All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2N652
  2N652
  2N652
 
2N652
  2N652
  2N652
 
2N652
  2N652
 
 
List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
2N652 All Transistors Datasheet. BJT, Power MOSFET, IGBT, IC Catalog
 

2N652 Transistor (IC) Datasheet. Cross Reference Search. 2N652 Equivalent

Type Designator: 2N652

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 45

Maximum emitter-base voltage |Ueb|, V: 30

Maximum collector current |Ic max|, A: 0.5

Maksimalna temperatura (Tj), °C: 90

Transition frequency (ft), MHz: 1.2

Collector capacitance (Cc), pF: 20

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of 2N652 transistor: TO5

2N652 Equivalent Transistors - Cross-Reference Search

 

2N652 PDF doc:

1.1. 2n6515_2n6516_2n6517_2n6519_2n6520.pdf Size:329K _motorola

2N652
2N652
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN 2N6515 * COLLECTOR COLLECTOR thru 2N6517 3 3 PNP 2 2 2N6519 BASE BASE NPN PNP 2N6520 * 1 1 Voltage and current are negative EMITTER EMITTER for PNP transistors MAXIMUM RATINGS *Motorola Preferred Device 2N6516 2N6517 2N6519 2N6520 Rating Symbol 2N6515 Unit Collector–Emitter Voltage VCEO 250 300 350 Vdc Collector–Base Voltage VCBO 250 300 350 Vdc Emitter–Base Voltage VEBO Vdc 2N6515, 2N6516, 2N6517 6.0 2N6519, 2N6520 5.0 Base Current IB 250 mAdc 1 2 Collector Current — Continuous IC 500 mAdc 3 Total Device Dissipation PD 625 mW CASE 29–04, STYLE 1 @ TA = 25°C 5.0 mW/°C TO–92 (TO–226AA) Derate above 25°C Total Device Dissipation PD 1.5 Watts @ TC = 25°C 12 mW/°C Derate above 25°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambie

1.2. 2n6515_2n6517_2n6519_2n6520.pdf Size:229K _motorola

2N652
2N652
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6515/D High Voltage Transistors NPN COLLECTOR COLLECTOR 2N6515 3 3 2N6517 2 2 PNP BASE BASE NPN PNP 2N6519 1 1 EMITTER EMITTER 2N6520 MAXIMUM RATINGS Voltage and current are negative 2N6517 for PNP transistors 2N6520 Rating Symbol 2N6515 2N6519 Unit Collector–Emitter Voltage VCEO 250 300 350 Vdc Collector–Base Voltage VCBO 250 300 350 Vdc Emitter–Base Voltage VEBO Vdc 2N6515, 2N6516, 2N6517 6.0 2N6519, 2N6520 5.0 Base Current IB 250 mAdc Collector Current — Continuous IC 500 mAdc 1 Total Device Dissipation PD 625 mW 2 3 @ TA = 25°C 5.0 mW/°C Derate above 25°C CASE 29–04, STYLE 1 Total Device Dissipation PD 1.5 Watts TO–92 (TO–226AA) @ TC = 25°C 12 mW/°C Derate above 25°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal Resistance, Junctio

1.3. 2n6520.pdf Size:156K _fairchild_semi

2N652
2N652
June 2009 2N6520 PNP Epitaxial Silicon Transistor Features • High Voltage Transistor • Collector-Emitter Voltage: VCBO= -350V • Collector Dissipation: PC (max)=625mW • Complement to 2N6517 TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Unit VCBO Collector-Base Voltage -350 V VCEO Collector-Emitter Voltage -350 V VEBO Emitter-Base Voltage -5 V IC Collector Current -500 mA IB Base Current -250 mA PC Collector Power Dissipation 0.625 W Derate above 25°C5 mW/°C TJ Junction Temperature 150 °C TSTG Storage Temperature -55 to +150 °C © 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com 2N6520 Rev. B1 1 2N6520 — PNP Epitaxial Silicon Transistor Electrical Characteristics TA=25°C unless otherwise noted Symbol Parameter Test Conditions Min. Max. Units BVCBO Collector-Base Breakdown Voltage IC= -100?A, IE=0 -350 V BVCEO * Collector-Emitter Breakdown Voltage IC= -1mA, IB=0

