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S8550
  S8550
  S8550
 
S8550
  S8550
  S8550
 
S8550
  S8550
 
 
List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
S8550 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

S8550 Transistor Datasheet. Parameters and Characteristics.

Type Designator: S8550

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 25

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of S8550 transistor: SOT23

S8550 Equivalent Transistors - Cross-Reference Search

S8550 PDF doc:

1.1. ss8550.pdf Size:347K _fairchild_semi

S8550
S8550
SS8550 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8050 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25C) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -6 V IC Collector Current -1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 C TSTG Storage Temperature -65 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100A, IE=0 -40 V BVCEO Collector-Emitter Breakdown Voltage IC= -2mA, IB=0 -25 V BVEBO Emitter-Base Breakdown Voltage IE= -100A, IC=0 -6 V ICBO Collector Cut-off Current VCB= -35V, IE=0 -100 nA IEBO Emitter Cut-off Current VEB= -6V, IC=0 -100

1.2. ss8550.pdf Size:64K _samsung

S8550
S8550
SS8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. Complimentary to SS8050 Collector Current IC= -1.5A Collector Dissipation:PC=2W (TC=25 ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V Collector Current IC -1.5 A Collector Dissipation PC 1 W Junction Temperature TJ 150 Storage Temperature TSTG -65 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC= -100 , IE=0 -40 V Collector-Emitter Breakdown Voltage BVCEO IC= -2mA, IB=0 -25 V Emitter-Base Breakdown Voltage BVEBO IE= -100 , IC=0 V -6 Collector Cut-off Current ICBO VCB= -35V, IE=0 -100 nA Emitter Cut-off Current IEBO VEB= -6V, IC=0 -100 nA DC Current Gain hFE1 VCE= -1V, IC= -5mA 45 170 hF

1.3. s8550.pdf Size:138K _utc

S8550
S8550
UNISONIC TECHNOLOGIES CO., LTD S8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR ? DESCRIPTION The UTC S8550 is a low voltage high current small signal PNP 1 transistor, designed for Class B push-pull audio amplifier and TO-92 general purpose applications. ? FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V * Complementary to UTC S8050 ? ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Plating Halogen Free 1 2 3 S8550L-x-T92-B S8550G-x-T92-B TO-92 E B C Tape Box S8550L-x-T92-K S8550G-x-T92-K TO-92 E B C Bulk www.unisonic.com.tw 1 of 4 Copyright © 2013 Unisonic Technologies Co., Ltd QW-R201-013. D S8550 PNP SILICON TRANSISTOR ? ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified.) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V Emitter-Base Voltage VEBO -5 V Collector Current IC -700 mA C

1.4. sps8550.pdf Size:187K _auk

S8550
S8550
SPS8550 Semiconductor Semiconductor PNP Silicon Transistor Features • Suitable for low voltage large current drivers • High DC current gain and large current capability • Complementary pair with SPS8050 Ordering Information Type NO. Marking Package Code SPS8550 SPS8550 TO-92 Outline Dimensions unit : mm 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector KST-9105-002 1 SPS8550 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -15 V Collector-Emitter voltage VCEO -12 V Emitter-Base voltage VEBO -6.5 V Collector current IC -1.5 A Collector dissipation PC 625 mW Junction temperature TJ 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -15 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -12 - - V Emitter-Base breakdown vo

1.5. sts8550.pdf Size:96K _auk

S8550
S8550
STS8550 Semiconductor Semiconductor PNP Silicon Transistor Descriptions • High current application • Radio in class B push-pull operation Feature • Complementary pair with STS8050 Ordering Information Type NO. Marking Package Code STS8550 STS8550 TO-92 Outline Dimensions unit : mm 3.45±0.1 4.5±0.1 2.25±0.1 0.4±0.02 2.06±0.1 1.27 Typ. 2.54 Typ. 1 2 3 PIN Connections 1. Emitter 2. Base 3. Collector KST-9013-000 1 4.5 ± 0.1 14.0 ± 0.40 0.38 1.20 ± 0.1 STS8550 Absolute maximum ratings (Ta=25° °C) ° ° Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -30 V Collector-Emitter voltage VCEO -25 V Emitter-Base voltage VEBO -6 V Collector current IC -800 mA Emitter current IE 800 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25° °C) ° ° Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base break

