2N6053 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N6053

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 100

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 8

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 4

Collector capacitance (Cc), pF: 300

Forward current transfer ratio (hFE), min: 750

Noise Figure, dB: -

Package of 2N6053 transistor: TO3

2N6053 Equivalent Transistors - Cross-Reference Search

2N6053 PDF document for downloads:

1.1. 2n6055-2n6053.pdf Size:159K _comset

2N6053 PNP 2N6055 NPN COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N6053 VCEO #Collector-Emitter Voltage IB=0 60 V 2N6055 2N6053 VCBO Collector-Base Voltage IE=0 60 V 2N6055 2N6053 VEBO Emitter-Base Voltage 5.0 V 2N6055 2N6053 Continuous 8.0 2N6055 IC Collector Current A 2N6053 Peak 16 2N6055 2N6053 IB Base Current 120 mA 2N6055 2N6053 PTOT Total Dissipation @ TC = 25° 100 Watts 2N6055 2N6053 TJ Junction Temperature 200 °C 2N6055 2N6053 TS Storage Temperature -65 to +200 °C 2N6055 THERMAL CHARACTERISTICS Symbol Ratings Value Unit 2N6053 RthJC Thermal Resistance, Junction to Case 1.75 °C/W 2N6055 2N6053 PNP COMSET SEMICONDUCTORS 1/3 2N6053 PNP 2N6055 NPN ELECTR

1.2. 2n6053-56.pdf Size:172K _mospec

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1.3. 2n6053_2n6054.pdf Size:131K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6053 2N6054 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6055;2N6056 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(TC=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6053 -60 VCBO Collector-base voltage Open emitter V 2N6054 -80 2N6053 -60 VCEO Collector-emitter voltage Open base V 2N6054 -80 VEBO Emitter-base voltage Open collector -5 V IC Collector current -8 A ICM Collector current-peak -16 A IB Base current -120 mA PD Total Power Dissipation TC=25? 100 W Junction temperature 200 ? Tj Storage temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Thermal resistance junction to case 1.75 ?/W Rth j

See also transistors datasheet: 2N6048 , 2N6049 , 2N6049E , 2N604A , 2N605 , 2N6050 , 2N6051 , 2N6052 , 2N3563 , 2N6054 , 2N6055 , 2N6056 , 2N6057 , 2N6058 , 2N6059 , 2N606 , 2N6060 .

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