All Transistors. NSB1706DMW5T1G Datasheet

 

NSB1706DMW5T1G Transistor. Datasheet pdf. Equivalent

Type Designator: NSB1706DMW5T1G

Marking Code: U6

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.26 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT353

NSB1706DMW5T1G Transistor Equivalent Substitute - Cross-Reference Search

NSB1706DMW5T1G Datasheet PDF:

1.1. nsb1706dmw5t1g.pdf Size:113K _update

NSB1706DMW5T1G
NSB1706DMW5T1G

NSB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with http://onsemi.com a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its

1.2. nsb1706dmw5t1-d.pdf Size:117K _onsemi

NSB1706DMW5T1G
NSB1706DMW5T1G

NSB1706DMW5T1G Dual Bias Resistor Transistor NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with http://onsemi.com a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its ex

Datasheet: NSBA123JDXV6 , NSBA123JDXV6T5G , NSBA123JF3 , NSBA123JF3T5G , NSBA123TDP6 , NSBA123TDP6T5G , NSBA123TF3 , NSBA123TF3T5G , AC128 , NSB4904DW1T1G , NSB9435T1G , NSBA124EDP6 , NSBA124EDP6T5G , NSBA124EDXV6 , NSBA124EDXV6T1G , NSBA124EF3 , NSBA124EF3T5G .

 


NSB1706DMW5T1G
  NSB1706DMW5T1G
  NSB1706DMW5T1G
  NSB1706DMW5T1G
 
NSB1706DMW5T1G
  NSB1706DMW5T1G
  NSB1706DMW5T1G
  NSB1706DMW5T1G
 

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