1.6. ss8550w.pdf Size:115K _secos

S8550
S8550
SS8550W PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product SOT-323 FEATURES Collector Dim Min Max 3 3 A 1.800 2.200 Power dissipation 1 1 B 1.150 1.350 2 Base PCM : 0.2 W C 0.800 1.000 Collector Current D 0.300 0.400 2 ICM : -1.5 A A G 1.200 1.400 Emitter L H 0.000 0.100 Collector-base voltage J 0.100 0.250 3 V(BR)CBO : - 40 V S Top View B K 0.350 0.500 Operating & storage junction temperature 1 2 L 0.590 0.720 O O Tj, Tstg : - 55 C ~ + 150 C S 2.000 2.400 V G V 0.280 0.420 Marking : Y2 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V -40 V (BR)CBO Ic= 100?A, I =0 E Collector-emitter breakdown voltage V Ic=-0.1mA, I =0 -25 V (BR)CEO B Emitter-base breakdown voltage V -5 V (BR)EBO I =-100?A,I =0 E C Collector cut-off current I V =-40 V , I =0 -0.1 CBO CB E ?A

1.7. s8550.pdf Size:196K _secos

S8550
S8550
S8550 PNP Silicon Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free FEATURES SOT-23 Dim Min Max Collector 3 A 2.800 3.040 Complimentary to S8050 B 1.200 1.400 1 Base C 0.890 1.110 2 Emitter Collector Current: IC=0.5A D 0.370 0.500 G 1.780 2.040 A H 0.013 0.100 L J 0.085 0.177 3 K 0.450 0.600 S Top View B 12 L 0.890 1.020 S 2.100 2.500 MARKING: 2TY V G V 0.450 0.600 All Dimension in mm C H J D K O MAXIMUM RATINGS (TA=25 C unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdow

1.8. ss8550t.pdf Size:105K _secos

S8550
S8550
SS8550T PNP Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES Power dissipation PCM : 1 W Collector Current ICM : -1.5 A 1 Collector-base voltage 2 3 V(BR)CBO : - 40 V 1 2 3 Operating & storage junction temperature 1 O O Tj, Tstg : - 55 C ~ + 150 C 1. EMITTER 2 2. BASS 3 . COLLECTOR 3 O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V -40 V (BR)CBO Ic= -100?A, I =0 E Collector-emitter breakdown voltage V Ic= -25 V (BR)CEO -0.1mA, I =0 B Emitter-base breakdown voltage V -5 V (BR)EBO I =-100?A, I =0 E C Collector cut-off current I V =-40 V , I =0 -0.1 CBO CB E ?A Collector cut-off current I V =-20V , I =0 -0.1 CEO CE B ?A Emitter cut-off current I V =-5V, I =0 -0.1 EBO EB C ?A H V =-1V, I = 400 FE(1) CE C -100mA 85 DC current gain H V =-1V, I =

1.9. s8550t.pdf Size:343K _secos

S8550
S8550
S8550T PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free TO-92 4.55 0.2 3.5 0.2 (1.27 Typ.) FEATURES 1.25 0.2 1 2 3 Excellent hFE linearity 2.54 0.1 1: Emitter 2: Base 3: Collector 0.08 0.43 0.07 0.46 0.1 ABSOLUTE MAXIMUM RATINGS at Ta = 25°C Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -25 V Emitter to Base Voltage VEBO -5 V mA Collector Currrent IC -500 Total Power Dissipation PD 625 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? ELECTRICAL CHARACTERISTICS (TAMB = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector-base Breakdown Voltage V(BR)CBO -40 - - V IC = -100 ?A, IE = 0 Collector-emitter Breakdown Voltage V(BR)CEO -25 - - V IC = -1 mA, IB = 0 Emitter-base Breakdown Voltage V(BR)EBO -5 - - V IE = -100 ?A, IC = 0 Collector Cu

