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2SA1024
  2SA1024
  2SA1024
 
2SA1024
  2SA1024
  2SA1024
 
2SA1024
  2SA1024
 
 
List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
2SA1024 All Transistors Datasheet. BJT, Power MOSFET, IGBT, IC Catalog
 

2SA1024 Transistor (IC) Datasheet. Cross Reference Search. 2SA1024 Equivalent

Type Designator: 2SA1024

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.4

Maximum collector-base voltage |Ucb|, V: 400

Maximum collector-emitter voltage |Uce|, V: 360

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), Β°C: 150

Transition frequency (ft), MHz: 15

Collector capacitance (Cc), pF: 4

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of 2SA1024 transistor: TO18

2SA1024 Equivalent Transistors - Cross-Reference Search

 

2SA1024 PDF doc:

4.1. 2sa1020.pdf Size:167K _toshiba

2SA1024
2SA1024
2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit: mm Power Switching Applications • Low Collector saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 1.0 ?s (typ.) • Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -2 A Base current IB -0.2 A JEDEC TO-92MOD Collector power dissipation PC 900 mW JEITA ? Junction temperature Tj 150 °C Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even i

4.2. 2sa1020-d.pdf Size:93K _onsemi

2SA1024
2SA1024
2SA1020 One Watt High Current PNP Transistor Features • This is a Pb-Free Device* http://onsemi.com MAXIMUM RATINGS VOLTAGE AND CURRENT Rating Symbol Value Unit ARE NEGATIVE FOR Collector-Emitter Voltage VCE 50 Vdc PNP TRANSISTORS Collector-Base Voltage VCB 50 Vdc Emitter-Base Voltage VEB 5.0 Vdc COLLECTOR Collector Current - Continuous IC 2.0 Adc 2 Total Power Dissipation @ TA = 25°C PD 900 mW Derate above 25°C 5.0 mW/°C 3 PNP BASE Total Power Dissipation @ TC = 25°C PD 1.5 W Derate above 25°C 12 mW/°C 1 Operating and Storage Junction Temperature TJ, Tstg -55 to °C Range +150 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 125 °C/W Thermal Resistance, Junction-to-Case RqJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum TO-92 (TO-226) Ratings are stress ratings only. Functional operation above the Recommended CASE 29-10 1 1 Operating Conditions is not implied.

4.3. 2sa1022.pdf Size:38K _panasonic

2SA1024
2SA1024
Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SC2295 +0.2 2.8 –0.3 +0.25 Features 0.65± 0.15 1.5 –0.05 0.65± 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V 0.1 to 0.3 Collector to emitter voltage VCEO –20 V 0.4± 0.2 Emitter to base voltage VEBO –5 V Collector current IC –30 mA Collector power dissipation PC 200 mW 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 Junction temperature Tj 150 ?C 3:Collector Mini Type Package Storage temperature Tstg –55 ~ +150 ?C Marking symbol : E Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –10V, IE = 0 – 0.1 ΅ A Collector cutoff current ICEO VCE = –20V, IB = 0 –100 ΅ A Emitter cutoff curr

4.4. 2sa1022_e.pdf Size:38K _panasonic

2SA1024
2SA1024
Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SC2295 +0.2 2.8 –0.3 +0.25 Features 0.65± 0.15 1.5 –0.05 0.65± 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –30 V 0.1 to 0.3 Collector to emitter voltage VCEO –20 V 0.4± 0.2 Emitter to base voltage VEBO –5 V Collector current IC –30 mA Collector power dissipation PC 200 mW 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 Junction temperature Tj 150 ?C 3:Collector Mini Type Package Storage temperature Tstg –55 ~ +150 ?C Marking symbol : E Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –10V, IE = 0 – 0.1 ΅ A Collector cutoff current ICEO VCE = –20V, IB = 0 –100 ΅ A Emitter cutoff curr

4.5. 2sa1020.pdf Size:634K _utc

2SA1024
2SA1024
UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR ? DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. ? FEATURES *Low collector saturation voltage: VCE(SAT)=-0.5V(MAX) (IC=-1A) *High speed switching time: tSTG=1.0?s(TYP) *Complement to UTC 2SC2655 ? ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SA1020L-x-AE3-R 2SA1020G-x-AE3-R SOT-23 E B C Tape Reel 2SA1020L-x-AB3-R 2SA1020G-x-AB3-R SOT-89 B C E Tape Reel 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B TO-92NL E C B Tape Box 2SA1020L-x-T9N-K 2SA1020G-x-T9N-K TO-92NL E C B Bulk Note: Pin Assignment: B: Base C: Collector E: Emitter ? MARKING INFORMATION PACKAGE MARKING A10 L: Lead Free SOT-23 G: Halogen Free 1 SOT-89 TO-92NL www.unisonic.com.tw 1 of 4 Copyright Β© 2014 Unisonic Technologies Co., Ltd QW-R211-007.F 1 2SA1020 PNP SILICON TRANSISTOR ? ABSOLUT

