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2SA1034
  2SA1034
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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
2SA1034 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SA1034 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SA1034

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.2

Maximum collector-base voltage |Ucb|, V: 35

Maximum collector-emitter voltage |Uce|, V: 35

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.05

Maksimalna temperatura (Tj), Β°C: 150

Transition frequency (ft), MHz: 280

Collector capacitance (Cc), pF: 3.3

Forward current transfer ratio (hFE), min: 180

Noise Figure, dB: -

Package of 2SA1034 transistor: TO236

2SA1034 Equivalent Transistors - Cross-Reference Search

2SA1034 PDF doc:

1.1. 2sa1034_2sa1035.pdf Size:55K _panasonic

2SA1034
2SA1034
Transistor 2SA1034, 2SA1035 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SC2405 and 2SC2406 Features +0.2 2.8 –0.3 Low noise voltage NV. +0.25 0.65± 0.15 1.5 –0.05 0.65± 0.15 High foward current transfer ratio hFE. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 packing. 3 Absolute Maximum Ratings (Ta=25?C) 2 Parameter Symbol Ratings Unit Collector to 2SA1034 –35 VCBO V base voltage 2SA1035 –55 0.1 to 0.3 Collector to 2SA1034 –35 0.4± 0.2 VCEO V emitter voltage 2SA1035 –55 Emitter to base voltage VEBO –5 V Peak collector current ICP –100 mA 1:Base JEDEC:TO–236 Collector current IC –50 mA 2:Emitter EIAJ:SC–59 3:Collector Mini Type Package Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Marking symbol : F(2SA1034) Storage temperature Tstg –55 ~ +150 ?C H(2SA1035) Electrical Characteristics

4.1. 2sa1036k_2sa1577_2sa854s.pdf Size:101K _rohm

2SA1034
2SA1034
Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units: mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows. 205 Transistors 2SA1036K / 2SA1577 / 2SA854S FElectrical characteristic curves 206

4.2. 2sa1579_2sa1514k_2sa1038s.pdf Size:75K _rohm

2SA1034
2SA1034
2SA1579 / 2SA1514K / 2SA1038S Transistors High-voltage Amplifier Transistor (-120V, -50mA) 2SA1579 / 2SA1514K / 2SA1038S External dimensions (Unit : mm) Features 1) High breakdown voltage. (BVCEO = -120V) 2SA1579 2) Complements the 2SC4102 / 2SC3906K / 2SC2389S. 1.25 2.1 0.1Min. Each lead has same dimensions ROHM : UMT3 (1) Emitter EIAJ : SC-70 (2) Base JEDEC : SOT-323 (3) Collector 2SA1514K 1.6 2.8 0.3Min. Each lead has same dimensions ROHM : SMT3 (1) Emitter EIAJ : SC-59 (2) Base JEDEC : SOT-346 (3) Collector 2SA1038S 4 2 0.45 2.5 0.5 0.45 5 Taping specifications (1) (2) (3) ROHM : SPT (1) Emitter EIAJ : SC-72 (2) Collector (3) Base Rev.A 1/3 2 1 2.0 1.3 ( ) ( ) 3 ( ) 0.65 0.65 0.3 0.2 0.15 0.9 0.7 0~0.1 1.9 2.9 2 1 ( ) ( ) 3 0.95 0.95 ( ) 0.4 1.1 0.15 0.8 0 to 0.1 3Min. 15Min. 3 ( ) 2SA1579 / 2SA1514K / 2SA1038S Transistors Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Coll

4.3. 2sa1037ak_2sa1576a_2sa1774_2sa933as.pdf Size:100K _rohm

2SA1034
2SA1034
Transistors General Purpose Transistor (*50V, *0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS FFeatures FExternal dimensions (Units: mm) 1) Excellent hFE linearity. 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC1740S. FStructure Epitaxial planar type PNP silicon transistor (96-89-A32) 198 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows: 199 Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS FElectrical characteristic curves 200

