2N6654B Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N6654B

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 188

Maximum collector-base voltage |Ucb|, V: 400

Maximum collector-emitter voltage |Uce|, V: 350

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 12

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 25

Collector capacitance (Cc), pF: 300

Forward current transfer ratio (hFE), min: 10

Noise Figure, dB: -

Package of 2N6654B transistor: TO3

2N6654B Equivalent Transistors - Cross-Reference Search

2N6654B PDF document for downloads:

4.1. 2n6654.pdf Size:12K _semelab

2N6654 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 350V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 350 V IC(CONT) 20 A hFE @ 15/10 (VCE / IC) 10 - ft 75M Hz PD 150 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable

4.2. 2n6654.pdf Size:116K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage capability Ў¤ Fast switching speeds Ў¤ Low saturation voltage APPLICATIONS Ў¤ Switcing regulators Ў¤ Inverters Ў¤ Solenoid and relay drivers Ў¤ Deflection circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6654 MAXIMUN RATINGS(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Fig.1 simplified outline (TO-3) and symbol Collector-base voltage IN Collector-emitter voltage Emitter-base voltage HAN C SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE 500 350 6 20 30 UNIT V V V A A W Ўж Ўж Open collector Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature Tc=25Ўж 150 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.

5.1. 2n6383-85_2n6648-49_2n6650.pdf Size:146K _mospec

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5.2. 2n6659.pdf Size:18K _semelab

2N6659 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL 8.89 (0.35) ENHANCEMENT MODE 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) MOS TRANSISTOR 4.19 (0.165) 4.95 (0.195) 0.89 max. FEATURES (0.035) 12.70 (0.500) 7.75 (0.305) min. 8.51 (0.335) • Switching Regulators dia. • Converters 5.08 (0.200) typ. • Motor Drivers 2.54 2 (0.100) 1 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45? TO–39 METAL PACKAGE Underside View PIN 1 – Source PIN 3 – Drain PIN 2 – Gate CASE – Drain ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C unless otherwise stated) VDS Drain – Source Voltage 35V VGS Gate – Source Voltage ±20V ID Drain Current @ TCASE = 25°C 1.4A ID Drain Current @ TCASE = 100°C 1A IDM Pulsed Drain Current * 3A PD Power Dissipation @ TCASE = 25°C 6.25W PD Power Dissipation @ TCASE = 100°C 2.5W Tj Operating Junction Temperature Range –55 to 150°C Tstg Storage Temperature Range –55 to 150°C TL Lead Temperature (1/16” from case for 10 sec.) 300°C * Pu

5.3. 2n6655.pdf Size:11K _semelab

2N6655 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 400V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 400 V IC(CONT) 20 A hFE @ 15/10 (VCE / IC) 10 - ft 75M Hz PD 150 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable

5.4. 2n6653.pdf Size:11K _semelab

2N6653 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 300V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications. TO3 (TO204AA) PINOUTS 1 – Base 2 – Emitter Case - Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 300 V IC(CONT) 20 A hFE @ 5/15 (VCE / IC) 10 - ft 15M Hz PD 175 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable a

5.5. 2n6653.pdf Size:116K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage capability Ў¤ Fast switching speeds Ў¤ Low saturation voltage APPLICATIONS Ў¤ Switcing regulators Ў¤ Inverters Ў¤ Solenoid and relay drivers Ў¤ Deflection circuits PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector DESCRIPTION 2N6653 MAXIMUN RATINGS(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO IC ICM PT Tj Tstg PARAMETER Fig.1 simplified outline (TO-3) and symbol Collector-base voltage IN Collector-emitter voltage Emitter-base voltage HAN C SEM GE Open base CONDITIONS Open emitter OND IC TOR UC VALUE 350 300 6 20 30 UNIT V V V A A W Ўж Ўж Open collector Collector current Collector current-peak Total power dissipation Junction temperature Storage temperature Tc=25Ўж 150 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.

See also transistors datasheet: 2N6653-2 , 2N6653-3 , 2N6653A , 2N6653B , 2N6654 , 2N6654-1 , 2N6654-2 , 2N6654A , BC327 , 2N6655 , 2N6655-1 , 2N6655-2 , 2N6655A , 2N6655B , 2N6665 , 2N6666 , 2N6667 .

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