All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
S9018
  S9018
  S9018
 
S9018
  S9018
  S9018
 
S9018
  S9018
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
S9018 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

S9018 Transistor Datasheet. Parameters and Characteristics.

Type Designator: S9018

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 30

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.05

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 600

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of S9018 transistor: SOT23

S9018 Equivalent Transistors - Cross-Reference Search

S9018 PDF doc:

1.1. ss9018.pdf Size:40K _fairchild_semi

S9018
S9018
SS9018 AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current 50 mA PC Collector Power Dissipation 400 mW TJ Junction Temperature 150 C TSTG Storage Temperature -55 ~ 150 C Electrical Characteristics Ta=25C unless otherwise noted Symbol Parameter Test Condition Min. Typ. Max. Units BVCBO Collector-Base Breakdown Voltage IC =100A, IE =0 30 V BVCEO Collector-Emitter Breakdown Voltage IC =1.0mA, IB =0 15 V BVEBO Emitter-Base Breakdown Voltage IE =100A, IC =0 5 V ICBO Collector Cut-off Current VCB =12V, IE =0 50 nA hFE Emitter Cut-off Current VCE =5V, IC =1.0mA 28 100 198 VCE (sat) Collector-Emitter Saturation Voltage IC =10mA, IB =1m

1.2. ss9018.pdf Size:48K _samsung

S9018
S9018
SS9018 NPN EPITAXIAL SILICON TRANSISTOR AM/FM AMPLIFIER, LOCAL OSCILLATOR TO-92 OF FM/VHF TUNER High Current Gain Bandwidth Product fT=1,100 MHz (Typ) ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage VEBO 5 mA Collector Current IC 50 mW Collector Dissipation PC 400 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC =100 , IE =0 30 V Collector-Emitter Breakdown Voltage BVCEO IC =1.0mA, IB =0 15 V Emitter-Base Breakdown Voltage BVEBO IE =100 , IC =0 V 5 Collector Cut-off Current ICBO VCB =12V, IE =0 50 nA Emitter Cut-off Current hFE VCE =5V, IC =1.0mA 28 100 198 Collector-Emitter Saturation Voltage VCE (sat) IC =10mA, IB =1mA 0.5 V Output Capacitance COB VCB =10V, IE

1.3. sts9018.pdf Size:232K _auk

S9018
S9018
STS9018 NPN Silicon Transistor Description PIN Connection • High frequency low noise amplifier application C • VHF band amplifier application B Features • Low noise figure : NF = 4dB(Max.) at f=100MHz • High transition frequency fT = 800MHz(Typ.) E TO-92 Ordering Information Type NO. Marking Package Code STS9018 STS9018 TO-92 Absolute maximum ratings Ta=25°C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 40 V Collector-Emitter voltage VCEO 30 V Emitter-Base voltage VEBO 4 V Collector current IC 20 mA Emitter current IE -20 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~150 °C Electrical Characteristics Ta=25°C Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector cut-off current ICBO VCB=40V, IE=0 - - 0.1 ?A Emitter cut-off current IEBO VEB=4V, IC=0 - - 0.1 ?A DC current gain hFE* VCE=5V, IC=1mA 54 - 198 - Transistor frequency fT VCE=10V

1.4. s9018t.pdf Size:105K _secos

S9018
S9018
S9018T NPN Plastic-Encapsulate Transistors RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55±0.2 3.5±0.2 FEATURE Power dissipation o P CM : 0.4 W (Tamb= 2 5 C) Collector current CM: 0.05 A I 0.43+0.08 –0.07 Collector-base voltage 46+0.1 0. –0.1 V(BR)CBO : 25 V (1.27 Typ.) Operating and storage junction temperature range 1: Emitter +0.2 1.25–0.2 2: Base 1 2 3 stg: Tj, T -55 oC to +150 oC 3: Collector 2.54±0.1 o ELECTRICAL CHARACTERISTICS (Tamb=25 C unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR) 25 V CBO Ic= 100µA, I =0 E Collector-emitter breakdown voltage V(BR) Ic= 0. 1mA, I =0 18 V CEO B Emitter-base breakdown voltage V(BR) 4 V EBO I = 100µA, I =0 E C Collector cut-off current ICBO VCB= 20V, IE=0 0.1 µA Collector cut-off current I V = 15V, I =0 0.1 CEO CE B µA Emitter cut-off current I V = 3V, I =0 0.1 EBO

1.5. s9018.pdf Size:208K _secos

S9018
S9018
S9018 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector ? Dim Min Max 3 3 ? A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 ? C 0.890 1.110 2 Base PCM : 0.2 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM : 0.05 A A Emitter H 0.013 0.100 L Collector-base voltage J 0.085 0.177 3 V(BR)CBO : 25 V K 0.450 0.600 S Top View B Operating & storage junction temperature 12 L 0.890 1.020 O O Tj, Tstg : - 55 C ~ + 150 C S 2.100 2.500 V G V 0.450 0.600 All Dimension in mm C H J D K ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 25 V Ic= 100µA, I =0 E Collector-emitter breakdown voltage V Ic= 0.1mA, I =0 18 V (BR)CEO B Emitter-base breakdown voltage V 4 V (BR)EBO I =100µA, I =0 E C Collector cut-off curren

