All Transistors. 2N61 Datasheet

 

2N61 Transistor. Datasheet pdf. Equivalent

Type Designator: 2N61

Material of Transistor: Ge

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.18 W

Maximum Collector-Base Voltage |Vcb|: 25 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 85 °C

Transition Frequency (ft): 0.4 MHz

Collector Capacitance (Cc): 80 pF

Forward Current Transfer Ratio (hFE), MIN: 45

Noise Figure, dB: -

Package: TO5

2N61 Transistor Equivalent Substitute - Cross-Reference Search

2N61 Datasheet PDF:

1.1. 2n6107_2n6111_2n6288_2n6109_2n6292.pdf Size:149K _motorola

2N61
2N61

Order this document MOTOROLA by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 (See 2N6050) Complementary Silicon Plastic PNP Power Transistors 2N6107 . . . designed for use in generalpurpose amplifier and switching applications. 2N6109* DC Current Gain Specified to 7.0 Amperes hFE = 30150 @ IC = 3.0 Adc 2N6111, 2N6288 hFE = 2.3 (Min) @ IC = 7.0 Adc All Devices 2N61

1.2. 2n6107_2n6111.pdf Size:48K _st

2N61
2N61

2N6107 2N6111 SILICON PNP SWITCHING TRANSISTORS STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTORS APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 3 2 1 DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNP TO-220 silicon transistors in Jedec TO-220 plastic package. They are intended for a wide variety of medium power switching and linear applications. I

1.3. 2n6111.pdf Size:56K _st

2N61
2N61

2N6111 SILICON PNP SWITCHING TRANSISTOR STMicroelectronics PREFERRED SALESTYPE PNP TRANSISTOR APPLICATIONS: LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION 3 2 The 2N6111 is an Epitaxial-Base PNP silicon 1 transistor in Jedec TO-220 plastic package. It is intended for a wide variety of medium power TO-220 switching and linear applications. INTERNAL SCHEMATIC DIAGRAM

1.4. 2n6121_2n6122_2n6123_2n6124_2n6125_2n6126.pdf Size:83K _central

2N61

TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com

1.5. 2n6107_2n6109_2n6111_2n6288_2n6290_2n6292.pdf Size:70K _central

2N61

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.6. 2n6190_2n6191_2n6192_2n6193.pdf Size:97K _central

2N61
2N61

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824

1.7. 2n6107_2n6109_2n6111_2n6288_2n6292.pdf Size:90K _onsemi

2N61
2N61

PNP - 2N6107, 2N6109, 2N6111; NPN - 2N6288, 2N6292 2N6109 and 2N6292 are Preferred Devices Complementary Silicon Plastic Power Transistors http://onsemi.com These devices are designed for use in general-purpose amplifier and switching applications. 7 AMPERE Features POWER TRANSISTORS DC Current Gain Specified to 7.0 Amperes hFE = 30-150 @ IC COMPLEMENTARY SILICON = 3.0 Adc - 2N611

1.8. 2n6121-26.pdf Size:190K _mospec

2N61
2N61

A A A A

1.9. 2n6166.pdf Size:15K _advanced-semi

2N61

2N6166 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L FLG The ASI 2N6166 is Designed to operate in a collector modulated VHF .112x45 L Power Amplifier Applications up to 200 A MHz. E O.125 NOM. C FULL R C FEATURES: B E B ?C = 60 % min. @ 100 W/150 MHz E D PG = 6.0 dB min. @ 100 W/150 MHz F G H Omnigold Metalization System K J I

1.10. 2n6199.pdf Size:14K _advanced-semi

2N61

2N6199 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380" 4L STUD The ASI 2N6199 is Designed for VHF .112x45 A Class C Power Amplifier Applications C up to 250 MHz. B E E FEATURES: OC B PG = 10 dB Typical at 25 W/175 MHz I ? Load VSWR at Rated Conditions D ? ? ? H J Omnigold Metallization System G #8-32 UNC-2A F E MAXIMUM RATINGS MINIM