4.6. 2sa1029_2sa1030.pdf Size:24K _hitachi

2SA1024
2SA1024
2SA1029, 2SA1030 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO –30 –55 V Collector to emitter voltage VCEO –30 –50 V Emitter to base voltage VEBO –5 –5 V Collector current IC –100 –100 mA Emitter current IE 100 100 mA Collector power dissipation PC 300 300 mW Junction temperature Tj 150 150 ° C Storage temperature Tstg –55 to +150 –55 to +150 ° C Electrical Characteristics (Ta = 25°C) 2SA1029 2SA1030 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO –30 — — –55 — — V IC = –10 ΅ A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO –30 — — –50 — — V IC = –1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO –5 — — –5 — — V IE = –10 ΅ A, IC = 0 breakdown voltage Collector cutoff curre

4.7. 2sa1025_2sa1081_2sa1082.pdf Size:24K _hitachi

2SA1024
2SA1024
2SA1025, 2SA1081, 2SA1082 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC2396, 2SC2543 and 2SC2544 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1025, 2SA1081, 2SA1082 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1025 2SA1081 2SA1082 Unit Collector to base voltage VCBO –60 –90 –120 V Collector to emitter voltage VCEO –60 –90 –120 V Emitter to base voltage VEBO –5 –5 –5 V Collector current IC –100 –100 –100 mA Emitter current IE 100 100 100 mA Collector power dissipation PC 400 400 400 mW Junction temperature Tj 150 150 150 ° C Storage temperature Tstg –55 to +150 –55 to +150 –55 to +150 ° C Electrical Characteristics (Ta = 25°C) 2SA1025 2SA1081 2SA1082 Item Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO –60 — — –90 — — –120 — — V IC = –10 ΅ A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO –60 — — –90 — — –120 — — V IC = –1 mA, breakdown volta

4.8. 2sa1020.pdf Size:421K _secos

2SA1024
2SA1024
2SA1020 -2A, -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of β€œ-C” specifies halogen & lead-free TO-92MOD FEATURES N ? Power amplifier applications G H ?Emitter ? Collector ? Base CLASSIFICATION OF hFE(1) M J L Product-Rank 2SA1020-O 2SA1020-Y A D Range 70-140 120-240 B K E F C Collector ?? Millimeter Millimeter ?? REF. REF. Min. Max. Min. Max. Base A 5.50 6.50 H 1.70 2.05 B 8.00 9.00 J 2.70 3.20 C 12.70 14.50 K 0.85 1.15 ?? D 4.50 5.30 L 1.60 Max Emitter E 0.35 0.65 M 0.00 0.40 F 0.30 0.51 N 4.00 Min G 1.50 TYP. ABSOLUTE MAXIMUM RATINGS (TA = 25Β°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -2 A Collector Power Dissipation PC 900 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 Β°C ELECTRICAL CHARACTERISTIC

4.9. 2sa1021.pdf Size:146K _jmnic

2SA1024
2SA1024
JMnic Product Specification Silicon PNP Power Transistors 2SA1021 DESCRIPTION Β·With TO-126 package Β·High breakdown voltage Β·Large current capacity APPLICATIONS Β·For color TV sound output;converters Inverters applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -1.5 A ICM Collector current-Peak -2.5 A Ta=25? 1.0 PC Collector power dissipation W TC=25? 20 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SA1021 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-1mA; RBE=? -150 V V(BR)CB

4.10. 2sa1021.pdf Size:137K _inchange_semiconductor

2SA1024
2SA1024
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1021 DESCRIPTION Β·With TO-126 package Β·High breakdown voltage Β·Large current capacity APPLICATIONS Β·For color TV sound output;converters Inverters applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -1.5 A ICM Collector current-Peak -2.5 A Ta=25? 1.0 PC Collector power dissipation W TC=25? 20 Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1021 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown vol

