All Transistors Datasheet



Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
2SA1020
  2SA1020
  2SA1020
  2SA1020
 
2SA1020
  2SA1020
  2SA1020
  2SA1020
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
2SA1020 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SA1020 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SA1020

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.9

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 2

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 40

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of 2SA1020 transistor: TO92

2SA1020 Equivalent Transistors - Cross-Reference Search

2SA1020 PDF doc:

1.1. 2sa1020.pdf Size:167K _toshiba

2SA1020
2SA1020
2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit: mm Power Switching Applications Low Collector saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 ?s (typ.) Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -2 A Base current IB -0.2 A JEDEC TO-92MOD Collector power dissipation PC 900 mW JEITA ? Junction temperature Tj 150 C Storage temperature range Tstg -55 to 150 C TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even i

1.2. 2sa1020-d.pdf Size:93K _onsemi

2SA1020
2SA1020
2SA1020 One Watt High Current PNP Transistor Features This is a Pb-Free Device* http://onsemi.com MAXIMUM RATINGS VOLTAGE AND CURRENT Rating Symbol Value Unit ARE NEGATIVE FOR Collector-Emitter Voltage VCE 50 Vdc PNP TRANSISTORS Collector-Base Voltage VCB 50 Vdc Emitter-Base Voltage VEB 5.0 Vdc COLLECTOR Collector Current - Continuous IC 2.0 Adc 2 Total Power Dissipation @ TA = 25C PD 900 mW Derate above 25C 5.0 mW/C 3 PNP BASE Total Power Dissipation @ TC = 25C PD 1.5 W Derate above 25C 12 mW/C 1 Operating and Storage Junction Temperature TJ, Tstg -55 to C Range +150 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 125 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum TO-92 (TO-226) Ratings are stress ratings only. Functional operation above the Recommended CASE 29-10 1 1 Operating Conditions is not implied.

1.3. 2sa1020.pdf Size:634K _utc

2SA1020
2SA1020
UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR ? DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. ? FEATURES *Low collector saturation voltage: VCE(SAT)=-0.5V(MAX) (IC=-1A) *High speed switching time: tSTG=1.0?s(TYP) *Complement to UTC 2SC2655 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1020L-x-AE3-R 2SA1020G-x-AE3-R SOT-23 E B C Tape Reel 2SA1020L-x-AB3-R 2SA1020G-x-AB3-R SOT-89 B C E Tape Reel 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B TO-92NL E C B Tape Box 2SA1020L-x-T9N-K 2SA1020G-x-T9N-K TO-92NL E C B Bulk Note: Pin Assignment: B: Base C: Collector E: Emitter ? MARKING INFORMATION PACKAGE MARKING A10 L: Lead Free SOT-23 G: Halogen Free 1 SOT-89 TO-92NL www.unisonic.com.tw 1 of 4 Copyright © 2014 Unisonic Technologies Co., Ltd QW-R211-007.F 1 2SA1020 PNP SILICON TRANSISTOR ? ABSOLUT

1.4. 2sa1020.pdf Size:421K _secos

2SA1020
2SA1020
2SA1020 -2A, -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES N ? Power amplifier applications G H ?Emitter ? Collector ? Base CLASSIFICATION OF hFE(1) M J L Product-Rank 2SA1020-O 2SA1020-Y A D Range 70-140 120-240 B K E F C Collector ?? Millimeter Millimeter ?? REF. REF. Min. Max. Min. Max. Base A 5.50 6.50 H 1.70 2.05 B 8.00 9.00 J 2.70 3.20 C 12.70 14.50 K 0.85 1.15 ?? D 4.50 5.30 L 1.60 Max Emitter E 0.35 0.65 M 0.00 0.40 F 0.30 0.51 N 4.00 Min G 1.50 TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -2 A Collector Power Dissipation PC 900 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTIC

