| |
2SA1034
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2SA1034
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.2
Maximum collector-base voltage |Ucb|, V: 35
Maximum collector-emitter voltage |Uce|, V: 35
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 0.05
Maximum junction temperature (Tj), Β°C: 150
Transition frequency (ft), MHz: 280
Collector capacitance (Cc), pF: 3.3
Forward current transfer ratio (hFE), min: 180
Noise Figure, dB: - Package of 2SA1034
transistor: TO236
2SA1034
Equivalent Transistors - Cross-Reference Search 2SA1034
PDF document for downloads:
1.1. 2sa1034_2sa1035.pdf  Size:55K _panasonic  |
 | Transistor
2SA1034, 2SA1035
Silicon PNP epitaxial planer type
For low-frequency and low-noise amplification
Unit: mm
Complementary to 2SC2405 and 2SC2406
Features
+0.2
2.8 0.3
Low noise voltage NV.
+0.25
0.65± 0.15 1.5 0.05 0.65± 0.15
High foward current transfer ratio hFE.
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
1
packing.
3
Absolute Maximum Ratings (Ta=25?C)
2
Parameter Symbol Ratings Unit
Collector to 2SA1034 35
VCBO V
base voltage 2SA1035 55
0.1 to 0.3
Collector to 2SA1034 35
0.4± 0.2
VCEO V
emitter voltage 2SA1035 55
Emitter to base voltage VEBO 5 V
Peak collector current ICP 100 mA
1:Base JEDEC:TO236
Collector current IC 50 mA
2:Emitter EIAJ:SC59
3:Collector Mini Type Package
Collector power dissipation PC 200 mW
Junction temperature Tj 150 ?C
Marking symbol : F(2SA1034)
Storage temperature Tstg 55 ~ +150 ?C H(2SA1035)
Electrical Characteristics |
4.1. 2sa1036k_2sa1577_2sa854s.pdf Size:101K _rohm  |
 | Transistors
Medium Power Transistor
(*32V, *0.5A)
2SA1036K / 2SA1577 / 2SA854S
FFeatures FExternal dimensions (Units: mm)
1) Large IC.
ICMax. = *500mA
2) Low VCE(sat). Ideal for low-voltage
operation.
3) Complements the 2SC2411K /
2SC1741S / 2SC4097.
FStructure
Epitaxial planar type
PNP silicon transistor
(96-86-B11)
204
Transistors 2SA1036K / 2SA1577 / 2SA854S
FAbsolute maximum ratings (Ta = 25_C)
FElectrical characteristics (Ta = 25_C)
FPackaging specifications and hFE
hFE values are classified as follows.
205
Transistors 2SA1036K / 2SA1577 / 2SA854S
FElectrical characteristic curves
206
|
4.2. 2sa1037ak_2sa1576a_2sa1774_2sa933as.pdf Size:100K _rohm  |
 | Transistors
General Purpose Transistor
(*50V, *0.15A)
2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS
FFeatures FExternal dimensions (Units: mm)
1) Excellent hFE linearity.
2) Complements the 2SC2412K /
2SC4081 / 2SC4617 / 2SC1740S.
FStructure
Epitaxial planar type
PNP silicon transistor
(96-89-A32)
198
Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS
FAbsolute maximum ratings (Ta = 25_C)
FElectrical characteristics (Ta = 25_C)
FPackaging specifications and hFE
hFE values are classified as follows:
199
Transistors 2SA1037AK/2SA1576A/2SA1774/2SA933AS
FElectrical characteristic curves
200
|
4.3. 2sa1037ak_2sa1576a_2sa1774_2sa2029_2sa933as.pdf Size:168K _rohm  |
 | General Purpose Transistor (?50V, ?0.15A)
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029 / 2SA933AS
?Features ?Dimensions (Unit : mm)
1) Excellent hFE linearity.
2SA1037AK 2SA1576A
2) Complements the 2SC2412K / 2SC4081 /
2SC4617 / 2SC5658 / 2SC1740S.
1.25
1.6
2.1
?Structure 2.8
Epitaxial planar type.
PNP silicon transistor
0.1 to 0.4
0.3 to 0.6
Each lead has same dimensions
Each lead has same dimensions
(1) Emitter
ROHM : SMT3
(1) Emitter
ROHM : UMT3
(2) Base
EIAJ : SC-59
(2) Base
EIAJ : SC-70
(3) Collector
(3) Collector
Abbreviated symbol : F ? Abbreviated symbol : F ?
2SA1774 2SA2029
(1) 1.2
0.2 0.8 0.2
(2)
(3)
(2)
(3)
0.8
(1)
1.6
0.15Max.
