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2SA1034
  2SA1034
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2SA1034
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2SA1034
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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2SA1034 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SA1034 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SA1034

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 35

Maximum collector-emitter voltage |Uce|, V: 35

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.05

Maksimalna temperatura (Tj), Β°C: 150

Transition frequency (ft), MHz: 280

Collector capacitance (Cc), pF: 3.3

Forward current transfer ratio (hFE), min: 180

Noise Figure, dB: -

Package of 2SA1034 transistor: TO236

2SA1034 Equivalent Transistors - Cross-Reference Search

2SA1034 PDF doc:

1.1. 2sa1034_2sa1035.pdf Size:55K _panasonic

2SA1034
2SA1034
Transistor 2SA1034, 2SA1035 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SC2405 and 2SC2406 Features +0.2 2.8 –0.3 Low noise voltage NV. +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 packing. 3 Absolute Maximum Ratings (Ta=25?C) 2 Parameter Symbol Ratings Unit Collector to 2SA1034 –35 VCBO V base voltage 2SA1035 –55 0.1 to 0.3 Collector to 2SA1034 –35 0.4± 0.2 VCEO V emitter voltage 2SA1035 –55 Emitter to base voltage VEBO –5 V Peak collector current ICP –100 mA 1:Base JEDEC:TO–236 Collector current IC –50 mA 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Marking symbol : F(2SA1034) Storage temperature Tstg –55 ~ +150 ?C H(2SA1035) Electrical Characteristics

4.1. 2sa1036k_2sa1577_2sa854s.pdf Size:101K _rohm

2SA1034
2SA1034
Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units: mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows. 205 Transistors 2SA1036K / 2SA1577 / 2SA854S FElectrical characteristic curves 206

4.2. 2sa1579_2sa1514k_2sa1038s.pdf Size:75K _rohm

2SA1034
2SA1034
2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (-120V, -50mA) 2SA1579 / 2SA1514K / 2SA1038S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = -120V) 2SA1579 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S. 1.25 2.1 0.1Min. Each lead has same dimensions ROHM : UMT3 (1) Emitter EIAJ : SC-70 (2) Base JEDEC : SOT-323 (3) Collector 2SA1514K 1.6 2.8 0.3Min. Each lead has same dimensions ROHM : SMT3 (1) Emitter EIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector 2SA1038S 4 2 0.45 2.5 0.5 0.45 5 Taping specifications (1) (2) (3) ROHM : SPT (1) Emitter EIAJ : SC-72 (2) Collector (3) Base Rev.A 1/3 2 1 2.0 1.3 ( ) ( ) 3 ( ) 0.65 0.65 0.3 0.2 0.15 0.9 0.7 0~0.1 1.9 2.9 2 1 ( ) ( ) 3 0.95 0.95 ( ) 0.4 1.1 0.15 0.8 0 to 0.1 3Min. 15Min. 3 ( ) 2SA1579 / 2SA1514K / 2SA1038S Transistors Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Coll

4.3. 2sa1037ak_2sa1576a_2sa1774_2sa933as.pdf Size:100K _rohm

2SA1034
2SA1034
Transistors General Purpose Transistor (*50V, *0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS FFeatures FExternal dimensions (Units: mm) 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S. FStructure Epitaxial planar type PNP silicon transistor (96-89-A32) 198 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows: 199 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FElectrical characteristic curves 200

4.4. 2sa854_2sa1036k_2sa1577.pdf Size:101K _rohm

2SA1034
2SA1034
Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units: mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows. 205 Transistors 2SA1036K / 2SA1577 / 2SA854S FElectrical characteristic curves 206

4.5. 2sa1037ak_2sa1576a_2sa1774_2sa2029_2sa933as.pdf Size:168K _rohm

2SA1034
2SA1034
General Purpose Transistor (?50V, ?0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS ?Features ?Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.25 1.6 2.1 ?Structure 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dimensions Each lead has same dimensions (1) Emitter ROHM : SMT3 (1) Emitter ROHM : UMT3 (2) Base EIAJ : SC-59 (2) Base EIAJ : SC-70 (3) Collector (3) Collector Abbreviated symbol : F ? Abbreviated symbol : F ? 2SA1774 2SA2029 (1) 1.2 0.2 0.8 0.2 (2) (3) (2) (3) 0.8 (1) 1.6 0.15Max. 0.1Min. (1) Base (1) Emitter ROHM : VMT3 ROHM : EMT3 (2) Base EIAJ : (2) Emitter EIAJ : SC-75A (3) Collecto (3) Collector Abbreviated symbol : F ? Abbreviated symbol : F ? 2SA933AS 4 2 0.45 2.5 0.5 0.45 5 ( ) ( ) ( ) 1 2 3 Taping specifications (1) Emitter ROHM : SPT (2) Collector E

