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2N652
  2N652
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2N652
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2N652
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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2N652 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N652 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N652

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 30

Maximum collector current |Ic max|, A: 0.5

Maksimalna temperatura (Tj), °C: 90

Transition frequency (ft), MHz: 1.2

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of 2N652 transistor: TO5

2N652 Equivalent Transistors - Cross-Reference Search

2N652 PDF doc:

1.1. 2n6515_2n6517_2n6519_2n6520.pdf Size:229K _motorola

2N652
2N652
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN COLLECTOR COLLECTOR 2N6515 3 3 2N6517 2 2 PNP BASE BASE NPN PNP 2N6519 1 1 EMITTER EMITTER 2N6520 MAXIMUM RATINGS Voltage and current are negative 2N6517 for PNP transistors 2N6520 Rating Symbol 2N6515 2N6519 Unit Collector–Emitter Voltage VCEO 250 300 350 Vdc Collector–Base Voltage VCBO 250 300 350 Vdc Emitter–Base Voltage VEBO Vdc 2N6515, 2N6516, 2N6517 6.0 2N6519, 2N6520 5.0 Base Current IB 250 mAdc Collector Current — Continuous IC 500 mAdc 1 Total Device Dissipation PD 625 mW 2 3 @ TA = 25°C 5.0 mW/°C Derate above 25°C CASE 29–04, STYLE 1 Total Device Dissipation PD 1.5 Watts TO–92 (TO–226AA) @ TC = 25°C 12 mW/°C Derate above 25°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junctio

1.2. 2n6515_2n6516_2n6517_2n6519_2n6520.pdf Size:329K _motorola

2N652
2N652
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN 2N6515 * COLLECTOR COLLECTOR thru 2N6517 3 3 PNP 2 2 2N6519 BASE BASE NPN PNP 2N6520 * 1 1 Voltage and current are negative EMITTER EMITTER for PNP transistors MAXIMUM RATINGS *Motorola Preferred Device 2N6516 2N6517 2N6519 2N6520 Rating Symbol 2N6515 Unit Collector–Emitter Voltage VCEO 250 300 350 Vdc Collector–Base Voltage VCBO 250 300 350 Vdc Emitter–Base Voltage VEBO Vdc 2N6515, 2N6516, 2N6517 6.0 2N6519, 2N6520 5.0 Base Current IB 250 mAdc 1 2 Collector Current — Continuous IC 500 mAdc 3 Total Device Dissipation PD 625 mW CASE 29–04, STYLE 1 @ TA = 25°C 5.0 mW/°C TO–92 (TO–226AA) Derate above 25°C Total Device Dissipation PD 1.5 Watts @ TC = 25°C 12 mW/°C Derate above 25°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambie

1.3. 2n6520.pdf Size:156K _fairchild_semi

2N652
2N652
June 2009 2N6520 PNP Epitaxial Silicon Transistor Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC (max)=625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage -350 V VCEO Collector-Emitter Voltage -350 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA IB Base Current -250 mA PC Collector Power Dissipation 0.625 W Derate above 25°C5 mW/°C TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N6520 Rev. B1 1 2N6520 — PNP Epitaxial Silicon Transistor Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Conditions Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100?A, IE=0 -350 V BVCEO * Collector-Emitter Breakdown Voltage IC= -1mA, IB=0

1.4. 2n6520.pdf Size:81K _samsung

2N652
2N652
2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -350 V Collector-Emitter Voltage VCEO -350 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Base Current IB -250 mA Collector Dissipation PC 0.625 W Derate above 25 5 mW/ Junction Temperature TJ 50 Storage Temperature TSTG -55 ~ 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Max Unit -350 Collector-Base Breakdown Voltage BVCBO IC= -100 , IE=0 V Collector-Emitter Breakdown Voltage BVCEO IC= -1mA, IB=0 -350 V Emitter-Base Breakdown Voltage BVEBO IE= -10 , IC=0 -5 V Collector Cut-off Current ICBO VCB= -250V, IE=0 -50 nA Emitter Cut-off Current IEBO VEB= -4V, IC=0 -50 nA DC Current Gain hFE VCE= -10V, IC= -1mA 20 VCE= -10V, IC= -10mA 30 VCE= -10V, IC= -30mA 30 200 VCE= -10V, IC= -50mA 20 20

