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2N60C Transistor (IC) Datasheet. Cross Reference Search. 2N60C Equivalent

Type Designator: 2N60C

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.18

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V:

Maximum emitter-base voltage |Ueb|, V: 10

Maximum collector current |Ic max|, A: 0.2

Maksimalna temperatura (Tj), °C: 85

Transition frequency (ft), MHz: 0.6

Collector capacitance (Cc), pF: 80

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of 2N60C transistor: TO5

2N60C Transistor Equivalent Substitute - Cross-Reference Search

2N60C PDF:

1.1. fqp12n60c_fqpf12n60c .pdf Size:1170K _fairchild_semi

2N60C
2N60C

September 2007 QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description 12A, 600V, RDS(on) = 0.65? @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 48 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 21pF) This advanced technology has been especially tailored to

1.2. fqp12n60c.pdf Size:1701K _fairchild_semi

2N60C
2N60C

March 2014 FQP12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description Features These N-Channel enhancement mode power field effect • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has • Low Gate Charge (Typ. 48 nC) been especially tailored to

1.3. hgtg12n60c3d.pdf Size:120K _fairchild_semi

2N60C
2N60C

HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 24A, 600V at TC = 25oC The HGTG12N60C3D is a MOS gated high voltage switching Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oC device combining the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device has the high i

1.4. hgtp12n60c3_hgt1s12n60c3.pdf Size:169K _fairchild_semi

2N60C
2N60C

HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated 24A, 600V at TC = 25oC high voltage switching devices combining the best features 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 15

1.5. fqp2n60c_fqpf2n60c.pdf Size:1366K _fairchild_semi

2N60C
2N60C

April 2006 QFET FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect rDS(on) = 4.7? @ VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge (typical 8.5 nC) planar stripe, DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailored to Fa

1.6. fqd2n60ctm.pdf Size:557K _fairchild_semi

2N60C
2N60C

November 2013 FQD2N60C / FQU2N60C N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω Features Description • 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, This N-Channel enhancement mode power MOSFET is ID = 0.95 A produced using Fairchild Semiconductor’s proprietary • Low Gate Charge (Typ. 8.5 nC) planar stripe and DMOS technology. This advanced • Low Crss (Typ. 4.3 pF)

1.7. fqd2n60c_fqu2n60c.pdf Size:762K _fairchild_semi

2N60C
2N60C

January 2009 QFET FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description 1.9A, 600V, RDS(on) = 4.7? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 8.5 nC) DMOS technology. Low Crss (typical 4.3 pF) This advanced technology has been especially tailored to mini-

1.8. hgtp12n60c3d_hgt1s12n60c3d.pdf Size:151K _fairchild_semi

2N60C
2N60C

HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar Short Circuit Rating transistors. The device ha

1.9. fqpf12n60c.pdf Size:1123K _fairchild_semi

2N60C
2N60C

November 2013 FQPF12N60C N-Channel QFET® MOSFET 600 V, 12 A, 650 mΩ Description Features These N-Channel enhancement mode power field effect • 12 A, 600 V, RDS(on) = 650 mΩ (Max.) @ VGS = 10 V, transistors are produced using Fairchild’s proprietary, planar ID = 6 A stripe, DMOS technology. This advanced technology has • Low Gate Charge (Typ. 48 nC) been especially tailored

1.10. spp02n60c3_rev.2.7.pdf Size:456K _infineon

2N60C
2N60C

P VDS Tjmax ? G G

1.11. spd02n60c3_spu02n60c3.pdf Size:1013K _infineon

2N60C
2N60C

VDS Tjmax ? G G G G

1.12. sps02n60c3_rev22.pdf Size:1186K _infineon

2N60C
2N60C

S VDS Tjmax ? G 1-3-11 S G -3-11

1.13. spb02n60c3_rev.2.4.pdf Size:545K _infineon

2N60C
2N60C

VDS Tjmax ? G G

1.14. ixgn72n60c3h1.pdf Size:223K _ixys

2N60C
2N60C

GenX3TM 600V IGBT VCES = 600V IXGN72N60C3H1 with Diode IC110 = 52A ? VCE(sat) ? ?? 2.50V ? ? tfi(typ) = 55ns High-Speed Low-Vsat PT IGBTs 40-100 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25C to 150C 600 V G VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V VGEM Transient 30 V E IC25 TC = 25C 78 A C IC110

1.15. ixgx72n60c3h1.pdf Size:213K _ixys

2N60C
2N60C

VCES = 600V GenX3TM 600V IGBT IXGX72N60C3H1 IC110 = 72A with Diode ? VCE(sat) ? ?? 2.5V ? ? tfi(typ) = 55ns High-Speed PT IGBT for 40-100kHz Switching PLUS247 Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V G G D VGES Continuous 20 V C ES Tab VGEM Transient 30 V IC25 TC = 25C (Limited by Leads) 75 A G = Gate C

