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S8550
  S8550
  S8550
 
S8550
  S8550
  S8550
 
S8550
  S8550
 
 
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100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU508DXI
BU508FI .. BUL6822
BUL6822A .. BUV39
BUV40 .. BUX80/6
BUX80/7 .. C9080
C9081 .. CEN-U45
CEN-U51 .. CJD3055
CJD31C .. CMPT918
CMPT930 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM7
D44VM8 .. DKS21
DKS22 .. DTA123EUA
DTA123J .. DTC143XE
DTC143XEA .. DZT491
DZT5401 .. ECG351
ECG352 .. ESM117
ESM118 .. FB3727
FB3728 .. FJV3113R
FJV3114R .. FMMT4964
FMMT497 .. FT400B
FT401 .. GC112
GC115 .. GES4400
GES4401 .. GI2715
GI2716 .. GT309D
GT309E .. HA7540
HA7541 .. HN1C01F
HN1C01FE .. HUN5236
HUN5237 .. JC559A
JC559C .. KF630D
KF630S .. KRA729U
KRA730E .. KRC662U
KRC663F .. KSA643
KSA643-G .. KSC2682-Y
KSC2688 .. KSD2012
KSD2012-G .. KSR2102
KSR2103 .. KT315E-1
KT315E1 .. KT610A
KT610B .. KT8127A
KT8127A-1 .. KT852G
KT852V .. KTA1703
KTA1704 .. KTC813U
KTC814U .. MA287
MA393 .. MH0812
MH0813 .. MJ8503
MJ8504 .. MJE41
MJE41A .. MM4033
MM4036 .. MMBT4403WT1
MMBT4888 .. MMUN2134LT1
MMUN2134LT2 .. MP3905R
MP3906 .. MPQ5447
MPQ5449 .. MPS834
MPS835 .. MRF427
MRF428 .. MZT127
MZT2955 .. NB011FJ
NB011FK .. NB123F
NB123FH .. NB323H
NB323K .. NPS3721
NPS3725 .. NSS40300
NSS40300DD .. OC466K
OC467 .. PBSS306NX
PBSS306NZ .. PEMB30
PEMB4 .. PN4250A
PN4257 .. PZTA14
PZTA27 .. RN1307
RN1308 .. RN2401
RN2402 .. RT484
RT497M .. SD3866AF
SD3960F .. SGS130
SGS131 .. SRA2202EF
SRA2202M .. STA3360PI
STA723D .. SUT161G
SUT290 .. TA1703B
TA1704 .. TI804
TI805 .. TIPL13004
TIPL13005 .. TN3398
TN3402 .. TP4258
TP4258A .. UMG1N
UMG2N .. UN6214
UN6215Q .. ZT1486A
ZT1487 .. ZTX342L
ZTX342M .. ZXTN25100DZ
ZXTN26020DMF .. ZXTPS720MC
 
S8550 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

S8550 Transistor Datasheet. Parameters and Characteristics.

Type Designator: S8550

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of S8550 transistor: SOT23

S8550 Equivalent Transistors - Cross-Reference Search

S8550 PDF doc:

1.1. ss8550.pdf Size:347K _fairchild_semi

S8550
S8550
SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8050 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25C) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100A, IE=0 -40 V BVCEO Collector-Emitter Breakdown Voltage IC= -2mA, IB=0 -25 V BVEBO Emitter-Base Breakdown Voltage IE= -100A, IC=0 -6 V ICBO Collector Cut-off Current VCB= -35V, IE=0 -100 nA IEBO Emitter Cut-off Current VEB= -6V, IC=0 -100

1.2. ss8550.pdf Size:64K _samsung

S8550
S8550
SS8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. Complimentary to SS8050 Collector Current IC= -1.5A Collector Dissipation:PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1.5 A Collector Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC= -100 , IE=0 -40 V Collector-Emitter Breakdown Voltage BVCEO IC= -2mA, IB=0 -25 V Emitter-Base Breakdown Voltage BVEBO IE= -100 , IC=0 V -6 Collector Cut-off Current ICBO VCB= -35V, IE=0 -100 nA Emitter Cut-off Current IEBO VEB= -6V, IC=0 -100 nA DC Current Gain hFE1 VCE= -1V, IC= -5mA 45 170 hF