1.11. 2n6106_2n6107_2n6108_2n6109_2n6110_2n6111_2n6288_2n6289_2n6290_2n6291_2n6292_2n6293_2n6473_2n6474_2n6475_2n6476.pdf Size:101K _bocasemi

2N61
2N61

Boca Semiconductor Corp. BSC http://www.bocasemi.com http://www.bocasemi.com

1.12. 2n6109.pdf Size:249K _cdil

2N61
2N61

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6109 2N6109 PNP PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Application PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. E B F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1.40 1 2 3 F 3.75 3.8

1.13. 2n6107_2n6292.pdf Size:95K _cdil

2N61
2N61

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PLASTIC POWER TRANSISTORS 2N6107 PNP 2N6292 NPN TO-220 Plastic Package General Purpose Amplifier and Switching Applications ABSOLUTE MAXIMUM RATINGS (Ta=25?C) DESCRIPTION SYMBOL VALUE UNIT VCBO Collector Base Voltage 80 V Collector Emitter Voltage VCEO 70 V Collector Emitter Voltage (RBE= 100 ) V

1.14. 2n6111.pdf Size:188K _cdil

2N61
2N61

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6111 2N6111 PNP PLASTIC POWER TRANSISTOR General Purpose Amplifier and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. E B F A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D0.90 E 1.15 1.40 1 2 3 F 3.75 3.

1.15. 2n6101.pdf Size:315K _cdil

2N61
2N61

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6101 2N6101 NPN PLASTIC POWER TRANSISTOR Medium Power Linear and Switching Service in Consumer, Automotive, and Industrial Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM MIN. MAX. B E F A 14.42 16.51 B 9.63 10.67 C 3.56

1.16. 2n6121-26.pdf Size:263K _cdil

2N61
2N61

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package 2N6121, 2N6122, 2N6123 2N6124, 2N6125, 2N6126 2N6121, 6122, 6123 NPN PLASTIC POWER TRANSISTORS 2N6124, 6125, 6126 PNP PLASTIC POWER TRANSISTORS Medium Power Linear and Switching Applications PIN CONFIGURATION 4 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 1 2 3 C DIM M

1.17. 2n6129_2n6130_2n6131.pdf Size:104K _jmnic

2N61
2N61

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION ·With TO-220 package ·High power dissipation ·Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS ·Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum rati

1.18. 2n6098_2n6099_2n6100_2n6101.pdf Size:106K _jmnic

2N61
2N61

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION · ·With TO-220 package APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6098

1.19. 2n6102_2n6103.pdf Size:99K _jmnic

2N61
2N61

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6102 2N6103 DESCRIPTION ·With TO-220 package ·2N6102 with short pin APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT

1.20. 2n6132_2n6133_2n6134.pdf Size:104K _jmnic

2N61
2N61

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION ·With TO-220 package ·High power dissipation ·Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS ·Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratin

1.21. 2n6193.pdf Size:31K _semicoa

2N61

Data Sheet No. 2C6193 Generic Packaged Parts: Chip Type 2C6193 Geometry 9700 2N6190, 2N6191, 2N6192, Polarity PNP 2N6193 Chip type 2C6193 by Semicoa Semi- Product Summary: conductors provides performance APPLICATIONS: similar to these devices. Designed for medium power switching and wide band applications. Part Numbers: 2N6190, 2N6191, 2N6192, 2N6193 Features: Medium power ratings

1.22. 2n6137.pdf Size:137K _unitrode

2N61
2N61

1.23. 2n6109.pdf Size:188K _inchange_semiconductor

2N61
2N61

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N6109 DESCRIPTION ·DC Current Gain: hFE = 30-150@ IC= -2.5A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -50V(Min) APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC TJ Tstg PARAMETER Collector

1.24. 2n6106_2n6108_2n6110.pdf Size:121K _inchange_semiconductor

2N61
2N61

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6106 2N6108 2N6110 DESCRIPTION Ў¤ With TO-220 package Ў¤ With short pin APPLICATIONS Ў¤ Power amplifier and switching circuits applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25Ўж )