1.16. ixgh72n60c3.pdf Size:166K _ixys

2N60C
2N60C

VCES = 600V GenX3TM 600V IGBT IXGH72N60C3 IC110 = 72A ? ? VCE(sat) ? 2.5V ? ? tfi (typ) = 55ns High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V G VGEM Transient 30 V C Tab E IC25 TC = 25C (Limited by Leads) 75 A IC110 TC = 110C (Chip

1.17. ixgr72n60c3d1.pdf Size:214K _ixys

2N60C
2N60C

TM VCES = 600V GenX3 600V IGBT IXGR72N60C3D1 IC110 = 35A with Diode ? VCE(sat) ? ?? 2.7V ? ? High-Speed Low-Vsat PT IGBT tfi(typ) = 55ns 40-100 kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C, RGE = 1M? 600 V VGES Continuous 20 V G VGEM Transient 30 V C Isolated Tab E IC25 TC = 25C (Limited by Leads)

1.18. ixgr32n60cd1.pdf Size:571K _ixys

2N60C
2N60C

VCES = 600 V HiPerFASTTM IGBT IXGR 32N60CD1 IC25 = 45 A with Diode VCE(SAT) = 2.7 V ISOPLUS247TM tfi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V VGEM Transient 30 V G C IC25 TC = 25C45 A E Is

1.19. hgtg12n60c3d.pdf Size:106K _harris_semi

2N60C
2N60C

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package 24A, 600V at TC = +25oC JEDEC STYLE TO-247 Typical Fall Time - 210ns at TJ = +150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high voltage switching device

1.20. hgtp12n60c3.pdf Size:188K _harris_semi

2N60C
2N60C

HGTP12N60C3, HGT1S12N60C3, S E M I C O N D U C T O R HGT1S12N60C3S August 1995 24A, 600V, UFS Series N-Channel IGBT Features Packages JEDEC TO-220AB EMITTER 24A, 600V at TC = +25oC COLLECTOR GATE 600V Switching SOA Capability Typical Fall Time - 230ns at TJ = +150oC COLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss JEDEC TO-262AA Description EMITTER COLLECTOR

1.21. hgtg12n60c3d_.pdf Size:102K _harris_semi

2N60C
2N60C

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package 24A, 600V at TC = 25oC JEDEC STYLE TO-247 Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC E C Short Circuit Rating G Low Conduction Loss Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high

1.22. sif12n60c.pdf Size:293K _sisemi

2N60C
2N60C

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF12N60C N- MOS 管/ N-CHANNEL POWER MOSFET SIF12N60C

1.23. sif2n60c_1.pdf Size:368K _sisemi

2N60C
2N60C

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N- MOS / N-CHANNEL POWER MOSFET SIF2N60C N- MOS / N-CHANNEL POWER MOSFET SIF2N60C N- MOS / N-CHANN

1.24. sif2n60c.pdf Size:333K _sisemi

2N60C
2N60C

深圳深爱半导体股份有限公司 产品规格书 Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification Shenzhen SI Semiconductors Co., LTD. Product Specification N-沟道功率 MOS / N-CHANNEL POWER MOSFET SIF2N60C N- MOS 管/ N-CHANNEL POWER MOSFET SIF2N60C N

1.25. ftd02n60c_ftu02n60c.pdf Size:254K _inpower_semi

2N60C
2N60C

FTD02N60C FTU02N60C N-Channel MOSFET Pb Lead Free Package and Finish Applications: VDSS RDS(ON) (Max.) ID • Adaptor • TV Main Power 600 V 4.4Ω 2 A • SMPS Power Supply • LCD Panel Power D Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve G G G Ordering Information DS DS TO-251 TO-252 S PART NUMBER PAC

1.26. ftp02n60c_fta02n60c.pdf Size:237K _inpower_semi

2N60C
2N60C

FTP02N60C FTA02N60C N-Channel MOSFET Pb Lead Free Package and Finish Applications: VDSS RDS(ON) (Max.) ID • Adaptor • TV Main Power 600 V 4.4Ω 2 A • SMPS Power Supply • LCD Panel Power D Features: • RoHS Compliant • Low ON Resistance • Low Gate Charge • Peak Current vs Pulse Width Curve G G G Ordering Information DS DS TO-220F TO-220 S PART NUMBER PA

1.27. cm2n60c_to251.pdf Size:143K _jdsemi

2N60C
2N60C

R CM2N60C 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 使用及贮存时需防静电 ◆符合 RoHS 等

1.28. cm2n60c.pdf Size:122K _jdsemi

2N60C
2N60C

R CM2N60C 深圳市晶导电子有限公司 www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. POWER MOSFET ◆600V N-Channel VDMOS ◆使用及贮存时需防静电 ◆符合 RoHS 等环保指令要求 1.主要用途 2 主要用于充电器、LD驱动、P 辅助 E C 电源等各类功率开关电路 1 2 2.主要特点 开关速度快 通态电阻小,输入电

See also transistors datasheet: 2N6094 , 2N6095 , 2N6096 , 2N6097 , 2N6098 , 2N6099 , 2N60A , 2N60B , 2N2222 , 2N61 , 2N610 , 2N6100 , 2N6101 , 2N6102 , 2N6103 , 2N6104 , 2N6105 .

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