4.4. 2sa854_2sa1036k_2sa1577.pdf Size:101K _rohm

2SA1034
2SA1034
Transistors Medium Power Transistor (*32V, *0.5A) 2SA1036K / 2SA1577 / 2SA854S FFeatures FExternal dimensions (Units: mm) 1) Large IC. ICMax. = *500mA 2) Low VCE(sat). Ideal for low-voltage operation. 3) Complements the 2SC2411K / 2SC1741S / 2SC4097. FStructure Epitaxial planar type PNP silicon transistor (96-86-B11) 204 Transistors 2SA1036K / 2SA1577 / 2SA854S FAbsolute maximum ratings (Ta = 25_C) FElectrical characteristics (Ta = 25_C) FPackaging specifications and hFE hFE values are classified as follows. 205 Transistors 2SA1036K / 2SA1577 / 2SA854S FElectrical characteristic curves 206

4.5. 2sa1037ak_2sa1576a_2sa1774_2sa2029_2sa933as.pdf Size:168K _rohm

2SA1034
2SA1034
General Purpose Transistor (?50V, ?0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS ?Features ?Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S. 1.25 1.6 2.1 ?Structure 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dimensions Each lead has same dimensions (1) Emitter ROHM : SMT3 (1) Emitter ROHM : UMT3 (2) Base EIAJ : SC-59 (2) Base EIAJ : SC-70 (3) Collector (3) Collector Abbreviated symbol : F ? Abbreviated symbol : F ? 2SA1774 2SA2029 (1) 1.2 0.2 0.8 0.2 (2) (3) (2) (3) 0.8 (1) 1.6 0.15Max. 0.1Min. (1) Base (1) Emitter ROHM : VMT3 ROHM : EMT3 (2) Base EIAJ : (2) Emitter EIAJ : SC-75A (3) Collecto (3) Collector Abbreviated symbol : F ? Abbreviated symbol : F ? 2SA933AS 4 2 0.45 2.5 0.5 0.45 5 ( ) ( ) ( ) 1 2 3 Taping specifications (1) Emitter ROHM : SPT (2) Collector E

4.6. 2sa1037ak.pdf Size:138K _rohm

2SA1034
2SA1034
General Purpose Transistor (-50V, -0.15A) 2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 ?Features ?Dimensions (Unit : mm) 1) Excellent hFE linearity. 2SA1037AK 2SA1576A 2) Complements the 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658. 1.25 ?Structure 1.6 2.1 2.8 Epitaxial planar type. PNP silicon transistor 0.1 to 0.4 0.3 to 0.6 Each lead has same dimensions Each lead has same dimensions (1) Emitter ROHM : SMT3 (1) Emitter ROHM : UMT3 (2) Base EIAJ : SC-59 (2) Base EIAJ : SC-70 (3) Collector (3) Collector Abbreviated symbol : F ? Abbreviated symbol : F ? 2SA1774 2SA2029 (1) 1.2 0.2 0.8 0.2 (2) (3) (2) (3) 0.8 (1) 1.6 0.15Max. 0.1Min. (1) Base (1) Emitter ROHM : VMT3 ROHM : EMT3 (2) Base EIAJ : (2) Emitter EIAJ : SC-75A (3) Collecto (3) Collector Abbreviated symbol : F ? Abbreviated symbol : F ? ? Denotes hFE www.rohm.com 2012.01 - Rev.C 1/3 c 0 2012 ROHM Co., Ltd. All rights reserved. 2 1 2.0 ( ) ( ) 1.9 2.9 3 ( ) 2 1 (

4.7. 2sa1036k.pdf Size:162K _rohm

2SA1034
2SA1034
Medium Power Transistor 2SA1036K ?Features ?Dimensions (Unit : mm) 1) Large IC. ICMAX. = -500mA 2) Low VCE(sat). Ideal for low-voltage 2SA1036K operation. ± 2.9 0.2 1.1 +0.2 3) Complements the 2SC2411K. ± ± 1.9 0.2 -0.1 ± 0.8 0.1 0.95 0.95 (1) (2) 0~0.1 ?Structure Epitaxial planer type (3) PNP silicon transistor +0.1 0.15 -0.06 0.4 +0.1 -0.05 All terminals have same dimensions (1) Emitter ROHM : SMT3 (2) Base ?Absolute maximum ratings (Ta=25?C) EIAJ : SC-59 (3) Collector Parameter Symbol Limits Unit Abbreviated symbol : H ? Collector-base voltage V -40 V CBO Collector-emitter voltage V -32 V CEO ? Denotes hFE Emitter-base voltage V -5 V EBO Collector current I -0.5 A ? C Collector power dissipation P 0.2 W C Junction temperature Tj 150 °C Storage temperature Tstg -55 to +150 °C ?PC MAX. must not be exceeded. ?Electrical characteristics (Ta=25?C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown vo

