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2SA1034
  2SA1034
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2SA1034
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2SA1034
  2SA1034
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2SA1034 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SA1034 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SA1034

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 35

Maximum collector-emitter voltage |Uce|, V: 35

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.05

Maksimalna temperatura (Tj), Β°C: 150

Transition frequency (ft), MHz: 280

Collector capacitance (Cc), pF: 3.3

Forward current transfer ratio (hFE), min: 180

Noise Figure, dB: -

Package of 2SA1034 transistor: TO236

2SA1034 Equivalent Transistors - Cross-Reference Search

2SA1034 PDF doc:

1.1. 2sa1034_2sa1035.pdf Size:55K _panasonic

2SA1034
2SA1034
Transistor 2SA1034, 2SA1035 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SC2405 and 2SC2406 Features +0.2 2.8 –0.3 Low noise voltage NV. +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 packing. 3 Absolute Maximum Ratings (Ta=25?C) 2 Parameter Symbol Ratings Unit Collector to 2SA1034 –35 VCBO V base voltage 2SA1035 –55 0.1 to 0.3 Collector to 2SA1034 –35 0.4± 0.2 VCEO V emitter voltage 2SA1035 –55 Emitter to base voltage VEBO –5 V Peak collector current ICP –100 mA 1:Base JEDEC:TO–236 Collector current IC –50 mA 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Marking symbol : F(2SA1034) Storage temperature Tstg –55 ~ +150 ?C H(2SA1035) Electrical Characteristics

4.1. 2sa1579_2sa1514k_2sa1038s.pdf Size:75K _rohm

2SA1034
2SA1034
2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (-120V, -50mA) 2SA1579 / 2SA1514K / 2SA1038S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = -120V) 2SA1579 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S. 1.25 2.1 0.1Min. Each lead has same dimensions ROHM : UMT3 (1) Emitter EIAJ : SC-70 (2) Base JEDEC : SOT-323 (3) Collector 2SA1514K 1.6 2.8 0.3Min. Each lead has same dimensions ROHM : SMT3 (1) Emitter EIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector 2SA1038S 4 2 0.45 2.5 0.5 0.45 5 Taping specifications (1) (2) (3) ROHM : SPT (1) Emitter EIAJ : SC-72 (2) Collector (3) Base Rev.A 1/3 2 1 2.0 1.3 ( ) ( ) 3 ( ) 0.65 0.65 0.3 0.2 0.15 0.9 0.7 0~0.1 1.9 2.9 2 1 ( ) ( ) 3 0.95 0.95 ( ) 0.4 1.1 0.15 0.8 0 to 0.1 3Min. 15Min. 3 ( ) 2SA1579 / 2SA1514K / 2SA1038S Transistors Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Coll

4.2. 2sa1037ak_2sa1576a_2sa1774_2sa933as.pdf Size:100K _rohm

2SA1034
2SA1034
Transistors General Purpose Transistor (*50V, *0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS FFeatures FExternal dimensions (Units: mm) 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S. FStructure Epitaxial planar type PNP silicon transistor (96-89-A32) 198 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows: 199 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FElectrical characteristic curves 200

4.3. 2sa1037ak.pdf Size:138K _rohm

2SA1034
2SA1034
General Purpose Transistor (-50V, -0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 ?Features ?Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658. 1.25 ?Structure 1.6 2.1 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dimensions Each lead has same dimensions (1) Emitter ROHM : SMT3 (1) Emitter ROHM : UMT3 (2) Base EIAJ : SC-59 (2) Base EIAJ : SC-70 (3) Collector (3) Collector Abbreviated symbol : F ? Abbreviated symbol : F ? 2SA1774 2SA2029 (1) 1.2 0.2 0.8 0.2 (2) (3) (2) (3) 0.8 (1) 1.6 0.15Max. 0.1Min. (1) Base (1) Emitter ROHM : VMT3 ROHM : EMT3 (2) Base EIAJ : (2) Emitter EIAJ : SC-75A (3) Collecto (3) Collector Abbreviated symbol : F ? Abbreviated symbol : F ? ? Denotes hFE www.rohm.com 2012.01 - Rev.C 1/3 c 0 2012 ROHM Co., Ltd. All rights reserved. 2 1 2.0 ( ) ( ) 1.9 2.9 3 ( ) 2 1 (