4.6. 2sa1037ak.pdf Size:138K _rohm

2SA1034
2SA1034
General Purpose Transistor (-50V, -0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 ?Features ?Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658. 1.25 ?Structure 1.6 2.1 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dimensions Each lead has same dimensions (1) Emitter ROHM : SMT3 (1) Emitter ROHM : UMT3 (2) Base EIAJ : SC-59 (2) Base EIAJ : SC-70 (3) Collector (3) Collector Abbreviated symbol : F ? Abbreviated symbol : F ? 2SA1774 2SA2029 (1) 1.2 0.2 0.8 0.2 (2) (3) (2) (3) 0.8 (1) 1.6 0.15Max. 0.1Min. (1) Base (1) Emitter ROHM : VMT3 ROHM : EMT3 (2) Base EIAJ : (2) Emitter EIAJ : SC-75A (3) Collecto (3) Collector Abbreviated symbol : F ? Abbreviated symbol : F ? ? Denotes hFE www.rohm.com 2012.01 - Rev.C 1/3 c 0 2012 ROHM Co., Ltd. All rights reserved. 2 1 2.0 ( ) ( ) 1.9 2.9 3 ( ) 2 1 (

4.7. 2sa1036k.pdf Size:162K _rohm

2SA1034
2SA1034
Medium Power Transistor 2SA1036K ?Features ?Dimensions (Unit : mm) 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage 2SA1036K operation. ± 2.9 0.2 1.1 +0.2 3) Complements the 2SC2411K. ± ± 1.9 0.2 -0.1 ± 0.8 0.1 0.95 0.95 (1) (2) 0~0.1 ?Structure Epitaxial planer type (3) PNP silicon transistor +0.1 0.15 -0.06 0.4 +0.1 -0.05 All terminals have same dimensions (1) Emitter ROHM : SMT3 (2) Base ?Absolute maximum ratings (Ta=25?C) EIAJ : SC-59 (3) Collector Parameter Symbol Limits Unit Abbreviated symbol : H ? Collector-base voltage V -40 V CBO Collector-emitter voltage V -32 V CEO ? Denotes hFE Emitter-base voltage V -5 V EBO Collector current I -0.5 A ? C Collector power dissipation P 0.2 W C Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C ?PC MAX. must not be exceeded. ?Electrical characteristics (Ta=25?C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown vo

4.8. 2sa1029_2sa1030.pdf Size:24K _hitachi

2SA1034
2SA1034
2SA1029, 2SA1030 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO –30 –55 V Collector to emitter voltage VCEO –30 –50 V Emitter to base voltage VEBO –5 –5 V Collector current IC –100 –100 mA Emitter current IE 100 100 mA Collector power dissipation PC 300 300 mW Junction temperature Tj 150 150 ° C Storage temperature Tstg –55 to +150 –55 to +150 ° C Electrical Characteristics (Ta = 25°C) 2SA1029 2SA1030 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO –30 — — –55 — — V IC = –10 ΅ A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO –30 — — –50 — — V IC = –1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO –5 — — –5 — — V IE = –10 ΅ A, IC = 0 breakdown voltage Collector cutoff curre

4.9. 2sa1031_2sa1032.pdf Size:31K _hitachi

2SA1034
2SA1034
2SA1031, 2SA1032 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC458 (LG) and 2SC2310 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1031 2SA1032 Unit Collector to base voltage VCBO –30 –55 V Collector to emitter voltage VCEO –30 –50 V Emitter to base voltage VEBO –5 –5 V Collector current IC –100 –100 mA Emitter current IE 100 100 mA Collector power dissipation PC 300 300 mW Junction temperature Tj 150 150 ° C Storage temperature Tstg –55 to +150 –55 to +150 ° C 2 2SA1031, 2SA1032 Electrical Characteristics (Ta = 25°C) 2SA1031 2SA1032 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO –30 — — –55 — — V IC = –10 ΅ A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO –30 — — –50 — — V IC = –1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO –5 — — –5 — — V IE = –10 ΅ A, IC = 0 brea