0.1Min.
(1) Base
(1) Emitter ROHM : VMT3
ROHM : EMT3
(2) Base EIAJ : (2) Emitter
EIAJ : SC-75A
(3) Collecto
(3) Collector
Abbreviated symbol : F ? Abbreviated symbol : F ?
2SA933AS
4 2
0.45
2.5 0.5 0.45
5
( ) ( ) ( )
1 2 3
Taping specifications
(1) Emitter
ROHM : SPT
(2) Collector
E |
4.4. 2sa1579_2sa1514k_2sa1038s.pdf Size:75K _rohm  |
 | 2SA1579 / 2SA1514K / 2SA1038S
Transistors
High-voltage Amplifier Transistor
(-120V, -50mA)
2SA1579 / 2SA1514K / 2SA1038S
External dimensions (Unit : mm)
Features
1) High breakdown voltage. (BVCEO = -120V)
2SA1579
2) Complements the 2SC4102 / 2SC3906K / 2SC2389S.
1.25
2.1
0.1Min.
Each lead has same dimensions
ROHM : UMT3 (1) Emitter
EIAJ : SC-70 (2) Base
JEDEC : SOT-323 (3) Collector
2SA1514K
1.6
2.8
0.3Min.
Each lead has same dimensions
ROHM : SMT3 (1) Emitter
EIAJ : SC-59 (2) Base
JEDEC : SOT-346 (3) Collector
2SA1038S
4 2
0.45
2.5 0.5 0.45
5
Taping specifications
(1) (2) (3)
ROHM : SPT (1) Emitter
EIAJ : SC-72 (2) Collector
(3) Base
Rev.A 1/3
2
1
2.0
1.3
( )
( )
3
( )
0.65 0.65
0.3
0.2
0.15
0.9
0.7
0~0.1
1.9
2.9
2
1
( )
( )
3
0.95 0.95
( )
0.4
1.1
0.15
0.8
0 to 0.1
3Min.
15Min.
3
(
)
2SA1579 / 2SA1514K / 2SA1038S
Transistors
Absolute maximum ratings (Ta=25°C)
Parameter Symbol Limits Unit
Coll |
4.5. 2sa854_2sa1036k_2sa1577.pdf Size:101K _rohm  |
 | Transistors
Medium Power Transistor
(*32V, *0.5A)
2SA1036K / 2SA1577 / 2SA854S
FFeatures FExternal dimensions (Units: mm)
1) Large IC.
ICMax. = *500mA
2) Low VCE(sat). Ideal for low-voltage
operation.
3) Complements the 2SC2411K /
2SC1741S / 2SC4097.
FStructure
Epitaxial planar type
PNP silicon transistor
(96-86-B11)
204
Transistors 2SA1036K / 2SA1577 / 2SA854S
FAbsolute maximum ratings (Ta = 25_C)
FElectrical characteristics (Ta = 25_C)
FPackaging specifications and hFE
hFE values are classified as follows.
205
Transistors 2SA1036K / 2SA1577 / 2SA854S
FElectrical characteristic curves
206
|
4.6. 2sa1037ak.pdf Size:138K _rohm  |
 | General Purpose Transistor (-50V, -0.15A)
2SA1037AK / 2SA1576A / 2SA1774 / 2SA2029
?Features ?Dimensions (Unit : mm)
1) Excellent hFE linearity.
2SA1037AK 2SA1576A
2) Complements the 2SC2412K / 2SC4081 /
2SC4617 / 2SC5658.
1.25
?Structure 1.6
2.1
2.8
Epitaxial planar type.
PNP silicon transistor
0.1 to 0.4
0.3 to 0.6
Each lead has same dimensions
Each lead has same dimensions
(1) Emitter
ROHM : SMT3
(1) Emitter
ROHM : UMT3
(2) Base
EIAJ : SC-59
(2) Base
EIAJ : SC-70
(3) Collector
(3) Collector
Abbreviated symbol : F ? Abbreviated symbol : F ?
2SA1774 2SA2029
(1) 1.2
0.2 0.8 0.2
(2)
(3)
(2)
(3)
0.8
(1)
1.6
0.15Max.
0.1Min.
(1) Base
(1) Emitter ROHM : VMT3
ROHM : EMT3
(2) Base EIAJ : (2) Emitter
EIAJ : SC-75A
(3) Collecto
(3) Collector
Abbreviated symbol : F ? Abbreviated symbol : F ?
? Denotes hFE
www.rohm.com
2012.01 - Rev.C
1/3
c
0 2012 ROHM Co., Ltd. All rights reserved.