4.4. 2sa854_2sa1036k_2sa1577.pdf Size:101K _rohm

2SA1034
2SA1034
Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units: mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows. 205 Transistors 2SA1036K / 2SA1577 / 2SA854S FElectrical characteristic curves 206

4.5. 2sa1036k_2sa1577_2sa854s.pdf Size:101K _rohm

2SA1034
2SA1034
Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units: mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows. 205 Transistors 2SA1036K / 2SA1577 / 2SA854S FElectrical characteristic curves 206

4.6. 2sa1037ak_2sa1576a_2sa1774_2sa2029_2sa933as.pdf Size:168K _rohm

2SA1034
2SA1034
General Purpose Transistor (?50V, ?0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS ?Features ?Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.25 1.6 2.1 ?Structure 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dimensions Each lead has same dimensions (1) Emitter ROHM : SMT3 (1) Emitter ROHM : UMT3 (2) Base EIAJ : SC-59 (2) Base EIAJ : SC-70 (3) Collector (3) Collector Abbreviated symbol : F ? Abbreviated symbol : F ? 2SA1774 2SA2029 (1) 1.2 0.2 0.8 0.2 (2) (3) (2) (3) 0.8 (1) 1.6 0.15Max. 0.1Min. (1) Base (1) Emitter ROHM : VMT3 ROHM : EMT3 (2) Base EIAJ : (2) Emitter EIAJ : SC-75A (3) Collecto (3) Collector Abbreviated symbol : F ? Abbreviated symbol : F ? 2SA933AS 4 2 0.45 2.5 0.5 0.45 5 ( ) ( ) ( ) 1 2 3 Taping specifications (1) Emitter ROHM : SPT (2) Collector E

4.7. 2sa1036k.pdf Size:162K _rohm

2SA1034
2SA1034
Medium Power Transistor 2SA1036K ?Features ?Dimensions (Unit : mm) 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage 2SA1036K operation. ± 2.9 0.2 1.1 +0.2 3) Complements the 2SC2411K. ± ± 1.9 0.2 -0.1 ± 0.8 0.1 0.95 0.95 (1) (2) 0~0.1 ?Structure Epitaxial planer type (3) PNP silicon transistor +0.1 0.15 -0.06 0.4 +0.1 -0.05 All terminals have same dimensions (1) Emitter ROHM : SMT3 (2) Base ?Absolute maximum ratings (Ta=25?C) EIAJ : SC-59 (3) Collector Parameter Symbol Limits Unit Abbreviated symbol : H ? Collector-base voltage V -40 V CBO Collector-emitter voltage V -32 V CEO ? Denotes hFE Emitter-base voltage V -5 V EBO Collector current I -0.5 A ? C Collector power dissipation P 0.2 W C Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C ?PC MAX. must not be exceeded. ?Electrical characteristics (Ta=25?C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown vo

4.8. 2sa1029_2sa1030.pdf Size:24K _hitachi

2SA1034
2SA1034
2SA1029, 2SA1030 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO –30 –55 V Collector to emitter voltage VCEO –30 –50 V Emitter to base voltage VEBO –5 –5 V Collector current IC –100 –100 mA Emitter current IE 100 100 mA Collector power dissipation PC 300 300 mW Junction temperature Tj 150 150 ° C Storage temperature Tstg –55 to +150 –55 to +150 ° C Electrical Characteristics (Ta = 25°C) 2SA1029 2SA1030 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO –30 — — –55 — — V IC = –10 ΅ A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO –30 — — –50 — — V IC = –1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO –5 — — –5 — — V IE = –10 ΅ A, IC = 0 breakdown voltage Collector cutoff curre

4.9. 2sa1031_2sa1032.pdf Size:31K _hitachi

2SA1034
2SA1034
2SA1031, 2SA1032 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC458 (LG) and 2SC2310 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1031 2SA1032 Unit Collector to base voltage VCBO –30 –55 V Collector to emitter voltage VCEO –30 –50 V Emitter to base voltage VEBO –5 –5 V Collector current IC –100 –100 mA Emitter current IE 100 100 mA Collector power dissipation PC 300 300 mW Junction temperature Tj 150 150 ° C Storage temperature Tstg –55 to +150 –55 to +150 ° C 2 2SA1031, 2SA1032 Electrical Characteristics (Ta = 25°C) 2SA1031 2SA1032 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO –30 — — –55 — — V IC = –10 ΅ A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO –30 — — –50 — — V IC = –1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO –5 — — –5 — — V IE = –10 ΅ A, IC = 0 brea

