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2N60C Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N60C

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.18

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 10

Maximum collector current |Ic max|, A: 0.2

Maximum junction temperature (Tj), °C: 85

Transition frequency (ft), MHz: 0.6

Collector capacitance (Cc), pF: 80

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of 2N60C transistor: TO5

2N60C Equivalent Transistors - Cross-Reference Search

2N60C PDF document for downloads:

1.1. fqp2n60c_fqpf2n60c.pdf Size:1366K _fairchild_semi

April 2006 ® QFET FQP2N60C/FQPF2N60C 2.0A, 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • rDS(on) = 4.7? @ VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge (typical 8.5 nC) planar stripe, DMOS technology. • Low Crss (typical 4.3 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D G TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter FQP2N60C FQPF2N60C Units VDSS Drain-Source Voltage 600 V ID Drain Cu

1.2. fqpf12n60c.pdf Size:873K _fairchild_semi

TM QFET FQP12N60C/FQPF12N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12A, 600V, RDS(on) = 0.65? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 48 nC) planar stripe, DMOS technology. • Low Crss ( typical 21 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? TO-220 TO-220F G D S G D S FQP Series FQPF Series S Absolute Maximum Ratings TC = 25°C un

1.3. fqp12n60c_fqpf12n60c .pdf Size:1170K _fairchild_semi

September 2007 ® QFET FQP12N60C / FQPF12N60C 600V N-Channel MOSFET Features Description • 12A, 600V, RDS(on) = 0.65? @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge ( typical 48 nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss ( typical 21pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the avalanche • Improved dv/dt capability and commutation mode. These devices are well suited for high • RoHS compliant efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. D G GD TO-220 S TO-220F FQP Series G D S FQPF Series S Absolute Maximum Ratings Symbol Parameter FQP12N60C FQPF12N60C Unit VDSS Drain-Source Voltage 600 V ID Drain Current - Continu

1.4. fqd2n60c_fqu2n60c.pdf Size:762K _fairchild_semi

January 2009 QFET® FQD2N60C/FQU2N60C 600V N-Channel MOSFET Features Description • 1.9A, 600V, RDS(on) = 4.7? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge (typical 8.5 nC) DMOS technology. • Low Crss (typical 4.3 pF) This advanced technology has been especially tailored to mini- • Fast switching mize on-state resistance, provide superior switching perfor- mance, and withstand high energy pulse in the avalanche and • 100% avalanche tested commutation mode. These devices are well suited for high effi- • Improved dv/dt capability ciency switched mode power supplies, active power factor cor- rection, electronic lamp ballasts based on half bridge topology. • RoHS Compliant D D ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ^ ^ ^ ^ ^ ^ ^ ^ ? ? ? ? ? ? ? ? G ? ? ? ? ? ? ? ? D-PAK I-PAK G S G D S FQD Series FQU Series S Absolute Maxi

1.5. hgtp12n60c3d_hgt1s12n60c3d.pdf Size:151K _fairchild_semi

HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes • 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices • Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar • Short Circuit Rating transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar • Low Conduction Loss transistor. The much lower on-state voltage drop varies only • Hyperfast Anti-Parallel Diode moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel Packaging with the IGBT is the development type TA49188. JEDEC TO-220AB The IGBT is ideal for many high voltage switching E C applications operating at moderate frequencies where low G conduction losses are essential. COLLECTOR (FLANGE) Formerly Developme

1.6. hgtg12n60c3d.pdf Size:120K _fairchild_semi

HGTG12N60C3D Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode • 24A, 600V at TC = 25oC The HGTG12N60C3D is a MOS gated high voltage switching • Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150oC device combining the best features of MOSFETs and bipolar • Short Circuit Rating transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar • Low Conduction Loss transistor. The much lower on-state voltage drop varies only • Hyperfast Anti-Parallel Diode moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti parallel Packaging with the IGBT is the development type TA49061. JEDEC STYLE TO-247 The IGBT is ideal for many high voltage switching E applications operating at moderate frequencies where low C G conduction losses are essential. Formerly Developmental Type TA49117. Ordering In

1.7. hgtp12n60c3_hgt1s12n60c3.pdf Size:169K _fairchild_semi

HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated • 24A, 600V at TC = 25oC high voltage switching devices combining the best features • 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the • Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 150oC high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower • Short Circuit Rating on-state voltage drop varies only moderately between 25oC • Low Conduction Loss and 150oC. The IGBT is ideal for many high voltage switching Packaging applications operating at moderate frequencies where low JEDEC TO-220AB conduction losses are essential, such as: AC and DC motor EMITTER controls, power supplies and drivers for solenoids, relays COLLECTOR and contactors. GATE Formerly Developmental Type TA49123. COLLECTOR (FLANGE) Or

1.8. spd02n60c3_spu02n60c3.pdf Size:1013K _infineon

VDS Tjmax ? • • G G • • • G G TC TC tp Tjmax VDD EAR Tjmax VDD Tjmax Gate source voltage static VGS VGS ± Ptot 5) Reverse diode dv/dt dv/dt 15 V/ns Rev. 2.5 P 8 04-07