4.8. 2sa1029_2sa1030.pdf Size:24K _hitachi

2SA1034
2SA1034
2SA1029, 2SA1030 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1029, 2SA1030 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1029 2SA1030 Unit Collector to base voltage VCBO –30 –55 V Collector to emitter voltage VCEO –30 –50 V Emitter to base voltage VEBO –5 –5 V Collector current IC –100 –100 mA Emitter current IE 100 100 mA Collector power dissipation PC 300 300 mW Junction temperature Tj 150 150 ° C Storage temperature Tstg –55 to +150 –55 to +150 ° C Electrical Characteristics (Ta = 25°C) 2SA1029 2SA1030 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO –30 — — –55 — — V IC = –10 ΅ A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO –30 — — –50 — — V IC = –1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO –5 — — –5 — — V IE = –10 ΅ A, IC = 0 breakdown voltage Collector cutoff curre

4.9. 2sa1031_2sa1032.pdf Size:31K _hitachi

2SA1034
2SA1034
2SA1031, 2SA1032 Silicon PNP Epitaxial Application • Low frequency low noise amplifier • Complementary pair with 2SC458 (LG) and 2SC2310 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1031, 2SA1032 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SA1031 2SA1032 Unit Collector to base voltage VCBO –30 –55 V Collector to emitter voltage VCEO –30 –50 V Emitter to base voltage VEBO –5 –5 V Collector current IC –100 –100 mA Emitter current IE 100 100 mA Collector power dissipation PC 300 300 mW Junction temperature Tj 150 150 ° C Storage temperature Tstg –55 to +150 –55 to +150 ° C 2 2SA1031, 2SA1032 Electrical Characteristics (Ta = 25°C) 2SA1031 2SA1032 Item Symbol Min Typ Max Min Typ Max Unit Test conditions Collector to base V(BR)CBO –30 — — –55 — — V IC = –10 ΅ A, IE = 0 breakdown voltage Collector to emitter V(BR)CEO –30 — — –50 — — V IC = –1 mA, RBE = ? breakdown voltage Emitter to base V(BR)EBO –5 — — –5 — — V IE = –10 ΅ A, IC = 0 brea

4.10. 2sa1037.pdf Size:368K _secos

2SA1034
2SA1034
2SA1037 -0.15A, -60V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of β€œ-C” specifies halogen and lead free FEATURES SOT-23 Excellent hFE linearity. A Complements of the 2SC2412 L 3 3 MECHANICAL DATA Top View C B Case: SOT-23, Molded Plastic 1 1 2 Weight: 0.008 grams(approx.) 2 K E D H J CLASSIFICATION OF hFE F G Product-Rank 2SA1037-Q 2SA1037-R 2SA1037-S Millimeter Millimeter REF. REF. Min. Max. Min. Max. Range 120~270 180~390 270~560 A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 Marking FQ FR FS C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 PACKAGE INFORMATION Collector Package MPQ LeaderSize 3 SOT-23 3K 7’ inch 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25Β°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Em

4.11. 2sa1036.pdf Size:694K _secos

2SA1034
2SA1034
2SA1036 -0.5A, -40V PNP Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of β€œ-C” specifies halogen and lead free FEATURES SOT-23 IC Max.= -500 mA A Low VCE(sat). Ideal for low-voltage operation. L 3 3 Top View C B CLASSIFICATION OF hFE 1 1 2 Product-Rank 2SA1036-P 2SA1036-Q 2SA1036-R 2 K E Range 82~180 120~270 180~390 D Marking HP HQ HR H J F G Millimeter Millimeter REF. REF. Min. Max. Min. Max. PACKAGE INFORMATION A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 Package MPQ LeaderSize C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. SOT-23 3K 7’ inch E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 Collector 3 1 Base 2 Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25Β°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO -40 V Collector to Emitter Voltage VCEO -32 V Emitter to Base Voltage VEBO -5 V mA Collector Currrent IC -500

