All Transistors Datasheet



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2SA1034
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2SA1034
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2SA1034
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List
100DA025D .. 2N100
2N1000 .. 2N119
2N1190 .. 2N1412A
2N1413 .. 2N1655
2N1656 .. 2N1990R
2N1990S .. 2N2221A
2N2221ACSM .. 2N2484ACSM
2N2484ADCSM .. 2N2773
2N2774 .. 2N2970
2N2971 .. 2N3241A
2N3242 .. 2N3506
2N3506L .. 2N3791SM
2N3792 .. 2N4057
2N4058 .. 2N457A
2N457B .. 2N5101
2N5102 .. 2N5356
2N5357 .. 2N5704
2N5705 .. 2N6022
2N6024 .. 2N634A
2N635 .. 2N6655-2
2N6655A .. 2N819
2N82 .. 2S120
2S121 .. 2SA1079
2SA108 .. 2SA1282
2SA1282A .. 2SA1408R
2SA1409 .. 2SA1577W
2SA1578 .. 2SA183
2SA1830 .. 2SA249
2SA25 .. 2SA496Y
2SA497 .. 2SA725
2SA726 .. 2SA927
2SA928 .. 2SB1102
2SB1103 .. 2SB1261
2SB1261-Z .. 2SB1555B
2SB1555C .. 2SB311
2SB312 .. 2SB511F
2SB512 .. 2SB696K
2SB697 .. 2SB858C
2SB858D .. 2SC1044
2SC1045 .. 2SC1253
2SC1254 .. 2SC1469A
2SC146A .. 2SC169
2SC1698 .. 2SC1924
2SC1925 .. 2SC2196
2SC2197 .. 2SC24
2SC240 .. 2SC2630
2SC2631 .. 2SC2821
2SC2821E .. 2SC306
2SC3060 .. 2SC3262
2SC3263 .. 2SC3443
2SC3444 .. 2SC3617
2SC3618 .. 2SC3780C
2SC3780D .. 2SC3981
2SC3982 .. 2SC4163L
2SC4163M .. 2SC4422
2SC4423 .. 2SC4725
2SC4726 .. 2SC5031N
2SC5031O .. 2SC5323
2SC5324 .. 2SC569
2SC5690 .. 2SC647P
2SC648 .. 2SC847
2SC848 .. 2SD1020G
2SD1020O .. 2SD1218
2SD1219 .. 2SD1402O
2SD1403 .. 2SD1618E
2SD1618S .. 2SD1803
2SD1803Q .. 2SD2017
2SD2018 .. 2SD2342B
2SD2342C .. 2SD313E
2SD313F .. 2SD532
2SD533 .. 2SD732
2SD732K .. 2SD931
2SD932 .. 3DD5024P
3DD5032 .. 40412V2
40413 .. 9013F
9013G .. AC180KL
AC180L .. AD462
AD463 .. AM1011-075
AM1011-300 .. BC107CSM
BC107P .. BC206C
BC207 .. BC307C
BC307VI .. BC418VI
BC419 .. BC558A
BC558AP .. BC848CW
BC848CWT1 .. BCP628C
BCP669A .. BCW66KG
BCW66KH .. BCX78-10
BCX78-7 .. BD149
BD149-10 .. BD281
