2N6265 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N6265

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 6.25

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 0

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.275

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 2000

Collector capacitance (Cc), pF: 5

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of 2N6265 transistor: TO128

2N6265 Equivalent Transistors - Cross-Reference Search

2N6265 PDF document for downloads:

5.1. 2n6264.pdf Size:11K _semelab

2N6264 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 150V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 (TO213AA) PINOUTS 1 – Base 2 – Emitter Case – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 150 V IC(CONT) 3 A hFE @ (VCE / IC) 20 60 - ft 1M Hz PD 50 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of goi

5.2. 2n6260.pdf Size:11K _semelab

2N6260 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 40V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 (TO213AA) PINOUTS 1 – Base 2 – Emitter Case – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 40 V IC(CONT) 3 A hFE @ 4/1.5 (VCE / IC) 20 100 - ft 20M Hz PD 29 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time

5.3. 2n6262.pdf Size:11K _semelab

2N6262 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 150V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 150 V IC(CONT) 10 A hFE @ 2/3 (VCE / IC) 20 70 - ft Hz PD 150 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at

5.4. 2n6263.pdf Size:11K _semelab

2N6263 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO66 6.35 (0.250) Metal Package. 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 4.08(0.161) rad. Bipolar NPN Device. 1 2 VCEO = 120V IC = 3A All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO66 (TO213AA) PINOUTS 1 – Base 2 – Emitter Case – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 120 V IC(CONT) 3 A hFE @ 4/0.5 (VCE / IC) 20 100 - ft 2M Hz PD 20 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time

5.5. 2n6261.pdf Size:18K _semelab

2N6261 MECHANICAL DATA HOMETAXIAL-BASE Dimensions in mm(inches) MEDIUM POWER SILICON NPN TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. FEATURES • fT = 800 kHz at 0.2A • Maximum Safe-area of operation curves for dc and pulse operation. • VCEV(sus) = 90V min • Low Saturation Voltage: VCE(sat = 1.0V at IC = 0.5A) 1.27 (0.050) 4.83 (0.190) 1.91 (0.750) 5.33 (0.210) 9.14 (0.360) min. APPLICATIONS TO–66 • Power Switching Circuits PIN 1 — Base PIN 2 — Emitter Case is Collector. • Series and shunt-regulator driver and output stages • High-fidelity amplifers • Solenoid Drivers ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO Collector – Base Voltage 90V VCEO Collector – Emitter Voltage (with base open) 80V VCER(sus) External Base – Emitter (RBE) = 100 ) 85V VCEV(sus) Collector – Emitter Voltage (with base reverse biased) 90V VEBO Emitter to Base Voltage 7V IC Continuous Collector Current 4A

5.6. 2n6260.pdf Size:125K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ Low saturation voltage Ў¤ Wide safe operating area APPLICATIONS Ў¤ Power switching circuits Ў¤ High-fidelity amplifers Ў¤ Solenoid drivers Ў¤ Series and shunt-regulator driver and output stages PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6260 Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER CHA Fig.1 simplified outline (TO-66) and symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature IN NG S Open emitter Open base CON EMI CONDITIONS TOR DUC VALUE 50 40 7 4 2 UNIT V V V A A W Ўж Ўж Open collector TC=25Ўж 29 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 3.5 UNI

5.7. 2n6262.pdf Size:116K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6262 DESCRIPTION Ў¤ With TO-3 package Ў¤ Low collector saturation voltage Ў¤ Excellent safe operating area APPLICATIONS Ў¤ Designed for audio amplifier and switching circuits applications PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC PD Tj Tstg PARAMETER NG S A Collector-base voltage Open emitter Collector-emitter voltage Emitter-base voltage Collector current INCH Open base CON EMI CONDITIONS TOR DUC VALUE 170 150 5 10 UNIT V V V A W Ўж Ўж Open collector Total Power Dissipation Junction temperature Storage temperature TC=25Ўж 150 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.17 UNIT Ўж /W

5.8. 2n6263_2n6264.pdf Size:128K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ High breakdown voltage Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ A wide variety of medium-to-high power, high-voltage applications Ў¤ Series and shunt regulators Ў¤ High-fidelity amplifiers Ў¤ Power switching circuits Ў¤ Solenoid drivers PINNING (See Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2N6263 2N6264 Collector Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO PARAMETER Fig.1 simplified outline (TO-66) and symbol Collector-base voltage VCEO VEBO IC ICM IB PT Tj Tstg Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current IN ANG CH 2N6263 2N6264 SEM Open emitter CON I CONDITIONS TOR DUC VALUE 140 170 120 150 UNIT V 2N6263 Open base Open collector 2N6264 V 7 3 4 2 V A A A W 50 150 -65~200 Ўж Ўж 2N6263 Total power dissipation

5.9. 2n6261.pdf Size:125K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-66 package Ў¤ Low collector saturation voltage Ў¤ Wide safe operating area APPLICATIONS Ў¤ Power switching circuits Ў¤ Series and shunt-regulator driver and output stages Ў¤ High-fidelity amplifers Ў¤ Solenoid drivers PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6261 Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Fig.1 simplified outline (TO-66) and symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature IN ANG CH SEM Open emitter CON I CONDITIONS TOR DUC VALUE 90 80 7 4 2 UNIT V V V A A W Ўж Ўж Open base Open collector TC=25Ўж 50 150 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case M

See also transistors datasheet: 2N6258 , 2N6259 , 2N626 , 2N6260 , 2N6261 , 2N6262 , 2N6263 , 2N6264 , BC109 , 2N6266 , 2N6267 , 2N6268 , 2N6269 , 2N627 , 2N6270 , 2N6271 , 2N6272 .

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