2N6732 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N6732

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 2

Maximum collector-base voltage |Ucb|, V: 100

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 100

Noise Figure, dB: -

Package of 2N6732 transistor: TO226

2N6732 Equivalent Transistors - Cross-Reference Search

2N6732 PDF document for downloads:

1.1. 2n6732.pdf Size:26K _diodes

PNP SILICON PLANAR 2N6732 MEDIUM POWER TRANSISTOR ISSUE 1 – MARCH 94 T 8 V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T ° i T T T ° ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). T I T IT DITI II V V I µ I V I II i V 8 V I I V I i V V I I V I II I µ V 8 V I i I µ V V I II i V V I I i V I i T V V I V V V I i I V V T i I V V T i i I V V T II V V i I i i I i µ D I ?

5.1. 2n6716_2n6717_2n6718_2n6728_2n6729_2n6730.pdf Size:50K _central

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5.2. 2n6731.pdf Size:26K _diodes

NPN SILICON PLANAR 2N6731 MEDIUM POWER TRANSISTOR ISSUE 1 – MARCH 94 T 8 V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V 8 V i V I V V I I i II I Di i i T ° i T T T ° ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). T I T IT DITI II V V I µ I V I II i V 8 V I I V I i V V I I V I II I µ V 8 V I i I µ V V I II i V V I I i V I i T V V I V V V I i I V V T i I V V T i i I V V T II V V i I i i I i µ D I ?

5.3. 2n6728_2n6729_2n6730.pdf Size:27K _diodes

PNP SILICON PLANAR 2N6728 2N6729 MEDIUM POWER TRANSISTORS 2N6730 ISSUE 1 – MARCH 94 T V I V i I E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. T 8 IT II V I V 8 V II i V I V 8 V i V I V V I I i II I Di i i T ° i T T T ° ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). T 8 IT DITI I I I II V 8 V I I V I II i V 8 V I I V I i V V I I V I II I µ V V I µ V 8 V I V V I µ i I µ V V I II i V V I I i V I I I i V V I V V T V I i 8 8 8 I V V T I V V i I V V T i i I V V T II V V i

5.4. 2n6738_2n6739_2n6740.pdf Size:153K _bocasemi

A Boca Semiconductor Corp BSC http://www.bocasemi.com A Boca Semiconductor Corp BSC http://www.bocasemi.com A Boca Semiconductor Corp BSC http://www.bocasemi.com

5.5. 2n6739.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6739 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for use in high-voltage, high-speed , power switc- hing in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regu- lators, inverters, DC-DC and converter. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage-V = -1.5V 550 V CEV BE V Collector-Emitter Voltage-V = -1.5V 400 V CEX BE V Collector-Emitter Voltage 350 V CEO V Emitter-Base Voltage 8 V EBO I Collector Current-Continuous 8 A C I Collector Current-Peak 10 A CM IB Base Current-Continuous 4 A Collector Power Dissipation PC 100 W T =25? C Tj Junction Temperature 150 ? Tstg Storage Ttemperature Range -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARA

5.6. 2n6738_2n6739_2n6740.pdf Size:60K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6738 2N6739 2N6740 DESCRIPTION ·With TO-220 package ·High voltage ratings ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Suited for 115 and 220V switchmode applications such as switching regulators, Inverters and DC-DC converters PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N6738 450 VCBO Collector-base voltage 2N6739 Open emitter 550 V 2N6740 650 2N6738 300 VCEO Collector-emitter voltage 2N6739 Open base 350 V 2N6740 400 VEBO Emitter-base voltage Open collector 8 V IC Collector current 8 A ICM Collector current-peak 10 A IB Base current 4 A PT Total power dissipation TC=25? 100 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal r

5.7. 2n6738.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6738 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for use in high-voltage, high-speed , power switc- hing in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regu- lators, inverters, DC-DC and converter. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage-V = -1.5V 450 V CEV BE V Collector-Emitter Voltage-V = -1.5V 350 V CEX BE V Collector-Emitter Voltage 300 V CEO V Emitter-Base Voltage 8 V EBO I Collector Current-Continuous 8 A C I Collector Current-Peak 10 A CM IB Base Current-Continuous 4 A Collector Power Dissipation PC 100 W T =25? C Tj Junction Temperature 150 ? Tstg Storage Ttemperature Range -65~150 ? THERMAL CHARACTERISTICS SYMBOL PARA

See also transistors datasheet: 2N6725 , 2N6726 , 2N6727 , 2N6728 , 2N6729 , 2N673 , 2N6730 , 2N6731 , 2SA733 , 2N6733 , 2N6734 , 2N6735 , 2N6736 , 2N6737 , 2N6738 , 2N6739 , 2N674 .

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