1.6. s9018w.pdf Size:296K _secos

S9018
S9018
S9018W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURE AM/FM Amplifier, Local Oscillator of FM/VHF Tuner A L High Current Gain Bandwidth Product fT = 1.1 GHz (Typ) 3 3 Top View C B 1 1 2 2 K E PACKAGING INFORMATION D Weight: 0.0074 g H J F G Collector 3 Millimeter Millimeter REF. REF. Min. Max. Min. Max. MARKING CODE 1 A 1.80 2.20 G 0.100 REF. B 1.80 2.45 H 0.525 REF. Base C 1.15 1.35 J 0.08 0.25 J8 D 0.80 1.10 K - - E 1.20 1.40 L 0.650 TYP. 2 F 0.20 0.40 Emitter ABSOLUTE MAXIMUM RATINGS (at TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 30 V Collector to Emitter Voltage VCEO 15 V Emitter to Base Voltage VEBO 5 V Collector Current – Continuous IC 50 mA Collector Power Dissipation PC 200 mW Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ? ELECTRI

1.7. s9018.pdf Size:452K _htsemi

S9018
S9018
S9018 TRANSISTOR (NPN) SOT-23 1. BASE FEATURES 2. EMITTER 3. COLLECTOR AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MARKING:J8 MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (T =25? unless otherwise specified) a Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO 30 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 15 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current ICBO VCB=12V, IE=0 0.05 ?A Collector cut-off current ICEO VCE=12V, IB=0 0.1 ?A Emitter cut-off current IEBO

1.8. s9018w.pdf Size:303K _htsemi

S9018
S9018
S9018W TRASISTOR(NPN) SOT–323 FEATURES ? Small Surface Mount Package MAXIMUM RATINGS (Ta=25? unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 30 V CBO 1. BASE V Collector-Emitter Voltage 15 V CEO 2. EMITTER V Emitter-Base Voltage 5 V EBO 3. COLLECTOR I Collector Current 50 mA C PC Collector Power Dissipation 200 mW R Thermal Resistance From Junction To Ambient 625 ?/W ?JA T Junction Temperature 150 ? j T Storage Temperature -55~+150 ? stg ELECTRICAL CHARACTERISTICS (Ta=25? unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V I =100µA, I =0 30 V (BR)CBO C E Collector-emitter breakdown voltage V I =1mA, I =0 15 V (BR)CEO C B Emitter-base breakdown voltage V I =100µA, I =0 5 V (BR)EBO E C Collector cut-off current I V =12V, I =0 50 nA CBO CB E Collector cut-off current ICEO VCE=12V, IB=0 100 nA Emitter cut-off current I V =3V, I =0 100 nA

1.9. s9018.pdf Size:278K _gsme

S9018
S9018
? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9018 MAXIMUM RATINGS ¦MAXIMUM RATINGS ????? MAXIMUM RATINGS Characteristic Symbol Rating Unit ???? ?? ??? ?? Collector-Emitter Voltage VCEO 20 Vdc ???????? Collector-Base Voltage VCBO 30 Vdc ??????? Emitter-Base Voltage VEBO 5.0 Vdc ??????? Collector Current-Continuous Ic 50 mAdc ?????-?? THERMAL CHARACTERISTICS ¦THERMAL CHARACTERISTICS ??? THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ?? ???? ?? ??? PD Total Device Dissipation ????? 225 mW FR-5 Board(1) TA=25?????? 25? 1.8 mW/? Derate above25? ?? 25??? PD Total Device Dissipation ????? 300 mW Alumina Substrate ?????,(2)TA=25? Derate above25??? 25??? 2.4 mW/? Thermal Resistance Junction to Ambient R ?JA 417 ?/W ?? Junction and Storage Temperature TJ,Tstg -55to+150? ??????? DEVICE MARKING ¦DEVICE MARKING ?? DEVICE MARKING GM9018

1.10. s9018.pdf Size:277K _lge

S9018
S9018
S9018 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features AM/FM Amplifier, Local Oscillator of FM/VHF Tuner High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MARKING:J8 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 200 mW Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO 30 V IC= 100?A, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 15 V Emitter-base breakdown voltage V(BR)EBO 5 V IE=100?A, IC=0 Collector cut-off current ICBO VCB=12V, IE=0 0.05 ?A Collector cut-off current ICEO VCE=12V, IB=0 0

1.11. s9018_to-92.pdf Size:167K _lge

S9018
S9018
S9018(NPN) TO-92 Bipolar Transistors 1. TO-92 EMITTER 2. BASE 3. COLLECTOR Features High Current Gain Bandwidth Product fT=1.1 GHz (Typ) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 18 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters) IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 0.4 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 100?A, IE=0 25 V Collector-emitter breakdown voltage V(BR)CEO IC= 0. 1mA, IB=0 18 V Emitter-base breakdown voltage V(BR)EBO IE= 100?A, IC=0 4 V Collector cut-off current ICBO VCB= 20V, IE=0 0.1 ?A Collector cut-off current ICEO VCE=15V,IB=0 0.1 ?A Emitter cut-off current IEBO VEB=3V, IC=0 0

See also transistors datasheet: S8550 , S9012 , S9013 , S9013W , S9014 , S9014W , S9015 , S9015W , BC547B , S9018W , SS8550B , STD123S , SC116 , SC117 , SC118 , SC119 , SC206 .

Keywords

 S9018 Datasheet  S9018 Datenblatt  S9018 RoHS  S9018 Distributor
 S9018 Application Notes  S9018 Component  S9018 Circuit  S9018 Schematic
 S9018 Equivalent  S9018 Cross Reference  S9018 Data Sheet  S9018 Fiche Technique

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com