All Transistors. 2SA1034 Datasheet

 

2SA1034 Transistor. Datasheet pdf. Equivalent

Type Designator: 2SA1034

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 280 MHz

Collector Capacitance (Cc): 3.3 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: TO236

2SA1034 Transistor Equivalent Substitute - Cross-Reference Search

2SA1034 Datasheet PDF:

1.1. 2sa1034_2sa1035.pdf Size:55K _panasonic

2SA1034
2SA1034

Transistor 2SA1034, 2SA1035 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SC2405 and 2SC2406 Features +0.2 2.8 0.3 Low noise voltage NV. +0.25 0.65 0.15 1.5 0.05 0.65 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing a

1.2. 2sa1034.pdf Size:1127K _kexin

2SA1034
2SA1034

SMD Type Transistors PNP Transistors 2SA1034 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=-50mA ● Collector Emitter Voltage VCEO=-35V 1 2 ● Complementary to 2SC2405 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collect

4.1. 2sa1037ak_2sa1576a_2sa1774_2sa933as.pdf Size:100K _rohm

2SA1034
2SA1034

Transistors General Purpose Transistor (*50V, *0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS FFeatures FExternal dimensions (Units: mm) 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S. FStructure Epitaxial planar type PNP silicon transistor (96-89-A32) 198 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FAbsolute maximum ratings (Ta = 25_C)

4.2. 2sa1579_2sa1514k_2sa1038s.pdf Size:75K _rohm

2SA1034
2SA1034

2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (-120V, -50mA) 2SA1579 / 2SA1514K / 2SA1038S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = -120V) 2SA1579 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S. 1.25 2.1 0.1Min. Each lead has same dimensions ROHM : UMT3 (1) Emitter EIAJ : SC-70 (2) Base JEDEC : SOT-323

4.3. 2sa1036k_2sa1577_2sa854s.pdf Size:101K _rohm

2SA1034
2SA1034

Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units: mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maximum

4.4. 2sa1037ak.pdf Size:138K _rohm

2SA1034
2SA1034

General Purpose Transistor (-50V, -0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 ?Features ?Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658. 1.25 ?Structure 1.6 2.1 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dimensions Each lead has same dimensio

4.5. 2sa1037ak_2sa1576a_2sa1774_2sa2029_2sa933as.pdf Size:168K _rohm

2SA1034
2SA1034

General Purpose Transistor (?50V, ?0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS ?Features ?Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.25 1.6 2.1 ?Structure 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dimensions Each

4.6. 2sa854_2sa1036k_2sa1577.pdf Size:101K _rohm

2SA1034
2SA1034

Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units: mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maximum

4.7. 2sa1036k.pdf Size:162K _rohm

2SA1034
2SA1034

Medium Power Transistor 2SA1036K ?Features ?Dimensions (Unit : mm) 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage 2SA1036K operation. 2.9 0.2 1.1 +0.2 3) Complements the 2SC2411K. 1.9 0.2 -0.1 0.8 0.1 0.95 0.95 (1) (2) 0~0.1 ?Structure Epitaxial planer type (3) PNP silicon transistor +0.1 0.15 -0.06 0.4 +0.1 -0.05 All terminals

4.8. 2sa1029_2sa1030.pdf Size:24K _hitachi

2SA1034
2SA1034

2SA1029, 2SA1030 Silicon PNP Epitaxial Application Low frequency amplifier Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base voltage VEBO 5

4.9. 2sa1031_2sa1032.pdf Size:31K _hitachi

2SA1034
2SA1034

2SA1031, 2SA1032 Silicon PNP Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SC458 (LG) and 2SC2310 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25C) Item Symbol 2SA1031 2SA1032 Unit Collector to base voltage VCBO 30 55 V Collector to emitter voltage VCEO 30 50 V Emitter to base

4.10. 2sa1037.pdf Size:368K _secos

2SA1034
2SA1034

2SA1037 -0.15A, -60V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 Excellent hFE linearity. A Complements of the 2SC2412 L 3 3 MECHANICAL DATA Top View C B Case: SOT-23, Molded Plastic 1 1 2 Weight: 0.008 grams(approx.) 2 K E D H J CLASSIFICATION OF

4.11. 2sa1036.pdf Size:694K _secos

2SA1034
2SA1034

2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES SOT-23 IC Max.= -500 mA A Low VCE(sat). Ideal for low-voltage operation. L 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 Product-Rank 2SA1036-P 2SA1036-Q 2SA1036-R 2 K E Range 82~180 120~270 180~

4.12. 2sa1037.pdf Size:338K _htsemi

2SA1034
2SA1034

2SA1 037 SOT-23 TRANSISTOR(PNP) FEATURES • Excellent hFE linearity. • Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 mA P

