSTG 125, -55 ~ 125 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ

1.9. c1815.pdf Size:174K _secos

C1815
C1815
C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURE A L Power Dissipation 3 3 Top View C B 1 1 2 2 K E Collector MARKING: HF 3 D H J F G 1 Base Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.04 G - 0.18 2 B 2.10 2.80 H 0.40 0.60 Emitter C 1.20 1.60 J 0.08 0.20 D 0.89 1.40 K 0.6 REF. E 1.78 2.04 L 0.85 1.15 F 0.30 0.50 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VEBO 5 V Collector Current - Continuous IC 150 mA Collector Power Dissipation Pc 200 mW Junction, Storage Temperature TJ, TSTG 150, -55 ~ 150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Co

1.10. csc1815.pdf Size:247K _cdil

C1815
C1815
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC1815 TO-92 Plastic Package B C E Audio Frequency General Purpose and Driver Stage Amplifier Applications. Complementary CSA1015 ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage 60 V VCEO Collector Emitter Voltage 50 V VEBO Emitter Base Voltage 5 V IC Collector Current Continuous 150 mA IB Base Current 50 mA PC Collector Power Dissipation 625 mW Tj, Tstg -55 to +125 ?C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth(j-c) Junction to case 250 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNITS ICBO VCB =60V, IE=0 Collector Cut off Current 100 nA IEBO VEB=5V, IC = 0 Emitter Cut off Current 100 nA *hFE IC =2mA, VCE=6V DC Current Gain 70 700 hFE IC =150mA, VC

1.11. ktc1815.pdf Size:803K _kec

C1815
C1815
SEMICONDUCTOR KTC1815 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ·Excellent hFE Linearity : hFE(2)=100(Typ.) at VCE=6V, IC=150mA : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). ·Low Noise : NF=1dB(Typ.). at f=1kHz. ·Complementary to KTA1015. MAXIMUM RATING (Ta=25?) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5V IC Collector Current 150 mA IB Base Current 50 mA PC Collector Power Dissipation 625 mW Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=60V, IE=0 Collector Cut-off Current - - 0.1 ? A IEBO VEB=5V, IC=0 Emitter Cut-off Current - - 0.1 ? A hFE(1) (Note) VCE=6V, IC=2mA 70 - 700 DC Current Gain hFE(2) VCE=6V, IC=150mA 25 100 - VCE(sat) IC=100mA, IB=10mA Collector-Emitter

1.12. 2sc1815-m.pdf Size:168K _microelectronics

C1815
C1815

1.13. c1815.pdf Size:830K _htsemi

C1815
C1815
C1815 TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation 1. BASE MARKING : C1815=HF 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 50 V Collector cut-off current ICBO VCB=60V, IE=0 0.1 uA Collector cut-off current ICEO VCE=50V, IB=0 0.1 uA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 uA DC current gain hFE VCE= 6V, IC= 2mA 130 400 Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.25 V Base-emit

1.14. c1815_sot-23.pdf Size:218K _lge

C1815
C1815
C1815 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING : C1815=HF Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 50 V Collector cut-off current ICBO VCB=60 V, IE=0 0.1 A Collector cut-off current ICEO VCE=50V, IB=0 0.1 uA Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 uA DC current gain hFE VCE= 6V, IC= 2mA 130 400 Collector-emitter saturation voltage

1.15. c1815_to-92.pdf Size:180K _lge

C1815
C1815
C1815 Transistor(NPN) TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Voltage Dimensions in inches and (millimeters) IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 400 mW Tj Junction Temperature 125 ? Tstg Storage Temperature -55-125 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC= 0. 1mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100uA, IC=0 5 V Collector cut-off current ICBO VCB= 60V,IE=0 0.1 uA Collector cut-off current ICEO VCE= 50V, IB=0 0.1 uA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 uA DC current gain hFE VCE= 6 V, IC= 2mA 70 700

1.16. c1815lt1.pdf Size:230K _wietron

C1815
C1815
C1815LT1 C1815LT1 TRANSISTOR (NPN) SOT-23 * “G” Lead(Pb)-Free 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM: 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM: 0.15 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V Ic= 100µA, IE=0 60 V (BR)CBO 50 Collector-emitter breakdown voltage V(BR)CEO Ic = 0.1mA, IB =0 V Collector cut-off current I V =60V, I =0 0.1 µA CBO CB E Collector cut-off current I V =50V, I =0 0.1 µA CEO CE B Emitter cut-off current I V = 5V, I =0 0.1 µA EBO EB C DC current gain h V = 6V, I = 2mA 130 400 FE(1) CE C Collector-emitter saturation voltage VCE(sat) IC=100 mA, IB= 10mA V 0.25 Base-emitter saturation voltage V (sat) I =100 mA, I = 10mA 1 V BE C B VCE=10V,

1.17. c1815.pdf Size:291K _wietron

C1815
C1815
C1815 NPN Plastic-Encapsulate Transistors P b Lead(Pb)-Free TO—92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS* TA=25? unless otherwise noted 3.BASE Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage 1 2 3 VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Voltage IC Collector Current -Continuous 150 mA PD Total Device Dissipation 400 mW TJ, Tstg Junction and Storage Temperature -55-150 ? *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100 uA, IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO Ic= 0. 1 mA, IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE= 100 uA, IC=0 5 V Collector cut-off current ICBO VCB= 60 V , IE=0 0.1 uA Collector cut-off current ICEO VCE=

1.18. c1815.pdf Size:477K _willas

C1815
C1815
FM120-M WILLAS THRU 1 15 SOT-23 Plastic-Encap sulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Prod Package outline Features • Batch process design, excellent power dissipation offers better rev SOD-123H SOT-23 TRANSISTOR (NPN) lerse leakage current and thermal resistance. • Low profi e surface mounted application in order to optimize bo FEATURES • Low power lard space. 0.146(3.7) oss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. Power dissipation • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. 1. BASE 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) 2. EMITTER Pb-Free package is available • Silicon epitaxial planar chip, metal silicon junction. 3. COLLECTOR • Lead-free parts meet environmental standards of RoHS product for packing code suffix ”G” MIL-STD-19500 /228 MARKING : HF

1.19. hsc1815.pdf Size:46K _hsmc

C1815
C1815
Spec. No. : HE6523 HI-SINCERITY Issued Date : 1992.11.25 Revised Date : 2006.07.28 MICROELECTRONICS CORP. Page No. : 1/4 HSC1815 NPN Epitaxial Planar Transistor Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature.............................................................................................................................................. -55 ~ +150 °C Junction Temperature..................................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) .................................................................................................................................. 400 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ...............................

See also transistors datasheet: 3DK2222A , A1015 , A42 , A44 , A733 , A92 , A94 , B772 , 2N4403 , C945 , CJF715 , D882 , HM4033 , HM879 , KTA1668 , KTA2014 , KTD1898 .

Keywords

 C1815 Datasheet  C1815 Datenblatt  C1815 RoHS  C1815 Distributor
 C1815 Application Notes  C1815 Component  C1815 Circuit  C1815 Schematic
 C1815 Equivalent  C1815 Cross Reference  C1815 Data Sheet  C1815 Fiche Technique

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