MJE13003B Transistor Datasheet. Parameters and Characteristics.

Type Designator: MJE13003B

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1

Maximum collector-base voltage |Ucb|, V: 0

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 9

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of MJE13003B transistor: TO92

MJE13003B Equivalent Transistors - Cross-Reference Search

MJE13003B PDF document for downloads:

1.1. mje13003b.pdf Size:178K _wietron

WEITRON MJE13003B High Voltage Fast-switching COLLECTOR 2. NPN Power Transistor P b Lead(Pb)-Free 1. EMITTER 3. 2. COLLECTOR BASE 3. BASE DESCRIPTION: 1. The device is manufactured using high voltage EMITTER TO-92 Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The MJE13003B is designed for use in compact fluorescent lamp application. FEATURE: * Medium Voltage Capability * Low Spread Of Dynamic Parameters * Minimum Lot-to-lot Spread For Reliable Operation * Very High Switching Speed APPLICATIONS: * Electronic Ballasts For Fluorescent Lighting ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit Collector-Emitter Voltage (VBE = 0) VCES 700 V Collector-Emitter Voltage (IB = 0) VCEO 400 V Emitter-Base Voltage (I = 0) V 9 V C EBO Collector Current I 1 A C Collector Peak Current (t <

2.1. mje13003.pdf Size:107K _onsemi

MJE13003 SWITCHMODEt Series NPN Silicon Power Transistor These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE applications http://onsemi.com such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. 1.5 AMPERES Features NPN SILICON POWER • Reverse Biased SOA with Inductive Loads @ TC = 100_C TRANSISTORS • Inductive Switching Matrix 0.5 to 1.5 A, 25 and 100_C 300 AND 400 VOLTS tc @ 1 A, 100_C is 290 ns (Typ) • 700 V Blocking Capability 40 WATTS • SOA and Switching Applications Information • Pb-Free Package is Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO(sus) 400 Vdc IIIIIIIIIIII IIII III III TO-225 Collector-Emitter Voltage VCEVIIII Vdc 700 IIIIIIIIIIII IIIIIIIIIIII IIII III III III III CASE 77 Emitter Base Voltage VEBO 9 Vdc STYLE 3 IIIIIIIIIIII

2.2. mje13003.pdf Size:53K _kec

SEMICONDUCTOR MJE13003 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A B HIGH VOLTAGE AND HIGH SPEED D C SWITCHING APPLICATION. E F FEATURES ·Excellent Switching Times G : ton=1.1? S(Max.), at IC=1A S(Max.), tf=0.7? H ·High Collector Voltage : VCBO=700V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 _ + F 11.0 0.3 MAXIMUM RATING (Ta=25?) G 2.9 MAX M H 1.0 MAX CHARACTERISTIC SYMBOL RATING UNIT J 1.9 MAX O + _ K 0.75 0.15 N P VCBO Collector-Base Voltage 700 V _ + L 15.50 0.5 1 2 3 _ + M 2.3 0.1 VCEO Collector-Emitter Voltage 400 V _ + N 0.65 0.15 O 1.6 1. EMITTER VEBO Emitter-Base Voltage 9 V P 3.4 MAX 2. COLLECTOR 3. BASE IC DC 1.5 Collector Current A ICP Pulse 3 TO-126 IB Base Current 0.75 A 1.5 Ta=25? Collector Power PC W Dissipation 20 Tc=25? Tj Junction Temperature 150 ? Tstg -55?150 ? Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25?)

2.3. mje13003hv.pdf Size:41K _kec

SEMICONDUCTOR MJE13003HV TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR SWITCHING REGULATOR APPLICATION. A HIGH VOLTAGE AND HIGH SPEED B D C SWITCHING APPLICATION. E F FEATURES Excellent Switching Times G : ton=1.1 S(Typ.), tf=0.7 S(Typ.), at IC=1A H High Collector Voltage : VCBO=900V. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D ?3.2 0.1 E 3.5 _ + F 11.0 0.3 MAXIMUM RATING (Ta=25 ) G 2.9 MAX M H 1.0 MAX CHARACTERISTIC SYMBOL RATING UNIT J 1.9 MAX O _ + K 0.75 0.15 N VCBO Collector-Base Voltage 900 V P _ + L 15.50 0.5 1 2 3 _ + M 2.3 0.1 VCEO Collector-Emitter Voltage 530 V _ + N 0.65 0.15 O 1.6 1. EMITTER VEBO Emitter-Base Voltage 9 V P 3.4 MAX 2. COLLECTOR 3. BASE IC DC 1.5 Collector Current A ICP Pulse 3 TO-126 IB Base Current 0.75 A PC 20 W Collector Power Dissipation (Tc=25 ) Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TE

2.4. mje13003.pdf Size:169K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-126 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13003 Ў¤ Absolute maximum ratings (Tc=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg IN Collector-base voltage Collector-emitter voltage PARAMETER Emitter-base voltage Collector current (DC) Collector current-Peak CHA E SEM NG Open base Open emitter Open collector OND IC CONDITIONS TOR UC VALUE 700 400 9 1.5 3 0.75 1.5 2.25 4.5 UNIT V V V A A A A A A W Base current Base current-Peak Emitter current Emitter current-Peak Ta=25Ўж Total power dissipation TC=25Ўж Junction temperature Storage tempera

2.5. mje13003d.pdf Size:128K _inchange_semiconductor

INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operation APPLICATIONS ·Fluorescent lamp ·Electronic ballast ·Electronic transformer ·Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 2 A Collector Power Dissipation PC @TC=25? 40 W Junction Temperature 150 ? Tj Storage Temperature -65~150 ? Tstg INCHANGE Semiconductor Product Specification Silicon NPN Power Transistor MJE13003D ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;IBB= 0 400 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 9 V Collector-Emitter Saturation Voltage IC=

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