2N6834 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N6834

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 125

Maximum collector-base voltage |Ucb|, V: 850

Maximum collector-emitter voltage |Uce|, V: 450

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 5

Maximum junction temperature (Tj), °C: 200

Transition frequency (ft), MHz: 15

Collector capacitance (Cc), pF: 200

Forward current transfer ratio (hFE), min: 8

Noise Figure, dB: -

Package of 2N6834 transistor: TO3

2N6834 Equivalent Transistors - Cross-Reference Search

2N6834 PDF document for downloads:

1.1. 2n6834.pdf Size:122K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6834 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IBB Base Current-Continuous 4 A IBM Base Current-Peak 8 A PC Collector Power Dissipation@TC=25? 125 W TJ Junction Temperature 200 ? Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMB

5.1. 2n6836re.pdf Size:393K _motorola

Order this document MOTOROLA by 2N6836/D SEMICONDUCTOR TECHNICAL DATA 2N6836 Designer's? Data Sheet 15 AMPERE Switchmode Series Ultra-Fast NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 450 VOLTS 175 WATTS These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line–operated switchmode applications. • Switching Regulators • Inverters • Motor Controls • Deflection Circuits • Fast Turn–Off Times 30 ns Inductive Fall Time — 75_C (Typ) CASE 1–07 TO–204AA 50 ns Inductive Crossover Time — 75_C (Typ) (TO–3) 600 ns Inductive Storage Time — 75_C (Typ) • Operating Temperature Range –65 to +200_C • 100_C Performance Specified for: Reverse–Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Leakage Currents IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIII IIIIIII

5.2. 2n6833.pdf Size:198K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6833 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage 850 V CEV V Collector-Emitter Voltage 450 V CEO(SUS) V Emitter-Base Voltage 6 V EBO IC Collector Current-Continuous 5 A I Collector Current-Peak 10 A CM I Base Current-Continuous 4 A B I Base Current-Peak 8 A BM P Collector Power Dissipation@T =25? 80 W C C TJ Junction Temperature 150 ? Tstg Storage Temperature -65~150 ? THERMAL CHARA

5.3. 2n6836.pdf Size:117K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6836 DESCRIPTION Ў¤ With TO-3 package Ў¤ High voltage ,high speed APPLICATIONS Ў¤ Switching regulators Ў¤ Inverters Ў¤ Motor controls Ў¤ Deflection circuits PINNING PIN 1 2 3 Base Emitter Fig.1 simplified outline (TO-3) and symbol Collector DESCRIPTION Absolute maximum ratings(Ta=Ўж ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PC Tj Tstg PARAMETER CONDITIONS Open emitter Collector-base voltage Collector-emitter voltage IN Emitter-base voltage Collector current HAN C SEM GE Open base OND IC TOR UC VALUE 850 450 6 15 20 10 15 UNIT V V V A A A A W Ўж Ўж Open collector Collector current-peak Base current Base current-peak Collector power dissipation Junction temperature Storage temperature TC=25Ўж 175 200 -65~200 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1.0 UNIT Ўж /W

5.4. 2n6837.pdf Size:175K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6837 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 30 A IBB Base Current-Continuous 15 A IBM Base Current-Peak 20 A PC Collector Power Dissipation@TC=25? 250 W TJ Junction Temperature 200 ? Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Therm

5.5. 2n6835.pdf Size:79K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N6835 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IBB Base Current-Continuous 6 A IBM Base Current-Peak 12 A PC Collector Power Dissipation@TC=25? 150 W TJ Junction Temperature 200 ? Storage Temperature -65~200 ? Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Thermal

See also transistors datasheet: 2N678A , 2N678B , 2N678C , 2N679 , 2N68 , 2N680 , 2N68-13 , 2N6833 , BC327 , 2N6835 , 2N6836 , 2N6837 , 2N694 , 2N695 , 2N696 , 2N696A , 2N696S .

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