BD282 .. BD515
BD515-1 .. BD814A
BD815 .. BDT60AF
BDT60B .. BDX37
BDX40 .. BF118
BF119 .. BF345
BF355 .. BF642
BF642P .. BFN23R
BFN24 .. BFR81
BFR81TO5 .. BFV10
BFV11 .. BFX79
BFX80 .. BLW46
BLW47 .. BSP52
BSP52T1 .. BSW21
BSW21A .. BT2604
BT2604T .. BTN2222AL3
BTN2222AN3 .. BU526A-7
BU526A-8 .. BUL704
BUL705 .. BUV46
BUV46A .. BUX82-5
BUX82-6 .. C9083
C9084 .. CENU52
CENU55 .. CJD340
CJD3439 .. CMPTA13
CMPTA14 .. CS9015A
CS9015B .. CSC1008
CSC1008G .. CSD1563AP
CSD1563AQ .. D10-28B
D100 .. D39C3
D39C4 .. D44VM5
D44VM6 .. DH3724CN
DH3725CD .. DTA123EE
DTA123EEA .. DTC143TEA
DTC143TKA .. DXTP03200BP5
DXTP19020DP5 .. ECG344
ECG345 .. ES3126
ESM1000 .. FA1L3N
FA1L4L .. FJPF13009
FJPF3305 .. FMMT5088
FMMT5089 .. FT317A
FT317B .. GA53104
GA53149 .. GES4123
GES4124 .. GFT34-15
GFT34-30 .. GT2765
GT2766 .. HA7507
HA7510 .. HMBT2222A
HMBT2369 .. HUN2115
HUN2116 .. JA101P
JA101Q .. KD338
KD3442 .. KRA557F
KRA557U .. KRC416
KRC416E .. KSA1241O
KSA1241Y .. KSC2223Y
KSC2233 .. KSC945L
KSC945O .. KSP25
KSP26 .. KT3128B-1
KT3128B1 .. KT501V
KT502A .. KT808A
KT808A3 .. KT837A
KT837A1-IM .. KT997B
KT999A .. KTC3883
KTC3911 .. L8550HQLT1G
L8550HRLT1G .. MA8001
MA8002 .. MHQ2221
MHQ2222 .. MJD117L
MJD117T4 .. MJE488
MJE49 .. MM4429
MM4430 .. MMBT5127
MMBT5128 .. MMUN2214L
MMUN2215 .. MP4051
MP4052 .. MPQ5857
MPQ5858 .. MPS918R
MPS929 .. MRF449
MRF450 .. NA01EH
NA01EI .. NB011FV
NB011FY .. NB123H
NB123HH .. NB323Y
NB323Z .. NPS3707
NPS3708 .. NSS35200CF8T1G
NSS35200MR6T1G .. OC450
OC450K .. PBSS304NX
PBSS304NZ .. PEMB10
PEMB11 .. PN3906
PN3906R .. PZT5401
PZT5551 .. RN1116MFV
RN1117 .. RN2302
RN2303 .. RS7241
RS7406 .. SCE308
SCE309 .. SFT288
SFT298 .. SPS6012
SPS8050 .. ST2SB772U
ST2SB9435U .. STX83003
STX93003 .. T1973
T1992 .. TEC9013G
TEC9013H .. TIP50J3
TIP51 .. TK35
TK35C .. TP2712
TP2713 .. TTC003
TTC004 .. UN4111
UN4112 .. WT5501-05
WT5601-06 .. ZTX214C
ZTX214CK .. ZTX955
ZTX956 .. ZXTPS720MC
 
