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CXT591E Transistor (IC) Datasheet. Cross Reference Search. CXT591E Equivalent

Type Designator: CXT591E

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 1.2

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 60

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF: 10

Forward current transfer ratio (hFE), min: 200

Noise Figure, dB: -

Package of CXT591E transistor: SOT89

CXT591E Transistor Equivalent Substitute - Cross-Reference Search

CXT591E PDF doc:

1.1. cxt591e.pdf Size:528K _central

CXT591E
CXT591E

CXT591E www.centralsemi.com SURFACE MOUNT SILICON DESCRIPTION: PNP TRANSISTOR The CENTRAL SEMICONDUCTOR CXT591E is a silicon PNP transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current, general purpose amplifier applications. MARKING: FULL PART NUMBER SOT-89 CASE MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS Collect

See also transistors datasheet: CXT3090L , CXT3150 , CXT3410 , CXT3820 , CXT491E , CXT5401E , CXT5551E , CXT5551HC , 2N4403 , CXT7090L , CXT7410 , CXT7820 , RN2609 , CTLM3410-M832D , CTLM3474-M832D , CTLM7410-M832D , CTLT3410-M621 .

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