2N728 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2N728

Material of transistor: Si

Polarity: NPN

Maximum collector power dissipation (Pc), W: 0.3

Maximum collector-base voltage |Ucb|, V: 15

Maximum collector-emitter voltage |Uce|, V: 15

Maximum emitter-base voltage |Ueb|, V: 3

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 70

Collector capacitance (Cc), pF: 16

Forward current transfer ratio (hFE), min: 20

Noise Figure, dB: -

Package of 2N728 transistor: TO18

2N728 Equivalent Transistors - Cross-Reference Search

2N728 PDF document for downloads:

1.1. 2n7288d-r-h.pdf Size:46K _harris_semi

2N7288D, 2N7288R S E M I C O N D U C T O R 2N7288H REGISTRATION PENDING Radiation Hardened Available as FRS244 (D, R, H) N-Channel Power MOSFETs November 1994 Features Package • 9A, 250V, RDS(on) = 0.415? TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si) - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) - Performance Permits Limited Use to 3000KRAD(Si) • Gamma Dot - Survives 3E9RAD(Si)/sec at 80% BVDSS Typically - Survives 2E12 Typically If Current Limited to IDM • Photo Current - 7.0nA Per-RAD(Si)/sec Typically • Neutron - Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 • Single Event - Typically Survives 1E5ions/cm2 Having an LET ? 35MeV/mg/cm2 and a Range ? 30µm at 80% BVDSS Symbol Description The Harris Semiconductor Sector has designed a series of SECOND GENERA- TION hardened power MOSFETs of both N and P channel enhancement types with rati

See also transistors datasheet: 2N720A , 2N721 , 2N721A , 2N722 , 2N722A , 2N725 , 2N726 , 2N727 , AC128 , 2N729 , 2N73 , 2N730 , 2N731 , 2N734 , 2N734A , 2N735 , 2N735A .

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