1.10. ss8550.pdf Size:329K _secos

S8550
S8550
SS8550 PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free Collector 3 FEATURES SOT-23 Power dissipation Collector 3 1 Dim Min Max PCM : 0.3 W Base A 2.800 3.040 1 Base B 1.200 1.400 2 Collector Current Emitter C 0.890 1.110 2 ICM : - 1.5 A D 0.370 0.500 Emitter G 1.780 2.040 Collector-base voltage A H 0.013 0.100 L V(BR)CBO : - 40 V J J 0.085 0.177 K 3 K 0.450 0.600 Top View S B Operating & storage junction temperature 1 2 L 0.890 1.020 C S 2.100 2.500 TJ, TSTG : - 55°C ~ + 150°C V G H D V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS at Ta = 25°C Symbol Min. Typ. Max. Unit Test Conditions BVCBO -40 - - V Ic = 100?A, IE = 0 BVCEO -25 - - V Ic = -0.1mA, IB = 0 BVEBO -5 - - V IE = -100?A, IC = 0 ICBO - - -0.1 ?A VCB = -40 V, IE = 0 ICEO - - -0.1 ?A VCE = -20V, IB = 0 IEBO - - -0.1 ?A VEB = -5V, IC = 0 VCE(sa

1.11. mps8550.pdf Size:45K _kec

S8550
S8550
SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE ·Complementary to MPS8050. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25?) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO -40 V Collector-Base Voltage G 0.85 H 0.45 VCEO -25 V Collector-Emitter Voltage _ H J 14.00 + 0.50 K 0.55 MAX F F VEBO Emitter-Base Voltage -6 V L 2.30 M 0.45 MAX IC Collector Current -1.5 A N 1.00 1 2 3 625 1. EMITTER PC* Collector Power Dissipation mW 2. BASE 400 3. COLLECTOR Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range TO-92 *Cu Lead-Frame : 625mW Fe Lead-Frame : 400mW ELECTRICAL CHARACTERISTICS (Ta=25?) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-35V, IE=0 Collector Cut-off Current - - -100 nA IEBO VEB=-6V, IC=0 Emitter Cut-off Current - - -100 nA V(BR)CBO A, IE=0 Collector-Base Breakdown Voltage IC=-10

1.12. mps8550s.pdf Size:390K _kec

S8550
S8550
SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to MPS8050S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 MAXIMUM RATING (Ta=25 ) G 1.90 H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 ~ 0.10 L 0.55 VCBO -40 V Collector-Base Voltage P P M 0.20 MIN N 1.00+0.20/-0.10 VCEO -25 V Collector-Emitter Voltage P 7 VEBO Emitter-Base Voltage -6 V M IC Collector Current -1.5 A 1. EMITTER PC * Collector Power Dissipation 350 mW 2. BASE Tj Junction Temperature 150 3. COLLECTOR Tstg -55 150 Storage Temperature Range * PC : Package Mounted On 99.5% Alumina (10 8 0.6 ) SOT-23 Marking hFE Rank Lot No. Type Name BJ ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT ICBO VCB=-35V, IE=0 Collector Cut-off Current - - -100 nA IEBO VEB=-6V, IC=0 Emitter Cut-off

1.13. s8550.pdf Size:978K _htsemi

S8550
S8550
S8 550 S901 2 SOT-23 TRANSISTOR(PNP) FEATURES Complimentary to S8050 1. BASE Collector current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING : 2TY MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC = -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -100?A, IC=0 Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB= -3V, IC=0 -0.1 ?A hFE(1) V

1.14. ss8550b.pdf Size:797K _htsemi

S8550
S8550
SS8 550 TRANSISTOR(PNP) SOT-323 FEA TURES Complimentary to SS8050 1. Base MARKING: Y2 2. Emitter 3. Collector MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 ?A hFE(1) VCE=-1V, IC=-100mA 120 400 DC current gain hFE(2)

1.15. s8550a.pdf Size:292K _gsme

S8550
S8550
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage lf Small Motor ????? Complementary to GM8050 ? GM8050 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage -40 VCBO Vdc ???-???? -25(GMA6801) Collect-Emitter Voltage -25 VCEO Vdc ???-????? -18(GMA6801) Emitter-Base Voltage VEBO -5.0 Vdc ???-???? -500(S8550A,S8550) -1000(M8550) Collector Current -1200(MMT8550) Ic mAdc ????? -1500(SS8550) -1800(GMA6801) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. MMT8550=Y2 SS8550=Y.