2SA1034 All Transistors Datasheet. Power MOSFET, IGBT, IC, Triacs Database. Semiconductor Catalog
 

2SA1034 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SA1034

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 35

Maximum collector-emitter voltage |Uce|, V: 35

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.05

Maksimalna temperatura (Tj), °C: 150

Transition frequency (ft), MHz: 280

Collector capacitance (Cc), pF: 3.3

Forward current transfer ratio (hFE), min: 180

Noise Figure, dB: -

Package of 2SA1034 transistor: TO236

2SA1034 Equivalent Transistors - Cross-Reference Search

2SA1034 PDF doc:

1.1. 2sa1034_2sa1035.pdf Size:55K _panasonic

2SA1034
2SA1034
Transistor 2SA1034, 2SA1035 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SC2405 and 2SC2406 Features +0.2 2.8 0.3 Low noise voltage NV. +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 packing. 3 Absolute Maximum Ratings (Ta=25?C) 2 Parameter Symbol Ratings Unit Collector to 2SA1034 35 VCBO V base voltage 2SA1035 55 0.1 to 0.3 Collector to 2SA1034 35 0.4 0.2 VCEO V emitter voltage 2SA1035 55 Emitter to base voltage VEBO 5 V Peak collector current ICP 100 mA 1:Base JEDEC:TO236 Collector current IC 50 mA 2:Emitter EIAJ:SC59 3:Collector Mini Type Package Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Marking symbol : F(2SA1034) Storage temperature Tstg 55 ~ +150 ?C H(2SA1035) Electrical Characteristics

4.1. 2sa1037ak_2sa1576a_2sa1774_2sa933as.pdf Size:100K _rohm

2SA1034
2SA1034
Transistors General Purpose Transistor (*50V, *0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS FFeatures FExternal dimensions (Units: mm) 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S. FStructure Epitaxial planar type PNP silicon transistor (96-89-A32) 198 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows: 199 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FElectrical characteristic curves 200

4.2. 2sa1579_2sa1514k_2sa1038s.pdf Size:75K _rohm

2SA1034
2SA1034
2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (-120V, -50mA) 2SA1579 / 2SA1514K / 2SA1038S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = -120V) 2SA1579 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S. 1.25 2.1 0.1Min. Each lead has same dimensions ROHM : UMT3 (1) Emitter EIAJ : SC-70 (2) Base JEDEC : SOT-323 (3) Collector 2SA1514K 1.6 2.8 0.3Min. Each lead has same dimensions ROHM : SMT3 (1) Emitter EIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector 2SA1038S 4 2 0.45 2.5 0.5 0.45 5 Taping specifications (1) (2) (3) ROHM : SPT (1) Emitter EIAJ : SC-72 (2) Collector (3) Base Rev.A 1/3 2 1 2.0 1.3 ( ) ( ) 3 ( ) 0.65 0.65 0.3 0.2 0.15 0.9 0.7 0~0.1 1.9 2.9 2 1 ( ) ( ) 3 0.95 0.95 ( ) 0.4 1.1 0.15 0.8 0 to 0.1 3Min. 15Min. 3 ( ) 2SA1579 / 2SA1514K / 2SA1038S Transistors Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Coll

4.3. 2sa1036k_2sa1577_2sa854s.pdf Size:101K _rohm

2SA1034
2SA1034
Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units: mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows. 205 Transistors 2SA1036K / 2SA1577 / 2SA854S FElectrical characteristic curves 206

4.4. 2sa1037ak.pdf Size:138K _rohm

2SA1034
2SA1034
General Purpose Transistor (-50V, -0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 ?Features ?Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658. 1.25 ?Structure 1.6 2.1 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dimensions Each lead has same dimensions (1) Emitter ROHM : SMT3 (1) Emitter ROHM : UMT3 (2) Base EIAJ : SC-59 (2) Base EIAJ : SC-70 (3) Collector (3) Collector Abbreviated symbol : F ? Abbreviated symbol : F ? 2SA1774 2SA2029 (1) 1.2 0.2 0.8 0.2 (2) (3) (2) (3) 0.8 (1) 1.6 0.15Max. 0.1Min. (1) Base (1) Emitter ROHM : VMT3 ROHM : EMT3 (2) Base EIAJ : (2) Emitter EIAJ : SC-75A (3) Collecto (3) Collector Abbreviated symbol : F ? Abbreviated symbol : F ? ? Denotes hFE www.rohm.com 2012.01 - Rev.C 1/3 c 0 2012 ROHM Co., Ltd. All rights reserved. 2 1 2.0 ( ) ( ) 1.9 2.9 3 ( ) 2 1 (

