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2N652
  2N652
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2N652
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2N652
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List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2N652 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N652 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N652

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 30

Maximum collector current |Ic max|, A: 0.5

Maksimalna temperatura (Tj), °C: 90

Transition frequency (ft), MHz: 1.2

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of 2N652 transistor: TO5

2N652 Equivalent Transistors - Cross-Reference Search

2N652 PDF doc:

1.1. 2n6515_2n6517_2n6519_2n6520.pdf Size:229K _motorola

2N652
2N652
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN COLLECTOR COLLECTOR 2N6515 3 3 2N6517 2 2 PNP BASE BASE NPN PNP 2N6519 1 1 EMITTER EMITTER 2N6520 MAXIMUM RATINGS Voltage and current are negative 2N6517 for PNP transistors 2N6520 Rating Symbol 2N6515 2N6519 Unit Collector–Emitter Voltage VCEO 250 300 350 Vdc Collector–Base Voltage VCBO 250 300 350 Vdc Emitter–Base Voltage VEBO Vdc 2N6515, 2N6516, 2N6517 6.0 2N6519, 2N6520 5.0 Base Current IB 250 mAdc Collector Current — Continuous IC 500 mAdc 1 Total Device Dissipation PD 625 mW 2 3 @ TA = 25°C 5.0 mW/°C Derate above 25°C CASE 29–04, STYLE 1 Total Device Dissipation PD 1.5 Watts TO–92 (TO–226AA) @ TC = 25°C 12 mW/°C Derate above 25°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junctio

1.2. 2n6515_2n6516_2n6517_2n6519_2n6520.pdf Size:329K _motorola

2N652
2N652
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN 2N6515 * COLLECTOR COLLECTOR thru 2N6517 3 3 PNP 2 2 2N6519 BASE BASE NPN PNP 2N6520 * 1 1 Voltage and current are negative EMITTER EMITTER for PNP transistors MAXIMUM RATINGS *Motorola Preferred Device 2N6516 2N6517 2N6519 2N6520 Rating Symbol 2N6515 Unit Collector–Emitter Voltage VCEO 250 300 350 Vdc Collector–Base Voltage VCBO 250 300 350 Vdc Emitter–Base Voltage VEBO Vdc 2N6515, 2N6516, 2N6517 6.0 2N6519, 2N6520 5.0 Base Current IB 250 mAdc 1 2 Collector Current — Continuous IC 500 mAdc 3 Total Device Dissipation PD 625 mW CASE 29–04, STYLE 1 @ TA = 25°C 5.0 mW/°C TO–92 (TO–226AA) Derate above 25°C Total Device Dissipation PD 1.5 Watts @ TC = 25°C 12 mW/°C Derate above 25°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambie

1.3. 2n6520.pdf Size:156K _fairchild_semi

2N652
2N652
June 2009 2N6520 PNP Epitaxial Silicon Transistor Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC (max)=625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage -350 V VCEO Collector-Emitter Voltage -350 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA IB Base Current -250 mA PC Collector Power Dissipation 0.625 W Derate above 25°C5 mW/°C TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N6520 Rev. B1 1 2N6520 — PNP Epitaxial Silicon Transistor Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Conditions Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100?A, IE=0 -350 V BVCEO * Collector-Emitter Breakdown Voltage IC= -1mA, IB=0

1.4. 2n6520.pdf Size:81K _samsung

2N652
2N652
2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -350 V Collector-Emitter Voltage VCEO -350 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Base Current IB -250 mA Collector Dissipation PC 0.625 W Derate above 25 5 mW/ Junction Temperature TJ 50 Storage Temperature TSTG -55 ~ 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Max Unit -350 Collector-Base Breakdown Voltage BVCBO IC= -100 , IE=0 V Collector-Emitter Breakdown Voltage BVCEO IC= -1mA, IB=0 -350 V Emitter-Base Breakdown Voltage BVEBO IE= -10 , IC=0 -5 V Collector Cut-off Current ICBO VCB= -250V, IE=0 -50 nA Emitter Cut-off Current IEBO VEB= -4V, IC=0 -50 nA DC Current Gain hFE VCE= -10V, IC= -1mA 20 VCE= -10V, IC= -10mA 30 VCE= -10V, IC= -30mA 30 200 VCE= -10V, IC= -50mA 20 20