1.16. s8550.pdf Size:292K _gsme

S8550
S8550
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage lf Small Motor ????? Complementary to GM8050 ? GM8050 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage -40 VCBO Vdc ???-???? -25(GMA6801) Collect-Emitter Voltage -25 VCEO Vdc ???-????? -18(GMA6801) Emitter-Base Voltage VEBO -5.0 Vdc ???-???? -500(S8550A,S8550) -1000(M8550) Collector Current -1200(MMT8550) Ic mAdc ????? -1500(SS8550) -1800(GMA6801) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. MMT8550=Y2 SS8550=Y.

1.17. ss8550.pdf Size:292K _gsme

S8550
S8550
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM8550 FEATURES ¦FEATURES ?? FEATURES Low Frequency Power Amplifier ?????? Suitable for Driver Stage lf Small Motor ????? Complementary to GM8050 ? GM8050 ?? (Ta=25 ) ¦?????(Ta=25?) (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage -40 VCBO Vdc ???-???? -25(GMA6801) Collect-Emitter Voltage -25 VCEO Vdc ???-????? -18(GMA6801) Emitter-Base Voltage VEBO -5.0 Vdc ???-???? -500(S8550A,S8550) -1000(M8550) Collector Current -1200(MMT8550) Ic mAdc ????? -1500(SS8550) -1800(GMA6801) Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. S8550A=2TY. S8550=2TY M8550=Y2. MMT8550=Y2 SS8550=Y.

1.18. s8550_to-92.pdf Size:180K _lge

S8550
S8550
S8550(PNP) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Excellent hFE linearity MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units -40 V VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA Dimensions in inches and (millimeters) PC Collector Dissipation 625 mW TJ Junction Temperature 150 ? Tstg Junction and Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC= -100uA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= -1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE= -100uA, IC=0 -5 V Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 uA Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 uA Emitter cut-off current IEBO VEB= - 3V, IC=0 -0.1 uA hFE

1.19. ss8550_sot-23.pdf Size:242K _lge

S8550
S8550
SS8550 SOT-23 Transistor(PNP) SOT-23 1. Base 2.Emitter 3.Collector Features Complimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE=-20V, IB=0 -0.1 ?A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 ?A hFE(1) VCE=-1V, IC

1.20. s8550_sot-23.pdf Size:217K _lge

S8550
S8550
S8550 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8050 Collector current: IC=0.5A MARKING : 2TY Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO -40 V IC = -100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC =-1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -100?A, IC=0 Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 ?A Emitter cut-off current IE

1.21. ss8550_to-92.pdf Size:177K _lge

S8550
S8550
SS8550(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PC : 1 W (TA=25?) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V Dimensions in inches and (millimeters) IC Collector Current-Continuous -1.5 A Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100uA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A, IC=0 -5 V Collector cut-off current ICBO VCB=-40V, IE=0 -0.1 ?A Emitter cut-off current ICEO VCE=-20V, IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-5V, IC=0 -0.1 uA hFE(1) VCE=-1V, IC=-100mA 85 400 DC cur

1.22. ss8550lt1.pdf Size:165K _wietron

S8550
S8550
SS8550LT1 PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 Value VCEO -25 -40 -5.0 -1500 300 2.4 417 -0.1 -25 -40 -100 -5.0 -100 -0.15 u -40 -0.15 u -5.0 WEITRON 27-Jul-2012 1/2 http://www.weitron.com.tw SS8550LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - (IC=-100 mAdc, VCE=1.0 Vdc) hFE 600 100 Collector-Emitter Saturation Voltage VCE(sat) - Vdc -0.5 (IC=-800 mAdc, IB=-80mAdc) CLASSIFICATION OF h FE P Rank Q R S Range 100-200 150-300 200-400 300-600 Marking 1HB 1HD 1HF 1HH SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 E 0.46 1.00 D G G 1.70 2.10 E H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L 0.30 0.61 L M J M 0.076 0.25 WEITRON 27-Jul-2012 2/2 http://www.weitron.com.tw

