2N639 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N639

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 60

Maximum collector-base voltage |Ucb|, V: 40

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 90

Transition frequency (ft), MHz: 0.5

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 15

Noise Figure, dB: -

Package of 2N639 transistor: TO3

2N639 Equivalent Transistors - Cross-Reference Search

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See also transistors datasheet: 2N6384 , 2N6385 , 2N6386 , 2N6387 , 2N6388 , 2N6389 , 2N638A , 2N638B , TIP31C , 2N6390 , 2N6391 , 2N6392 , 2N6393 , 2N639A , 2N639B , 2N64 , 2N640 .

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