2N834-51
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2N834-51
Material of transistor: Si
Polarity: NPN
Maximum collector power dissipation (Pc), W: 0.3
Maximum collector-base voltage |Ucb|, V: 40
Maximum collector-emitter voltage |Uce|, V: 30
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.2
Maximum junction temperature (Tj), °C: 175
Transition frequency (ft), MHz: 350
Collector capacitance (Cc), pF: 4
Forward current transfer ratio (hFE), min: 25
Noise Figure, dB: - Package of 2N834-51
transistor: TO51
2N834-51
Equivalent Transistors - Cross-Reference Search 2N834-51
PDF document for downloads:
5.1. 2n834.pdf Size:259K _rca |
| ÿþ |
See also transistors datasheet: 2N826
, 2N827
, 2N828
, 2N828A
, 2N829
, 2N83
, 2N834
, 2N834-46
, 2N3773
, 2N834A
, 2N835
, 2N835-46
, 2N835-51
, 2N837
, 2N838
, 2N839
, 2N83A
. Keywords| 2N834-51
Datasheet | 2N834-51
Datenblatt | 2N834-51
RoHS | 2N834-51
Distributor | | 2N834-51
Application Notes | 2N834-51
Component | 2N834-51
Circuit | 2N834-51
Schematic | | 2N834-51
Equivalent | 2N834-51
Cross Reference | 2N834-51
Data Sheet | 2N834-51
Fiche Technique |
|