1.9. spp02n60c3_rev.2.7.pdf Size:456K _infineon

P VDS Tjmax ? • • G • • • G TC TC tp Tjmax VDD EAR Tjmax VDD Tjmax Gate source voltage static VGS VGS ± Ptot 6) Reverse diode dv/dt dv/dt 15 V/ns Rev. 2.7 2009-11-26  P

1.10. sps02n60c3_rev22.pdf Size:1186K _infineon

S VDS Tjmax ? • • G 1-3-11 • • • S G -3-11 TC TC tp Tjmax VDD EAR Tjmax VDD Tjmax Gate source voltage static VGS VGS ± Ptot 5) Reverse diode dv/dt dv/dt 15 V/ns Rev. 2.2 P 9 07-07  S

1.11. spb02n60c3_rev.2.4.pdf Size:545K _infineon

VDS Tjmax ? • • G • • • G TC TC tp Tjmax VDD EAR Tjmax VDD Tjmax Gate source voltage static VGS VGS ± Ptot 6) Reverse diode dv/dt dv/dt 15 V/ns Rev. 2.4 P 7 02-14

1.12. ixgx72n60c3h1.pdf Size:213K _ixys

VCES = 600V GenX3TM 600V IGBT IXGX72N60C3H1 IC110 = 72A with Diode ? VCE(sat) ? ?? 2.5V ? ? tfi(typ) = 55ns High-Speed PT IGBT for 40-100kHz Switching PLUS247 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1M? 600 V G G D VGES Continuous ±20 V C ES Tab VGEM Transient ±30 V IC25 TC = 25°C (Limited by Leads) 75 A G = Gate C = Collector IC110 TC = 110°C (Chip Capability) 72 A E = Emitter Tab = Collector ICM TC = 25°C, 1ms 360 A IA TC = 25°C 50 A EAS TC = 25°C 500 mJ Features SSOA VGE = 15V, TVJ = 125°C, RG = 2? ICM = 150 A (RBSOA) Clamped Inductive Load VCE ? VCES Optimized for Low Switching Losses Square RBSOA PC TC = 25°C 540 W Avalanche Rated TJ -55 ... +150 °C Anti-Parallel Ultra Fast Diode TJM 150 °C International Standard Package Tstg -55 ... +150 °C MF Mounting Force 20..120 / 4.5..27 N/lb. Advantages TL Maximum Lead Temperature for Soldering 300 °C High Power Density

1.13. ixgr32n60cd1.pdf Size:571K _ixys

VCES = 600 V HiPerFASTTM IGBT IXGR 32N60CD1 IC25 = 45 A with Diode VCE(SAT) = 2.7 V ISOPLUS247TM tfi(typ) = 55 ns (Electrically Isolated Backside) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM (IXGR) E 153432 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 600 V VGES Continuous ±20 V VGEM Transient ±30 V G C IC25 TC = 25°C45 A E Isolated backside* IC90 TC = 90°C28 A ICM TC = 25°C, 1 ms 120 A SSOA VGE = 15 V, TVJ = 125°C, RG = 10 ? ICM = 64 A G = Gate, C = Collector, (RBSOA) Clamped inductive load, L = 100 µH @ 0.8 VCES E = Emitter, TAB = Collector PC TC = 25°C 140 W TJ -55 ... +150 °C * Patent pending TJM 150 °C Features Tstg -55 ... +150 °C Maximum Lead and Tab temperature for soldering 300 °C DCB Isolated mounting tab 1.6 mm (0.062 in.) from case for 10 s Meets TO-247AD package Outline High current handling capability VISOL 50/60 Hz, RMS t = 1 min leads-to housing 2500 V~ Latest generation

1.14. ixgr72n60c3d1.pdf Size:214K _ixys

TM VCES = 600V GenX3 600V IGBT IXGR72N60C3D1 IC110 = 35A with Diode ? VCE(sat) ? ?? 2.7V ? ? High-Speed Low-Vsat PT IGBT tfi(typ) = 55ns 40-100 kHz Switching Symbol Test Conditions Maximum Ratings ISOPLUS 247TM VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1M? 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C Isolated Tab E IC25 TC = 25°C (Limited by Leads) 75 A IC110 TC = 110°C35 A G = Gate C = Collector IF110 TC = 110°C36 A E = Emitter ICM TC = 25°C, 1ms 400 A IA TC = 25°C50 A Features EAS TC = 25°C 500 mJ SSOA VGE = 15V, TVJ = 125°C, RG = 2? ICM = 150 A Silicon Chip on Direct-Copper Bond (DCB) Substrate (RBSOA) Clamped Inductive Load VCE ? VCES Optimized for Low Switching Losses PC TC = 25°C 200 W Square RBSOA Isolated Mounting Surface TJ -55 ... +150 °C Anti-Parallel Ultra Fast Diode TJM 150 °C Avalanche Rated Tstg -55 ... +150 °C 2500V Electrical Isolation VISOL 50/60 Hz, RMS, t = 1Minute 2500 V~