2
1
2.0
( )
( )
1.9
2.9
3
( )
2
1
( |
4.7. 2sa1036k.pdf Size:162K _rohm  |
 | Medium Power Transistor
2SA1036K
?Features ?Dimensions (Unit : mm)
1) Large IC.
ICMAX. = -500mA
2) Low VCE(sat). Ideal for low-voltage
2SA1036K
operation.
±
2.9 0.2
1.1 +0.2
3) Complements the 2SC2411K. ±
±
1.9 0.2 -0.1
±
0.8 0.1
0.95 0.95
(1) (2)
0~0.1
?Structure
Epitaxial planer type
(3)
PNP silicon transistor
+0.1
0.15 -0.06
0.4 +0.1
-0.05
All terminals have
same dimensions
(1) Emitter
ROHM : SMT3 (2) Base
?Absolute maximum ratings (Ta=25?C)
EIAJ : SC-59 (3) Collector
Parameter Symbol Limits Unit
Abbreviated symbol : H ?
Collector-base voltage V -40 V
CBO
Collector-emitter voltage V -32 V
CEO
? Denotes hFE
Emitter-base voltage V -5 V
EBO
Collector current I -0.5 A ?
C
Collector power dissipation P 0.2 W
C
Junction temperature Tj 150 °C
Storage temperature Tstg -55 to +150 °C
?PC MAX. must not be exceeded.
?Electrical characteristics (Ta=25?C)
Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown vo |
4.8. 2sa1029_2sa1030.pdf Size:24K _hitachi  |
 | 2SA1029, 2SA1030
Silicon PNP Epitaxial
Application
Low frequency amplifier
Complementary pair with 2SC458 and 2SC2308
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA1029, 2SA1030
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SA1029 2SA1030 Unit
Collector to base voltage VCBO 30 55 V
Collector to emitter voltage VCEO 30 50 V
Emitter to base voltage VEBO 5 5 V
Collector current IC 100 100 mA
Emitter current IE 100 100 mA
Collector power dissipation PC 300 300 mW
Junction temperature Tj 150 150 ° C
Storage temperature Tstg 55 to +150 55 to +150 ° C
Electrical Characteristics (Ta = 25°C)
2SA1029 2SA1030
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO 30 55 V IC = 10 ΅ A, IE = 0
breakdown voltage
Collector to emitter V(BR)CEO 30 50 V IC = 1 mA, RBE = ?
breakdown voltage
Emitter to base V(BR)EBO 5 5 V IE = 10 ΅ A, IC = 0
breakdown voltage
Collector cutoff curre |
4.9. 2sa1031_2sa1032.pdf Size:31K _hitachi  |
 | 2SA1031, 2SA1032
Silicon PNP Epitaxial
Application
Low frequency low noise amplifier
Complementary pair with 2SC458 (LG) and 2SC2310
Outline
TO-92 (1)
1. Emitter
2. Collector
3. Base
3
2
1
2SA1031, 2SA1032
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol 2SA1031 2SA1032 Unit
Collector to base voltage VCBO 30 55 V
Collector to emitter voltage VCEO 30 50 V
Emitter to base voltage VEBO 5 5 V
Collector current IC 100 100 mA
Emitter current IE 100 100 mA
Collector power dissipation PC 300 300 mW
Junction temperature Tj 150 150 ° C
Storage temperature Tstg 55 to +150 55 to +150 ° C
2
2SA1031, 2SA1032
Electrical Characteristics (Ta = 25°C)
2SA1031 2SA1032
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base V(BR)CBO 30 55 V IC = 10 ΅ A, IE = 0
breakdown voltage
Collector to emitter V(BR)CEO 30 50 V IC = 1 mA, RBE = ?
breakdown voltage
Emitter to base V(BR)EBO 5 5 V IE = 10 ΅ A, IC = 0
brea |
4.10. 2sa1037.pdf Size:368K _secos  |
 | 2SA1037
-0.15A, -60V
PNP Silicon General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of β-Cβ specifies halogen and lead free
FEATURES
SOT-23
Excellent hFE linearity.
A
Complements of the 2SC2412
L
3
3
MECHANICAL DATA
Top View
C B
Case: SOT-23, Molded Plastic 1
1 2
Weight: 0.008 grams(approx.)