1.3. s8550.pdf Size:138K _utc

S8550
S8550
UNISONIC TECHNOLOGIES CO., LTD S8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR ? DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP 1 transistor, designed for Class B push-pull audio amplifier and TO-92 general purpose applications. ? FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to UTC S8050 ? ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 S8550L-x-T92-B S8550G-x-T92-B TO-92 E B C Tape Box S8550L-x-T92-K S8550G-x-T92-K TO-92 E B C Bulk www.unisonic.com.tw 1 of 4 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R201-013. D S8550 PNP SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 mA C

1.4. sts8550.pdf Size:96K _auk

S8550
S8550
STS8550 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • High current application • Radio in class B push-pull operation Feature • Complementary pair with STS8050 Ordering Information Type NO. Marking Package Code STS8550 STS8550 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector KST-9013-000 1 4.5 ± 0.1 14.0 ± 0.40 0.38 1.20 ± 0.1 STS8550 Absolute maximum ratings (Ta=25° °C) ° ° Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -30 V Collector-Emitter voltage VCEO -25 V Emitter-Base voltage VEBO -6 V Collector current IC -800 mA Emitter current IE 800 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25° °C) ° ° Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base break

1.5. sps8550.pdf Size:187K _auk

S8550
S8550
SPS8550 Semiconductor Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with SPS8050 Ordering Information Type NO. Marking Package Code SPS8550 SPS8550 TO-92 Outline Dimensions unit : mm 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector KST-9105-002 1 SPS8550 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -15 V Collector-Emitter voltage VCEO -12 V Emitter-Base voltage VEBO -6.5 V Collector current IC -1.5 A Collector dissipation PC 625 mW Junction temperature TJ 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -15 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -12 - - V Emitter-Base breakdown vo

1.6. ss8550w.pdf Size:115K _secos

S8550
S8550
SS8550W PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM : 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM : -1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO : - 40 V S Top View B K 0.350 0.500 Operating & storage junction temperature 1 2 L 0.590 0.720 O O Tj, Tstg : - 55 C ~ + 150 C S 2.000 2.400 V G V 0.280 0.420 Marking : Y2 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V -40 V (BR)CBO Ic= 100?A, I =0 E Collector-emitter breakdown voltage V Ic=-0.1mA, I =0 -25 V (BR)CEO B Emitter-base breakdown voltage V -5 V (BR)EBO I =-100?A,I =0 E C Collector cut-off current I V =-40 V , I =0 -0.1 CBO CB E ?A

1.7. ss8550.pdf Size:329K _secos

S8550
S8550
SS8550 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector 3 FEATURES SOT-23 Power dissipation Collector 3 1 Dim Min Max PCM : 0.3 W Base A 2.800 3.040 1 Base B 1.200 1.400 2 Collector Current Emitter C 0.890 1.110 2 ICM : - 1.5 A D 0.370 0.500 Emitter G 1.780 2.040 Collector-base voltage A H 0.013 0.100 L V(BR)CBO : - 40 V J J 0.085 0.177 K 3 K 0.450 0.600 Top View S B Operating & storage junction temperature 1 2 L 0.890 1.020 C S 2.100 2.500 TJ, TSTG : - 55°C ~ + 150°C V G H D V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS at Ta = 25°C Symbol Min. Typ. Max. Unit Test Conditions BVCBO -40 - - V Ic = 100?A, IE = 0 BVCEO -25 - - V Ic = -0.1mA, IB = 0 BVEBO -5 - - V IE = -100?A, IC = 0 ICBO - - -0.1 ?A VCB = -40 V, IE = 0 ICEO - - -0.1 ?A VCE = -20V, IB = 0 IEBO - - -0.1 ?A VEB = -5V, IC = 0 VCE(sa