4.10. 2sa1037.pdf Size:368K _secos

2SA1034
2SA1034
2SA1037 -0.15A, -60V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of β€œ-C” specifies halogen and lead free FEATURES SOT-23 Excellent hFE linearity. A Complements of the 2SC2412 L 3 3 MECHANICAL DATA Top View C B Case: SOT-23, Molded Plastic 1 1 2 Weight: 0.008 grams(approx.) 2 K E D H J CLASSIFICATION OF hFE F G Product-Rank 2SA1037-Q 2SA1037-R 2SA1037-S Millimeter Millimeter REF. REF. Min. Max. Min. Max. Range 120~270 180~390 270~560 A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 Marking FQ FR FS C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 PACKAGE INFORMATION Collector Package MPQ LeaderSize 3 SOT-23 3K 7’ inch 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25Β°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Em

4.11. 2sa1036.pdf Size:694K _secos

2SA1034
2SA1034
2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of β€œ-C” specifies halogen and lead free FEATURES SOT-23 IC Max.= -500 mA A Low VCE(sat). Ideal for low-voltage operation. L 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 Product-Rank 2SA1036-P 2SA1036-Q 2SA1036-R 2 K E Range 82~180 120~270 180~390 D Marking HP HQ HR H J F G Millimeter Millimeter REF. REF. Min. Max. Min. Max. PACKAGE INFORMATION A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 Package MPQ LeaderSize C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. SOT-23 3K 7’ inch E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25Β°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -32 V Emitter to Base Voltage VEBO -5 V mA Collector Currrent IC -500

4.12. 2sa1037.pdf Size:338K _htsemi

2SA1034
2SA1034
2SA1 037 SOT-23 TRANSISTOR(PNP) FEATURES β€’ Excellent hFE linearity. β€’ Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50?A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50?A,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 ?A DC current gain hFE VCE=-6V,IC=-1mA 120 560 Collector-emitter saturation volt

4.13. 2sa1036.pdf Size:363K _htsemi

2SA1034
2SA1034
2SA1 036 TRANSISTOR(PNP) SOT-23 FEATURES β€’ Large IC. ICMax.= -500 mA β€’ Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 ?A Emitter cut-off current IEBO VEB=-4V,IC=0 -1 ?A DC current gain hFE VCE=-3V,IC=-10mA 82 390 Collecto

4.14. 2sa1037.pdf Size:210K _lge

2SA1034
2SA1034
2SA1037 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity. Complments the 2SC2412 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50?A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50?A,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 ?A DC current gain hFE VCE=-6V,IC=-1mA

4.15. 2sa1037ak.pdf Size:214K _lge

2SA1034
2SA1034
2SA1037AK SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Excellent hFE linearity. Complments the 2SC2412K. 0.15 1.90 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 mA PC Collector Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-50?A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1uA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50?A,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 ?

4.16. 2sa1036k.pdf Size:225K _lge

2SA1034
2SA1034
2SA1036K SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 1.17 3. COLLECTOR Features 2.80 1.60 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 0.15 1.90 MARKING : HP, HQ, HR Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 ?A Emitter cut-off curre

4.17. 2sa1036.pdf Size:213K _lge

2SA1034
2SA1034
2SA1036 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 ?A Emitter cut-off current IEBO VEB=-4V,IC=0 -1 ?A DC current ga