2
K E
D
H J
CLASSIFICATION OF hFE F G
Product-Rank 2SA1037-Q 2SA1037-R 2SA1037-S
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
Range 120~270 180~390 270~560
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
Marking FQ FR FS
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50
PACKAGE INFORMATION
Collector
Package MPQ LeaderSize
3
SOT-23 3K 7β inch
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25Β°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO -60 V
Collector to Emitter Voltage VCEO -50 V
Em |
4.11. 2sa1036.pdf Size:694K _secos  |
 | 2SA1036
-0.5A, -40V
PNP Silicon General Purpose Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of β-Cβ specifies halogen and lead free
FEATURES
SOT-23
IC Max.= -500 mA
A
Low VCE(sat). Ideal for low-voltage operation.
L
3
3
Top View
C B
CLASSIFICATION OF hFE
1
1 2
Product-Rank 2SA1036-P 2SA1036-Q 2SA1036-R
2
K E
Range 82~180 120~270 180~390
D
Marking HP HQ HR
H J
F G
Millimeter Millimeter
REF. REF.
Min. Max. Min. Max.
PACKAGE INFORMATION
A 2.80 3.04 G 0.09 0.18
B 2.10 2.55 H 0.45 0.60
Package MPQ LeaderSize
C 1.20 1.40 J 0.08 0.177
D 0.89 1.15 K 0.6 REF.
SOT-23 3K 7β inch
E 1.78 2.04 L 0.89 1.02
F 0.30 0.50
Collector
3
1
Base
2
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25Β°C unless otherwise specified)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO -40 V
Collector to Emitter Voltage VCEO -32 V
Emitter to Base Voltage VEBO -5 V
mA
Collector Currrent IC -500
|
4.12. 2sa1037.pdf Size:338K _htsemi  |
 | 2SA1 037
SOT-23
TRANSISTOR(PNP)
FEATURES
β’ Excellent hFE linearity.
β’ Complments the 2SC2412
1. BASE
2. EMITTER
3. COLLECTOR
MARKING : FQ, FR, FS
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-50?A,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-50?A,IC=0 -6 V
Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 ?A
Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 ?A
DC current gain hFE VCE=-6V,IC=-1mA 120 560
Collector-emitter saturation volt |
4.13. 2sa1036.pdf Size:363K _htsemi  |
 | 2SA1 036
TRANSISTOR(PNP)
SOT-23
FEATURES
β’ Large IC. ICMax.= -500 mA
β’ Low VCE(sat). Ideal for low-voltage operation.
1. BASE
2. EMITTER
3. COLLECTOR
MARKING : HP, HQ, HR
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -32 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100?A,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V
Emitter-base breakdown voltage V(BR)EBO IE=-100?A,IC=0 -5 V
Collector cut-off current ICBO VCB=-20V,IE=0 -1 ?A
Emitter cut-off current IEBO VEB=-4V,IC=0 -1 ?A
DC current gain hFE VCE=-3V,IC=-10mA 82 390
Collecto |
4.14. 2sa1037.pdf Size:210K _lge  |
 | 2SA1037
SOT-23 Transistor(PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
Excellent hFE linearity.
Complments the 2SC2412
MARKING : FQ, FR, FS
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous 150 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-50?A,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-50?A,IC=0 -6 V
Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 ?A
Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 ?A
DC current gain hFE VCE=-6V,IC=-1mA |
4.15. 2sa1036.pdf Size:213K _lge  |
 | 2SA1036
SOT-23 Transistor(PNP)
SOT-23
1. BASE
2. EMITTER
3. COLLECTOR
Features
Large IC. ICMax.= -500 mA
Low VCE(sat). Ideal for low-voltage operation.
MARKING : HP, HQ, HR
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -32 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100?A,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V
Emitter-base breakdown voltage V(BR)EBO IE=-100?A,IC=0 -5 V
Collector cut-off current ICBO VCB=-20V,IE=0 -1 ?A
Emitter cut-off current IEBO VEB=-4V,IC=0 -1 ?A
DC current ga |
4.16. 2sa1037ak.pdf Size:214K _lge  |
 | 2SA1037AK
SOT-23-3L Transistor(PNP)
SOT-23-3L
1. BASE
2.92
2. EMITTER
0.35
3. COLLECTOR 1.17
Features
2.80 1.60
Excellent hFE linearity.
Complments the 2SC2412K.
0.15
1.90
MARKING : FQ, FR, FS
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -60 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous 150 mA
PC Collector Dissipation 200 mW
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-50?A,IE=0 -60 V
Collector-emitter breakdown voltage V(BR)CEO Ic=-1uA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-50?A,IC=0 -6 V
Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 ?A
Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 ? |
4.17. 2sa1036k.pdf Size:225K _lge  |
 | 2SA1036K
SOT-23-3L Transistor(PNP)
SOT-23-3L
1. BASE
2.92
2. EMITTER
0.35
1.17
3. COLLECTOR
Features
2.80 1.60
Large IC. IC= -500 mA
Low VCE(sat). Ideal for low-voltage operation.
