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2N6095 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N6095

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 36

Maximum collector-emitter voltage |Uce|, V: 18

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 2.5

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 175

Collector capacitance (Cc), pF: 120

Forward current transfer ratio (hFE), min: 15

Noise Figure, dB: -

Package of 2N6095 transistor: X92

2N6095 Equivalent Transistors - Cross-Reference Search

2N6095 PDF doc:

5.1. 2n6093.pdf Size:24K _advanced-semi

2N6093 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE TO-217 DESCRIPTION: The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode. MAXIMUM RATINGS IC 10 A VCE 35 V PDISS 83.3 W @ TC = 75 OC 1 = Emitter & Diode Cathode TJ -65 OC to +200 OC 2 = Collector 3 = Base TSTG -65 OC to +200 OC 4 = Diode Anode ?-28 UNF Thread 1.50 OC/W ?JC ? ? ? NONE CHARACTERISTICS TC = 25 OC SYMBOL TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 200 mA 35 V BVCES IC = 200 mA 70 V ICES VCE = 60 V TC = 55 OC30 mA BVEBO IE = 20 mA 3.5 V hFE VCE = 6.0 V IC = 5.0 A 20 --- VF IF = 10 mA 0.8 V hfe VCE = 28 V IC = 1.0 A f = 50 MHz 2.0 --- COB VCB = 30 V f = 1.0 MHz 250 pF 1.88 PIE VCC = 28 V IC = 20 mA POE = 37.5 W W 3.75 f = 30 MHz POE = 75.0 W GPE 13 dB 40 ?C VCC = 28 V IC = 20 mA POE = 75.0 W % ? ? ? f = 30 MHz IMD dB -30 A D V A N C E D S E M

5.2. 2n6098_2n6099_2n6100_2n6101.pdf Size:119K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION Ў¤ With TO-220 package Ў¤ High current capability APPLICATIONS Ў¤ For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETER CONDITIONS VCBO CHA 2N6098 2N6099 2N6100 Open emitter Collector-base voltage VCEO Collector-emitter voltage 2N6100 2N6101 IN SEM NG 2N6101 2N6098 2N6099 CON I TOR DUC VALUE 70 70 80 80 70 70 80 80 UNIT V Open base V VEBO IC PT Tj Tstg Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Open collector 8 10 V A W Ўж Ўж TC=25Ўж 75 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.67 UNIT Ўж /W

See also transistors datasheet: 2N6088 , 2N6089 , 2N609 , 2N6090 , 2N6091 , 2N6092 , 2N6093 , 2N6094 , 2SA733 , 2N6096 , 2N6097 , 2N6098 , 2N6099 , 2N60A , 2N60B , 2N60C , 2N61 .

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