All Transistors. SD1448 Datasheet

 

SD1448 Transistor. Datasheet pdf. Equivalent

Type Designator: SD1448

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 31.8 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 1.6 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 860 MHz

Collector Capacitance (Cc): 20 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: M122

SD1448 Transistor Equivalent Substitute - Cross-Reference Search

SD1448 Datasheet PDF:

1.1. sd1448.pdf Size:328K _update

SD1448
SD1448

SD1448 (TCC598) SD1448 RF & MICROWAVE TRANSISTORS Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR UHF TV/LINEAR APPLICATIONS .860 MHz .25 VOLTS .COMMON EMITTER .GOLD METALLIZATION .CLASS A LINEAR OPERATION .P = 4.0 W MIN. WITH 7.0 dB GAIN OUT .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1448 TCC598 PIN CONNECTION DESCRIPTION The SD1448 is a silicon

1.2. sd1448.pdf Size:71K _st

SD1448
SD1448

SD1448 (TCC598) RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS .860 MHz .25 VOLTS .COMMON EMITTER .GOLD METALLIZATION .CLASS A LINEAR OPERATION .P 4.0 W MIN. WITH 7.0 dB GAIN = OUT .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1448 TCC598 PIN CONNECTION DESCRIPTION The SD1448 is a silicon NPN bipolar device spe- cifically designed for high linearity applications i

5.1. sd1446.pdf Size:276K _update

SD1448

HG RF POWER TRANSISTOR SD1446 Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR D DESCRIPTION 1.Collector A 2.EMITTER F The SD1446 is a 12.5 V Class C epitaxial 3.BASE q C silicon NPN planar transistor designed primarily 4.EMITTER U1 B 5.FIN for land mobile transmitter applications. This device utilizes emitter ballasting and is w2 M C c extremely stable and

5.2. sd1449.pdf Size:106K _st

SD1448
SD1448

SD1449 (TCC597) RF & MICROWAVE TRANSISTORS UHF TV\LINEAR APPLICATIONS .860 MHz .20 VOLTS .COMMON EMITTER .GOLD METALLIZATION .CLASS A LINEAR OPERATION .P 1.0 W MIN. WITH 10.0 dB GAIN = OUT .280 4L STUD (M122) epoxy sealed ORDER CODE BRANDING SD1449 TCC597 PIN CONNECTION DESCRIPTION The SD1449 is a silicon NPN bipolar device spe- cifically designed for high linearity applications

5.3. sd1446.pdf Size:386K _st

SD1448
SD1448

SD1446 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY Figure 1. Package 50 MHz 12.5 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION POUT = 70 W MIN. WITH 10 dB GAIN DESCRIPTION .380 4L FL (M113) The SD1446 is a 12.5 V Class C epitaxial silicon epoxy sealed NPN planar transistor designed primarily for land mobile transmitter applications

5.4. 2sd1446.pdf Size:63K _panasonic

SD1448
SD1448

Power Transistors 2SD1446 Silicon NPN triple diffusion planar type Darlington For power amplification Unit: mm 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features ? 3.1 0.1 High foward current transfer ratio hFE High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw 1.3 0.2 1.4 0.1 +0.2 Absolute Maximum Ratings (TC=25?C) 0.5 0.1

5.5. 2sd1441.pdf Size:102K _panasonic

SD1448
SD1448

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.6. 2sd1440.pdf Size:102K _panasonic

SD1448
SD1448

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

5.7. isd1447as1.pdf Size:235K _isahaya

SD1448
SD1448

 〈SMALL-SIGNAL TRANSISTOR〉 ISD1447AS1 FOR LOW FREQUENCY POWOR AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit:mm ISD1447AS1 is a silicon NPN epitaxial type transistor designed 4.0 for 2 to 3.5W output low frequency power amplify application. Complementary with ISB1035AS1. FEATURE 0.1 ●High collector current. ICM= 1.5A ●High

5.8. sd1441.pdf Size:26K _advanced-semi

SD1448

SD1441 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1441 is a12.5 V epitaxial silicon NPN plannar transistor. Designed primarily for VHF communication in the 175 MHz frequency. PACKAGE STYLE .500 6L FLG C A 1 3 FEATURES: 2x ØN FULL R • 175 MHz 12.5 V D • PG = 5.0 dB at 150 W/175 MHz 4 2 • Omnigold™ Metalization System B E .725/18,42 • Common

5.9. 2sd1441.pdf Size:75K _jmnic

SD1448
SD1448

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1441 DESCRIPTION ·With TO-3PN package ·Built-in damper diode ·High voltage ,high reliability ·High speed switching ·Wide area of safe operation APPLICATIONS ·For horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 sim

5.10. 2sd1444_2sd1444a.pdf Size:126K _inchange_semiconductor

SD1448
SD1448

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Low collector saturation voltage Ў¤ High speed switching Ў¤ High collector current Ў¤ Complement to type 2SB953/953A APPLICATIONS Ў¤ Power amplifiers Ў¤ Low voltage switching PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter 2SD1444 2SD1444A Fig.1 simpli

5.11. 2sd1441.pdf Size:118K _inchange_semiconductor

SD1448
SD1448

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1441 DESCRIPTION Ў¤ With TO-3PN package Ў¤ Built-in damper diode Ў¤ High voltage ,high reliability Ў¤ High speed switching Ў¤ Wide area of safe operation APPLICATIONS Ў¤ For horizontal deflection output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplif

5.12. 2sd1445_2sd1445a.pdf Size:167K _inchange_semiconductor

SD1448
SD1448

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1445 2SD1445A DESCRIPTION Ў¤ With TO-220Fa package Ў¤ Complement to type 2SB948/948A Ў¤ High speed switching Ў¤ Low collector saturation voltage APPLICATIONS Ў¤ For power amplification,power switching and low-voltage switching applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Ў

5.13. 2sd1440.pdf Size:254K _inchange_semiconductor

SD1448
SD1448

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1440 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCES Collector

Datasheet: SD1405 , SD1407 , SD1420 , SD1422 , SD1429 , SD1434 , SD1439 , SD1446 , A1015 , SD1455 , SD1458 , SD1459 , SD1460 , SD1462 , SD1480 , SD1487 , SD1489 .

 


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