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NSVBCW32LT1G Transistor (IC) Datasheet. Cross Reference Search. NSVBCW32LT1G Equivalent

Type Designator: NSVBCW32LT1G

Marking Code: D2

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc), W: 0.23

Maximum Collector-Base Voltage |Vcb|, V: 32

Maximum Collector-Emitter Voltage |Vce|, V: 32

Maximum Emitter-Base Voltage |Veb|, V: 5

Maximum Collector Current |Ic max|, A: 0.1

Max. Operating Junction Temperature (Tj), °C: 150

Transition Frequency (ft), MHz:

Collector Capacitance (Cc), pF: 4

Forward Current Transfer Ratio (hFE), min: 200

Noise Figure, dB: -

Package: SOT23

NSVBCW32LT1G Transistor Equivalent Substitute - Cross-Reference Search

NSVBCW32LT1G PDF:

1.1. nsvbcw32lt1g.pdf Size:96K _onsemi

NSVBCW32LT1G
NSVBCW32LT1G

BCW32LT1G General Purpose Transistors NPN Silicon Features http://onsemi.com • NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 COLLECTOR Qualified and PPAP Capable 3 • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Unit EMITTER Collector-E

4.1. nsvbcw68glt1g.pdf Size:65K _onsemi

NSVBCW32LT1G
NSVBCW32LT1G

BCW68GL General Purpose Transistor PNP Silicon Features • NSV Prefix for Automotive and Other Applications Requiring www.onsemi.com Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 MAXIMUM RATINGS EMITTER Rating Symbol Value Unit Collector-Emitter Vo

5.1. nsvbcp53-16t3g.pdf Size:69K _onsemi

NSVBCW32LT1G
NSVBCW32LT1G

BCP53 Series PNP Silicon Epitaxial Transistors This PNP Silicon Epitaxial transistor is designed for use in audio amplifier applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications. http://onsemi.com • High Current • NPN Complement is BCP56 MEDIUM POWER HIGH • The SOT-223 Package can be soldered using wave or reflow

5.2. nsvbcx17lt1g.pdf Size:61K _onsemi

NSVBCW32LT1G
NSVBCW32LT1G

BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN General Purpose http://onsemi.com Transistors Voltage and Current are Negative for PNP Transistors SOT-23 Features (TO-236) CASE 318-08 • S and NSV Prefix for Automotive and Other Applications Requiring STYLE 6 Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable PNP NPN • These Device

5.3. nsvbcp56-10t3g.pdf Size:69K _onsemi

NSVBCW32LT1G
NSVBCW32LT1G

BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount http://onsemi.com applications. Features MEDIUM POWER NPN SILICON • High Current: 1.0 A HIGH CURRENT TRANSISTOR • The SOT-223 package can be solder

5.4. nsvbcp69t1g.pdf Size:122K _onsemi

NSVBCW32LT1G
NSVBCW32LT1G

BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http://onsemi.com mount applications. Features MEDIUM POWER • High Current: IC = -1.0 A PNP SILICON • The SOT-223 Package Can Be Soldered

See also transistors datasheet: NSVMUN5332DW1T1G , NSVMUN5333DW1T1G , NSVMUN5333DW1T3G , NSVMUN5334DW1T1G , NSVPZTA92T1G , NSVBCP53-16T3G , NSVBCP56-10T3G , NSVBCP69T1G , BD140 , NSVBCW68GLT1G , NSVMSD42WT1G , NSVMUN2112T1G , NSVMUN2212T1G , NSVMUN2233T1G , NSVMUN2237T1G , NSV40501UW3T2G , NSV60100DMTWTBG .

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