4.18. 2sa1037ak.pdf Size:1466K _wietron

2SA1034
2SA1034
2SA1037AK PNP 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO -50 -60 -6.0 -150 200 1.6 625 TJ ,Tstg -1.0 -50 -50 -60 -6.0 -50 u -0.1 IE= ) O Vdc, 0 E=-50 u -0.1 -60 -0.1 u -6.0 WEITRON 1/5 24-Jul-07 http://www.weitron.com.tw 2SA1037AK ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain - - hFE 560 120 (IC=-1 mAdc,VCE=-6.0 Vdc) Collector-Emitter Saturation Voltage VCE(sat) - Vdc - -0.5 (IC=-50 mAdc, IB=-5mAdc) Output Capacitance PF - 4.0 5.0 Cob VCB=-12Vdc, IE=0A, f=1MHZ Current-Gain-Bandwidth Product fT - 140 - MHz (IE=-2 mAdc,VCE=-12 Vdc,f=30 MHZ) CLASSIFICATION OF hFE Q Rank R S Range 120-270 180-390 270-560 FR G3F Marking FQ WEITRON 2/5 24-Jul-07 http://www.weitron.com.tw 2SA1037AK –50 –35.0 –10 V = –10 V T = 25Β°C C E A T = 100Β°C A –31.5 –20 25Β°C –28.0 – 40Β°C –8 –10 –24.5 –50 β€

4.19. 2sa1036k.pdf Size:210K _wietron

2SA1034
2SA1034
2SA1036K PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25Β°C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -32 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500* mA Total Device Dissipation PD 0.2 mW TA=25Β°C Tj Β°C Junction Temperature +150 Tstg Storage Temperature -55 to +150 Β°C *PD MAX. Must not be exceeded. Device Marking 2SA1036KP=HP , 2SA1036KQ=HQ , 2SA1036KR=HR WEITRON 1/4 02-Mar-06 http://www.weitron.com.tw 2SA1036K ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage V(BR)CEO -32 - - V IC = -1mA, IE = 0A Collector-Base Breakdown Voltage V(BR)CBO -40 - - V IC = -100Β΅A, IB = 0A Emitter-Base Breakdown Voltage V(BR)EBO -5.0 - - V IE= 100Β΅A, IC=0 Collector Cutoff Current ICBO - - 1.0 Β΅A VCB = -20V, IC = 0A Emitter Cutoff Current IEBO - - 1.0 Β΅A VEB = -4V, IC = 0A ON CHA

4.20. 2sa1036kxlt1.pdf Size:329K _willas

2SA1034
2SA1034
FM120-M WILLAS 2SA1036KxLT1 THRU (*32V, *0.5A) Medium Power Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features β€’ Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H β€’ Low profile surface mounted application in order to optimize board space. 0.146(3.7) β€’ Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. β€’ High current capability, low forward voltage drop. FFeatures β€’ High surge capability. 3 1) Large IC. β€’ Guardring for overvoltage protection. ICMax. = *500mA 0.071(1.8) β€’ Ultra high-speed switching. 0.056(1.4) 2) Low VCE(sat). Ideal for low-voltage β€’ Silicon epitaxial planar chip, metal silicon junction. operation. β€’ Lead-free parts meet environmental standards of MIL-STD-19500 /228 3) We declare that the material of product β€’ RoHS product for packing code suffix

4.21. 2sa1037akxlt1.pdf Size:326K _willas

2SA1034
2SA1034
FM120-M WILLAS 2SA1037AKxLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features β€’ Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. PNP Silicon SOD-123H β€’ Low profile surface mounted application in order to optimize board space. Featrues 0.146(3.7) β€’ Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. We declare that the material of product compliance with RoHS requirements. β€’ High current capability, low forward voltage drop. β€’ High surge capability. β€’ Guardring for overvoltage protection. 0.071(1.8) β€’ Ultra high-speed switching. 0.056(1.4) β€’ Silicon epitaxial planar chip, metal silicon junction. ORDERING INFORMATION β€’ Lead-free parts meet environmental standards of MIL-STD-19500 /228 Shipping Device Package β€’ RoHS product for packing code suffix

See also transistors datasheet: 2SA1027 , 2SA1028 , 2SA1029 , 2SA103 , 2SA1030 , 2SA1031 , 2SA1032 , 2SA1033 , 2N5551 , 2SA1035 , 2SA1036 , 2SA1036K , 2SA1037 , 2SA1037K , 2SA1037KLN , 2SA1038 , 2SA1039 .

Keywords

 2SA1034 Datasheet  2SA1034 Datenblatt  2SA1034 RoHS  2SA1034 Distributor
 2SA1034 Application Notes  2SA1034 Component  2SA1034 Circuit  2SA1034 Schematic
 2SA1034 Equivalent  2SA1034 Cross Reference  2SA1034 Data Sheet  2SA1034 Fiche Technique

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