2N6551 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N6551

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 2

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 75

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of 2N6551 transistor: TO202

2N6551 Equivalent Transistors - Cross-Reference Search

2N6551 PDF document for downloads:

1.1. 2n6551_2n6552_2n6553_2n6554_2n6555_2n6556.pdf Size:91K _central

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See also transistors datasheet: 2N6543 , 2N6544 , 2N6545 , 2N6546 , 2N6547 , 2N6548 , 2N6549 , 2N655 , 2N5551 , 2N6552 , 2N6553 , 2N6554 , 2N6555 , 2N6556 , 2N6557 , 2N6558 , 2N6559 .

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