1.4. 2n6520.pdf Size:81K _samsung

2N652
2N652
2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -350 V Collector-Emitter Voltage VCEO -350 V Emitter-Base Voltage VEBO -5 V Collector Current IC -500 mA Base Current IB -250 mA Collector Dissipation PC 0.625 W Derate above 25 5 mW/ Junction Temperature TJ 50 Storage Temperature TSTG -55 ~ 150 1.Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Max Unit -350 Collector-Base Breakdown Voltage BVCBO IC= -100 , IE=0 V Collector-Emitter Breakdown Voltage BVCEO IC= -1mA, IB=0 -350 V Emitter-Base Breakdown Voltage BVEBO IE= -10 , IC=0 -5 V Collector Cut-off Current ICBO VCB= -250V, IE=0 -50 nA Emitter Cut-off Current IEBO VEB= -4V, IC=0 -50 nA DC Current Gain hFE VCE= -10V, IC= -1mA 20 VCE= -10V, IC= -10mA 30 VCE= -10V, IC= -30mA 30 200 VCE= -10V, IC= -50mA 20 20

1.5. 2n6515_2n6517_2n6520.pdf Size:116K _onsemi

2N652
2N652
NPN - 2N6515, 2N6517; PNP - 2N6520 High Voltage Transistors NPN and PNP Features http://onsemi.com • Voltage and Current are Negative for PNP Transistors COLLECTOR • These are Pb-Free Devices* 3 2 BASE MAXIMUM RATINGS COLLECTOR NPN Rating Symbol Value Unit 3 1 Collector - Emitter Voltage VCEO Vdc EMITTER 2N6515 250 2 2N6517, 2N6520 350 BASE Collector - Base Voltage VCBO Vdc PNP 2N6515 250 1 2N6517, 2N6520 350 EMITTER Emitter - Base Voltage VEBO Vdc 2N6515, 2N6517 6.0 2N6520 5.0 Base Current IB 250 mAdc TO-92 Collector Current - Continuous IC 500 mAdc CASE 29 Total Device Dissipation @ TA = 25°C PD 625 mW STYLE 1 Derate above 25°C 5.0 mW/°C 1 Total Device Dissipation @ TC = 25°C PD 1.5 W 1 2 2 Derate above 25°C 12 mW/°C 3 3 STRAIGHT LEAD BENT LEAD Operating and Storage Junction TJ, Tstg -55 to +150 °C BULK PACK TAPE & REEL Temperature Range AMMO PACK THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Thermal Resis

1.6. 2n6520.pdf Size:237K _secos

2N652
2N652
2N6520 -0.5 A, -350 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ? High voltage transistors TO-92 G H Collector J ?? Millimeter REF. A D Min. Max. A 4.40 4.70 B B 4.30 4.70 ?? C 12.70 - K D 3.30 3.81 Base E 0.36 0.56 F 0.36 0.51 ?? E C F G 1.27 TYP. H 1.10 - Emitter J 2.42 2.66 K 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Collector to Base Voltage VCBO -350 V Collector to Emitter Voltage VCEO -350 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -0.5 A Collector Power Dissipation PC 0.625 W Thermal resistance, junction to ambient R?JA 200 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION Collector to Base Breakdown Volt

1.7. 2n6515-7_9_2n6520.pdf Size:214K _cdil

2N652
2N652
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRANSISTORS ABSOLUTE MAXIMUM RATINGS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL 2N6515 2N6516 2N6517 UNIT 2N6519 2N6520 VCEO Collector Emitter Voltage 250 300 350 V VCBO Collector Base Voltage 250 300 350 V VEBO Emitter Base Voltage NPN-------------------6------------------ V PNP-------------------5------------------ V IC Collector Current Continuous 500 mA IB Base Current (Continuous) 250 mA PD Total Power Dissipation @ Ta=25?C 625 mW Derate Above 25?C 5.0 mW/?C Tstg Operating And Storage Junction -55 to +150 ?C Temperature Range THERMAL RESISTANCE Rth(j-a) Junction to ambient 200 ?C/W Rth(j-c) Junction to case 83.3 ?C/W ELECTRICAL CHARACTERISTICS (Ta=25?C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION MIN MAX UNIT BVCEO*

See also transistors datasheet: 2N6513 , 2N6514 , 2N6515 , 2N6516 , 2N6517 , 2N6518 , 2N6519 , 2N651A , BD139 , 2N6520 , 2N6521 , 2N6522 , 2N6523 , 2N6524 , 2N6525 , 2N6526 , 2N6527 .

Keywords

 2N652 Datasheet  2N652 Design 2N652 MOSFET 2N652 Power
 2N652 RoHS Compliant 2N652 Service 2N652 Triacs 2N652 Semiconductor
 2N652 Database 2N652 Innovation 2N652 IC 2N652 Electricity

 

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com