4.5. 2sa1037ak_2sa1576a_2sa1774_2sa2029_2sa933as.pdf Size:168K _rohm

2SA1034
2SA1034
General Purpose Transistor (?50V, ?0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS ?Features ?Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.25 1.6 2.1 ?Structure 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dimensions Each lead has same dimensions (1) Emitter ROHM : SMT3 (1) Emitter ROHM : UMT3 (2) Base EIAJ : SC-59 (2) Base EIAJ : SC-70 (3) Collector (3) Collector Abbreviated symbol : F ? Abbreviated symbol : F ? 2SA1774 2SA2029 (1) 1.2 0.2 0.8 0.2 (2) (3) (2) (3) 0.8 (1) 1.6 0.15Max. 0.1Min. (1) Base (1) Emitter ROHM : VMT3 ROHM : EMT3 (2) Base EIAJ : (2) Emitter EIAJ : SC-75A (3) Collecto (3) Collector Abbreviated symbol : F ? Abbreviated symbol : F ? 2SA933AS 4 2 0.45 2.5 0.5 0.45 5 ( ) ( ) ( ) 1 2 3 Taping specifications (1) Emitter ROHM : SPT (2) Collector E

4.6. 2sa854_2sa1036k_2sa1577.pdf Size:101K _rohm

2SA1034
2SA1034
Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units: mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows. 205 Transistors 2SA1036K / 2SA1577 / 2SA854S FElectrical characteristic curves 206

4.7. 2sa1036k.pdf Size:162K _rohm

2SA1034
2SA1034
Medium Power Transistor 2SA1036K ?Features ?Dimensions (Unit : mm) 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage 2SA1036K operation. 2.9 0.2 1.1 +0.2 3) Complements the 2SC2411K. 1.9 0.2 -0.1 0.8 0.1 0.95 0.95 (1) (2) 0~0.1 ?Structure Epitaxial planer type (3) PNP silicon transistor +0.1 0.15 -0.06 0.4 +0.1 -0.05 All terminals have same dimensions (1) Emitter ROHM : SMT3 (2) Base ?Absolute maximum ratings (Ta=25?C) EIAJ : SC-59 (3) Collector Parameter Symbol Limits Unit Abbreviated symbol : H ? Collector-base voltage V -40 V CBO Collector-emitter voltage V -32 V CEO ? Denotes hFE Emitter-base voltage V -5 V EBO Collector current I -0.5 A ? C Collector power dissipation P 0.2 W C Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C ?PC MAX. must not be exceeded. ?Electrical characteristics (Ta=25?C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown vo

4.8. 2sa1029_2sa1030.pdf Size:24K _hitachi

2SA1034
2SA1034
2SA1029, 2SA1030 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 5 5 V Collector current IC 100 100 mA Emitter current IE 100 100 mA Collector power dissipation PC 300 300 mW Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C Electrical Characteristics (Ta = 25C) 2SA1029 2SA1030 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 30 55 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 30 50 V IC = 1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO 5 5 V IE = 10 A, IC = 0 breakdown voltage Collector cutoff curre

4.9. 2sa1031_2sa1032.pdf Size:31K _hitachi

2SA1034
2SA1034
2SA1031, 2SA1032 Silicon PNP Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SC458 (LG) and 2SC2310 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SA1031 2SA1032 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 5 5 V Collector current IC 100 100 mA Emitter current IE 100 100 mA Collector power dissipation PC 300 300 mW Junction temperature Tj 150 150 C Storage temperature Tstg 55 to +150 55 to +150 C 2 2SA1031, 2SA1032 Electrical Characteristics (Ta = 25C) 2SA1031 2SA1032 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO 30 55 V IC = 10 A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO 30 50 V IC = 1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO 5 5 V IE = 10 A, IC = 0 brea

4.10. 2sa1037.pdf Size:368K _secos

2SA1034
2SA1034
2SA1037 -0.15A, -60V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 Excellent hFE linearity. A Complements of the 2SC2412 L 3 3 MECHANICAL DATA Top View C B Case: SOT-23, Molded Plastic 1 1 2 Weight: 0.008 grams(approx.) 2 K E D H J CLASSIFICATION OF hFE F G Product-Rank 2SA1037-Q 2SA1037-R 2SA1037-S Millimeter Millimeter REF. REF. Min. Max. Min. Max. Range 120~270 180~390 270~560 A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 Marking FQ FR FS C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 PACKAGE INFORMATION Collector Package MPQ LeaderSize 3 SOT-23 3K 7’ inch 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Em

