| |
2SA1302
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2SA1302
Material of transistor: Si
Polarity: PNP
Maximum collector power dissipation (Pc), W: 150
Maximum collector-base voltage |Ucb|, V: 200
Maximum collector-emitter voltage |Uce|, V: 200
Maximum emitter-base voltage |Ueb|, V: 5
Maximum collector current |Ic max|, A: 15
Maximum junction temperature (Tj), °C: 150
Transition frequency (ft), MHz: 30
Collector capacitance (Cc), pF: 470
Forward current transfer ratio (hFE), min: 55
Noise Figure, dB: - Package of 2SA1302
transistor: X104-1
2SA1302
Equivalent Transistors - Cross-Reference Search 2SA1302
PDF document for downloads:
1.1. 2sa1302.pdf  Size:114K _mospec  |
 | A
A
A
|
1.2. 2sa1302.pdf Size:128K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1302
DESCRIPTION
·High Current Capability
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -200V(Min)
·Complement to Type 2SC3281
APPLICATIONS
·Power amplifier applications
·Recommend for 100W high fidelity audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage -200 V
VCEO Collector-Emitter Voltage -200 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -15 A
IBB Base Current-Continuous -1.5 A
Collector Power Dissipation
PC @ TC=25? 150 W
TJ Junction Temperature 150 ?
Storage Temperature Range -55~150 ?
Tstg
isc Website:www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1302
ELECTRICAL CHARACTERISTICS
TC=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS M |
4.1. 2sa1306b_2sc3298b.pdf Size:397K _motorola 4.2. 2sa1304.pdf Size:154K _toshiba 4.3. 2sa1300.pdf Size:206K _toshiba  |
 | 2SA1300
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1300
Strobe Flash Applications
Unit: mm
Medium Power Amplifier Applications
High DC current gain and excellent hFE linearity
: h = 140~600 (V = -1 V, I = -0.5 A)
FE (1) CE C
: h = 60 (min), 120 (typ.) (V = -1 V, I = -4 A)
FE (2) CE C
Low saturation voltage: V = -0.5 V (max)
CE (sat)
(I = -2 A, I = -50 mA)
C B
Maximum Ratings (Ta =
= 25C)
=
=
Characteristics Symbol Rating Unit
Collector-base voltage VCBO -20 V
VCES -20
Collector-emitter voltage V
VCEO -10
Emitter-base voltage VEBO -6 V
DC IC -2
JEDEC TO-92
Collector current A
Pulsed
ICP -5
JEITA SC-43
(Note 1)
TOSHIBA 2-5F1B
Base current IB -0.2 A
Collector power dissipation PC 750 mW Weight: 0.21 g (typ.)
Junction temperature Tj 150 C
Storage temperature range Tstg -55~150 C
Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max)
Electrical Characteristics (Ta =
= 25C)
=
=
Characteristics S |
4.4. 2sa1309a_e.pdf Size:39K _panasonic  |
 | Transistor
2SA1309A
Silicon PNP epitaxial planer type
For low-frequency amplification
Unit: mm
Complementary to 2SC3311A
4.0 0.2
Features
High foward current transfer ratio hFE.
Allowing supply with the radial taping.
Optimum for high-density mounting.
marking
Absolute Maximum Ratings (Ta=25?C)
1 2 3
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 60 V
1.27 1.27
Collector to emitter voltage VCEO 50 V
2.54 0.15
Emitter to base voltage VEBO 7 V
Peak collector current ICP 200 mA
1:Emitter
Collector current IC 100 mA
2:Collector EIAJ:SC72
Collector power dissipation PC 300 mW
3:Base New S Type Package
Junction temperature Tj 150 ?C
Storage temperature Tstg 55 ~ +150 ?C
Electrical Characteristics (Ta=25?C)
Parameter Symbol Conditions min typ max Unit
ICBO VCB = 10V, IE = 0 100 nA
Collector cutoff current
ICEO VCE = 10V, IB = 0 1 A
Collector to base voltage VCBO IC = 10 A, IE = 0 60 V
Collector to emitter voltage VCEO IC = 2mA |
4.5. 2sa1309a.pdf Size:35K _panasonic  |
 | Transistor
2SA1309A
Silicon PNP epitaxial planer type
For low-frequency amplification
Unit: mm
Complementary to 2SC3311A
4.0 0.2
Features
High foward current transfer ratio hFE.
Allowing supply with the radial taping.
