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2N652
  2N652
  2N652
 
2N652
  2N652
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2N652
  2N652
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU508DXI
BU508FI .. BUL6822
BUL6822A .. BUV39
BUV40 .. BUX80/6
BUX80/7 .. C9080
C9081 .. CEN-U45
CEN-U51 .. CJD3055
CJD31C .. CMPT918
CMPT930 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM7
D44VM8 .. DKS21
DKS22 .. DTA123EUA
DTA123J .. DTC143XE
DTC143XEA .. DZT491
DZT5401 .. ECG351
ECG352 .. ESM117
ESM118 .. FB3727
FB3728 .. FJV3113R
FJV3114R .. FMMT4964
FMMT497 .. FT400B
FT401 .. GC112
GC115 .. GES4400
GES4401 .. GI2715
GI2716 .. GT309D
GT309E .. HA7540
HA7541 .. HN1C01F
HN1C01FE .. HUN5236
HUN5237 .. JC559A
JC559C .. KF630D
KF630S .. KRA729U
KRA730E .. KRC662U
KRC663F .. KSA643
KSA643-G .. KSC2682-Y
KSC2688 .. KSD2012
KSD2012-G .. KSR2102
KSR2103 .. KT315E-1
KT315E1 .. KT610A
KT610B .. KT8127A
KT8127A-1 .. KT852G
KT852V .. KTA1703
KTA1704 .. KTC813U
KTC814U .. MA287
MA393 .. MH0812
MH0813 .. MJ8503
MJ8504 .. MJE41
MJE41A .. MM4033
MM4036 .. MMBT4403WT1
MMBT4888 .. MMUN2134LT1
MMUN2134LT2 .. MP3905R
MP3906 .. MPQ5447
MPQ5449 .. MPS834
MPS835 .. MRF427
MRF428 .. MZT127
MZT2955 .. NB011FJ
NB011FK .. NB123F
NB123FH .. NB323H
NB323K .. NPS3721
NPS3725 .. NSS40300
NSS40300DD .. OC466K
OC467 .. PBSS306NX
PBSS306NZ .. PEMB30
PEMB4 .. PN4250A
PN4257 .. PZTA14
PZTA27 .. RN1307
RN1308 .. RN2401
RN2402 .. RT484
RT497M .. SD3866AF
SD3960F .. SGS130
SGS131 .. SRA2202EF
SRA2202M .. STA3360PI
STA723D .. SUT161G
SUT290 .. TA1703B
TA1704 .. TI804
TI805 .. TIPL13004
TIPL13005 .. TN3398
TN3402 .. TP4258
TP4258A .. UMG1N
UMG2N .. UN6214
UN6215Q .. ZT1486A
ZT1487 .. ZTX342L
ZTX342M .. ZXTN25100DZ
ZXTN26020DMF .. ZXTPS720MC
 
2N652 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2N652 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N652

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 30

Maximum collector current |Ic max|, A: 0.5

Maksimalna temperatura (Tj), °C: 90

Transition frequency (ft), MHz: 1.2

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of 2N652 transistor: TO5

2N652 Equivalent Transistors - Cross-Reference Search

2N652 PDF doc:

1.1. 2n6515_2n6517_2n6519_2n6520.pdf Size:229K _motorola

2N652
2N652
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN COLLECTOR COLLECTOR 2N6515 3 3 2N6517 2 2 PNP BASE BASE NPN PNP 2N6519 1 1 EMITTER EMITTER 2N6520 MAXIMUM RATINGS Voltage and current are negative 2N6517 for PNP transistors 2N6520 Rating Symbol 2N6515 2N6519 Unit Collector–Emitter Voltage VCEO 250 300 350 Vdc Collector–Base Voltage VCBO 250 300 350 Vdc Emitter–Base Voltage VEBO Vdc 2N6515, 2N6516, 2N6517 6.0 2N6519, 2N6520 5.0 Base Current IB 250 mAdc Collector Current — Continuous IC 500 mAdc 1 Total Device Dissipation PD 625 mW 2 3 @ TA = 25°C 5.0 mW/°C Derate above 25°C CASE 29–04, STYLE 1 Total Device Dissipation PD 1.5 Watts TO–92 (TO–226AA) @ TC = 25°C 12 mW/°C Derate above 25°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junctio

1.2. 2n6515_2n6516_2n6517_2n6519_2n6520.pdf Size:329K _motorola

2N652
2N652
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN 2N6515 * COLLECTOR COLLECTOR thru 2N6517 3 3 PNP 2 2 2N6519 BASE BASE NPN PNP 2N6520 * 1 1 Voltage and current are negative EMITTER EMITTER for PNP transistors MAXIMUM RATINGS *Motorola Preferred Device 2N6516 2N6517 2N6519 2N6520 Rating Symbol 2N6515 Unit Collector–Emitter Voltage VCEO 250 300 350 Vdc Collector–Base Voltage VCBO 250 300 350 Vdc Emitter–Base Voltage VEBO Vdc 2N6515, 2N6516, 2N6517 6.0 2N6519, 2N6520 5.0 Base Current IB 250 mAdc 1 2 Collector Current — Continuous IC 500 mAdc 3 Total Device Dissipation PD 625 mW CASE 29–04, STYLE 1 @ TA = 25°C 5.0 mW/°C TO–92 (TO–226AA) Derate above 25°C Total Device Dissipation PD 1.5 Watts @ TC = 25°C 12 mW/°C Derate above 25°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambie

1.3. 2n6520.pdf Size:156K _fairchild_semi

2N652
2N652
June 2009 2N6520 PNP Epitaxial Silicon Transistor Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC (max)=625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage -350 V VCEO Collector-Emitter Voltage -350 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA IB Base Current -250 mA PC Collector Power Dissipation 0.625 W Derate above 25°C5 mW/°C TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N6520 Rev. B1 1 2N6520 — PNP Epitaxial Silicon Transistor Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Conditions Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100?A, IE=0 -350 V BVCEO * Collector-Emitter Breakdown Voltage IC= -1mA, IB=0

1.4. 2n6520.pdf Size:81K _samsung

2N652
2N652
2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -350 V Collector-Emitter Voltage VCEO -350 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Base Current IB -250 mA Collector Dissipation PC 0.625 W Derate above 25 5 mW/ Junction Temperature TJ 50 Storage Temperature TSTG -55 ~ 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Max Unit -350 Collector-Base Breakdown Voltage BVCBO IC= -100 , IE=0 V Collector-Emitter Breakdown Voltage BVCEO IC= -1mA, IB=0 -350 V Emitter-Base Breakdown Voltage BVEBO IE= -10 , IC=0 -5 V Collector Cut-off Current ICBO VCB= -250V, IE=0 -50 nA Emitter Cut-off Current IEBO VEB= -4V, IC=0 -50 nA DC Current Gain hFE VCE= -10V, IC= -1mA 20 VCE= -10V, IC= -10mA 30 VCE= -10V, IC= -30mA 30 200 VCE= -10V, IC= -50mA 20 20

1.5. 2n6515_2n6517_2n6520.pdf Size:116K _onsemi

2N652
2N652
NPN - 2N6515, 2N6517; PNP - 2N6520 High Voltage Transistors NPN and PNP Features http://onsemi.com • Voltage and Current are Negative for PNP Transistors COLLECTOR • These are Pb-Free Devices* 3 2 BASE MAXIMUM RATINGS COLLECTOR NPN Rating Symbol Value Unit 3 1 Collector - Emitter Voltage VCEO Vdc EMITTER 2N6515 250 2 2N6517, 2N6520 350 BASE Collector - Base Voltage VCBO Vdc PNP 2N6515 250 1 2N6517, 2N6520 350 EMITTER Emitter - Base Voltage VEBO Vdc 2N6515, 2N6517 6.0 2N6520 5.0 Base Current IB 250 mAdc TO-92 Collector Current - Continuous IC 500 mAdc CASE 29 Total Device Dissipation @ TA = 25°C PD 625 mW STYLE 1 Derate above 25°C 5.0 mW/°C 1 Total Device Dissipation @ TC = 25°C PD 1.5 W 1 2 2 Derate above 25°C 12 mW/°C 3 3 STRAIGHT LEAD BENT LEAD Operating and Storage Junction TJ, Tstg -55 to +150 °C BULK PACK TAPE & REEL Temperature Range AMMO PACK THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Thermal Resis

1.6. 2n6520.pdf Size:237K _secos

2N652
2N652
2N6520 -0.5 A, -350 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ? High voltage transistors TO-92 G H Collector J ?? Millimeter REF. A D Min. Max. A 4.40 4.70 B B 4.30 4.70 ?? C 12.70 - K D 3.30 3.81 Base E 0.36 0.56 F 0.36 0.51 ?? E C F G 1.27 TYP. H 1.10 - Emitter J 2.42 2.66 K 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO -350 V Collector to Emitter Voltage VCEO -350 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -0.5 A Collector Power Dissipation PC 0.625 W Thermal resistance, junction to ambient R?JA 200 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Collector to Base Breakdown Volt

1.7. 2n6515-7_9_2n6520.pdf Size:214K _cdil

2N652
2N652
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRANSISTORS ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N6515 2N6516 2N6517 UNIT 2N6519 2N6520 VCEO Collector Emitter Voltage 250 300 350 V VCBO Collector Base Voltage 250 300 350 V VEBO Emitter Base Voltage NPN-------------------6------------------ V PNP-------------------5------------------ V IC Collector Current Continuous 500 mA IB Base Current (Continuous) 250 mA PD Total Power Dissipation @ Ta=25?C 625 mW Derate Above 25?C 5.0 mW/?C Tstg Operating And Storage Junction -55 to +150 ?C Temperature Range THERMAL RESISTANCE Rth(j-a) Junction to ambient 200 ?C/W Rth(j-c) Junction to case 83.3 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT BVCEO*

See also transistors datasheet: 2N6513 , 2N6514 , 2N6515 , 2N6516 , 2N6517 , 2N6518 , 2N6519 , 2N651A , BD139 , 2N6520 , 2N6521 , 2N6522 , 2N6523 , 2N6524 , 2N6525 , 2N6526 , 2N6527 .

Keywords

 2N652 Datasheet  2N652 Datenblatt  2N652 RoHS  2N652 Distributor
 2N652 Application Notes  2N652 Component  2N652 Circuit  2N652 Schematic
 2N652 Equivalent  2N652 Cross Reference  2N652 Data Sheet  2N652 Fiche Technique

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