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2N60A Transistor (IC) Datasheet. Cross Reference Search. 2N60A Equivalent

Type Designator: 2N60A

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.15

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V:

Maximum emitter-base voltage |Ueb|, V: 10

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), °C: 85

Transition frequency (ft), MHz: 0.6

Collector capacitance (Cc), pF: 80

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of 2N60A transistor: TO5

2N60A Transistor Equivalent Substitute - Cross-Reference Search

2N60A PDF:

1.1. hgtg12n60a4d_hgtp12n60a4d_hgt1s12n60a4d.pdf Size:173K _fairchild_semi

2N60A
2N60A

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching 600V Swit

1.2. hgtg12n60a4_hgtp12n60a4_hgt1s12n60a4.pdf Size:207K _fairchild_semi

2N60A
2N60A

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices have the hi

1.3. ssp2n60a.pdf Size:939K _samsung

2N60A
2N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.4. ssw2n60a.pdf Size:509K _samsung

2N60A
2N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V 2 Lower RDS(ON) : 3.892 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristi

1.5. sss2n60a.pdf Size:507K _samsung

2N60A
2N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

1.6. ssr2n60a.pdf Size:505K _samsung

2N60A
2N60A

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 1.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 3.892 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic

1.7. ixgk72n60a3h1_ixgx72n60a3h1.pdf Size:229K _ixys

2N60A
2N60A

Advance Technical Information GenX3TM 600V IGBT VCES = 600V IXGK72N60A3H1 w/Diode IC110 = 72A IXGX72N60A3H1 ? VCE(sat) ? ?? 1.35V ? ? tfi(typ) = 250ns Ultra-Low Vsat PT IGBTs for up to 5kHz Switching TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V (TAB) G VGES Continuous 20 V C E VGEM Transient 30

1.8. aod2n60a.pdf Size:428K _aosemi

2N60A
2N60A

AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V • Advanced High Voltage MOSFET technology • Low RDS(ON) ID (at VGS=10V) 2A • Low Ciss and Crss RDS(ON) (at VGS=10V) < 4.7Ω • High Current Capability • RoHS and Halogen Free Compliant Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCF

1.9. aoi2n60a.pdf Size:428K _aosemi

2N60A
2N60A

AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V • Advanced High Voltage MOSFET technology • Low RDS(ON) ID (at VGS=10V) 2A • Low Ciss and Crss RDS(ON) (at VGS=10V) < 4.7Ω • High Current Capability • RoHS and Halogen Free Compliant Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCF

1.10. aou2n60a.pdf Size:428K _aosemi

2N60A
2N60A

AOD2N60A/AOI2N60A/AOU2N60A 600V,2A N-Channel MOSFET General Description Product Summary VDS @ Tj,max 700V • Advanced High Voltage MOSFET technology • Low RDS(ON) ID (at VGS=10V) 2A • Low Ciss and Crss RDS(ON) (at VGS=10V) < 4.7Ω • High Current Capability • RoHS and Halogen Free Compliant Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCF

1.11. cm12n60af.pdf Size:126K _jdsemi

2N60A
2N60A

R CM12N60AF 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 1 通态电阻小,输入电容小

1.12. cm12n60a_to220a.pdf Size:123K _jdsemi

2N60A
2N60A

R CM12N60A 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 主要用于充电器、LD驱动、电源适配器 E 等各类功率开关电路 2.主要特点 开关速度快 通态电阻小,输入电容小 3

See also transistors datasheet: 2N6092 , 2N6093 , 2N6094 , 2N6095 , 2N6096 , 2N6097 , 2N6098 , 2N6099 , BF199 , 2N60B , 2N60C , 2N61 , 2N610 , 2N6100 , 2N6101 , 2N6102 , 2N6103 .

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