2N6339 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N6339

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 200

Maximum collector-base voltage |Ucb|, V: 140

Maximum collector-emitter voltage |Uce|, V: 120

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 30

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 40

Collector capacitance (Cc), pF: 300

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of 2N6339 transistor: TO3

2N6339 Equivalent Transistors - Cross-Reference Search

2N6339 PDF document for downloads:

1.1. 2n6338_2n6339_2n6340_2n6341.pdf Size:155K _motorola

Order this document MOTOROLA by 2N6338/D SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon 2N6338 Transistors 2N6339 . . . designed for use in industrial–military power amplifier and switching circuit 2N6340 applications. • High Collector–Emitter Sustaining Voltage — 2N6341* VCEO(sus) = 100 Vdc (Min) — 2N6338 VCEO(sus) = 120 Vdc (Min) — 2N6339 *Motorola Preferred Device VCEO(sus) = 140 Vdc (Min) — 2N6340 VCEO(sus) = 150 Vdc (Min) — 2N6341 25 AMPERE • High DC Current Gain — POWER TRANSISTORS hFE = 30 – 120 @ IC = 10 Adc NPN SILICON hFE = 12 (Min) @ IC = 25 Adc 100, 120, 140, 150 VOLTS • Low Collector–Emitter Saturation Voltage — 200 WATTS VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc • Fast Switching Times @ IC = 10 Adc tr = 0.3 µs (Max) ts = 1.0 µs (Max) IIIIIIIIIIIIIIIIIIIIIII tf = 0.25 µs (Max) IIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III III III IIII IIII III • Complement to 2N6436–38 IIIIIIIIIIIIIIIIIIIIIII IIIIIIIII III III III IIIIIIIII III III III III

1.2. 2n6338_2n6339_2n6340_2n6341.pdf Size:128K _mospec

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5.1. 2n6338_2n6341.pdf Size:135K _onsemi

ON Semiconductort High-Power NPN Silicon 2N6338 Transistors 2N6341* . . . designed for use in industrial-military power amplifier and switching circuit applications. • High Collector-Emitter Sustaining Voltage - *ON Semiconductor Preferred Device VCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N6341 25 AMPERE • High DC Current Gain - POWER TRANSISTORS NPN SILICON hFE = 30 - 120 @ IC = 10 Adc 100, 120, 140, 150 VOLTS = 12 (Min) @ IC = 25 Adc 200 WATTS • Low Collector-Emitter Saturation Voltage - VCE(sat) = 1.0 Vdc (Max) @ IC = 10 Adc • Fast Switching Times @ IC = 10 Adc tr = 0.3 ms (Max) ts = 1.0 ms (Max) tf = 0.25 ms (Max) w These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at CASE 1-07 www.onsemi.com for specific Pb-free orderable part numbers, or TO-204AA contact your local ON Semiconductor sales office or representative. (TO-3) *MAXIMUM RATINGS IIIIII

5.2. 2n6338_6339_6340_6341.pdf Size:185K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6338/6339/6340/6341 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min)- 2N6338 = 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 ·High Switching Speed ·Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 10A APPLICATIONS ·Designed for use in industrial-military power amplifier and switching circuit applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT 2N6338 120 2N6339 140 V Collector-Base Voltage V CBO 2N6340 160 2N6341 180 2N6338 100 2N6339 120 V Collector-Emitter Voltage V CEO 2N6340 140 2N6341 150 VEBO Emitter-Base Voltage 7 V I Collector Current-Continuous 25 A C I Collector Current-Peak 50 A CM IB Base Current-Continuous 10 A P Collector Power Dissipation @T =25? 200 W C C T Junction Temperature 200 ? J Tstg Storage Temperature -65~200 ? THERMAL CHARACTERISTICS S

See also transistors datasheet: 2N6327 , 2N6328 , 2N6329 , 2N633 , 2N6330 , 2N6331 , 2N6338 , 2N6338A , BC148 , 2N6339A , 2N6339X , 2N634 , 2N6340 , 2N6340A , 2N6341 , 2N6341A , 2N6347 .

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