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2N697 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N697

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.6

Maximum collector-base voltage |Ucb|, V: 60

Maximum collector-emitter voltage |Uce|, V: 40

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 35

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2N697 transistor: TO39

2N697 Equivalent Transistors - Cross-Reference Search

2N697 PDF document for downloads:

1.1. 2n697.pdf Size:305K _rca

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1.2. 2n6975_2n6976_2n6977_2n6978.pdf Size:36K _harris_semi

2N6975, 2N6976, S E M I C O N D U C T O R 2N6977, 2N6978 5A, 400V and 500V N-Channel IGBTs April 1995 April 1995 Features Package JEDEC TO-204AA • 5A, 400V and 500V BOTTOM VIEW • VCE(ON) 2V COLLECTOR EMITTER (FLANGE) • TFI 1µs, 0.5µs • Low On-State Voltage GATE • Fast Switching Speeds • High Input Impedance Terminal Diagram Applications N-CHANNEL ENHANCEMENT MODE C • Power Supplies • Motor Drives • Protection Circuits G Description E The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) PACKAGING AVAILABILITY designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated PART NUMBER PACKAGE BRAND directly from low-power integrated circuits. 2N6975 TO-204AA 2N6976 TO-204AA 2N6977 TO-204AA 2N6978 TO-204AA NOTE: When ordering, use the entire part number. Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified.

1.3. 2n696_2n697.pdf Size:61K _microsemi

TECHNICAL DATA NPN MEDIUM POWER SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/99 Devices Qualified Level 2N696 2N697 JAN 2N696S 2N697S MAXIMUM RATINGS Ratings Symbol Value Units Collector-Base Voltage 60 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Total Power Dissipation @ T = 250C (1) 0.6 W A PT @ T = 250C (2) 2.0 W C 0 Operating & Storage Junction Temperature Range TJ Tstg -65 to +200 C , THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit 0 TO-5* Thermal Resistance, Junction-to-Case 0.075 C/mW R?JC 1) Derate linearly 4.0 mW/0C for T > 250C A 2) Derate linearly 13.3 mW/0C for T > 250C C *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage V(BR)CER Vdc RBE = 10 ?, IC = 100 mAdc 40 Collector-Base Cutoff Current VCB = 100 Vdc ICBO µAdc 10 VCB = 30 Vdc

See also transistors datasheet: 2N6835 , 2N6836 , 2N6837 , 2N694 , 2N695 , 2N696 , 2N696A , 2N696S , 8050 , 2N697A , 2N697S , 2N698 , 2N6987 , 2N6988 , 2N699 , 2N699A , 2N699B .

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