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NSB9435T1G Transistor (IC) Datasheet. Cross Reference Search. NSB9435T1G Equivalent

Type Designator: NSB9435T1G

Marking code: 9435R

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 1.56

Maximum collector-base voltage |Ucb|, V: 45

Maximum collector-emitter voltage |Uce|, V: 30

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 3

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 110

Collector capacitance (Cc), pF: 100

Forward current transfer ratio (hFE), min: 90

Noise Figure, dB: -

Package of NSB9435T1G transistor: SOT223

NSB9435T1G Transistor Equivalent Substitute - Cross-Reference Search

NSB9435T1G PDF:

1.1. nsb9435t1g.pdf Size:143K _update

NSB9435T1G
NSB9435T1G

NSB9435T1G, NSV9435T1G High Current Bias Resistor Transistor PNP Silicon http://onsemi.com Features  Collector -Emitter Sustaining Voltage - POWER BJT VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc IC = 3.0 AMPERES  High DC Current Gain - BVCEO = 30 VOLTS hFE = 125 (Min) @ IC = 0.8 Adc VCE(sat) = 0.275 VOLTS = 90 (Min) @ IC = 3.0 Adc  Low Collector -Emitter Saturation Voltag

1.2. nsb9435t1-d.pdf Size:112K _onsemi

NSB9435T1G
NSB9435T1G

NSB9435T1G High Current Bias Resistor Transistor PNP Silicon Features http://onsemi.com Collector -Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc POWER BJT High DC Current Gain - IC = 3.0 AMPERES hFE = 125 (Min) @ IC = 0.8 Adc BVCEO = 30 VOLTS = 90 (Min) @ IC = 3.0 Adc VCE(sat) = 0.275 VOLTS Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.275

See also transistors datasheet: NSBA123JF3 , NSBA123JF3T5G , NSBA123TDP6 , NSBA123TDP6T5G , NSBA123TF3 , NSBA123TF3T5G , NSB1706DMW5T1G , NSB4904DW1T1G , S9014 , NSBA124EDP6 , NSBA124EDP6T5G , NSBA124EDXV6 , NSBA124EDXV6T1G , NSBA124EF3 , NSBA124EF3T5G , NSBA124XDXV6 , NSBA124XDXV6T1G .

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