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ISD1447AS1 Transistor (IC) Datasheet. Cross Reference Search. ISD1447AS1 Equivalent

Type Designator: ISD1447AS1

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc), W: 0.6

Maximum Collector-Base Voltage |Vcb|, V: 30

Maximum Collector-Emitter Voltage |Vce|, V: 25

Maximum Emitter-Base Voltage |Veb|, V: 4

Maximum Collector Current |Ic max|, A: 1

Max. Operating Junction Temperature (Tj), °C: 150

Transition Frequency (ft), MHz: 100

Collector Capacitance (Cc), pF:

Forward Current Transfer Ratio (hFE), min: 55

Noise Figure, dB: -

Package: SC72

ISD1447AS1 Transistor Equivalent Substitute - Cross-Reference Search

ISD1447AS1 PDF:

1.1. isd1447as1.pdf Size:235K _isahaya

ISD1447AS1
ISD1447AS1

 〈SMALL-SIGNAL TRANSISTOR〉 ISD1447AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit:mm ISD1447AS1 is a silicon NPN epitaxial type transistor designed 4.0 for 2 to 3.5W output low frequency power amplify application. Complementary with ISB1035AS1. FEATURE 0.1 ●High collector current. ICM= 1.5A ●High

See also transistors datasheet: KZT849 , KZT851 , KZT853 , ISC3581AS1 , ISC4356AS1 , ISC6046AU1 , ISC6053AM1 , ISC6053AU1 , S9012 , IT120 , IT120A , ISC3242AS1 , ISC3244AS1 , ISC3247AS1 , ISC3249AS1 , KZT3906 , KZT4401 .

Search Terms:

 ISD1447AS1 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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