4.10. 2sa1036.pdf Size:694K _secos

2SA1034
2SA1034
2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of β€œ-C” specifies halogen and lead free FEATURES SOT-23 IC Max.= -500 mA A Low VCE(sat). Ideal for low-voltage operation. L 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 Product-Rank 2SA1036-P 2SA1036-Q 2SA1036-R 2 K E Range 82~180 120~270 180~390 D Marking HP HQ HR H J F G Millimeter Millimeter REF. REF. Min. Max. Min. Max. PACKAGE INFORMATION A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 Package MPQ LeaderSize C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. SOT-23 3K 7’ inch E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25Β°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -32 V Emitter to Base Voltage VEBO -5 V mA Collector Currrent IC -500

4.11. 2sa1037.pdf Size:368K _secos

2SA1034
2SA1034
2SA1037 -0.15A, -60V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of β€œ-C” specifies halogen and lead free FEATURES SOT-23 Excellent hFE linearity. A Complements of the 2SC2412 L 3 3 MECHANICAL DATA Top View C B Case: SOT-23, Molded Plastic 1 1 2 Weight: 0.008 grams(approx.) 2 K E D H J CLASSIFICATION OF hFE F G Product-Rank 2SA1037-Q 2SA1037-R 2SA1037-S Millimeter Millimeter REF. REF. Min. Max. Min. Max. Range 120~270 180~390 270~560 A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 Marking FQ FR FS C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 PACKAGE INFORMATION Collector Package MPQ LeaderSize 3 SOT-23 3K 7’ inch 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25Β°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Em

4.12. 2sa1036.pdf Size:363K _htsemi

2SA1034
2SA1034
2SA1 036 TRANSISTOR(PNP) SOT-23 FEATURES β€’ Large IC. ICMax.= -500 mA β€’ Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 ?A Emitter cut-off current IEBO VEB=-4V,IC=0 -1 ?A DC current gain hFE VCE=-3V,IC=-10mA 82 390 Collecto

4.13. 2sa1037.pdf Size:338K _htsemi

2SA1034
2SA1034
2SA1 037 SOT-23 TRANSISTOR(PNP) FEATURES β€’ Excellent hFE linearity. β€’ Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50?A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50?A,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 ?A DC current gain hFE VCE=-6V,IC=-1mA 120 560 Collector-emitter saturation volt

4.14. 2sa1037ak.pdf Size:214K _lge

2SA1034
2SA1034
2SA1037AK SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Excellent hFE linearity. Complments the 2SC2412K. 0.15 1.90 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 mA PC Collector Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-50?A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1uA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50?A,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 ?

4.15. 2sa1036.pdf Size:213K _lge

2SA1034
2SA1034
2SA1036 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 ?A Emitter cut-off current IEBO VEB=-4V,IC=0 -1 ?A DC current ga

4.16. 2sa1036k.pdf Size:225K _lge

2SA1034
2SA1034
2SA1036K SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 1.17 3. COLLECTOR Features 2.80 1.60 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 0.15 1.90 MARKING : HP, HQ, HR Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 ?A Emitter cut-off curre

4.17. 2sa1037.pdf Size:210K _lge

2SA1034
2SA1034
2SA1037 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity. Complments the 2SC2412 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50?A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50?A,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 ?A DC current gain hFE VCE=-6V,IC=-1mA