4.12. 2sa1037.pdf Size:338K _htsemi

2SA1034
2SA1034
2SA1 037 SOT-23 TRANSISTOR(PNP) FEATURES β€’ Excellent hFE linearity. β€’ Complments the 2SC2412 1. BASE 2. EMITTER 3. COLLECTOR MARKING : FQ, FR, FS MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50?A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50?A,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 ?A DC current gain hFE VCE=-6V,IC=-1mA 120 560 Collector-emitter saturation volt

4.13. 2sa1036.pdf Size:363K _htsemi

2SA1034
2SA1034
2SA1 036 TRANSISTOR(PNP) SOT-23 FEATURES β€’ Large IC. ICMax.= -500 mA β€’ Low VCE(sat). Ideal for low-voltage operation. 1. BASE 2. EMITTER 3. COLLECTOR MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 ?A Emitter cut-off current IEBO VEB=-4V,IC=0 -1 ?A DC current gain hFE VCE=-3V,IC=-10mA 82 390 Collecto

4.14. 2sa1037.pdf Size:210K _lge

2SA1034
2SA1034
2SA1037 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity. Complments the 2SC2412 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50?A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50?A,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 ?A DC current gain hFE VCE=-6V,IC=-1mA

4.15. 2sa1037ak.pdf Size:214K _lge

2SA1034
2SA1034
2SA1037AK SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 3. COLLECTOR 1.17 Features 2.80 1.60 Excellent hFE linearity. Complments the 2SC2412K. 0.15 1.90 MARKING : FQ, FR, FS Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous 150 mA PC Collector Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic=-50?A,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO Ic=-1uA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50?A,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 ?A Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 ?

4.16. 2sa1036k.pdf Size:225K _lge

2SA1034
2SA1034
2SA1036K SOT-23-3L Transistor(PNP) SOT-23-3L 1. BASE 2.92 2. EMITTER 0.35 1.17 3. COLLECTOR Features 2.80 1.60 Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation. 0.15 1.90 MARKING : HP, HQ, HR Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 ?A Emitter cut-off curre

4.17. 2sa1036.pdf Size:213K _lge

2SA1034
2SA1034
2SA1036 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Large IC. ICMax.= -500 mA Low VCE(sat). Ideal for low-voltage operation. MARKING : HP, HQ, HR MAXIMUM RATINGS (TA=25? unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -500 mA PC Collector Power Dissipation 200 mW TJ Junction Temperature 150 ? Tstg Storage Temperature -55-150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-100?A,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V Emitter-base breakdown voltage V(BR)EBO IE=-100?A,IC=0 -5 V Collector cut-off current ICBO VCB=-20V,IE=0 -1 ?A Emitter cut-off current IEBO VEB=-4V,IC=0 -1 ?A DC current ga

4.18. 2sa1037ak.pdf Size:1466K _wietron

2SA1034
2SA1034
2SA1037AK PNP 3 P b Lead(Pb)-Free 1 2 SOT-23 Value V CEO -50 -60 -6.0 -150 200 1.6 625 TJ ,Tstg -1.0 -50 -50 -60 -6.0 -50 u -0.1 IE= ) O Vdc, 0 E=-50 u -0.1 -60 -0.1 u -6.0 WEITRON 1/5 24-Jul-07 http://www.weitron.com.tw 2SA1037AK ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain - - hFE 560 120 (IC=-1 mAdc,VCE=-6.0 Vdc) Collector-Emitter Saturation Voltage VCE(sat) - Vdc - -0.5 (IC=-50 mAdc, IB=-5mAdc) Output Capacitance PF - 4.0 5.0 Cob VCB=-12Vdc, IE=0A, f=1MHZ Current-Gain-Bandwidth Product fT - 140 - MHz (IE=-2 mAdc,VCE=-12 Vdc,f=30 MHZ) CLASSIFICATION OF hFE Q Rank R S Range 120-270 180-390 270-560 FR G3F Marking FQ WEITRON 2/5 24-Jul-07 http://www.weitron.com.tw 2SA1037AK –50 –35.0 –10 V = –10 V T = 25Β°C C E A T = 100Β°C A –31.5 –20 25Β°C –28.0 – 40Β°C –8 –10 –24.5 –50 β€

