All Transistors. TH430 Datasheet

 

TH430 Transistor. Datasheet pdf. Equivalent

Type Designator: TH430

Marking Code: TH430

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 330 W

Maximum Collector-Base Voltage |Vcb|: 110 V

Maximum Collector-Emitter Voltage |Vce|: 55 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 40 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 30 MHz

Collector Capacitance (Cc): 250 pF

Forward Current Transfer Ratio (hFE), MIN: 23

Noise Figure, dB: -

Package: M177

TH430 Transistor Equivalent Substitute - Cross-Reference Search

TH430 PDF doc:

1.1. th430.pdf Size:144K _update

TH430
TH430

SD1728 (TH430) RF & Microwave transistors HF SSB application Features ■ 13.56MHz ■ 44V ■ Gold metallization ■ Common emitter ■ POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar M177 Epoxy sealed transistor designed primarily for SSB and Industrial HF pplications. This device utilizes emitter ballasting for improved ruggedness and

1.2. sd1728_th430.pdf Size:149K _st

TH430
TH430

SD1728 (TH430) RF & Microwave transistors HF SSB application Features 13.56MHz 44V Gold metallization Common emitter POUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar M177 Epoxy sealed transistor designed primarily for SSB and Industrial HF pplications. This device utilizes emitter ballasting for improved ruggedness and reliabilit

Datasheet: TFNA06 , TFNA14 , TFNH10 , TG50 , TG51 , TG52 , TG53 , TG55 , MJE13003 , TH513 , TH560 , TH562 , THA15 , THA42TTD03 , THA92TTD03 , TIP110A , TIP112L-TN3 .

 


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