4.11. 2sa1036.pdf Size:694K _secos

2SA1034
2SA1034
2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 IC Max.= -500 mA A Low VCE(sat). Ideal for low-voltage operation. L 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 Product-Rank 2SA1036-P 2SA1036-Q 2SA1036-R 2 K E Range 82~180 120~270 180~390 D Marking HP HQ HR H J F G Millimeter Millimeter REF. REF. Min. Max. Min. Max. PACKAGE INFORMATION A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 Package MPQ LeaderSize C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. SOT-23 3K 7’ inch E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -32 V Emitter to Base Voltage VEBO -5 V mA Collector Currrent IC -500

4.12. 2sa1037.pdf Size:338K _htsemi

2SA1034
2SA1034
2SA1 037 SOT-23 TRANSISTOR(PNP) FEATURES • Excellent hFE linearity. • Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50?A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50?A,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 ?A DC current gain hFE VCE=-6V,IC=-1mA 120 560 Collector-emitter saturation volt

4.13. 2sa1036.pdf Size:363K _htsemi

2SA1034
2SA1034
2SA1 036 TRANSISTOR(PNP) SOT-23 FEATURES • Large IC. ICMax.= -500 mA • Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 ?A Emitter cut-off current IEBO VEB=-4V,IC=0 -1 ?A DC current gain hFE VCE=-3V,IC=-10mA 82 390 Collecto

4.14. 2sa1037.pdf Size:210K _lge

2SA1034
2SA1034
2SA1037 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity. Complments the 2SC2412 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50?A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50?A,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 ?A DC current gain hFE VCE=-6V,IC=-1mA

4.15. 2sa1036.pdf Size:213K _lge

2SA1034
2SA1034
2SA1036 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 ?A Emitter cut-off current IEBO VEB=-4V,IC=0 -1 ?A DC current ga

4.16. 2sa1037ak.pdf Size:214K _lge

2SA1034
2SA1034
2SA1037AK SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Excellent hFE linearity. Complments the 2SC2412K. 0.15 1.90 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 mA PC Collector Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-50?A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1uA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50?A,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 ?

4.17. 2sa1036k.pdf Size:225K _lge

2SA1034
2SA1034
2SA1036K SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 1.17 3. COLLECTOR Features 2.80 1.60 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 0.15 1.90 MARKING : HP, HQ, HR Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 ?A Emitter cut-off curre

4.18. 2sa1037ak.pdf Size:1466K _wietron

2SA1034
2SA1034
2SA1037AK PNP 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO -50 -60 -6.0 -150 200 1.6 625 TJ ,Tstg -1.0 -50 -50 -60 -6.0 -50 u -0.1 IE= ) O Vdc, 0 E=-50 u -0.1 -60 -0.1 u -6.0 WEITRON 1/5 24-Jul-07 http://www.weitron.com.tw 2SA1037AK ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain - - hFE 560 120 (IC=-1 mAdc,VCE=-6.0 Vdc) Collector-Emitter Saturation Voltage VCE(sat) - Vdc - -0.5 (IC=-50 mAdc, IB=-5mAdc) Output Capacitance PF - 4.0 5.0 Cob VCB=-12Vdc, IE=0A, f=1MHZ Current-Gain-Bandwidth Product fT - 140 - MHz (IE=-2 mAdc,VCE=-12 Vdc,f=30 MHZ) CLASSIFICATION OF hFE Q Rank R S Range 120-270 180-390 270-560 FR G3F Marking FQ WEITRON 2/5 24-Jul-07 http://www.weitron.com.tw 2SA1037AK –50 –35.0 –10 V = –10 V T = 25°C C E A T = 100°C A –31.5 –20 25°C –28.0 – 40°C –8 –10 –24.5 –50

