All Transistors. NSBA123EF3T5G Datasheet

 

NSBA123EF3T5G Transistor. Datasheet pdf. Equivalent

Type Designator: NSBA123EF3T5G

Marking Code: P

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: SOT1123-3

NSBA123EF3T5G Transistor Equivalent Substitute - Cross-Reference Search

NSBA123EF3T5G Datasheet PDF:

1.1. nsba123ef3.pdf Size:109K _update

NSBA123EF3T5G
NSBA123EF3T5G

MUN2131, MMUN2131L, MUN5131, DTA123EE, DTA123EM3, NSBA123EF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 2.2 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (B

2.1. nsba123edxv6.pdf Size:112K _update

NSBA123EF3T5G
NSBA123EF3T5G

MUN5131DW1, NSBA123EDXV6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 2.2 kW http://onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias

3.1. nsba123jf3.pdf Size:117K _update

NSBA123EF3T5G
NSBA123EF3T5G

MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 This series of digital transistors is designed to replace a single COLLECTOR (OUTPUT) device and its external resistor bias network. The Bias Resistor PIN 1 R1 Transistor (BRT) co

3.2. nsba123jdxv6.pdf Size:94K _update

NSBA123EF3T5G
NSBA123EF3T5G

MUN5135DW1, NSBA123JDXV6, NSBA123JDP6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monol

3.3. nsba123tf3.pdf Size:150K _update

NSBA123EF3T5G
NSBA123EF3T5G

MUN2138, MMUN2138L, MUN5138, DTA123TE, DTA123TM3, NSBA123TF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 8 kW http://onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (

3.4. nsba123jdp6.pdf Size:94K _update

NSBA123EF3T5G
NSBA123EF3T5G

MUN5135DW1, NSBA123JDXV6, NSBA123JDP6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 47 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monol

3.5. nsba123tdp6.pdf Size:118K _update

NSBA123EF3T5G
NSBA123EF3T5G

NSBA123TDP6 Dual PNP Bias Resistor Transistors R1 = 2.2 kW, R2 = 8 kW PNP Transistors with Monolithic Bias http://onsemi.com Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor (3) (2) (1) Transistor (BRT) contains a single transistor with a monolithic bias network consis

Datasheet: NSBA115EDXV6T1G , NSBA115TDP6 , NSBA115TDP6T5G , NSBA115TF3 , NSBA115TF3T5G , NSBA123EDXV6 , NSBA123EDXV6T1G , NSBA123EF3 , 2N2222A , NSBA123JDP6 , NSBA123JDP6T5G , NSBA123JDXV6 , NSBA123JDXV6T5G , NSBA123JF3 , NSBA123JF3T5G , NSBA123TDP6 , NSBA123TDP6T5G .

 


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