1.8. s8550.pdf Size:196K _secos

S8550
S8550
S8550 PNP Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Dim Min Max Collector 3 A 2.800 3.040 Complimentary to S8050 B 1.200 1.400 1 Base C 0.890 1.110 2 Emitter Collector Current: IC=0.5A D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J 0.085 0.177 3 K 0.450 0.600 S Top View B 12 L 0.890 1.020 S 2.100 2.500 MARKING: 2TY V G V 0.450 0.600 All Dimension in mm C H J D K O MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdow

1.9. ss8550t.pdf Size:105K _secos

S8550
S8550
SS8550T PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM : 1 W Collector Current ICM : -1.5 A 1 Collector-base voltage 2 3 V(BR)CBO : - 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg : - 55 C ~ + 150 C 1. EMITTER 2 2. BASS 3 . COLLECTOR 3 O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V -40 V (BR)CBO Ic= -100?A, I =0 E Collector-emitter breakdown voltage V Ic= -25 V (BR)CEO -0.1mA, I =0 B Emitter-base breakdown voltage V -5 V (BR)EBO I =-100?A, I =0 E C Collector cut-off current I V =-40 V , I =0 -0.1 CBO CB E ?A Collector cut-off current I V =-20V , I =0 -0.1 CEO CE B ?A Emitter cut-off current I V =-5V, I =0 -0.1 EBO EB C ?A H V =-1V, I = 400 FE(1) CE C -100mA 85 DC current gain H V =-1V, I =

1.10. s8550t.pdf Size:343K _secos

S8550
S8550
S8550T PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 4.55 0.2 3.5 0.2 (1.27 Typ.) FEATURES 1.25 0.2 1 2 3 Excellent hFE linearity 2.54 0.1 1: Emitter 2: Base 3: Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -25 V Emitter to Base Voltage VEBO -5 V mA Collector Currrent IC -500 Total Power Dissipation PD 625 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base Breakdown Voltage V(BR)CBO -40 - - V IC = -100 ?A, IE = 0 Collector-emitter Breakdown Voltage V(BR)CEO -25 - - V IC = -1 mA, IB = 0 Emitter-base Breakdown Voltage V(BR)EBO -5 - - V IE = -100 ?A, IC = 0 Collector Cu

1.11. mps8550s.pdf Size:390K _kec

S8550
S8550
SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to MPS8050S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 MAXIMUM RATING (Ta=25 ) G 1.90 H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 ~ 0.10 L 0.55 VCBO -40 V Collector-Base Voltage P P M 0.20 MIN N 1.00+0.20/-0.10 VCEO -25 V Collector-Emitter Voltage P 7 VEBO Emitter-Base Voltage -6 V M IC Collector Current -1.5 A 1. EMITTER PC * Collector Power Dissipation 350 mW 2. BASE Tj Junction Temperature 150 3. COLLECTOR Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) SOT-23 Marking hFE Rank Lot No. Type Name BJ ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-35V, IE=0 Collector Cut-off Current - - -100 nA IEBO VEB=-6V, IC=0 Emitter Cut-off

1.12. mps8550.pdf Size:45K _kec

S8550
S8550
SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to MPS8050. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25?) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO -40 V Collector-Base Voltage G 0.85 H 0.45 VCEO -25 V Collector-Emitter Voltage _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage -6 V L 2.30 M 0.45 MAX IC Collector Current -1.5 A N 1.00 1 2 3 625 1. EMITTER PC* Collector Power Dissipation mW 2. BASE 400 3. COLLECTOR Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range TO-92 *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-35V, IE=0 Collector Cut-off Current - - -100 nA IEBO VEB=-6V, IC=0 Emitter Cut-off Current - - -100 nA V(BR)CBO A, IE=0 Collector-Base Breakdown Voltage IC=-10

1.13. ss8550b.pdf Size:797K _htsemi

S8550
S8550
SS8 550 TRANSISTOR(PNP) SOT-323 FEA TURES Complimentary to SS8050 1. Base MARKING: Y2 2. Emitter 3. Collector MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 ?A hFE(1) VCE=-1V, IC=-100mA 120 400 DC current gain hFE(2)

1.14. s8550.pdf Size:978K _htsemi

S8550
S8550
S8 550 S901 2 SOT-23 TRANSISTOR(PNP) FEATURES Complimentary to S8050 1. BASE Collector current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING : 2TY MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC = -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -100?A, IC=0 Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 ?A hFE(1) V