0.15
1.90
MARKING : HP, HQ, HR
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -32 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150 ?
Tstg Storage Temperature -55-150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100?A,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V
Emitter-base breakdown voltage V(BR)EBO IE=-100?A,IC=0 -5 V
Collector cut-off current ICBO VCB=-20V,IE=0 -1 ?A
Emitter cut-off curre |
4.18. 2sa1037ak.pdf Size:1466K _wietron  |
 | 2SA1037AK
PNP
3
P b Lead(Pb)-Free
1
2
SOT-23
Value
V
CEO -50
-60
-6.0
-150
200
1.6
625
TJ ,Tstg
-1.0
-50
-50 -60
-6.0
-50
u
-0.1
IE= ) O
Vdc, 0
E=-50
u
-0.1
-60
-0.1 u
-6.0
WEITRON
1/5 24-Jul-07
http://www.weitron.com.tw
2SA1037AK
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain
-
-
hFE 560
120
(IC=-1 mAdc,VCE=-6.0 Vdc)
Collector-Emitter Saturation Voltage
VCE(sat) - Vdc
- -0.5
(IC=-50 mAdc, IB=-5mAdc)
Output Capacitance
PF
- 4.0 5.0
Cob
VCB=-12Vdc, IE=0A, f=1MHZ
Current-Gain-Bandwidth Product
fT
- 140 - MHz
(IE=-2 mAdc,VCE=-12 Vdc,f=30 MHZ)
CLASSIFICATION OF hFE
Q
Rank R S
Range 120-270
180-390 270-560
FR G3F
Marking FQ
WEITRON
2/5 24-Jul-07
http://www.weitron.com.tw
2SA1037AK
β50 β35.0
β10
V = β10 V T = 25Β°C
C E
A
T = 100Β°C
A
β31.5
β20 25Β°C
β28.0
β 40Β°C
β8
β10
β24.5
β50
β |
4.19. 2sa1036k.pdf Size:210K _wietron  |
 | 2SA1036K
PNP General Purpose Transistors
3
1
P b Lead(Pb)-Free
2
SOT-23
MAXIMUM RATINGS(Ta=25Β°C)
Rating Symbol Value Unit
Collector-Emitter Voltage
VCEO
-32 V
VCBO
Collector-Base Voltage -40 V
VEBO
Emitter-Base Voltage -5.0 V
IC
Collector Current - Continuous -500* mA
Total Device Dissipation
PD
0.2 mW
TA=25Β°C
Tj Β°C
Junction Temperature +150
Tstg
Storage Temperature -55 to +150 Β°C
*PD MAX. Must not be exceeded.
Device Marking
2SA1036KP=HP , 2SA1036KQ=HQ , 2SA1036KR=HR
WEITRON
1/4 02-Mar-06
http://www.weitron.com.tw
2SA1036K
ELECTRICAL CHARACTERISTICS
Characteristics Symbol Min Typ Max Unit
Collector-Emitter Breakdown Voltage
V(BR)CEO
-32 - - V
IC = -1mA, IE = 0A
Collector-Base Breakdown Voltage
V(BR)CBO
-40 - - V
IC = -100Β΅A, IB = 0A
Emitter-Base Breakdown Voltage
V(BR)EBO
-5.0 - - V
IE= 100Β΅A, IC=0
Collector Cutoff Current
ICBO
- - 1.0 Β΅A
VCB = -20V, IC = 0A
Emitter Cutoff Current
IEBO
- - 1.0 Β΅A
VEB = -4V, IC = 0A
ON CHA |
See also transistors datasheet: 2SA1027
, 2SA1028
, 2SA1029
, 2SA103
, 2SA1030
, 2SA1031
, 2SA1032
, 2SA1033
, BC108
, 2SA1035
, 2SA1036
, 2SA1036K
, 2SA1037
, 2SA1037K
, 2SA1037KLN
, 2SA1038
, 2SA1039
. Keywords| 2SA1034
Datasheet | 2SA1034
Datenblatt | 2SA1034
RoHS | 2SA1034
Distributor | | 2SA1034
Application Notes | 2SA1034
Component | 2SA1034
Circuit | 2SA1034
Schematic | | 2SA1034
Equivalent | 2SA1034
Cross Reference | 2SA1034
Data Sheet | 2SA1034
Fiche Technique |
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