1.5. 2sa1020.pdf Size:237K _lge

2SA1020
2SA1020
2SA1020 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 1 4.700 Features 5.100 Power amplifier applications 7.800 8.200 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.600 Symbol Parameter Value Units 0.800 VCBO Collector-Base Voltage -50 V 0.350 0.550 VCEO Collector-Emitter Voltage -50 V 13.800 14.200 VEBO Emitter-Base Voltage -5 V IC Collector Current –Continuous -2 A PC Collector Power Dissipation 900 mW 1.270 TYP 2.440 TJ Junction Temperature 150 ? 2.640 Dimensions in inches and (millimeters) 0.000 1.600 Tstg Storage Temperature -55-150 ? 0.300 0.350 0.450 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 3.700 4.100 1.280 1.580 Parameter Symbol Test conditions MIN TYP MAX UNIT 4.000 Collector-base breakdown voltage V(BR)CBO IC =-100µA,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC =-10mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100µA,IC=0 -5 V Co

1.6. 2sa1020_to-92mod.pdf Size:237K _lge

2SA1020
2SA1020
2SA1020 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Power amplifier applications MAXIMUM RATINGS (TA=25? unless otherwise noted) 8.400 8.800 Symbol Parameter Value Units 0.900 1.100 VCBO Collector-Base Voltage -50 V 0.400 0.600 VCEO Collector-Emitter Voltage -50 V 13.800 VEBO Emitter-Base Voltage -5 V 14.200 IC Collector Current –Continuous -2 A PC Collector Power Dissipation 900 mW 1.500 TYP 2.900 Dimensions in inches and (millimeters) TJ Junction Temperature 150 ? 3.100 0.000 1.600 Tstg Storage Temperature -55-150 ? 0.380 0. ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 400 4.700 0.500 5.100 1.730 Parameter Symbol Test conditions MIN TYP MAX UNIT 2.030 4.000 Collector-base breakdown voltage V(BR)CBO -50 V IC =-100ВµA,IE=0 Collector-emitter breakdown voltage V(BR)CEO -50 V IC =-10mA,IB=0 Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100В

1.7. 2sa1020.pdf Size:429K _wietron

2SA1020
2SA1020
2SA1020 PNP 2 1 3 2 3 1. EMITTER 2. COLLECTOR 1 3. BASE TO-92MOD Value V CEO -50 -50 -5 -2,0 900 1 7.25 138 2SA1020=A1020 -10 -50 u -0.1 -40 -0.1 u -5.0 1 WEITRON http://www.weitron.com.tw 2SA1020 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Typ Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - - (IC=-500 mAdc, VCE=-2.0 Vdc) hFE (1) 240 70 - - (IC=-1500 mAdc, VCE=-2.0 Vdc) - hFE (2) 40 Collector-Emitter Saturation Voltage VCE(sat) - Vdc - -0.5 (IC=-1000 mAdc, IB=-50mAdc) Base-Emitter Saturation Voltage VBE(sat) - - -1.2 Vdc (IC=-1000 mAdc, IB=-50mAdc) Current-Gain-Bandwidth Product - fT - 100 MHz (IC=-500 mAdc, VCE=-2 Vdc) Collector Output Capacitance Cob - -40 PF - V =-10V, I =0, f= 1MHZ CB E Switching Time - Turn-on time ton 0.1 - IB2 OUTPUT 20us IB2 INPUT tstg Storage time 1.0 us - - IB1 IB1 - IB1 = =0.05A IB2 t - f 0.1 Fall time - VCC =-30

See also transistors datasheet: 2SA1016K , 2SA1016KF , 2SA1016KG , 2SA1016KH , 2SA1017 , 2SA1018 , 2SA1019 , 2SA102 , 8050 , 2SA1020O , 2SA1020Y , 2SA1021 , 2SA1022 , 2SA1023 , 2SA1024 , 2SA1025 , 2SA1026 .

Keywords

 2SA1020 Datasheet  2SA1020 Datenblatt  2SA1020 RoHS  2SA1020 Distributor
 2SA1020 Application Notes  2SA1020 Component  2SA1020 Circuit  2SA1020 Schematic
 2SA1020 Equivalent  2SA1020 Cross Reference  2SA1020 Data Sheet  2SA1020 Fiche Technique

 

(C) 2005 All Right reserved Bipolar | | MOSFET | | IGBT | | Manufacturer Sites | | SMD Code | | Packages | | Contact alltransistors[@]gmail.com