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S9014
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S9014
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S9014
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100DA025D .. 2N1011
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2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU508AW
BU508AX .. BUL57PI
BUL58A .. BUV28F
BUV28FI .. BUX76
BUX77 .. C744
C760 .. CEN-A44
CEN-A45 .. CJD175
CJD176 .. CMPT5179
CMPT5401 .. CS9013E
CS9013F .. CSB858B
CSB858C .. CSD1468R
CSD1468S .. CZT4033
CZT5338 .. D38W13
D38W14 .. D44VH7
D44VH8 .. DH3467CD
DH3467CN .. DTA115TEA
DTA115TKA .. DTC143T
DTC143TCA .. DXTA92
DXTN07100BP5 .. ECG342
ECG343 .. ES3124
ES3125 .. FA1F4Z
FA1L3M .. FJV3103R
FJV3104R .. FMMT489
FMMT4890 .. FT3641
FT3642 .. GBD266
GBD267 .. GES4249
GES4250 .. GFT44/15E
GFT44/30 .. GT2906
GT305A .. HA7530
HA7531 .. HN1A02F
HN1A07F .. HUN5213
HUN5214 .. JC556A
JC556B .. KF507
KF508 .. KRA726T
KRA726U .. KRC659E
KRC659F .. KSA614-O
KSA614-R .. KSC2518
KSC2518-O .. KSD1691-O
KSD1691-Q .. KSR2006
KSR2007 .. KT315A
KT315A-1 .. KT6103A
KT6104A .. KT8123A
KT8124A .. KT847B
KT848A .. KTA1659A
KTA1660 .. KTC802E
KTC8050 .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE3520
MJE3521 .. MM4010
MM4018 .. MMBT4401T
MMBT4401W .. MMUN2132
MMUN2132L .. MP37A
MP37B .. MPQ5140
MPQ5141 .. MPS751
MPS753 .. MRF342
MRF3866R2 .. MUN5334DW1
MUN5335DW .. NB011EJ
NB011EK .. NB122H
NB122HH .. NB322F
NB322H .. NPS3702
NPS3703 .. NSS30070MR6T1G
NSS30071MR6T1G .. OC450K
OC45N .. PBSS304NZ
PBSS304PD .. PEMB14
PEMB15 .. PN4124
PN4125 .. PZT6718
PZT751 .. RN1119MFV
RN1130MFV .. RN2316
RN2317 .. RS7641
RT141 .. SD338
SD339 .. SGS112
SGS115 .. SRA2201
SRA2201E .. STA124SF
STA3073F .. SUR561J
SUR566EF .. TA1628
TA1650A .. TI619
TI620 .. TIP75
TIP75A .. TN3253
TN3390 .. TP4140
TP4141 .. UMD16N
UMD1N .. UN6123
UN6124 .. ZT1480
ZT1481 .. ZTX331K
ZTX331M .. ZXTN25020DZ
ZXTN25040DFH .. ZXTPS720MC
 
S9014 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

S9014 Transistor Datasheet. Parameters and Characteristics.

Type Designator: S9014

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 200

Noise Figure, dB: -

Package of S9014 transistor: SOT23

S9014 Equivalent Transistors - Cross-Reference Search

S9014 PDF doc:

1.1. ss9014.pdf Size:38K _fairchild_semi

S9014
S9014
SS9014 Pre-Amplifier, Low Level & Low Noise High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current 100 mA PC Collector Power Dissipation 450 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC =100A, IE =0 50 V BVCEO Collector-Emitter Breakdown Voltage IC =1mA, IB =0 45 V BVEBO Emitter-Base Breakdown Voltage IE =100A, IC =0 5 V ICBO Collector Cut-off Current VCB =50V, IE =0 50 nA IEBO Emitter Cut-off Current VEB =5V, IC =0 50 nA hFE DC Current Gain VCE =5V, IC =1mA 60 2

1.2. ss9014.pdf Size:47K _samsung

S9014
S9014
SS9014 NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE TO-92 High total power dissipation. (PT=450mW) High hFE and good linearity Complementary to SS9015 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 45 V Emitter-Base Voltage VEBO 5 mA Collector Current IC 100 mW Collector Dissipation PC 450 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC =100 , IE =0 50 V Collector-Emitter Breakdown Voltage BVCEO IC =1mA, IB =0 45 V Emitter-Base Breakdown Voltage BVEBO IE =100 , IC =0 V 5 Collector Cut-off Current ICBO VCB =50V, IE =0 50 nA Emitter Cut-off Current IEBO VEB =5V, IC =0 50 nA DC Current Gain hFE VCE =5V, IC =1mA 60 280 1000 Collector-Base Saturation Voltage VC