1.5. 2n6515_2n6517_2n6520.pdf Size:116K _onsemi

2N652
2N652
NPN - 2N6515, 2N6517; PNP - 2N6520 High Voltage Transistors NPN and PNP Features http://onsemi.com • Voltage and Current are Negative for PNP Transistors COLLECTOR • These are Pb-Free Devices* 3 2 BASE MAXIMUM RATINGS COLLECTOR NPN Rating Symbol Value Unit 3 1 Collector - Emitter Voltage VCEO Vdc EMITTER 2N6515 250 2 2N6517, 2N6520 350 BASE Collector - Base Voltage VCBO Vdc PNP 2N6515 250 1 2N6517, 2N6520 350 EMITTER Emitter - Base Voltage VEBO Vdc 2N6515, 2N6517 6.0 2N6520 5.0 Base Current IB 250 mAdc TO-92 Collector Current - Continuous IC 500 mAdc CASE 29 Total Device Dissipation @ TA = 25°C PD 625 mW STYLE 1 Derate above 25°C 5.0 mW/°C 1 Total Device Dissipation @ TC = 25°C PD 1.5 W 1 2 2 Derate above 25°C 12 mW/°C 3 3 STRAIGHT LEAD BENT LEAD Operating and Storage Junction TJ, Tstg -55 to +150 °C BULK PACK TAPE & REEL Temperature Range AMMO PACK THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Thermal Resis

1.6. 2n6520.pdf Size:237K _secos

2N652
2N652
2N6520 -0.5 A, -350 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ? High voltage transistors TO-92 G H Collector J ?? Millimeter REF. A D Min. Max. A 4.40 4.70 B B 4.30 4.70 ?? C 12.70 - K D 3.30 3.81 Base E 0.36 0.56 F 0.36 0.51 ?? E C F G 1.27 TYP. H 1.10 - Emitter J 2.42 2.66 K 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO -350 V Collector to Emitter Voltage VCEO -350 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -0.5 A Collector Power Dissipation PC 0.625 W Thermal resistance, junction to ambient R?JA 200 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Collector to Base Breakdown Volt

1.7. 2n6515-7_9_2n6520.pdf Size:214K _cdil

2N652
2N652
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRANSISTORS ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N6515 2N6516 2N6517 UNIT 2N6519 2N6520 VCEO Collector Emitter Voltage 250 300 350 V VCBO Collector Base Voltage 250 300 350 V VEBO Emitter Base Voltage NPN-------------------6------------------ V PNP-------------------5------------------ V IC Collector Current Continuous 500 mA IB Base Current (Continuous) 250 mA PD Total Power Dissipation @ Ta=25?C 625 mW Derate Above 25?C 5.0 mW/?C Tstg Operating And Storage Junction -55 to +150 ?C Temperature Range THERMAL RESISTANCE Rth(j-a) Junction to ambient 200 ?C/W Rth(j-c) Junction to case 83.3 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT BVCEO*

See also transistors datasheet: 2N6513 , 2N6514 , 2N6515 , 2N6516 , 2N6517 , 2N6518 , 2N6519 , 2N651A , BD139 , 2N6520 , 2N6521 , 2N6522 , 2N6523 , 2N6524 , 2N6525 , 2N6526 , 2N6527 .

Keywords

 2N652 Datasheet  2N652 Datenblatt  2N652 RoHS  2N652 Distributor
 2N652 Application Notes  2N652 Component  2N652 Circuit  2N652 Schematic
 2N652 Equivalent  2N652 Cross Reference  2N652 Data Sheet  2N652 Fiche Technique

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