1.23. ss8550w.pdf Size:264K _wietron

S8550
S8550
SS8550W PNP Plastic-Encapsulate Transistor 3 P b Lead(Pb)-Free 1 2 MAXIMUM RATINGS (TA=25? unless otherwise noted) 1. BASE Symbol Parameter Value Units 2. EMITTER 3. COLLECTOR V(BR)CBO Collector- Base Voltage -40 V ICM Collector Current -1.5 A SOT-323(SC-70) . PCM Power Dissipation (Tamb=25°C) W 0.2 TJ Junction Temperature -55 to +150 ? Tstg Storage Temperature -55 to +150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Sy mbol Test conditions MIN MAX UNIT -40 V Collector-base breakdown voltage V(BR)CBO Ic= -100 ?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic= -0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO -5 V IE= -100 ?A, IC=0 Collector cut-off current ICBO VCB= -40 V , IE=0 -0.1 ?A Collector cut-off current ICEO VCE= -20 V , IB=0 -0.1 ?A , Emitter cut-off current IEBO VEB= -5V IC=0 -0.1 ?A hFE (1) VCE= -1V, IC= -100mA 120 350 DC current gain hFE (2) VCE= -1V, IC= -800mA 40 Collector-emitter s

1.24. s8550.pdf Size:1656K _wietron

S8550
S8550
S8550 PNP General Purpose Transistors TO-92 P b Lead(Pb)-Free 1. E MIT T E R 1 2 2. B A SE 3 3. COL L E CTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-E m itter Voltage V CE O -2 5 Vdc Collector-B as e Voltage VCB O -4 0 Vdc E m itter-B as e VOltage VE B O -5 . 0 Vdc Collector Current IC -5 0 0 mAdc P 0 . 6 2 5 Total Device Dis s ipation T =2 5 C W A D Junction Tem perature T 1 5 0 j C S torage, Tem perature Ts tg C -5 5 to +1 5 0 ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-E mitter B reakdown Voltage (IC= -0 . 1 mAdc, IB =0 ) V(B R )CE O -2 5 Vdc - Collector-B as e B reakdown Voltage (IC= -1 0 0 µAdc, IE =0 ) V(B R )CB O -4 0 Vdc - Vdc V(B R )E B O -5 . 0 E m itter-B as e B reakdown Voltage (IE = -1 0 0 µAdc, IC=0 ) uAdc ICE 0 Collector Cutoff Current (V = -2 0 Vdc, I =0 ) - -0 . 2 CE B - ICB O uAdc -0 . 1 Collector Cutoff Current (V = -4 0 Vdc, IE =0 ) CB - IE B O E m itte

1.25. ss8550.pdf Size:166K _wietron

S8550
S8550
SS8550 Plastic-Encapsulate Transistors TO-92 PNP Silicon COLLECTOR 3 2 BASE 1 1. EMITTER 2 3 1 2. BASE EMITTER 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol SS8550 Unit Collector-Emitter Voltage V CEO -25 Vdc Collector-Base Voltage VCBO -40 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC -1.5 Adc Total Device Dissipation T =25 C PD W A 1.0 Junction Temperature T 150 j C -55 to +150 Storage Temperature Tstg C DEVICE MARKING SS8550=SS8550D ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (1) (IC= -0.1 mAdc, IB=0) V(BR)CEO -25 Vdc - V(BR)CBO -40 Collector-Base Breakdown Voltage (IC= -100 uAdc, IE=0) Vdc - Vdc V(BR)EBO -5.0 Emitter-Base Breakdown Voltage (IE= -100 uAdc, IC=0) - -0.1 ICBO uAdc Collector Cutoff Current (V = -40 Vdc, IE=0 Vdc) CB - IEBO Emitter Cutoff Current(VEB = -5 Vdc, IC =0 Vdc) uAdc -0.1 < <2.0% 1. Pulse Test: Pulse Width 300 us, Duty C

1.26. s8550_to-92.pdf Size:266K _can-sheng

S8550
S8550
 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURES Excellent Hfe linearity MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base Voltage (集电极-基极电压) -40 V VCEO Collector-Emitter Voltage (集电极-发射极电压) -25 V VEBO Emitter-Base Voltage (发射极-基极电压) -5 V IC Collector Current -Continuous (集电极电流) -0.5 A PC Collector Power Dissipation (耗散功率) 0.625 W Tj Junction Temperature (结温) 150 ℃ Tstg Storage Temperature (储存温度) -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT (参数名称) (符号) (测试条件) (最小值) (典型值) (最

1.27. s8550_sot-23.pdf Size:274K _can-sheng

S8550
S8550
 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) FEATURES Complimentary to S8050 Collector current:Ic=0.5A MARKING:2TY MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base Voltage (集电极-基极电压) -40 V VCEO Collector-Emitter Voltage (集电极-发射极电压) -25 V VEBO Emitter-Base Voltage (发射极-基极电压) -5 V IC Collector Current -Continuous (集电极电流) -0.5 A PC Collector Power Dissipation (耗散功率) 0.3 W Tj Junction Temperature (结温) 150 ℃ Tstg Storage Temperature (储存温度) -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT (参数名称) (符号) (测试条件

