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2N652
  2N652
  2N652
  2N652
 
2N652
  2N652
  2N652
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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
2N652 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N652 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N652

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 30

Maximum collector current |Ic max|, A: 0.5

Maksimalna temperatura (Tj), °C: 90

Transition frequency (ft), MHz: 1.2

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of 2N652 transistor: TO5

2N652 Equivalent Transistors - Cross-Reference Search

2N652 PDF doc:

1.1. 2n6515_2n6517_2n6519_2n6520.pdf Size:229K _motorola

2N652
2N652
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN COLLECTOR COLLECTOR 2N6515 3 3 2N6517 2 2 PNP BASE BASE NPN PNP 2N6519 1 1 EMITTER EMITTER 2N6520 MAXIMUM RATINGS Voltage and current are negative 2N6517 for PNP transistors 2N6520 Rating Symbol 2N6515 2N6519 Unit Collector–Emitter Voltage VCEO 250 300 350 Vdc Collector–Base Voltage VCBO 250 300 350 Vdc Emitter–Base Voltage VEBO Vdc 2N6515, 2N6516, 2N6517 6.0 2N6519, 2N6520 5.0 Base Current IB 250 mAdc Collector Current — Continuous IC 500 mAdc 1 Total Device Dissipation PD 625 mW 2 3 @ TA = 25°C 5.0 mW/°C Derate above 25°C CASE 29–04, STYLE 1 Total Device Dissipation PD 1.5 Watts TO–92 (TO–226AA) @ TC = 25°C 12 mW/°C Derate above 25°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junctio

1.2. 2n6515_2n6516_2n6517_2n6519_2n6520.pdf Size:329K _motorola

2N652
2N652
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN 2N6515 * COLLECTOR COLLECTOR thru 2N6517 3 3 PNP 2 2 2N6519 BASE BASE NPN PNP 2N6520 * 1 1 Voltage and current are negative EMITTER EMITTER for PNP transistors MAXIMUM RATINGS *Motorola Preferred Device 2N6516 2N6517 2N6519 2N6520 Rating Symbol 2N6515 Unit Collector–Emitter Voltage VCEO 250 300 350 Vdc Collector–Base Voltage VCBO 250 300 350 Vdc Emitter–Base Voltage VEBO Vdc 2N6515, 2N6516, 2N6517 6.0 2N6519, 2N6520 5.0 Base Current IB 250 mAdc 1 2 Collector Current — Continuous IC 500 mAdc 3 Total Device Dissipation PD 625 mW CASE 29–04, STYLE 1 @ TA = 25°C 5.0 mW/°C TO–92 (TO–226AA) Derate above 25°C Total Device Dissipation PD 1.5 Watts @ TC = 25°C 12 mW/°C Derate above 25°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambie

1.3. 2n6520.pdf Size:156K _fairchild_semi

2N652
2N652
June 2009 2N6520 PNP Epitaxial Silicon Transistor Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC (max)=625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage -350 V VCEO Collector-Emitter Voltage -350 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA IB Base Current -250 mA PC Collector Power Dissipation 0.625 W Derate above 25°C5 mW/°C TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N6520 Rev. B1 1 2N6520 — PNP Epitaxial Silicon Transistor Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Conditions Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100?A, IE=0 -350 V BVCEO * Collector-Emitter Breakdown Voltage IC= -1mA, IB=0

1.4. 2n6520.pdf Size:81K _samsung

2N652
2N652
2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -350 V Collector-Emitter Voltage VCEO -350 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Base Current IB -250 mA Collector Dissipation PC 0.625 W Derate above 25 5 mW/ Junction Temperature TJ 50 Storage Temperature TSTG -55 ~ 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Max Unit -350 Collector-Base Breakdown Voltage BVCBO IC= -100 , IE=0 V Collector-Emitter Breakdown Voltage BVCEO IC= -1mA, IB=0 -350 V Emitter-Base Breakdown Voltage BVEBO IE= -10 , IC=0 -5 V Collector Cut-off Current ICBO VCB= -250V, IE=0 -50 nA Emitter Cut-off Current IEBO VEB= -4V, IC=0 -50 nA DC Current Gain hFE VCE= -10V, IC= -1mA 20 VCE= -10V, IC= -10mA 30 VCE= -10V, IC= -30mA 30 200 VCE= -10V, IC= -50mA 20 20