4.19. 2sa1036k.pdf Size:210K _wietron

2SA1034
2SA1034
2SA1036K PNP General Purpose Transistors 3 1 P b Lead(Pb)-Free 2 SOT-23 MAXIMUM RATINGS(Ta=25Β°C) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -32 V VCBO Collector-Base Voltage -40 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500* mA Total Device Dissipation PD 0.2 mW TA=25Β°C Tj Β°C Junction Temperature +150 Tstg Storage Temperature -55 to +150 Β°C *PD MAX. Must not be exceeded. Device Marking 2SA1036KP=HP , 2SA1036KQ=HQ , 2SA1036KR=HR WEITRON 1/4 02-Mar-06 http://www.weitron.com.tw 2SA1036K ELECTRICAL CHARACTERISTICS Characteristics Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage V(BR)CEO -32 - - V IC = -1mA, IE = 0A Collector-Base Breakdown Voltage V(BR)CBO -40 - - V IC = -100Β΅A, IB = 0A Emitter-Base Breakdown Voltage V(BR)EBO -5.0 - - V IE= 100Β΅A, IC=0 Collector Cutoff Current ICBO - - 1.0 Β΅A VCB = -20V, IC = 0A Emitter Cutoff Current IEBO - - 1.0 Β΅A VEB = -4V, IC = 0A ON CHA

4.20. 2sa1036kxlt1.pdf Size:329K _willas

2SA1034
2SA1034
FM120-M WILLAS 2SA1036KxLT1 THRU (*32V, *0.5A) Medium Power Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features β€’ Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H β€’ Low profile surface mounted application in order to optimize board space. 0.146(3.7) β€’ Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. β€’ High current capability, low forward voltage drop. FFeatures β€’ High surge capability. 3 1) Large IC. β€’ Guardring for overvoltage protection. ICMax. = *500mA 0.071(1.8) β€’ Ultra high-speed switching. 0.056(1.4) 2) Low VCE(sat). Ideal for low-voltage β€’ Silicon epitaxial planar chip, metal silicon junction. operation. β€’ Lead-free parts meet environmental standards of MIL-STD-19500 /228 3) We declare that the material of product β€’ RoHS product for packing code suffix

4.21. 2sa1037akxlt1.pdf Size:326K _willas

2SA1034
2SA1034
FM120-M WILLAS 2SA1037AKxLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features β€’ Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. PNP Silicon SOD-123H β€’ Low profile surface mounted application in order to optimize board space. Featrues 0.146(3.7) β€’ Low power loss, high efficiency. 0.130(3.3) 0.012(0.3) Typ. We declare that the material of product compliance with RoHS requirements. β€’ High current capability, low forward voltage drop. β€’ High surge capability. β€’ Guardring for overvoltage protection. 0.071(1.8) β€’ Ultra high-speed switching. 0.056(1.4) β€’ Silicon epitaxial planar chip, metal silicon junction. ORDERING INFORMATION β€’ Lead-free parts meet environmental standards of MIL-STD-19500 /228 Shipping Device Package β€’ RoHS product for packing code suffix

See also transistors datasheet: 2SA1027 , 2SA1028 , 2SA1029 , 2SA103 , 2SA1030 , 2SA1031 , 2SA1032 , 2SA1033 , 2N5551 , 2SA1035 , 2SA1036 , 2SA1036K , 2SA1037 , 2SA1037K , 2SA1037KLN , 2SA1038 , 2SA1039 .

Keywords

 2SA1034 Datasheet  2SA1034 Datenblatt  2SA1034 RoHS  2SA1034 Distributor
 2SA1034 Application Notes  2SA1034 Component  2SA1034 Circuit  2SA1034 Schematic
 2SA1034 Equivalent  2SA1034 Cross Reference  2SA1034 Data Sheet  2SA1034 Fiche Technique

 

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