2N6718 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N6718

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 2

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 100

Maximum emitter-base voltage |Ueb|, V: 4

Maximum collector current |Ic max|, A: 2

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 80

Noise Figure, dB: -

Package of 2N6718 transistor: TO226

2N6718 Equivalent Transistors - Cross-Reference Search

2N6718 PDF document for downloads:

1.1. 2n6716_2n6717_2n6718_2n6728_2n6729_2n6730.pdf Size:50K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.2. 2n6716_2n6717_2n6718.pdf Size:27K _diodes

NPN SILICON PLANAR 2N6716 2N6717 MEDIUM POWER TRANSISTORS 2N6718 ISSUE 1 – MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T ° i T T T ° ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I V I i V V I I V I II I µ V V I µ V 8 V I V V I µ i I µ V V I II i V V I I i V I I I i V V I V V T V I i 8 8 8 I V V T I V V i I V V T i i I V V T II V V i I i i I i µ D I ?

5.1. 2n6714_2n6715_2n6726_2n6727.pdf Size:63K _central

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

5.2. 2n6714_2n6715.pdf Size:26K _diodes

NPN SILICON PLANAR 2N6714 MEDIUM POWER TRANSISTORS 2N6715 ISSUE 1 – MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T IT II V I V V II i V I V V i V I V V I I i II I Di i i T ° i T T T ° ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). T IT DITI I I II V V I I V I II i V V I I V I i V V I I V I II I µ V V I µ V V I i I µ V V I II i V V I I i V I i V V I V V T V I i I V V T I V V i I V V T i i I V V T II V V i I i i I i µ D I ?

5.3. 2n6717.pdf Size:28K _no

NPN SILICON PLANAR 2N6716 2N6717 MEDIUM POWER TRANSISTORS 2N6718 ISSUE 1 – MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T ° i T T T ° ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I V I i V V I I V I II I µ V V I µ V 8 V I V V I µ i I µ V V I II i V V I I i V I I I i V V I V V T V I i 8 8 8 I V V T I V V i I V V T i i I V V T II V V i I i i I i µ D I ?

5.4. 2n6714_2n6715_2n6716.pdf Size:43K _bocasemi

IS/ISO 9002 IS / IECQC 700000 Lic# QSC/L- 000019.2 IS / IECQC 750100 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer 2N6714 TO-237 Plastic Package 2N6715 2N6716 Boca Semiconductor Corp. BSC http://www.bocasemi.com NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. 1 = EMITTER 2 = BASE 1 2 3 3 = COLLECTOR ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS 2N6714 2N6715 2N6716 Rating Symbol 2N6714 2N6715 2N6716 Units 2N6714 2N6715 2N6716 2N6714 2N6715 2N6716 2N6714 2N6715 2N6716 Collector-Emitter Voltage VCEO 30 40 60 V Collector-Base Voltage VCBO 40 50 60 V Emitter-Base Voltage VEBO - 5.0 - V Collector Current – Continuous IC - 1.5 - A Power Dissipation @ Ta=25?C PD - 850 - mW Operating And Storage Junction Tj,Tstg -55 to +150 ? C Temperature Range C E B 2N6714 2N6715 2N6716 E

See also transistors datasheet: 2N6710 , 2N6711 , 2N6712 , 2N6713 , 2N6714 , 2N6715 , 2N6716 , 2N6717 , AC127 , 2N6719 , 2N672 , 2N6720 , 2N6721 , 2N6722 , 2N6723 , 2N6724 , 2N6725 .

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