1.5. 2n6515_2n6517_2n6520.pdf Size:116K _onsemi

2N652
2N652
NPN - 2N6515, 2N6517; PNP - 2N6520 High Voltage Transistors NPN and PNP Features http://onsemi.com • Voltage and Current are Negative for PNP Transistors COLLECTOR • These are Pb-Free Devices* 3 2 BASE MAXIMUM RATINGS COLLECTOR NPN Rating Symbol Value Unit 3 1 Collector - Emitter Voltage VCEO Vdc EMITTER 2N6515 250 2 2N6517, 2N6520 350 BASE Collector - Base Voltage VCBO Vdc PNP 2N6515 250 1 2N6517, 2N6520 350 EMITTER Emitter - Base Voltage VEBO Vdc 2N6515, 2N6517 6.0 2N6520 5.0 Base Current IB 250 mAdc TO-92 Collector Current - Continuous IC 500 mAdc CASE 29 Total Device Dissipation @ TA = 25°C PD 625 mW STYLE 1 Derate above 25°C 5.0 mW/°C 1 Total Device Dissipation @ TC = 25°C PD 1.5 W 1 2 2 Derate above 25°C 12 mW/°C 3 3 STRAIGHT LEAD BENT LEAD Operating and Storage Junction TJ, Tstg -55 to +150 °C BULK PACK TAPE & REEL Temperature Range AMMO PACK THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Thermal Resis

1.6. 2n6520.pdf Size:237K _secos

2N652
2N652
2N6520 -0.5 A, -350 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ? High voltage transistors TO-92 G H Collector J ?? Millimeter REF. A D Min. Max. A 4.40 4.70 B B 4.30 4.70 ?? C 12.70 - K D 3.30 3.81 Base E 0.36 0.56 F 0.36 0.51 ?? E C F G 1.27 TYP. H 1.10 - Emitter J 2.42 2.66 K 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO -350 V Collector to Emitter Voltage VCEO -350 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -0.5 A Collector Power Dissipation PC 0.625 W Thermal resistance, junction to ambient R?JA 200 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Collector to Base Breakdown Volt

1.7. 2n6515-7_9_2n6520.pdf Size:214K _cdil

2N652
2N652
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRANSISTORS ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N6515 2N6516 2N6517 UNIT 2N6519 2N6520 VCEO Collector Emitter Voltage 250 300 350 V VCBO Collector Base Voltage 250 300 350 V VEBO Emitter Base Voltage NPN-------------------6------------------ V PNP-------------------5------------------ V IC Collector Current Continuous 500 mA IB Base Current (Continuous) 250 mA PD Total Power Dissipation @ Ta=25?C 625 mW Derate Above 25?C 5.0 mW/?C Tstg Operating And Storage Junction -55 to +150 ?C Temperature Range THERMAL RESISTANCE Rth(j-a) Junction to ambient 200 ?C/W Rth(j-c) Junction to case 83.3 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT BVCEO*

See also transistors datasheet: 2N6513 , 2N6514 , 2N6515 , 2N6516 , 2N6517 , 2N6518 , 2N6519 , 2N651A , BD139 , 2N6520 , 2N6521 , 2N6522 , 2N6523 , 2N6524 , 2N6525 , 2N6526 , 2N6527 .

Keywords

 2N652 Datasheet  2N652 Datenblatt  2N652 RoHS  2N652 Distributor
 2N652 Application Notes  2N652 Component  2N652 Circuit  2N652 Schematic
 2N652 Equivalent  2N652 Cross Reference  2N652 Data Sheet  2N652 Fiche Technique

 

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