2N677A Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N677A

Material of transistor: Ge

Polarity: PNP

Maximum collector power dissipation (Pc), W: 90

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 15

Maximum junction temperature (Tj), °C: 100

Transition frequency (ft), MHz: 0.2

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2N677A transistor: TO3

2N677A Equivalent Transistors - Cross-Reference Search

2N677A PDF document for downloads:

5.1. 2n6770_irf450.pdf Size:144K _international_rectifier

PD - 90330F REPETITIVE AVALANCHE AND dv/dt RATED IRF450 HEXFET?TRANSISTORS JANTX2N6770 THRU-HOLE (TO-204AA/AE) JANTXV2N6770 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF450 500V 0.400? 12A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- tance combined with high transconductance; superior re- TO-3 verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- lished advantages of MOSFETs such as voltage control, Features: very fast switching, ease of paralleling and temperature Repetitive Avalanche Ratings stability of the electrical parameters. Dynamic dv/dt Rating They are well suited for applications such as switching Hermetically Sealed power supplies, motor controls, inverters, choppers, audio Simple Drive Require

5.2. 2n6764_2n6766_2n6768_2n6770.pdf Size:64K _omnirel

2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES •Low RDS(on) •Ease of Paralleling •Qualified to MIL-PRF-19500/543 DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. PRIMARY ELECTRICAL CHARACTERISTICS @ TC= 25°C PART NUMBER VDS, Volts RDS(on) ID, Amps 2N6764 100 .055 38 2N6766 200 .085 30 2N6768 400 .30 14 2N6770 500 .40 12 SCHEMATIC MECHANICAL OUTLINE 1.197 1.53 REF. 1.177 0.675 0.875 0.440 0.655 0.188 R.

5.3. 2n6771_6772_6773.pdf Size:82K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N6771/6772/6773 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 300V(Min)- 2N6771 = 350V(Min)- 2N6772 = 400V(Min)- 2N6773 ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for use in off-line power supplies and is also well suited for use in a wide range of inverter or converter circuits and pulse-width-modulated regulators. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT 2N6771 450 VCEV Collector-Emitter Voltage 2N6772 550 V VBE= -1.5V 2N6773 650 2N6771 300 VCEO(SUS) Collector-Emitter Voltage 2N6772 350 V 2N6773 400 VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 10 A IBB Base Current-Continuous 4 A PC Collector Power Dissipation@TC=25? 150 W TJ Junction Temperature 200 ? Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MA

See also transistors datasheet: 2N676 , 2N677 , 2N6771 , 2N6772 , 2N6773 , 2N6774 , 2N6775 , 2N6776 , BC148 , 2N677B , 2N677C , 2N678 , 2N678A , 2N678B , 2N678C , 2N679 , 2N68 .

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