1.5. 2n6515_2n6517_2n6520.pdf Size:116K _onsemi

2N652
2N652
NPN - 2N6515, 2N6517; PNP - 2N6520 High Voltage Transistors NPN and PNP Features http://onsemi.com • Voltage and Current are Negative for PNP Transistors COLLECTOR • These are Pb-Free Devices* 3 2 BASE MAXIMUM RATINGS COLLECTOR NPN Rating Symbol Value Unit 3 1 Collector - Emitter Voltage VCEO Vdc EMITTER 2N6515 250 2 2N6517, 2N6520 350 BASE Collector - Base Voltage VCBO Vdc PNP 2N6515 250 1 2N6517, 2N6520 350 EMITTER Emitter - Base Voltage VEBO Vdc 2N6515, 2N6517 6.0 2N6520 5.0 Base Current IB 250 mAdc TO-92 Collector Current - Continuous IC 500 mAdc CASE 29 Total Device Dissipation @ TA = 25°C PD 625 mW STYLE 1 Derate above 25°C 5.0 mW/°C 1 Total Device Dissipation @ TC = 25°C PD 1.5 W 1 2 2 Derate above 25°C 12 mW/°C 3 3 STRAIGHT LEAD BENT LEAD Operating and Storage Junction TJ, Tstg -55 to +150 °C BULK PACK TAPE & REEL Temperature Range AMMO PACK THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Thermal Resis

1.6. 2n6520.pdf Size:237K _secos

2N652
2N652
2N6520 -0.5 A, -350 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ? High voltage transistors TO-92 G H Collector J ?? Millimeter REF. A D Min. Max. A 4.40 4.70 B B 4.30 4.70 ?? C 12.70 - K D 3.30 3.81 Base E 0.36 0.56 F 0.36 0.51 ?? E C F G 1.27 TYP. H 1.10 - Emitter J 2.42 2.66 K 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO -350 V Collector to Emitter Voltage VCEO -350 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -0.5 A Collector Power Dissipation PC 0.625 W Thermal resistance, junction to ambient R?JA 200 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Collector to Base Breakdown Volt

1.7. 2n6515-7_9_2n6520.pdf Size:214K _cdil

2N652
2N652
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRANSISTORS ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N6515 2N6516 2N6517 UNIT 2N6519 2N6520 VCEO Collector Emitter Voltage 250 300 350 V VCBO Collector Base Voltage 250 300 350 V VEBO Emitter Base Voltage NPN-------------------6------------------ V PNP-------------------5------------------ V IC Collector Current Continuous 500 mA IB Base Current (Continuous) 250 mA PD Total Power Dissipation @ Ta=25?C 625 mW Derate Above 25?C 5.0 mW/?C Tstg Operating And Storage Junction -55 to +150 ?C Temperature Range THERMAL RESISTANCE Rth(j-a) Junction to ambient 200 ?C/W Rth(j-c) Junction to case 83.3 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT BVCEO*

See also transistors datasheet: 2N6513 , 2N6514 , 2N6515 , 2N6516 , 2N6517 , 2N6518 , 2N6519 , 2N651A , BD139 , 2N6520 , 2N6521 , 2N6522 , 2N6523 , 2N6524 , 2N6525 , 2N6526 , 2N6527 .

Keywords

 2N652 Datasheet  2N652 Datenblatt  2N652 RoHS  2N652 Distributor
 2N652 Application Notes  2N652 Component  2N652 Circuit  2N652 Schematic
 2N652 Equivalent  2N652 Cross Reference  2N652 Data Sheet  2N652 Fiche Technique

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