All Transistors. 2N5937 Datasheet

 

2N5937 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N5937
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 175 W
   Maximum Collector-Base Voltage |Vcb|: 170 V
   Maximum Collector-Emitter Voltage |Vce|: 160 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 30 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO3

 2N5937 Transistor Equivalent Substitute - Cross-Reference Search

   

2N5937 Datasheet (PDF)

 ..1. Size:11K  semelab
2n5937.pdf

2N5937

2N5937Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 160V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.1. Size:12K  semelab
2n5935.pdf

2N5937

2N5935Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

 9.2. Size:12K  semelab
2n5934.pdf

2N5937

2N5934Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 140V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.3. Size:12K  semelab
2n5930.pdf

2N5937

2N5930Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 120V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.4. Size:11K  semelab
2n5933.pdf

2N5937

2N5933Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 100V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.5. Size:11K  semelab
2n5936.pdf

2N5937

2N5936Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 120V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 30A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

 9.6. Size:165K  cn sptech
2n5935.pdf

2N5937
2N5937

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N5935DESCRIPTIONDC Current Gain-: h = 20-100@I = 30AFE CLow Collector Saturation Voltage-: V )= 2.0V(Max)@ I = 20ACE(sat CAPPLICATIONSDesigned for use in power switching circuits,audio amplifiers,series and shunt-regulators, driver and output stages,DC-DCconverters, inverters, and solenoid /relay dri

Datasheet: 2N593 , 2N5930 , 2N5931 , 2N5932 , 2N5933 , 2N5934 , 2N5935 , 2N5936 , 2SC1815 , 2N5938 , 2N5939 , 2N594 , 2N5940 , 2N5941 , 2N5941T , 2N5942 , 2N5943 .

 

 
Back to Top