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2N6514
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2N6514
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 120
Maximum collector-base voltage |Ucb|, V: 350
Maximum collector-emitter voltage |Uce|, V: 300
Maximum emitter-base voltage |Ueb|, V: 6
Maximum collector current |Ic max|, A: 7
Maximum junction temperature (Tj), °C: 200
Transition frequency (ft), MHz: 3
Collector capacitance (Cc), pF: 200
Forward current transfer ratio (hFE), min: 10
Noise Figure, dB: - Package of 2N6514
transistor: TO3
2N6514
Equivalent Transistors - Cross-Reference Search 2N6514
PDF document for downloads:
5.1. 2n6515_2n6517_2n6519_2n6520.pdf  Size:229K _motorola  |
 | MOTOROLA
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SEMICONDUCTOR TECHNICAL DATA
by 2N6515/D
High Voltage Transistors
NPN
COLLECTOR COLLECTOR
2N6515
3 3
2N6517
2 2
PNP
BASE BASE
NPN PNP
2N6519
1 1
EMITTER EMITTER
2N6520
MAXIMUM RATINGS
Voltage and current are negative
2N6517
for PNP transistors
2N6520
Rating Symbol 2N6515 2N6519 Unit
CollectorEmitter Voltage VCEO 250 300 350 Vdc
CollectorBase Voltage VCBO 250 300 350 Vdc
EmitterBase Voltage VEBO Vdc
2N6515, 2N6516, 2N6517 6.0
2N6519, 2N6520 5.0
Base Current IB 250 mAdc
Collector Current Continuous IC 500 mAdc
1
Total Device Dissipation PD 625 mW
2
3
@ TA = 25C 5.0 mW/C
Derate above 25C
CASE 2904, STYLE 1
Total Device Dissipation PD 1.5 Watts
TO92 (TO226AA)
@ TC = 25C 12 mW/C
Derate above 25C
Operating and Storage Junction TJ, Tstg 55 to +150 C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 C/W
Thermal Resistance, Junctio |
5.2. 2n6515_2n6516_2n6517_2n6519_2n6520.pdf Size:329K _motorola  |
 | MOTOROLA
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SEMICONDUCTOR TECHNICAL DATA
by 2N6515/D
High Voltage Transistors
NPN
2N6515
*
COLLECTOR COLLECTOR thru 2N6517
3 3
PNP
2 2
2N6519
BASE BASE
NPN PNP
2N6520
*
1 1
Voltage and current are negative
EMITTER EMITTER
for PNP transistors
MAXIMUM RATINGS
*Motorola Preferred Device
2N6516 2N6517
2N6519 2N6520
Rating Symbol 2N6515 Unit
CollectorEmitter Voltage VCEO 250 300 350 Vdc
CollectorBase Voltage VCBO 250 300 350 Vdc
EmitterBase Voltage VEBO Vdc
2N6515, 2N6516, 2N6517 6.0
2N6519, 2N6520 5.0
Base Current IB 250 mAdc
1
2
Collector Current Continuous IC 500 mAdc
3
Total Device Dissipation PD 625 mW
CASE 2904, STYLE 1
@ TA = 25C 5.0 mW/C
TO92 (TO226AA)
Derate above 25C
Total Device Dissipation PD 1.5 Watts
@ TC = 25C 12 mW/C
Derate above 25C
Operating and Storage Junction TJ, Tstg 55 to +150 C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambie |
5.3. 2n6518.pdf Size:26K _fairchild_semi  |
 | 2N6518
High Voltage Transistor
Collector-Emitter Voltage: VCEO= -250V
Collector Dissipation: PC (max)=625mW
Complement to 2N6515
TO-92
1
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -250 V
VCEO Collector-Emitter Voltage -250 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -500 mA
IB Base Current -250 mA
PC Collector Power Dissipation 625 mW
Derate above 25C5 mW/C
TJ Junction Temperature 150 C
TSTG Storage Temperature -55 ~ 150 C
Refer to 2N6520 for graphs
Electrical Characteristics Ta=25C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BVCBO * Collector-Base Breakdown Voltage IC= -100A, IE=0 -250 V
BVCEO Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -250 V
BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 -5 V
ICBO Collector Cut-off Current VCB= -150V, IE=0 -50 nA
IEBO Emitter |
5.4. 2n6519.pdf Size:26K _fairchild_semi  |
 | 2N6519
High Voltage Transistor
Collector-Emitter Voltage: VCEO= -300V
Collector Dissipation: PC (max)=625mW
TO-92
1
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage -300 V
VCEO Collector-Emitter Voltage -300 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -500 mA
IB Base Current -250 mA
PC Collector Power Dissipation 625 W
Derate above 25C5 mW/C
TJ Junction Temperature 150 C
TSTG Storage Temperature -55 ~ 150 C
Refer to 2N6520 for graphs
Electrical Characteristics Ta=25C unless otherwise noted
Symbol Parameter Test Condition Min. Max. Units
BVCBO Collector-Base Breakdown Voltage IC= -100A, IE=0 -300 V
BVCEO * Collector-Emitter Breakdown Voltage IC= -1mA, IB=0 -300 V