4.11. 2sa1020_to-92mod.pdf Size:237K _lge

2SA1024
2SA1024
2SA1020 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE Features 5.800 6.200 Power amplifier applications MAXIMUM RATINGS (TA=25? unless otherwise noted) 8.400 8.800 Symbol Parameter Value Units 0.900 1.100 VCBO Collector-Base Voltage -50 V 0.400 0.600 VCEO Collector-Emitter Voltage -50 V 13.800 VEBO Emitter-Base Voltage -5 V 14.200 IC Collector Current Π²Π‚β€œContinuous -2 A PC Collector Power Dissipation 900 mW 1.500 TYP 2.900 Dimensions in inches and (millimeters) TJ Junction Temperature 150 ? 3.100 0.000 1.600 Tstg Storage Temperature -55-150 ? 0.380 0. ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 400 4.700 0.500 5.100 1.730 Parameter Symbol Test conditions MIN TYP MAX UNIT 2.030 4.000 Collector-base breakdown voltage V(BR)CBO -50 V IC =-100Π’Β΅A,IE=0 Collector-emitter breakdown voltage V(BR)CEO -50 V IC =-10mA,IB=0 Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100Π’

4.12. 2sa1020.pdf Size:237K _lge

2SA1024
2SA1024
2SA1020 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 1 4.700 Features 5.100 Power amplifier applications 7.800 8.200 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.600 Symbol Parameter Value Units 0.800 VCBO Collector-Base Voltage -50 V 0.350 0.550 VCEO Collector-Emitter Voltage -50 V 13.800 14.200 VEBO Emitter-Base Voltage -5 V IC Collector Current Π²Π‚β€œContinuous -2 A PC Collector Power Dissipation 900 mW 1.270 TYP 2.440 TJ Junction Temperature 150 ? 2.640 Dimensions in inches and (millimeters) 0.000 1.600 Tstg Storage Temperature -55-150 ? 0.300 0.350 0.450 ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) 3.700 4.100 1.280 1.580 Parameter Symbol Test conditions MIN TYP MAX UNIT 4.000 Collector-base breakdown voltage V(BR)CBO IC =-100Π’Β΅A,IE=0 -50 V Collector-emitter breakdown voltage V(BR)CEO IC =-10mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-100Π’Β΅A,IC=0 -5 V Co

4.13. 2sa1020.pdf Size:429K _wietron

2SA1024
2SA1024
2SA1020 PNP 2 1 3 2 3 1. EMITTER 2. COLLECTOR 1 3. BASE TO-92MOD Value V CEO -50 -50 -5 -2,0 900 1 7.25 138 2SA1020=A1020 -10 -50 u -0.1 -40 -0.1 u -5.0 1 WEITRON http://www.weitron.com.tw 2SA1020 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Typ Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain - - (IC=-500 mAdc, VCE=-2.0 Vdc) hFE (1) 240 70 - - (IC=-1500 mAdc, VCE=-2.0 Vdc) - hFE (2) 40 Collector-Emitter Saturation Voltage VCE(sat) - Vdc - -0.5 (IC=-1000 mAdc, IB=-50mAdc) Base-Emitter Saturation Voltage VBE(sat) - - -1.2 Vdc (IC=-1000 mAdc, IB=-50mAdc) Current-Gain-Bandwidth Product - fT - 100 MHz (IC=-500 mAdc, VCE=-2 Vdc) Collector Output Capacitance Cob - -40 PF - V =-10V, I =0, f= 1MHZ CB E Switching Time - Turn-on time ton 0.1 - IB2 OUTPUT 20us IB2 INPUT tstg Storage time 1.0 us - - IB1 IB1 - IB1 = =0.05A IB2 t - f 0.1 Fall time - VCC =-30

See also transistors datasheet: 2SA1019 , 2SA102 , 2SA1020 , 2SA1020O , 2SA1020Y , 2SA1021 , 2SA1022 , 2SA1023 , AC128 , 2SA1025 , 2SA1026 , 2SA1027 , 2SA1028 , 2SA1029 , 2SA103 , 2SA1030 , 2SA1031 .

Keywords

 2SA1024 Datasheet  2SA1024 Design 2SA1024 MOSFET 2SA1024 Power
 2SA1024 RoHS Compliant 2SA1024 Service 2SA1024 Triacs 2SA1024 Semiconductor
 2SA1024 Database 2SA1024 Innovation 2SA1024 IC 2SA1024 Electricity

 

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