1.28. ss8550_y2_sot-23.pdf Size:508K _can-sheng

S8550
S8550
 深圳市灿升实业发展有限公司 ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) FEATURES Complimentary to SS8050 MARKING: Y2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units (符号) (参数名称) (额定值) (单位) VCBO Collector-Base Voltage (集电极-基极电压) -40 V VCEO Collector-Emitter Voltage (集电极-发射极电压) -25 V VEBO Emitter-Base Voltage (发射极-基极电压) -5 V IC Collector Current -Continuous (集电极电流) -1.5 A PC Collector Power Dissipation (耗散功率) 0.625 W Tj Junction Temperature (结温) 150 ℃ Tstg Storage Temperature (储存温度) -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT (参数名称) (符号) (测试条件) (最小值) (典

1.29. ss8550.pdf Size:284K _can-sheng

S8550
S8550
TO-92 Plastic-Encapsulate Transistors FEATURES TO-92 Power dissipation PC : 1 W (TA=25℃) 1.EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2.BASE 1 2 3 Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units 3.COLLECTOR VCBO -40 V VCBO VCBO Collector-Base Voltage VCBO ELECTRICAL ELECTRICAL ELECTRICAL ELECTRICAL VCEO -25 V VCEO VCEO Collector-Emitter Voltage VCEO CHARACTERISTICS CHARACTERISTICS CHARACTERISTICS (Tamb=25℃ CHARACTERISTICS VEBO -5 V VEBO VEBO Emitter-Base Voltage VEBO unless otherwise specified) IC Collector Current-Continuous -1.5 A IC IC IC Tj Junction Temperature 150 ℃ Tj Tj Tj Tstg -55-150 ℃ Tstg Tstg Storage Temperature Tstg UN UN UN UN Parameter Symbol Test conditions MIN TYP MAX Parameter Symbol Test conditions MIN TYP MAX Parameter Symbol Test conditions MIN TYP MAX Parameter Symbol Test conditions MIN TYP MAX IT IT IT IT Collec

1.30. s8550a.pdf Size:444K _blue-rocket-elect

S8550
S8550
S8550A(BR3CG8550AK) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions TO-92 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-92 Plastic Package. 特征 / Features PC, IC 大,与 S8050A(BR3DG8050AK)互补。 High PC and IC, complementary pair with S8050A(BR3DG8050AK). 用途 / Applications 用于乙类推挽功放。 Amplifier of portable radios in class B push-pull operation. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 1 2 3 PIN1:Base PIN 2:Collector PIN 3:Emitter 放大及印章代码 / hFE Classifications & Marking hFE Classifications B C D Symbol hFE Range 85~160 120~200 160~300 http://www.fsbrec.com 1 / 6 S8550A(BR3CG8550AK) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -25 V Emitter to Base Voltage VEBO -6.0 V Collector Current

1.31. s8550w.pdf Size:904K _blue-rocket-elect

S8550
S8550
S8550W(BR3CG8550W) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-323 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-323 Plastic Package. 特征 / Features 与 S8050W(BR3CG8050W)互补。 Complementary pair with S8050W(BR3CG8050W). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector 印章代码 / Marking hFE Classifications B C D Symbol hFE Range 85~160 120~200 160~300 Marking HY4B HY4C HY4D http://www.fsbrec.com 1 / 6 S8550W(BR3CG8550W) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -25 V Emitter to Base Voltage VEBO -6.0 V Collector Current - Continuous IC -800 mA Base Current - Continuou

1.32. s8550m.pdf Size:660K _blue-rocket-elect

S8550
S8550
S8550M(BR3CG8550M) Rev.C Feb.-2015 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package. 特征 / Features 与 S8050M(BR3DG8050M)互补。 Complementary pair with S8050M(BR3DG8050M). 用途 / Applications 用于功率放大电路。 Power amplifier applications. 内部等效电路 / Equivalent Circuit 引脚排列 / Pinning 3 2 1 PIN1:Emitter PIN 2:Base PIN 3:Collector 放大及印章代码 / hFE Classifications & Marking hFE Classifications B C D Symbol hFE Range 85~160 120~200 160~300 Marking HY4B HY4C HY4D http://www.fsbrec.com 1 / 6 S8550M(BR3CG8550M) Rev.C Feb.-2015 DATA SHEET 极限参数 / Absolute Maximum Ratings(Ta=25℃) 参数 符号 数值 单位 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -25 V Emitter to Base Voltage VEBO -6.0 V Collector Current IC -800 mA Base Curren