4.19. 2sa1036k.pdf Size:210K _wietron

2SA1034
2SA1034
2SA1036K PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -32 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500* mA Total Device Dissipation PD 0.2 mW TA=25°C Tj °C Junction Temperature +150 Tstg Storage Temperature -55 to +150 °C *PD MAX. Must not be exceeded. Device Marking 2SA1036KP=HP , 2SA1036KQ=HQ , 2SA1036KR=HR WEITRON 1/4 02-Mar-06 http://www.weitron.com.tw 2SA1036K ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage V(BR)CEO -32 - - V IC = -1mA, IE = 0A Collector-Base Breakdown Voltage V(BR)CBO -40 - - V IC = -100µA, IB = 0A Emitter-Base Breakdown Voltage V(BR)EBO -5.0 - - V IE= 100µA, IC=0 Collector Cutoff Current ICBO - - 1.0 µA VCB = -20V, IC = 0A Emitter Cutoff Current IEBO - - 1.0 µA VEB = -4V, IC = 0A ON CHA

4.20. 2sa1037akxlt1.pdf Size:326K _willas

2SA1034
2SA1034
FM120-M WILLAS 2SA1037AKxLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. PNP Silicon SOD-123H • Low profile surface mounted application in order to optimize board space. Featrues 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. We declare that the material of product compliance with RoHS requirements. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) • Silicon epitaxial planar chip, metal silicon junction. ORDERING INFORMATION • Lead-free parts meet environmental standards of MIL-STD-19500 /228 Shipping Device Package • RoHS product for packing code suffix

4.21. 2sa1036kxlt1.pdf Size:329K _willas

2SA1034
2SA1034
FM120-M WILLAS 2SA1036KxLT1 THRU (*32V, *0.5A) Medium Power Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize board space. 0.146(3.7) • Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. • High current capability, low forward voltage drop. FFeatures • High surge capability. 3 1) Large IC. • Guardring for overvoltage protection. ICMax. = *500mA 0.071(1.8) • Ultra high-speed switching. 0.056(1.4) 2) Low VCE(sat). Ideal for low-voltage • Silicon epitaxial planar chip, metal silicon junction. operation. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 3) We declare that the material of product • RoHS product for packing code suffix

4.22. l2sa1036krlt1g.pdf Size:167K _lrc

2SA1034
2SA1034
LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOT– 23 FStructure Epitaxial planar type PNP silicon transistor 3 FDEVICE MARKING 1 1) L2SA1036KQLT1G=HQ S-L2SA1036KQLT1G=HQ 2) L2SA1036KRLT1G=HR S-L2SA1036KRLT1G=HR 2 PNP FAbsolute maximum ratings (Ta = 25_C) FORDERING INFORMATION Shipping Device Package SOT-23 3000/Tape & Reel L2SA1036K*LT1G SOT-23 10000/Tape & Reel L2SA1036K*LT3G Rev.O 1/4 LESHAN RADIO COMPANY, LTD. L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FElectrical characteristics (Ta = 25_C) Parameter Symbol Min. Typ. Max. Unit Cond

4.23. l2sa1037akrlt1g.pdf Size:142K _lrc

2SA1034
2SA1034
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements. S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Package 1 L2SA1037AKQLT1G SOT23 3000/Tape & Reel S-L2SA1037AKQLT1G 2 L2SA1037AKQLT3G 10000/Tape & Reel SOT23 S-L2SA1037AKQLT3G SOT– 23 MAXIMUM RATINGS 3 COLLECTOR Rating Symbol Value Unit Collector–Emitter Voltage V CEO –50 V 1 BASE Collector–Base Voltage V CBO –60 V Emitter–Base Voltage V EBO –6.0 V 2 EMITTER Collector Current — Continuous I C –150 mAdc Collector power dissipation P C 0.2 W Junction temperature T j 150 °C Storage temperature T stg -55 ~+150 °C DEVICE MARKING L2SA1037AKQLT1G =FQ L2SA1037AKSLT1G=G3F L2SA1037AKRLT1G=FR ELECTRICAL CHARA

