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CTLT8099-M322S Transistor (IC) Datasheet. Cross Reference Search. CTLT8099-M322S Equivalent

Type Designator: CTLT8099-M322S

Marking code: 89C

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 1.45

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 0.5

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 150

Collector capacitance (Cc), pF: 6

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of CTLT8099-M322S transistor: TLM322S

CTLT8099-M322S Transistor Equivalent Substitute - Cross-Reference Search

CTLT8099-M322S PDF:

1.1. ctlt8099-m322s.pdf Size:500K _central

CTLT8099-M322S
CTLT8099-M322S

CTLT8099-M322S www.centralsemi.com SURFACE MOUNT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CTLT8099-M322S is a silicon transistor manufactured by the epitaxial planar process, epoxy molded in a low profile, 2x2mm TLM™ surface mount package, designed for general purpose amplification and switching in energy efficient applications. MARKING CODE: 89C APPLICAT

5.1. ctlt853-m833.pdf Size:596K _central

CTLT8099-M322S
CTLT8099-M322S

CTLT853-M833 www.centralsemi.com SURFACE MOUNT HIGH CURRENT DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CTLT853-M833 is a high performance 6.0A High Current NPN Transistor designed for applications where small size and operational efficiency are prime requirements. With a maximum power dissipation of 4.5W, and a very small package footprint, this device is 80%

See also transistors datasheet: CXT7820 , RN2609 , CTLM3410-M832D , CTLM3474-M832D , CTLM7410-M832D , CTLT3410-M621 , CTLT5551-M832D , CTLT7410-M621 , BD139 , CTLT853-M833 , CTLT953-M833 , CTLT953-M833S , CV7723 , CV7723L-O , CV7723-O , CV7724 , CV7724-O .

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