1.15. ss8550.pdf Size:292K _gsme

S8550
S8550
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage lf Small Motor ????? Complementary to GM8050 ? GM8050 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage -40 VCBO Vdc ???-???? -25(GMA6801) Collect-Emitter Voltage -25 VCEO Vdc ???-????? -18(GMA6801) Emitter-Base Voltage VEBO -5.0 Vdc ???-???? -500(S8550A,S8550) -1000(M8550) Collector Current -1200(MMT8550) Ic mAdc ????? -1500(SS8550) -1800(GMA6801) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. MMT8550=Y2 SS8550=Y.

1.16. s8550.pdf Size:292K _gsme

S8550
S8550
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage lf Small Motor ????? Complementary to GM8050 ? GM8050 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage -40 VCBO Vdc ???-???? -25(GMA6801) Collect-Emitter Voltage -25 VCEO Vdc ???-????? -18(GMA6801) Emitter-Base Voltage VEBO -5.0 Vdc ???-???? -500(S8550A,S8550) -1000(M8550) Collector Current -1200(MMT8550) Ic mAdc ????? -1500(SS8550) -1800(GMA6801) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. MMT8550=Y2 SS8550=Y.

1.17. s8550a.pdf Size:292K _gsme

S8550
S8550
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage lf Small Motor ????? Complementary to GM8050 ? GM8050 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage -40 VCBO Vdc ???-???? -25(GMA6801) Collect-Emitter Voltage -25 VCEO Vdc ???-????? -18(GMA6801) Emitter-Base Voltage VEBO -5.0 Vdc ???-???? -500(S8550A,S8550) -1000(M8550) Collector Current -1200(MMT8550) Ic mAdc ????? -1500(SS8550) -1800(GMA6801) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. MMT8550=Y2 SS8550=Y.

1.18. ss8550_sot-23.pdf Size:242K _lge

S8550
S8550
SS8550 SOT-23 Transistor(PNP) SOT-23 1. Base 2.Emitter 3.Collector Features Complimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 ?A hFE(1) VCE=-1V, IC

1.19. s8550_to-92.pdf Size:180K _lge

S8550
S8550
S8550(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Excellent hFE linearity MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units -40 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA Dimensions in inches and (millimeters) PC Collector Dissipation 625 mW TJ Junction Temperature 150 ? Tstg Junction and Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC= -100uA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100uA, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 uA Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 uA Emitter cut-off current IEBO VEB= - 3V, IC=0 -0.1 uA hFE

1.20. s8550_sot-23.pdf Size:217K _lge

S8550
S8550
S8550 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8050 Collector current: IC=0.5A MARKING : 2TY Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC = -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -100?A, IC=0 Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 ?A Emitter cut-off current IE

1.21. ss8550_to-92.pdf Size:177K _lge

S8550
S8550
SS8550(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PC : 1 W (TA=25?) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current-Continuous -1.5 A Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Emitter cut-off current ICEO VCE=-20V, IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 uA hFE(1) VCE=-1V, IC=-100mA 85 400 DC cur

1.22. ss8550w.pdf Size:264K _wietron

S8550
S8550
SS8550W PNP Plastic-Encapsulate Transistor 3 P b Lead(Pb)-Free 1 2 MAXIMUM RATINGS (TA=25? unless otherwise noted) 1. BASE Symbol Parameter Value Units 2. EMITTER 3. COLLECTOR V(BR)CBO Collector- Base Voltage -40 V ICM Collector Current -1.5 A SOT-323(SC-70) . PCM Power Dissipation (Tamb=25°C) W 0.2 TJ Junction Temperature -55 to +150 ? Tstg Storage Temperature -55 to +150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Sy mbol Test conditions MIN MAX UNIT -40 V Collector-base breakdown voltage V(BR)CBO Ic= -100 ?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -100 ?A, IC=0 Collector cut-off current ICBO VCB= -40 V , IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20 V , IB=0 -0.1 ?A , Emitter cut-off current IEBO VEB= -5V IC=0 -0.1 ?A hFE (1) VCE= -1V, IC= -100mA 120 350 DC current gain hFE (2) VCE= -1V, IC= -800mA 40 Collector-emitter s

