All Transistors. SD1480 Datasheet

 

SD1480 Transistor. Datasheet pdf. Equivalent

Type Designator: SD1480

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 270 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Transition Frequency (ft): 175 MHz

Collector Capacitance (Cc): 250 pF

Forward Current Transfer Ratio (hFE), MIN: 5

Noise Figure, dB: -

Package: M111

SD1480 Transistor Equivalent Substitute - Cross-Reference Search

SD1480 Datasheet PDF:

1.1. sd1480.pdf Size:161K _update

SD1480

SD1480 SILICON BIPOLAR NPN RF POWER TRANSISTOR ___________ ___________________________________ The silicon bipolar n-p-n transistor. Common Emitter from 136 to 175 MHz Applications Features: Gold metallization with barrier realizes very stable characteristics and excellent lifetime Diffused emitter ballast resistors Internal Input Matching Output power: 125 W Power gain: 9,

1.2. sd1480.pdf Size:78K _st

SD1480
SD1480

SD1480 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS .136 - 175 MHz .28 VOLTS .EFFICIENCY 55% .COMMON EMITTER .GOLD METALLIZATION .INTERNAL INPUT MATCHING .P 125 W MIN. WITH 9.2 dB GAIN OUT = .500 6LFL (M111) epoxy sealed ORDER CODE BRANDING SD1480 SD1480 PIN CONNECTION DESCRIPTION The SD1480 is a common emitter 28 V Class C epitaxial silicon NPN planar transistor designed primari

1.3. 2sd1480.pdf Size:46K _panasonic

SD1480
SD1480

Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Unit: mm Complementary to 2SB1052 10.0 0.2 4.2 0.2 5.5 0.2 2.7 0.2 Features High forward current transfer ratio hFE which has satisfactory linearity ? 3.1 0.1 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 1

1.4. 2sd1480.pdf Size:269K _inchange_semiconductor

SD1480
SD1480

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD1480 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB1052 APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMB

Datasheet: SD1439 , SD1446 , SD1448 , SD1455 , SD1458 , SD1459 , SD1460 , SD1462 , 2N2219 , SD1487 , SD1489 , SD1490 , SD1536-03 , SD1540 , SD1726 , SD1728 , SD1729 .

 


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BJT: SD1733 | SD1730 | SD1729 | SD1728 | SD1726 | SD1540 | SD1536-03 | SD1490 | SD1489 | SD1487 | SD1480 | SD1462 | SD1460 | SD1459 | SD1458 | SD1455 | SD1448 | SD1446 | SD1439 | SD1434 |

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