1.3. sts9014.pdf Size:207K _auk

S9014
S9014
STS9014 NPN Silicon Transistor Description PIN Connection • General purpose application C • Switching application Features B • Excellent hFE linearity : hFE(IC=0.1 mA) / hFE(IC=2 mA) = 0.95(Typ.) • Low noise : NF=10dB(Max.) at f=1KHz E • Complementary pair with STS9015 TO-92 Ordering Information Type NO. Marking Package Code STS9014 STS9014 TO-92 Absolute maximum ratings (Ta=25°C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 50 V Emitter-Base voltage VEBO 5 V Collector current IC 150 mA Emitter current IE -150 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C Electrical Characteristics (Ta=25°C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector cut-off current ICBO VCB=50V, IE=0 - - 50 nA Emitter cut-off current IEBO VEB=5V, IC=0 - - 100 nA DC current gain hFE* VCE=5V, IC=1mA 100 - 1000 - Collec

1.4. s9014.pdf Size:253K _secos

S9014
S9014
S9014 NPN Silicon Elektronische Bauelemente Pre-Amplifier, Low Level & Low Noise RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector ? Dim Min Max 3 3 ? A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 ? C 0.890 1.110 2 Base PCM : 0.2 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM : 0.1 A A Emitter H 0.013 0.100 L Collector-base voltage J 0.085 0.177 3 V(BR)CBO : 50 V K 0.450 0.600 S Top View B Operating & storage junction temperature 12 L 0.890 1.020 O O Tj, Tstg : - 55 C ~ + 150 C S 2.100 2.500 V G V 0.450 0.600 All Dimension in mm C H J D K O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 50 V Ic= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current I

1.5. s9014t.pdf Size:130K _secos

S9014
S9014
S9014T NPN Silicon Elektronische Bauelemente Pre-Amplifier, Low Level & Low Noise RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 FEATURES 4.55±0.2 3.5±0.2 ? Power dissipation ? PCM : 0.4 W Collector current ICM : 0.1 A Collector-base voltage V(BR)CBO : 50 V 0.43+0.08 –0.07 46+0.1 0. –0.1 Operating & storage junction temperature (1.27 Typ.) O O Tj, Tstg : - 55 C ~ + 150 C 1: Emitter +0.2 1.25–0.2 2: Base 1 2 3 3: Collector 2.54±0.1 O ELECTRICAL CHARACTERISTICS ( Tamp.=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 50 V Ic= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO Ic= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current ICBO VCB=50 V , IE=0 0.1 ?A Collector cut-off current ICEO VCE=35V , IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 ?A DC cur

1.6. s9014w.pdf Size:263K _secos

S9014
S9014
S9014W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE Complementary to S9015W A L 3 3 Top View C B 1 1 2 2 K E PACKAGING INFORMATION Weight: 0.0074 g D Collector H J F G 3 Millimeter Millimeter REF. REF. Min. Max. Min. Max. MARKING CODE 1 A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. Base C 1.15 1.35 J 0.08 0.25 J6 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. 2 F 0.20 0.40 Emitter ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 50 V Collector to Emitter Voltage VCEO 45 V Emitter to Base Voltage VEBO 5 V Collector Current – Continuous IC 100 mA Collector Power Dissipation PC 200 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise specified) Parameter Symbol Min.

1.7. s9014.pdf Size:821K _htsemi

S9014
S9014
S901 4 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER Complementary to S9015 3. COLLECTOR MARKING: J6 unless otherwise noted) MAXIMUM RATINGS (TA=25? Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 ?A Collector cut-off current ICEO VCE=35V , IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 ?A DC current gain hFE VCE=5V, IC= 1mA 200 1000 Collector-emitte

1.8. s9014w.pdf Size:458K _htsemi

S9014
S9014
S901 4W TRANSISTOR(NPN) SOT–323 FEATURES ? Complementary to S9015W ? Small Surface Mount Package MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 50 V CBO 2. EMITTER V Collector-Emitter Voltage 45 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Current 100 mA P Collector Power Dissipation 200 mW C R Thermal Resistance From Junction To Ambient 625 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100µA, I =0 50 V (BR)CBO C E Collector-emitter breakdown voltage V I =100µA, I =0 45 V (BR)CEO C B Emitter-base breakdown voltage V(BR)EBO IE=100µA, IC=0 5 V Collector cut-off current I V =50V, I =0 100 nA CBO CB E Collector cut-off current I V =35V, I =0 100 nA CEO CE B Emitter cu

