All Transistors. 2N6053 Datasheet

 

2N6053 Transistor. Datasheet pdf. Equivalent

Type Designator: 2N6053

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 4 MHz

Collector Capacitance (Cc): 300 pF

Forward Current Transfer Ratio (hFE), MIN: 750

Noise Figure, dB: -

Package: TO3

2N6053 Transistor Equivalent Substitute - Cross-Reference Search

2N6053 Datasheet PDF:

1.1. 2n6055-2n6053.pdf Size:159K _comset

2N6053
2N6053

2N6053 PNP 2N6055 NPN COMPLEMENTARY POWER DARLINGTON The 2N6053 is a silicon epitaxial base PNP transistor in monolithic Darlington configuration and are mounted in Jedec TO-3 metal case. They are intended for use in power linear and switching applications. The complementary NPN type is the 2N6055 ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N6053 VCEO #Collector-Emitter Voltage

1.2. 2n6053-56.pdf Size:172K _mospec

2N6053
2N6053

A A A A

1.3. 2n6053_2n6054.pdf Size:131K _inchange_semiconductor

2N6053
2N6053

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6053 2N6054 DESCRIPTION ·With TO-3 package ·Low collector saturation voltage ·DARLINGTON ·Complement to type 2N6055;2N6056 APPLICATIONS ·General-purpose power amplifier and low frequency swithing applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3

Datasheet: 2N6048 , 2N6049 , 2N6049E , 2N604A , 2N605 , 2N6050 , 2N6051 , 2N6052 , 5609 , 2N6054 , 2N6055 , 2N6056 , 2N6057 , 2N6058 , 2N6059 , 2N606 , 2N6060 .

 


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