2N6443 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N6443

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.55

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.01

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 160

Collector capacitance (Cc), pF: 1.5

Forward current transfer ratio (hFE), min: 120

Noise Figure, dB: -

Package of 2N6443 transistor: TO77-1

2N6443 Equivalent Transistors - Cross-Reference Search

2N6443 PDF document for downloads:

5.1. 2n583_2n584_2n640_2n641_2n642_2n643_2n644_2n645_2n656_2n696.pdf Size:298K _rca

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5.2. 2n6449_2n6450.pdf Size:91K _interfet

Databook.fxp 1/13/99 2:09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25?C ? High Voltage 2N6449 2N6450 Reverse Gate Source Voltage – 300 V – 200 V Reverse Gate Drain Voltage – 300 V – 200 V Continuous Forward Gate Current 10 mA 10 mA Continuous Device Power Dissipation 800 mW 800 mW Power Derating 6.4 mW/°C 6.4 mW/°C At 25°C free air temperature: 2N6449 2N6450 Process NJ42 Static Electrical Characteristics Min Max Min Max Unit Test Conditions Gate Source Breakdown Voltage V(BR)GSS – 300 – 200 V IG = – 10 µA, VDS = OV – 100 nA VGS = – 150V, VDS = OV – 100 nA VGS = – 100V, VDS = OV Gate Reverse Current IGSS – 100 µA VGS = – 150V, VDS = OV TA = 150°C – 100 µA VGS = – 100V, VDS = OV TA = 150°C Gate Source Cutoff Voltage VGS(OFF) – 2 – 15 – 2 – 15 V VDS = 30V, ID = 4 nA Drain Saturation Current (Pulsed) IDSS 2 10 2 10 mA VDS = 30V, VGS = OV Dynamic Electrical Characteristics Common Source

See also transistors datasheet: 2N6437 , 2N6437A , 2N6438 , 2N6438A , 2N6439 , 2N644 , 2N6441 , 2N6442 , BD699 , 2N6444 , 2N6445 , 2N6446 , 2N6447 , 2N6448 , 2N645 , 2N6455 , 2N6456 .

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