1.33. ss8550lt1.pdf Size:975K _shenzhen-tuofeng-semi

S8550
S8550
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8550LT1 TRANSISTOR (PNP) SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 3. COLLECTOR PCM: 0.2 W (Tamb=25℃) Collector current ICM: -1.5 A Collector-base voltage V(BR)CBO: -25 V Operating and storage junction temperature range TJ, Tstg: -55℃to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V -25 V (BR)CBO Ic= -100µA, I =0 E Collector-emitter breakdown voltage V Ic= -0.1mA, I =0 -20 V (BR)CEO B Emitter-base breakdown voltage V(BR)EBO -5 V I = -100µA, I =0 E C Collector cut-off current I V = -25V, I =0 -0.1 CBO CB E µA Collector cut-off current ICEO VCE= -20V, IB=0 -0.1 µA Emitter cut-off current I V = -5V, I =0 -0.1 EBO EB C µA h V = -1V, I = -100mA 120 350 FE(1) CE C DC current gain h V = -1V, I = -800mA 4

1.34. s8550lt1.pdf Size:361K _shenzhen-tuofeng-semi

S8550
S8550
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S8550LT1 TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM: 0.3 W (Tamb=25℃) 1. 3 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Unit: mm Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V -40 V (BR)CBO Ic= -100µA, I =0 E Collector-emitter breakdown voltage V Ic=-1mA, I =0 -25 V (BR)CEO B Emitter-base breakdown voltage V -5 V (BR)EBO I = -100µA, I =0 E C Collector cut-off current ICBO VCB= -40V, IE=0 -0.1 µA Collector cut-off current I V = -20V, I =0 -0.1 CEO CE B µA Emitter cut-off current I V = -3V, I =0 -0.1 EBO EB C µA h V = -1V, I = -50mA 120 350 FE(1) CE C DC current gain

1.35. s8550.pdf Size:147K _shenzhen-tuofeng-semi

S8550
S8550
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8550 TRANSISTOR (PNP) TO-92 FEATURE Power dissipation 1. EMITTER PCM: 0.625 W (Tamb=25℃) 2. BASE Collector current 3. COLLECTOR ICM: -0.5 A Collector-base voltage 1 2 3 V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR) V CBO Ic= -100µA , I =0 -40 E Collector-emitter breakdown voltage V(BR) Ic= -0.1 mA, I =0 -25 V CEO B Emitter-base breakdown voltage V(BR) V EBO I = -100µA, I =0 -5 E C Collector cut-off current I V = -40V, I =0 -0.1 CBO CB E µA Collector cut-off current I V = -20V, I =0 -0.1 CEO CE B µA Emitter cut-off current IEBO VEB= - 3V, IC=0 -0.1 µA h V = -1V, I = -50mA 85 300 FE(1) CE C DC current gain h V = -1V,

1.36. ss8550.pdf Size:401K _shenzhen-tuofeng-semi

S8550
S8550
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25℃) 3. COLLECTOR : 2 W (TC=25℃) 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -1500 mA Junction and Storage Temperature TJ, Tstg -55-150 ℃ *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-100uA, IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO Ic=-0.1mA, IB=0 -25 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA, IC=0 -5 V Collector cut-

See also transistors datasheet: MMBT589 , MMBTA44 , MMBTA94 , PXT3904 , PXT3906 , PXT8050 , PXT8550 , S8050 , S9014 , S9012 , S9013 , S9013W , S9014 , S9014W , S9015 , S9015W , S9018 .

Keywords

 S8550 Datasheet  S8550 Datenblatt  S8550 RoHS  S8550 Distributor
 S8550 Application Notes  S8550 Component  S8550 Circuit  S8550 Schematic
 S8550 Equivalent  S8550 Cross Reference  S8550 Data Sheet  S8550 Fiche Technique

 

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