4.18. 2sa1037ak.pdf Size:1466K _wietron

2SA1034
2SA1034
2SA1037AK PNP 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO -50 -60 -6.0 -150 200 1.6 625 TJ ,Tstg -1.0 -50 -50 -60 -6.0 -50 u -0.1 IE= ) O Vdc, 0 E=-50 u -0.1 -60 -0.1 u -6.0 WEITRON 1/5 24-Jul-07 http://www.weitron.com.tw 2SA1037AK ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain - - hFE 560 120 (IC=-1 mAdc,VCE=-6.0 Vdc) Collector-Emitter Saturation Voltage VCE(sat) - Vdc - -0.5 (IC=-50 mAdc, IB=-5mAdc) Output Capacitance PF - 4.0 5.0 Cob VCB=-12Vdc, IE=0A, f=1MHZ Current-Gain-Bandwidth Product fT - 140 - MHz (IE=-2 mAdc,VCE=-12 Vdc,f=30 MHZ) CLASSIFICATION OF hFE Q Rank R S Range 120-270 180-390 270-560 FR G3F Marking FQ WEITRON 2/5 24-Jul-07 http://www.weitron.com.tw 2SA1037AK –50 –35.0 –10 V = –10 V T = 25Β°C C E A T = 100Β°C A –31.5 –20 25Β°C –28.0 – 40Β°C –8 –10 –24.5 –50 β€

4.19. 2sa1036k.pdf Size:210K _wietron

2SA1034
2SA1034
2SA1036K PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25Β°C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -32 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500* mA Total Device Dissipation PD 0.2 mW TA=25Β°C Tj Β°C Junction Temperature +150 Tstg Storage Temperature -55 to +150 Β°C *PD MAX. Must not be exceeded. Device Marking 2SA1036KP=HP , 2SA1036KQ=HQ , 2SA1036KR=HR WEITRON 1/4 02-Mar-06 http://www.weitron.com.tw 2SA1036K ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage V(BR)CEO -32 - - V IC = -1mA, IE = 0A Collector-Base Breakdown Voltage V(BR)CBO -40 - - V IC = -100Β΅A, IB = 0A Emitter-Base Breakdown Voltage V(BR)EBO -5.0 - - V IE= 100Β΅A, IC=0 Collector Cutoff Current ICBO - - 1.0 Β΅A VCB = -20V, IC = 0A Emitter Cutoff Current IEBO - - 1.0 Β΅A VEB = -4V, IC = 0A ON CHA

4.20. 2sa1037akxlt1.pdf Size:326K _willas

2SA1034
2SA1034
FM120-M WILLAS 2SA1037AKxLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features β€’ Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. PNP Silicon SOD-123H β€’ Low profile surface mounted application in order to optimize board space. Featrues 0.146(3.7) β€’ Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. We declare that the material of product compliance with RoHS requirements. β€’ High current capability, low forward voltage drop. β€’ High surge capability. β€’ Guardring for overvoltage protection. 0.071(1.8) β€’ Ultra high-speed switching. 0.056(1.4) β€’ Silicon epitaxial planar chip, metal silicon junction. ORDERING INFORMATION β€’ Lead-free parts meet environmental standards of MIL-STD-19500 /228 Shipping Device Package β€’ RoHS product for packing code suffix

4.21. 2sa1036kxlt1.pdf Size:329K _willas

2SA1034
2SA1034
FM120-M WILLAS 2SA1036KxLT1 THRU (*32V, *0.5A) Medium Power Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features β€’ Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H β€’ Low profile surface mounted application in order to optimize board space. 0.146(3.7) β€’ Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. β€’ High current capability, low forward voltage drop. FFeatures β€’ High surge capability. 3 1) Large IC. β€’ Guardring for overvoltage protection. ICMax. = *500mA 0.071(1.8) β€’ Ultra high-speed switching. 0.056(1.4) 2) Low VCE(sat). Ideal for low-voltage β€’ Silicon epitaxial planar chip, metal silicon junction. operation. β€’ Lead-free parts meet environmental standards of MIL-STD-19500 /228 3) We declare that the material of product β€’ RoHS product for packing code suffix

See also transistors datasheet: 2SA1027 , 2SA1028 , 2SA1029 , 2SA103 , 2SA1030 , 2SA1031 , 2SA1032 , 2SA1033 , 2N5551 , 2SA1035 , 2SA1036 , 2SA1036K , 2SA1037 , 2SA1037K , 2SA1037KLN , 2SA1038 , 2SA1039 .

Keywords

 2SA1034 Datasheet  2SA1034 Datenblatt  2SA1034 RoHS  2SA1034 Distributor
 2SA1034 Application Notes  2SA1034 Component  2SA1034 Circuit  2SA1034 Schematic
 2SA1034 Equivalent  2SA1034 Cross Reference  2SA1034 Data Sheet  2SA1034 Fiche Technique

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