2N6560 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N6560

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 220

Maximum collector-base voltage |Ucb|, V: 450

Maximum collector-emitter voltage |Uce|, V: 450

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 10

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 10

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of 2N6560 transistor: TO3

2N6560 Equivalent Transistors - Cross-Reference Search

2N6560 PDF document for downloads:

1.1. 2n6560.pdf Size:11K _semelab

2N6560 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 450V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 450 V IC(CONT) 10 A hFE @ 2/5 (VCE / IC) 10 40 - ft 10M Hz PD 220 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable

5.1. 2n583_2n584_2n640_2n641_2n642_2n643_2n644_2n645_2n656_2n696.pdf Size:298K _rca

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5.2. 2n6569.pdf Size:144K _mospec

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5.3. 2n6561.pdf Size:12K _semelab

2N6561 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 300V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 300 V IC(CONT) 10 A hFE @ 2/10 (VCE / IC) 10 50 - ft 15M Hz PD 220 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliabl

5.4. 2n6569.pdf Size:117K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6569 DESCRIPTION Ў¤ With TO-3 package Ў¤ Complement to type 2N6594 Ў¤ Wide area of safe operation APPLICATIONS Ў¤ Designed for low voltage amplifier power switching applications PINNING PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IE IEM PC Tj Tstg PARAMETER Open base CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage HAN INC Emitter-base voltage Collector current Collector current-peak Base current Emitter current Emitter current-peak SEM GE OND IC TOR UC VALUE 45 40 5 12 24 5 17 34 UNIT V V V A A A A A W Ўж Ўж Open collector Collector power dissipation Junction temperature Storage temperature TC=25Ўж 100 200 -65~200

See also transistors datasheet: 2N6553 , 2N6554 , 2N6555 , 2N6556 , 2N6557 , 2N6558 , 2N6559 , 2N656 , 2N2907 , 2N6561 , 2N6562 , 2N6563 , 2N6566 , 2N6567 , 2N6569 , 2N656A , 2N656S .

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