1.23. ss8550.pdf Size:166K _wietron

S8550
S8550
SS8550 Plastic-Encapsulate Transistors TO-92 PNP Silicon COLLECTOR 3 2 BASE 1 1. EMITTER 2 3 1 2. BASE EMITTER 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol SS8550 Unit Collector-Emitter Voltage V CEO -25 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -1.5 Adc Total Device Dissipation T =25 C PD W A 1.0 Junction Temperature T 150 j C -55 to +150 Storage Temperature Tstg C DEVICE MARKING SS8550=SS8550D ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (1) (IC= -0.1 mAdc, IB=0) V(BR)CEO -25 Vdc - V(BR)CBO -40 Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) Vdc - Vdc V(BR)EBO -5.0 Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) - -0.1 ICBO uAdc Collector Cutoff Current (V = -40 Vdc, IE=0 Vdc) CB - IEBO Emitter Cutoff Current(VEB = -5 Vdc, IC =0 Vdc) uAdc -0.1 < <2.0% 1. Pulse Test: Pulse Width 300 us, Duty C

1.24. s8550.pdf Size:1656K _wietron

S8550
S8550
S8550 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. E MIT T E R 1 2 2. B A SE 3 3. COL L E CTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-E m itter Voltage V CE O -2 5 Vdc Collector-B as e Voltage VCB O -4 0 Vdc E m itter-B as e VOltage VE B O -5 . 0 Vdc Collector Current IC -5 0 0 mAdc P 0 . 6 2 5 Total Device Dis s ipation T =2 5 C W A D Junction Tem perature T 1 5 0 j C S torage, Tem perature Ts tg C -5 5 to +1 5 0 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-E mitter B reakdown Voltage (IC= -0 . 1 mAdc, IB =0 ) V(B R )CE O -2 5 Vdc - Collector-B as e B reakdown Voltage (IC= -1 0 0 µAdc, IE =0 ) V(B R )CB O -4 0 Vdc - Vdc V(B R )E B O -5 . 0 E m itter-B as e B reakdown Voltage (IE = -1 0 0 µAdc, IC=0 ) uAdc ICE 0 Collector Cutoff Current (V = -2 0 Vdc, I =0 ) - -0 . 2 CE B - ICB O uAdc -0 . 1 Collector Cutoff Current (V = -4 0 Vdc, IE =0 ) CB - IE B O E m itte

1.25. ss8550lt1.pdf Size:165K _wietron

S8550
S8550
SS8550LT1 PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 Value VCEO -25 -40 -5.0 -1500 300 2.4 417 -0.1 -25 -40 -100 -5.0 -100 -0.15 u -40 -0.15 u -5.0 WEITRON 27-Jul-2012 1/2 http://www.weitron.com.tw SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - (IC=-100 mAdc, VCE=1.0 Vdc) hFE 600 100 Collector-Emitter Saturation Voltage VCE(sat) - Vdc -0.5 (IC=-800 mAdc, IB=-80mAdc) CLASSIFICATION OF h FE P Rank Q R S Range 100-200 150-300 200-400 300-600 Marking 1HB 1HD 1HF 1HH SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 D G G 1.70 2.10 E H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L 0.30 0.61 L M J M 0.076 0.25 WEITRON 27-Jul-2012 2/2 http://www.weitron.com.tw

See also transistors datasheet: MMBT589 , MMBTA44 , MMBTA94 , PXT3904 , PXT3906 , PXT8050 , PXT8550 , S8050 , S9014 , S9012 , S9013 , S9013W , S9014 , S9014W , S9015 , S9015W , S9018 .

Keywords

 S8550 Datasheet  S8550 Datenblatt  S8550 RoHS  S8550 Distributor
 S8550 Application Notes  S8550 Component  S8550 Circuit  S8550 Schematic
 S8550 Equivalent  S8550 Cross Reference  S8550 Data Sheet  S8550 Fiche Technique

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