4.24. l2sa1037akslt1g.pdf Size:143K _lrc

2SA1034
2SA1034
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features We declare that the material of product compliance with RoHS requirements. L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1037AKQLT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Package 1 L2SA1037AKQLT1G SOT23 3000/Tape & Reel S-L2SA1037AKQLT1G 2 L2SA1037AKQLT3G 10000/Tape & Reel SOT23 S-L2SA1037AKQLT3G SOT– 23 MAXIMUM RATINGS 3 COLLECTOR Rating Symbol Value Unit Collector–Emitter Voltage V CEO –50 V 1 BASE Collector–Base Voltage V CBO –60 V Emitter–Base Voltage V EBO –6.0 V 2 EMITTER Collector Current — Continuous I C –150 mAdc Collector power dissipation P C 0.2 W Junction temperature T j 150 °C Storage temperature T stg -55 ~+150 °C DEVICE MARKING L2SA1037AKQLT1G =FQ L2SA1037AKSLT1G=G3F L2SA1037AKRLT1G=FR ELECTRICAL CHAR

4.25. l2sa1036kqlt1g.pdf Size:165K _lrc

2SA1034
2SA1034
LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. SOT– 23 FStructure Epitaxial planar type PNP silicon transistor 3 FDEVICE MARKING 1 1) L2SA1036KQLT1G=HQ S- L2SA1036KQLT1G=HQ 2) L2SA1036KRLT1G=HR S-L2SA1036KRLT1G=HR 2 PNP FAbsolute maximum ratings (Ta = 25_C) FORDERING INFORMATION Shipping Device Package SOT-23 3000/Tape & Reel L2SA1036K*LT1G SOT-23 10000/Tape & Reel L2SA1036K*LT3G Rev.O 1/4 LESHAN RADIO COMPANY, LTD. L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FElectrical characteristics (Ta = 25_C) Parameter Symbol Min. Typ. Max. Unit Con

4.26. l2sa1037akqlt1g.pdf Size:142K _lrc

2SA1034
2SA1034
LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements. S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Package 1 L2SA1037AKQLT1G SOT23 3000/Tape & Reel S-L2SA1037AKQLT1G 2 L2SA1037AKQLT3G 10000/Tape & Reel SOT23 S-L2SA1037AKQLT3G SOT– 23 MAXIMUM RATINGS 3 COLLECTOR Rating Symbol Value Unit Collector–Emitter Voltage V CEO –50 V 1 BASE Collector–Base Voltage V CBO –60 V Emitter–Base Voltage V EBO –6.0 V 2 EMITTER Collector Current — Continuous I C –150 mAdc Collector power dissipation P C 0.2 W Junction temperature T j 150 °C Storage temperature T stg -55 ~+150 °C DEVICE MARKING L2SA1037AKQLT1G =FQ L2SA1037AKSLT1G=G3F L2SA1037AKRLT1G=FR ELECTRICAL CHARA

See also transistors datasheet: 2SA1027 , 2SA1028 , 2SA1029 , 2SA103 , 2SA1030 , 2SA1031 , 2SA1032 , 2SA1033 , 2N5551 , 2SA1035 , 2SA1036 , 2SA1036K , 2SA1037 , 2SA1037K , 2SA1037KLN , 2SA1038 , 2SA1039 .

Keywords

 2SA1034 Datasheet  2SA1034 Design 2SA1034 MOSFET 2SA1034 Power
 2SA1034 RoHS Compliant 2SA1034 Service 2SA1034 Triacs 2SA1034 Semiconductor
 2SA1034 Database 2SA1034 Innovation 2SA1034 IC 2SA1034 Electricity

 

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