All Transistors. SD1458 Datasheet

 

SD1458 Transistor. Datasheet pdf. Equivalent

Type Designator: SD1458

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 140 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 225 MHz

Collector Capacitance (Cc): 80 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: SOT119

SD1458 Transistor Equivalent Substitute - Cross-Reference Search

SD1458 Datasheet PDF:

1.1. sd1458.pdf Size:56K _update

SD1458
SD1458

SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS .170 - 230 MHz .28 VOLTS .IMD -55 dB .COMMON EMITTER .GOLD METALLIZATION .INTERNAL INPUT MATCHING .HIGH SATURATED POWER CAPABILITY .500 6LFL (M111) .DESIGNED FOR HIGH POWER LINEAR epoxy sealed OPERATION ORDER CODE BRANDING .P 14 W MIN. WITH 14.0 dB GAIN OUT = SD1458 SD1458 PIN CONNECTION DESCRIPTION The SD1458 is a gol

1.2. 2sd1458.pdf Size:48K _st

SD1458
SD1458

SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS .170 - 230 MHz .28 VOLTS .IMD -55 dB .COMMON EMITTER .GOLD METALLIZATION .INTERNAL INPUT MATCHING .HIGH SATURATED POWER CAPABILITY .500 6LFL (M111) .DESIGNED FOR HIGH POWER LINEAR epoxy sealed OPERATION ORDER CODE BRANDING .P 14 W MIN. WITH 14.0 dB GAIN OUT = SD1458 SD1458 PIN CONNECTION DESCRIPTION The SD1458 is a gold m

1.3. sd1458.pdf Size:49K _st

SD1458
SD1458

SD1458 RF & MICROWAVE TRANSISTORS TV\LINEAR APPLICATIONS .170 - 230 MHz .28 VOLTS .IMD -55 dB .COMMON EMITTER .GOLD METALLIZATION .INTERNAL INPUT MATCHING .HIGH SATURATED POWER CAPABILITY .500 6LFL (M111) .DESIGNED FOR HIGH POWER LINEAR epoxy sealed OPERATION ORDER CODE BRANDING .P 14 W MIN. WITH 14.0 dB GAIN OUT = SD1458 SD1458 PIN CONNECTION DESCRIPTION The SD1458 is a gold m

1.4. 2sd1458.pdf Size:37K _panasonic

SD1458
SD1458

Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Ab

1.5. 2sd1458_e.pdf Size:41K _panasonic

SD1458
SD1458

Transistor 2SD1458 Silicon NPN epitaxial planer type For low-frequency amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Ab

Datasheet: SD1420 , SD1422 , SD1429 , SD1434 , SD1439 , SD1446 , SD1448 , SD1455 , 431 , SD1459 , SD1460 , SD1462 , SD1480 , SD1487 , SD1489 , SD1490 , SD1536-03 .

 


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BJT: SD1733 | SD1730 | SD1729 | SD1728 | SD1726 | SD1540 | SD1536-03 | SD1490 | SD1489 | SD1487 | SD1480 | SD1462 | SD1460 | SD1459 | SD1458 | SD1455 | SD1448 | SD1446 | SD1439 | SD1434 |

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