4.13. 2sa1036.pdf Size:363K _htsemi

2SA1034
2SA1034

2SA1 036 TRANSISTOR(PNP) SOT-23 FEATURES • Large IC. ICMax.= -500 mA • Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Curr

4.14. 2sa1037.pdf Size:210K _lge

2SA1034
2SA1034

2SA1037 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity. Complments the 2SC2412 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V

4.15. 2sa1036.pdf Size:213K _lge

2SA1034
2SA1034

2SA1036 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitt

4.16. 2sa1037ak.pdf Size:214K _lge

2SA1034
2SA1034

2SA1037AK SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Excellent hFE linearity. Complments the 2SC2412K. 0.15 1.90 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Volt

4.17. 2sa1036k.pdf Size:225K _lge

2SA1034
2SA1034

2SA1036K SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 1.17 3. COLLECTOR Features 2.80 1.60 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 0.15 1.90 MARKING : HP, HQ, HR Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Co

4.18. 2sa1037ak.pdf Size:1466K _wietron

2SA1034
2SA1034

2SA1037AK PNP 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO -50 -60 -6.0 -150 200 1.6 625 TJ ,Tstg -1.0 -50 -50 -60 -6.0 -50 u -0.1 IE= ) O Vdc, 0 E=-50 u -0.1 -60 -0.1 u -6.0 WEITRON 1/5 24-Jul-07 http://www.weitron.com.tw 2SA1037AK ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTI

4.19. 2sa1036k.pdf Size:210K _wietron

2SA1034
2SA1034

2SA1036K PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -32 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500* mA Total Device Dissipation PD 0.2 mW TA=25°C Tj °C Junction Temperature +150 Tstg Storage Temperature -55

4.20. 2sa1037akxlt1.pdf Size:326K _willas

2SA1034
2SA1034

FM120-M WILLAS 2SA1037AKxLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. PNP Silicon SOD-123H • Low profile surface mounted application in order to

4.21. 2sa1036kxlt1.pdf Size:329K _willas

2SA1034
2SA1034

FM120-M WILLAS 2SA1036KxLT1 THRU (*32V, *0.5A) Medium Power Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to op

4.22. l2sa1036krlt1g.pdf Size:167K _lrc

2SA1034
2SA1034

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

4.23. l2sa1037akrlt1g.pdf Size:142K _lrc

2SA1034
2SA1034

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements. S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Pack

4.24. l2sa1037akslt1g.pdf Size:143K _lrc

2SA1034
2SA1034

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features We declare that the material of product compliance with RoHS requirements. L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site S-L2SA1037AKQLT1G Series and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Pac

4.25. l2sa1036kqlt1g.pdf Size:165K _lrc

2SA1034
2SA1034

LESHAN RADIO COMPANY, LTD. Medium Power Transistor (*32V, *0.5A) L2SA1036KQLT1G Series L2SA1036KQLT1G Series S-L2SA1036KQLT1G Series FFeatures 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage 3 operation. 3) We declare that the material of product compliance with RoHS requirements. 1 4)S- Prefix for Automotive and Other Applications Requiring Unique Site 2 a

4.26. l2sa1037akqlt1g.pdf Size:142K _lrc

2SA1034
2SA1034

LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features L2SA1037AKQLT1G Series We declare that the material of product compliance with RoHS requirements. S-L2SA1037AKQLT1G Series S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. 3 ORDERING INFORMATION Shipping Device Pack

4.27. 2sa1037.pdf Size:1216K _kexin

2SA1034
2SA1034

SMD Type Transistors PNP Transistors 2SA1037 (2SA1037AK) SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=150mA ● Collector Emitter Voltage VCEO=-50V 1 2 ● Complments the 2SC2412 +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit

4.28. 2sa1036.pdf Size:1179K _kexin

2SA1034
2SA1034

SMD Type Transistors PNP Transistors 2SA1036 (2SA1036K) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Large IC. ICMax. = -500mA Low VCE(sat). Ideal for low-voltage operation. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -40 V Collector-emitter

4.29. 2sa1035.pdf Size:1026K _kexin

2SA1034
2SA1034

SMD Type or SMD Type TransistICs PNP Transistors 2SA1035 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features ● Low noise voltage NV. ● High foward current transfer ratio hFE. 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 ● Complementary to 2SC2406. +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base volta

Datasheet: 2SA1027 , 2SA1028 , 2SA1029 , 2SA103 , 2SA1030 , 2SA1031 , 2SA1032 , 2SA1033 , 2N5551 , 2SA1035 , 2SA1036 , 2SA1036K , 2SA1037 , 2SA1037K , 2SA1037KLN , 2SA1038 , 2SA1039 .

 


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