1.25. 2n6124_2n6125_2n6126.pdf Size:120K _inchange_semiconductor

2N61
2N61

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to PNP type : 2N6121 ;2N6122 ;2N6123 APPLICATIONS Ў¤ For use in power amplifier and switching circuit applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N6124 2N6125 2N6126 Fig.1 simplified outline (TO-220) and sy

1.26. 2n6107.pdf Size:188K _inchange_semiconductor

2N61
2N61

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N6107 DESCRIPTION ·DC Current Gain: hFE = 30-150@ IC= -2A ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= -70V(Min) ·Complement to Type 2N6292 APPLICATIONS ·Designed for use in general-purpose amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PC T

1.27. 2n6129_2n6130_2n6131.pdf Size:120K _inchange_semiconductor

2N61
2N61

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ High power dissipation Ў¤ Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS Ў¤ Power amplifier and medium speed switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6129 2N6130 2N6131 Absolute maximum rat

1.28. 2n6098_2n6099_2n6100_2n6101.pdf Size:119K _inchange_semiconductor

2N61
2N61

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6098 2N6099 2N6100 2N6101 DESCRIPTION Ў¤ With TO-220 package Ў¤ High current capability APPLICATIONS Ў¤ For use in general-purpose amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25Ўж ) SYMBOL PARAMETE

1.29. 2n6102_2n6103.pdf Size:57K _inchange_semiconductor

2N61
2N61

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6102 2N6103 DESCRIPTION ·With TO-220 package ·2N6102 type with short pin APPLICATIONS ·For use in general-purpose amplifier and switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIO

1.30. 2n6132_2n6133_2n6134.pdf Size:119K _inchange_semiconductor

2N61
2N61

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ High power dissipation Ў¤ Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS Ў¤ Power amplifier and medium speed switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N6132 2N6133 2N6134 Fig.1 simplified out

1.31. 2n6107_2n6109_2n6111.pdf Size:121K _inchange_semiconductor

2N61
2N61

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS Ў¤ Power amplifier and switching circuits applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base 2N6107 2N6109 2N6111 Fig.1 simplified outline (TO-220) and symbol Abs

1.32. 2n6121_2n6122_2n6123.pdf Size:120K _inchange_semiconductor

2N61
2N61

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to PNP type : 2N6124 ;2N6125 ;2N6126 APPLICATIONS Ў¤ For use in power amplifier and switching circuit applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2N6121 2N6122 2N6123 Absolute maximum ratings(Ta=25Ўж ) SY

1.33. 2n6193u3.pdf Size:235K _aeroflex

2N61
2N61

NPN Power Silicon Transistors 2N6193U3 Features • JANS and JANSR Qualified to MIL-PRF-19500/561 • JEDEC resistered 2N6193 • Lightweight & Low Power • Ideal for Space, Military and Other High Reliability Applications • Surface mount U3 (TO-276AA) Package Maximum Ratings Ratings Symbol Value Units Collector - Emitter Voltage VCEO 100 Vdc Collector - Base Voltage VCBO 100 Vdc

1.34. 2n6193.pdf Size:153K _aeroflex

2N61
2N61

PNP Power Silicon Transistor 2N6193 Features • Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/561 • TO-39 (TO-205AD) Package Maximum Ratings Ratings Symbol Value Units Collector - Emitter Voltage VCEO 100 Vdc Collector - Base Voltage VCBO 100 Vdc Emitter - Base Voltage VEBO 6.0 Vdc Collector Current IC 5.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TA =

Datasheet: 2N6095 , 2N6096 , 2N6097 , 2N6098 , 2N6099 , 2N60A , 2N60B , 2N60C , 2N3055 , 2N610 , 2N6100 , 2N6101 , 2N6102 , 2N6103 , 2N6104 , 2N6105 , 2N6106 .

 


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