BVEBO Emitter-Base Breakdown Voltage IE= -10A, IC=0 -5 V
ICBO Collector Cut-off Current VCB= -200V, IE=0 -50 nA
IEBO Emitter Cut-off Current VEB= -4V |
5.5. 2n6517.pdf Size:175K _fairchild_semi  |
 | August 2010
2N6517
NPN Epitaxial Silicon Transistor
Features
High Voltage Transistor
Collector Dissipation: PC(max) = 625mW
Complement to 2N6520
Suffix -C means Center Collector (1. Emitter 2. Collector 3. Base)
TO-92
1
1. Emitter 2. Base 3. Collector
Absolute Maximum Ratings Ta = 25C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage 2N6517 350 V
2N6517C 400 V
VCEO Collector-Emitter Voltage 2N6517 350 V
2N6517C 400 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current 500 mA
PC Collector Power Dissipation 625 mW
TJ Junction Temperature 150 C
TSTG Storage Temperature -55 ~ 150 C
Electrical Characteristics Ta = 25C unless otherwise noted
Symbol Parameter Conditions Min. Max. Units
BVCBO Collector-Base Breakdown Voltage
2N6517 IC = 100A, IE = 0 350 V
2N6517C IC = 100A, IE = 0 400 V
BVCEO Collector-Emitter Breakdown Voltage *
2N6517 IC = 1mA, IB = 0 350 V
2N6517C IC = 1mA, IB = 0 400 V
BVEBO Emitter-Base Breakd |
5.6. 2n6515.pdf Size:43K _samsung  |
 | 2N6515 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
TO-92
Collector-Emitter Voltage: VCEO= 250V
Collector Dissipation: PC (max)=625mW
ABSOLUTE MAXIMUM RATINGS (T =25 )
A
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 250 V
Collector-Emitter Voltage VCEO 250 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 500 mA
Collector Dissipation PC 625 mW
Junction Temperature TJ 150
Storage Temperature TSTG -55 ~ 150
1.Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (T =25 )
A
Characteristic Symbol Test Conditions Min Typ Max Unit
250
Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 V
Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 250 V
V
Emitter-Base Breakdown Voltage BVEBO IE=10 , IC=0 6
Collector Cut-off Current ICBO VCB=150V, IE=0 nA
50
nA
Emitter Cut-off Current
IEBO VBE=5V, IC=0
50
DC Current Gain 35
hFE IC=1mA, VCE=10V
IC=10mA, VCE=10V
50
IC=30mA, VCE=10V
50
300
IC=50mA, VCE=10V
45
220
IC=10 |
5.7. 2n6517.pdf Size:21K _samsung  |
 | 2N6517 NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
TO-92
Collector-Emitter Voltage: VCEO=350V
Collector Dissipation: PC (max)=625mW
ABSOLUTE MAXIMUM RATINGS (T =25 )
A
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 350 V
Collector-Emitter Voltage VCEO 350 V
Emitter-Base Voltage VEBO 6 V
Collector Current IC 500 mA
Collector Dissipation PC 625 mW
Junction Temperature TJ 150
Storage Temperature TSTG -55 ~ 150
Refer to 2N6515 for graphs
1.Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (T =25 )
A
Characteristic Symbol Test Conditions Min Typ Max Unit
350
Collector-Emitter Breakdown Voltage BVCEO IC=1mA, IB=0 V
Collector-Base Breakdown Voltage BVCBO IC=100 , IE=0 350 V
V
Emitter-Base Breakdown Voltage BVEBO IE=10 , IC=0 6
Collector Cut-off Current ICBO VCB=250V, IE=0 nA
50
Emitter Cut-off Current IEBO VEB=5V, IC=0 nA
50
DC Current Gain
hFE IC=1mA, VCE=10V 20
IC=10mA, VCE=10V
30
IC=30mA, VCE=10V
30
200
IC=50 |
5.8. 2n6516.pdf Size:35K _samsung 5.9. 2n6515_2n6517_2n6520.pdf Size:116K _onsemi  |
 | NPN - 2N6515, 2N6517;
PNP - 2N6520
High Voltage Transistors
NPN and PNP
Features
http://onsemi.com
Voltage and Current are Negative for PNP Transistors
COLLECTOR
These are Pb-Free Devices*
3
2
BASE
MAXIMUM RATINGS
COLLECTOR
NPN
Rating Symbol Value Unit
3
1
Collector - Emitter Voltage VCEO Vdc
EMITTER
2N6515 250
2
2N6517, 2N6520 350
BASE
Collector - Base Voltage VCBO Vdc
PNP
2N6515 250
1
2N6517, 2N6520 350
EMITTER
Emitter - Base Voltage VEBO Vdc
2N6515, 2N6517 6.0
2N6520 5.0
Base Current IB 250 mAdc
TO-92
Collector Current - Continuous IC 500 mAdc
CASE 29
Total Device Dissipation @ TA = 25C PD 625 mW
STYLE 1
Derate above 25C 5.0 mW/C
1
Total Device Dissipation @ TC = 25C PD 1.5 W
1
2
2
Derate above 25C 12 mW/C 3
3
STRAIGHT LEAD BENT LEAD
Operating and Storage Junction TJ, Tstg -55 to +150 C
BULK PACK TAPE & REEL
Temperature Range
AMMO PACK
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit MARKING DIAGRAM
Thermal Resis |
5.10. 2n6511.pdf Size:11K _semelab  |
 | 2N6511
Dimensions in mm (inches).