1.15. ixgn72n60c3h1.pdf Size:223K _ixys

GenX3TM 600V IGBT VCES = 600V IXGN72N60C3H1 with Diode IC110 = 52A ? VCE(sat) ? ?? 2.50V ? ? tfi(typ) = 55ns High-Speed Low-Vsat PT IGBTs 40-100 kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C, RGE = 1M? 600 V VGES Continuous ±20 V VGEM Transient ±30 V E IC25 TC = 25°C 78 A C IC110 TC = 110°C 52 A G = Gate, C = Collector, E = Emitter ICM TC = 25°C, 1ms 360 A either emitter terminal can be used as IA TC = 25°C50 A Main or Kelvin Emitter EAS TC = 25°C 500 mJ SSOA VGE= 15V, TVJ = 125°C, RG = 2? ICM = 150 A Features (RBSOA) Clamped Inductive Load @ VCE ? VCES PC TC = 25°C 360 W Optimized for Low Switching Losses Square RBSOA TJ -55 ... +150 °C Aluminium Nitride Isolation TJM 150 °C - High Power Dissipation Tstg -55 ... +150 °C Isolation Voltage 3000V~ Avalanche Rated VISOL 50/60Hz t = 1min 2500 V~ Anti-Parallel Ultra Fast Diode IISOL

1.16. ixgh72n60c3.pdf Size:166K _ixys

VCES = 600V GenX3TM 600V IGBT IXGH72N60C3 IC110 = 72A ? ? VCE(sat) ? 2.5V ? ? tfi (typ) = 55ns High-Speed PT IGBT for 40-100kHz Switching Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1M? 600 V VGES Continuous ±20 V G VGEM Transient ±30 V C Tab E IC25 TC = 25°C (Limited by Leads) 75 A IC110 TC = 110°C (Chip Capability) 72 A ICM TC = 25°C, 1ms 360 A G = Gate C = Collector E = Emitter Tab = Collector IA TC = 25°C 50 A EAS TC = 25°C 500 mJ SSOA VGE= 15V, TVJ = 125°C, RG = 2? ICM = 150 A (RBSOA) Clamped Inductive Load VCE ? VCES Features PC TC = 25°C 540 W Optimized for Low Switching Losses TJ -55 ... +150 °C Square RBSOA TJM 150 °C Avalanche Rated Tstg -55 ... +150 °C International Standard Package TL Maximum Lead Temperature for Soldering 300 °C TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C Advantages Md Mounting Torque 1.13/10 Nm/lb.in. Weight 6g High Power

1.17. hgtp12n60c3.pdf Size:188K _harris_semi

HGTP12N60C3, HGT1S12N60C3, S E M I C O N D U C T O R HGT1S12N60C3S August 1995 24A, 600V, UFS Series N-Channel IGBT Features Packages JEDEC TO-220AB EMITTER • 24A, 600V at TC = +25oC COLLECTOR GATE • 600V Switching SOA Capability • Typical Fall Time - 230ns at TJ = +150oC COLLECTOR (FLANGE) • Short Circuit Rating • Low Conduction Loss JEDEC TO-262AA Description EMITTER COLLECTOR The HGTP12N60C3, HGT1S12N60C3 and HGT1S12N60C3S GATE COLLECTOR are MOS gated high voltage switching devices combining the (FLANGE) best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. JEDEC TO-263AB The IGBT is ideal for many high voltage switching applications M A operating at moderate frequencies where low conduction losses COLLECTOR are essential, such as: AC and DC motor contro

1.18. hgtg12n60c3d_.pdf Size:102K _harris_semi

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode January 1997 Features Package • 24A, 600V at TC = 25oC JEDEC STYLE TO-247 • Typical Fall Time . . . . . . . . . . . . . . 210ns at TJ = 150oC E C • Short Circuit Rating G • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOS- FET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development Terminal Diagram type TA49123. The diode used in antiparallel with the IGBT is the development type TA49061. N-CHANNEL ENHANCEMENT MODE The IGBT is ideal for many high voltage switching applications C operating at moderate frequencies where low conduction losses are

1.19. hgtg12n60c3d.pdf Size:106K _harris_semi

S E M I C O N D U C T O R HGTG12N60C3D 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode August 1995 Features Package • 24A, 600V at TC = +25oC JEDEC STYLE TO-247 • Typical Fall Time - 210ns at TJ = +150oC E C • Short Circuit Rating G • Low Conduction Loss • Hyperfast Anti-Parallel Diode Description The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOS- FET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBT used is the develop- Terminal Diagram ment type TA49123. The diode used in antiparallel with the IGBT is the development type TA49061. N-CHANNEL ENHANCEMENT MODE The IGBT is ideal for many high voltage switching applications C operating at moderate frequencies where low conduction losses are essential. PACKAGIN

See also transistors datasheet: 2N6094 , 2N6095 , 2N6096 , 2N6097 , 2N6098 , 2N6099 , 2N60A , 2N60B , 2N3055 , 2N61 , 2N610 , 2N6100 , 2N6101 , 2N6102 , 2N6103 , 2N6104 , 2N6105 .

Keywords