2N720A Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N720A

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.5

Maximum collector-base voltage |Ucb|, V: 120

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 7

Maximum collector current |Ic max|, A: 0.5

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 50

Collector capacitance (Cc), pF: 15

Forward current transfer ratio (hFE), min: 40

Noise Figure, dB: -

Package of 2N720A transistor: TO18

2N720A Equivalent Transistors - Cross-Reference Search

2N720A PDF document for downloads:

1.1. 2n720a.pdf Size:520K _rca

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1.2. 2n720a.pdf Size:49K _st

2N720A ® EPITAXIAL PLANAR NPN HIGH VOLTAGE GENERAL PURPOSE DESCRIPTION The 2N790A is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 120 V V Collector-Emitter Voltage (I = 0) 80 V CEO B V Emitter-Base Voltage (I = 0) 7 V EBO C IC Collector Current 500 mA Ptot 0.5 W Total Dissipation at Tamb ? 25 oC 1.8 W at TC ? 25 oC o T Storage Temperature -55 to 175 C stg o Tj Max. Operating Junction Temperature 175 C 1/4 December 2002 2N720A THERMAL DATA o Rthj-case Thermal Resistance Junction-Case Max 83.3 C/W o R Thermal Resistance Junction-Ambient Max 300 C/W thj-amb ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off VCB = 90 V 10 nA Curren

1.3. 2n720a_.pdf Size:55K _st

2N720A ® EPITAXIAL PLANAR NPN HIGH VOLTAGE GENERAL PURPOSE DESCRIPTION The 2N790A is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 120 V V Collector-Emitter Voltage (I = 0) 80 V CEO B V Emitter-Base Voltage (I = 0) 7 V EBO C IC Collector Current 500 mA Ptot 0.5 W Total Dissipation at Tamb ? 25 oC 1.8 W at TC ? 25 oC o T Storage Temperature -55 to 175 C stg o Tj Max. Operating Junction Temperature 175 C 1/4 December 2002 Obsolete Product(s) - Obsolete Product(s) 2N720A THERMAL DATA o Rthj-case Thermal Resistance Junction-Case Max 83.3 C/W o R Thermal Resistance Junction-Ambient Max 300 C/W thj-amb ELECTRICAL CHARACTERISTICS (T = 25 oC unless otherwise specified) case Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO

1.4. 2n720a.pdf Size:10K _semelab

2N720A Dimensions in mm (inches). Bipolar NPN Device in a 5.84 (0.230) 5.31 (0.209) Hermetically sealed TO18 4.95 (0.195) 4.52 (0.178) Metal Package. Bipolar NPN Device. VCEO = 100V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.2A 2.54 (0.100) All Semelab hermetically sealed products Nom. can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 3 1 2 TO18 (TO206AA) PINOUTS 1 – Emitter 2 – Base 3 – Collector Parameter Test Conditions Min. Typ. Max. Units VCEO* 100 V IC(CONT) 0.2 A hFE @ 10/0.15 (VCE / IC) 40 120 - ft 50M Hz PD 0.5 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes n

1.5. 2n1893_2n720a.pdf Size:55K _microsemi

TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/182 Devices Qualified Level JAN 2N1893 2N720A JANTX 2N1893S JANTXV MAXIMUM RATINGS Ratings Symbol All Devices Units Collector-Emitter Voltage 80 Vdc VCEO Collector-Base Voltage 120 Vdc VCBO 7.0 Vdc Emitter-Base Voltage VEBO 100 Vdc TO-18 (TO-206AA)* Collector-Emitter Voltage (R = 10 ?) VCER BE 2N720A Collector Current I 500 mAdc C 2N720A 2N1893, S Total Power Dissipation @ T = +250C (1) 0.5 0.8 A PT W @ T = +250C (2) 1.8 3.0 C 0 Operating & Storage Junction Temperature Range TJ, Tsrg -65 to +200 C THERMAL CHARACTERISTICS Characteristics Symbol 2N720A 2N1893, S Unit TO-5* 0 Thermal Resistance, Junction-to-Case 97 58 C/W R?JC 2N1893, 2N1893S 1) Derate linearly 2.86 mW/0C for 2N720A, 4.57 mW/0C for 2N1893, S T > 250C A 2) Derate linearly 10.3 mW/0C for 2N720A, 17.2 mW/0C for 2N1893, S T > 250C C *See appendix A for package outline

See also transistors datasheet: 2N717 , 2N717A , 2N718 , 2N718A , 2N719 , 2N719A , 2N72 , 2N720 , 2SC114 , 2N721 , 2N721A , 2N722 , 2N722A , 2N725 , 2N726 , 2N727 , 2N728 .

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