Bipolar NPN Device in a
Hermetically sealed TO3
25.15 (0.99)
6.35 (0.25)
26.67 (1.05)
9.15 (0.36)
Metal Package.
10.67 (0.42)
11.18 (0.44) 1.52 (0.06)
3.43 (0.135)
1 2 Bipolar NPN Device.
3
VCEO = 250V
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312) IC = 7A
12.70 (0.50)
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications.
TO3 (TO204AA)
PINOUTS
1 Base 2 Emitter Case - Collector
Parameter Test Conditions Min. Typ. Max. Units
VCEO* 250 V
IC(CONT) 7 A
hFE @ 3/4 (VCE / IC) 10 50 -
ft 3M Hz
PD 120 W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at |
5.11. 2n6512.pdf Size:11K _semelab  |
 | 2N6512
Dimensions in mm (inches).
Bipolar NPN Device in a
Hermetically sealed TO3
25.15 (0.99)
6.35 (0.25)
26.67 (1.05)
9.15 (0.36)
Metal Package.
10.67 (0.42)
11.18 (0.44) 1.52 (0.06)
3.43 (0.135)
1 2 Bipolar NPN Device.
3
VCEO = 300V
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312) IC = 7A
12.70 (0.50)
All Semelab hermetically sealed products
can be processed in accordance with the
requirements of BS, CECC and JAN,
JANTX, JANTXV and JANS specifications.
TO3 (TO204AA)
PINOUTS
1 Base 2 Emitter Case - Collector
Parameter Test Conditions Min. Typ. Max. Units
VCEO* 300 V
IC(CONT) 7 A
hFE @ 3/4 (VCE / IC) 10 50 -
ft 3M Hz
PD 120 W
* Maximum Working Voltage
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at |
5.12. 2n6517.pdf Size:130K _secos  |
 | 2N6517
0.5 A, 350V
NPN Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES TO-92
? High Voltage Transistors
G H
? Complement of the 2N6520
?Emitter
?Base
J
?Collector
A D
Millimeter
B
REF.
Collector
Min. Max.
?? A 4.40 4.70
K
B 4.30 4.70
C 12.70 -
D 3.30 3.81
?? E 0.36 0.56
E C F
F 0.36 0.51
Base
G 1.27 TYP.
H 1.10 -
J 2.42 2.66
??
K 0.36 0.76
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 350 V
Collector to Emitter Voltage VCEO 350 V
Emitter to Base Voltage VEBO 6 V
Collector Current - Continuous IC 500 mA
Collector Power Dissipation PC 0.625 W
Thermal resistance, Junction to ambient R?JA 200 °C / W
Junction, Storage Temperature TJ, TSTG 150, -55~150 °C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter Symbol Min. Typ. Max. U |
See also transistors datasheet: 2N6502
, 2N6503
, 2N650A
, 2N651
, 2N6510
, 2N6511
, 2N6512
, 2N6513
, 2N2222
, 2N6515
, 2N6516
, 2N6517
, 2N6518
, 2N6519
, 2N651A
, 2N652
, 2N6520
. Keywords| 2N6514
Datasheet | 2N6514
Datenblatt | 2N6514
RoHS | 2N6514
Distributor | | 2N6514
Application Notes | 2N6514
Component | 2N6514
Circuit | 2N6514
Schematic | | 2N6514
Equivalent | 2N6514
Cross Reference | 2N6514
Data Sheet | 2N6514
Fiche Technique |
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