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NSVMUN5316DW1T1G Transistor (IC) Datasheet. Cross Reference Search. NSVMUN5316DW1T1G Equivalent

Type Designator: NSVMUN5316DW1T1G

Marking Code: 16

Material of Transistor: Si

Polarity: NPN*PNP

Maximum Collector Power Dissipation (Pc), W: 0.26

Maximum Collector-Base Voltage |Vcb|, V: 50

Maximum Collector-Emitter Voltage |Vce|, V: 50

Maximum Emitter-Base Voltage |Veb|, V:

Maximum Collector Current |Ic max|, A: 0.1

Max. Operating Junction Temperature (Tj), °C: 150

Transition Frequency (ft), MHz:

Collector Capacitance (Cc), pF:

Forward Current Transfer Ratio (hFE), min: 160

Noise Figure, dB: -

Package: SOT363

NSVMUN5316DW1T1G Transistor Equivalent Substitute - Cross-Reference Search

NSVMUN5316DW1T1G PDF:

1.1. nsvmun5312dw1t3g.pdf Size:110K _onsemi

NSVMUN5316DW1T1G
NSVMUN5316DW1T1G

MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6 Complementary Bias Resistor Transistors www.onsemi.com R1 = 22 kW, R2 = 22 kW NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transisto

1.2. nsvmun5316dw1t1g.pdf Size:80K _onsemi

NSVMUN5316DW1T1G
NSVMUN5316DW1T1G

MUN5316DW1, NSBC143TPDXV6 Complementary Bias Resistor Transistors R1 = 4.7 kW, R2 = 8 kW http://onsemi.com NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network This series of digital transistors is designed to replace a single (3) (2) (1) device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a mon

1.3. nsvmun5314dw1t3g.pdf Size:103K _onsemi

NSVMUN5316DW1T1G
NSVMUN5316DW1T1G

MUN5314DW1, NSBC114YPDXV6, NSBC114YPDP6 Complementary Bias Resistor Transistors http://onsemi.com R1 = 10 kW, R2 = 47 kW PIN CONNECTIONS NPN and PNP Transistors with Monolithic Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor R1 R2 Transistor (BRT) contains a single

1.4. nsvmun5312dw1t2g.pdf Size:110K _onsemi

NSVMUN5316DW1T1G
NSVMUN5316DW1T1G

MUN5312DW1, NSBC124EPDXV6, NSBC124EPDP6 Complementary Bias Resistor Transistors www.onsemi.com R1 = 22 kW, R2 = 22 kW NPN and PNP Transistors with Monolithic PIN CONNECTIONS Bias Resistor Network (3) (2) (1) This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transisto

See also transistors datasheet: NSVMUN5215DW1T1G , NSVMUN5233DW1T3G , NSVMUN5236T1G , NSVMUN5111DW1T3G , NSVMUN5113DW1T3G , NSVMUN5312DW1T2G , NSVMUN5312DW1T3G , NSVMUN5314DW1T3G , 8050 , NSVMUN5331DW1T1G , NSVMUN5332DW1T1G , NSVMUN5333DW1T1G , NSVMUN5333DW1T3G , NSVMUN5334DW1T1G , NSVPZTA92T1G , NSVBCP53-16T3G , NSVBCP56-10T3G .

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BJT: NSS40302PDR2G | NSS40301MZ4T3G | NSS40301MZ4T1G | NSS40301MDR2G | NSS40300MZ4T3G | NSS40300MZ4T1G | NSS20201MR6 | NSS20201LT1G | NSS20200LT1G | NSS20101J | NSVBC858CLT1G | NSVBC858BLT1G | NSVBC857CWT1G | NSVBC857BTT1G | NSVBC857BLT3G | NSVBC850CLT1G | NSVBC850BLT1G | NSVBC848CLT1G | NSVBC848CDW1T1G | NSVBC848BWT1G |

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