1.9. s9014.pdf Size:241K _gsme

S9014
S9014
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9014 FEATURES ¦FEATURES ?? FEATURES Excellent HFE Linearity HFE ??????:HFE(0.1mA)/ hFE(2mA)=0.95(Typ.) High HFE ? HFE:HFE=200?700 Low Noise ???:NF=1dB(Typ.),10dB(Max.). Complementary to GM9015 ? GM9015 ?? MAXIMUM RATINGS (Ta=25 ) ¦MAXIMUM RATINGS (Ta=25?) ????? MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC Symbol Rating Unit ???? ?? ??? ?? Collector-Base Voltage VCBO 50 Vdc ???-???? Collector-Emitter Voltage VCEO 45 Vdc ???-????? Emitter-Base Voltage VEBO 5.0 Vdc ???-???? Collector Current-Continuous Ic 150 mAdc ?????-?? Base Current IB 30 mAdc ???? Collector Power Dissipation PC 225 mW ??????? Junction Temperature Tj 150 ? ?? Storage Temperature Range Tstg -55?150 ? ???? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING GM9014=J6 GM9014=J6 GM9014=J6 ? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Mic

1.10. s9014_sot-23.pdf Size:198K _lge

S9014
S9014
S9014 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9015 MARKING: J6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.2 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=50 V , IE=0 0.1 ?A Collector cut-off current ICEO VCE=35V , IB=0 0.1 ?A Emitter cut-off current IEBO VEB= 3V , IC=0 0.1 ?A DC current gain hFE VCE

1.11. s9014_to-92.pdf Size:190K _lge

S9014
S9014
S9014(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9015 MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V Dimensions in inches and (millimeters) VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.1 A PC Collector Power Dissipation 0.45 W TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=100?A, IE=0 50 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 45 V Emitter-base breakdown voltage V(BR)EBO IE=100?A, IC=0 5 V Collector cut-off current ICBO VCB=50V, IE=0 0.1 ?A Collector cut-off current ICEO VCE=35V, IB=0 0.1 ?A Emitter cut

1.12. s9014lt1.pdf Size:191K _wietron

S9014
S9014
S9014LT1 3 1 2 SOT-23 Value V CEO 45 50 5.0 100 225 1.8 556 S9014QLT1=14Q S9014RLT1=14R S9014SLT1=14S S9014TLT1=14T 0.1 45 50 100 100 u 0.1 40 0.1 u 3.0 WEITRON 1/ 28-Apr-2011 http://www.weitron.com.tw S9014LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain hFE 1000 150 - (IC=1.0 mAdc, V CE=5.0 Vdc) Collector-Emitter Saturation Voltage VCE(sat) - Vdc 0.3 (I C=100 mAdc, I B=5.0mAdc) CLASSIFICATION OF h FE Rank Q R S T Range 150-300 200-400 300-600 400-1000 SOT-23 Outline Dimension SOT-23 A Dim Min Max A 0.35 0.51 B 1.19 1.40 B C TOP VIEW C 2.10 3.00 D 0.85 1.05 D E 0.46 1.00 G E G 1.70 2.10 H H 2.70 3.10 J 0.01 0.13 K K 0.89 1.10 L L 0.30 0.61 J M M 0.076 0.25 WEITRON 2/ 28-Apr-2011 http://www.weitron.com.tw S9014LT1 STATIC CHARACTERISTIC DC CURRENT GAIN BASE-EMITTER SATURATION VOLTAGE CURRENT GAIN-BANDWIDT

1.13. s9014.pdf Size:824K _wietron

S9014
S9014
S9014 NPN General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO 45 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 100 mAdc PD 0.4 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55 to +150 Storage, Temperature Tstg C ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Max Unit - Collector-Emitter Breakdown Voltage (IC= 0.1 mAdc, IB=0) V(BR)CEO 45 Vdc Collector-Base Breakdown Voltage (IC= 100uAdc, IB=0) V(BR)CBO 50 - Vdc Vdc V(BR)EBO 5.0 - Emitter-Base Breakdown Voltage (IE= 100 uAdc, IC=0) - ICBO uAdc 0.1 Collector Cutoff Current (V = 50 Vdc, IE=0) CB - IEBO d Emitter Cutoff Current (VEB= 3.0V c, I =0) 0.1 uAdc C WEITRON http://www.weitron.com.tw S9014 WEITRON WEITR ON Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristi

See also transistors datasheet: PXT3906 , PXT8050 , PXT8550 , S8050 , S8550 , S9012 , S9013 , S9013W , S8550 , S9014W , S9015 , S9015W , S9018 , S9018W , SS8550B , STD123S , SC116 .

Keywords

 S9014 Datasheet  S9014 Datenblatt  S9014 RoHS  S9014 Distributor
 S9014 Application Notes  S9014 Component  S9014 Circuit  S9014 Schematic
 S9014 Equivalent  S9014 Cross Reference  S9014 Data Sheet  S9014 Fiche Technique

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