Optimum for high-density mounting.
marking
Absolute Maximum Ratings (Ta=25?C)
1 2 3
Parameter Symbol Ratings Unit
Collector to base voltage VCBO 60 V
1.27 1.27
Collector to emitter voltage VCEO 50 V
2.54 0.15
Emitter to base voltage VEBO 7 V
Peak collector current ICP 200 mA
1:Emitter
Collector current IC 100 mA
2:Collector EIAJ:SC72
Collector power dissipation PC 300 mW
3:Base New S Type Package
Junction temperature Tj 150 ?C
Storage temperature Tstg 55 ~ +150 ?C
Electrical Characteristics (Ta=25?C)
Parameter Symbol Conditions min typ max Unit
ICBO VCB = 10V, IE = 0 100 nA
Collector cutoff current
ICEO VCE = 10V, IB = 0 1 A
Collector to base voltage VCBO IC = 10 A, IE = 0 60 V
Collector to emitter voltage VCEO IC = 2mA |
4.6. 2sa1300.pdf Size:395K _secos  |
 | 2SA1300
-2 A, -20 V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92
FEATURES
? High DC Current gain and excellent hFE linearity
? Low Saturation Voltage
G H
?Emitter
?Collector
?Base
J
CLASSIFICATION OF hFE(1)
A D
Product-Rank 2SA1300-Y 2SA1300-GR 2SA1300-BL Millimeter
REF.
B Min. Max.
A 4.40 4.70
Range 140~280 200~400 300~600
B 4.30 4.70
K
C 12.70 -
D 3.30 3.81
E 0.36 0.56
F 0.36 0.51
E C F
G 1.27 TYP.
H 1.10 -
J 2.42 2.66
K 0.36 0.76
Collector
??
??
Base
??
Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter Symbol Rating Unit
Collector to Base Voltage VCBO -20 V
Collector to Emitter Voltage VCEO -10 V
Emitter to Base Voltage VEBO -6 V
Collector Current - Continuous IC -2 A
Collector Power Dissipation PC 750 mW
Junction, Storage Temperature TJ, TSTG 150, -55~150 °C
ELECTRICAL CHARACTERISTICS (TA |
4.7. 2sa1307.pdf Size:69K _wingshing  |
 | 2SA1307 PNP EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER
VERTICAL DEFLECTION OUTPUT
SC-67
Complement to 2SC3299
ABSOLUTE MAXIMUM RATINGS (T =25?
?)
?
?
A
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base voltage VEBO -5 V
Collector Current (DC) IC -5 A
Collector Dissipation (Tc=25? PC 20 W
?
?
?
Junction Temperature Tj 150 ?
?
?
?
Storage Temperature Tstg -50~150 ?
ELECTRICAL CHARACTERISTICS (TA=25?
?)
?
?
Characteristic Symbol Test Condition Min Typ Max Unit
Collector Cutoff Current ICBO VCB= -150V , IE=0 -10 A
Emitter Cutoff Current IEBO VEB= -5V , IC=0 -10 A
DC Current Gain hFE1 VCE= -1.0V ,IC=-1.0A 70 240
Collector- Emitter Saturation Voltage VCE(sat) IC=-3A ,IB=-0.15mA -0.4 V
Current Gain Bandwidth Product Ft VCE= -10V ,IC=-0.5A 60 MHZ
Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153
Homepage: http://www.wingshing.com E-mail |
4.8. 2sa1301.pdf Size:25K _wingshing  |
 | 2SA1301 PNP PLANAR SILICON TRANSISTOR
AUDIO POWER AMPLIFIER
DC TO DC CONVERTER
2-21F1A
High Current Capability
High Power Dissipation
Complementary to 2SC3280
ABSOLUTE MAXIMUM RATING (Ta=25C
C)
C
C
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO -160 V
Collector-Emitter Voltage VCEO -160 V
Emitter-Base voltage VEBO -6 V
Collector Current (DC) IC -12 A
Collector Dissipation PC 120 W
Junction Temperature Tj 150
C
Storage Temperature Tstg -55~150
C
ELECTRICAL CHARACTERISTICS (Ta=25C
C)
C
C
Characterristic Symbol Test Condition Min Typ Max Unit
Collector Base Breakdown Voltage BVCBO IC=-10mA IE=0 -160 V
Collector Emitter Breakdown Voltage BVCEO IC=-5 mA RBE=? -160 V
Emitter Base Breakdown Voltage BVEBO IE=-4mA IC=0 -6 V
Collector Cutoff Current ICBO VCB=-80V IE=0 -0.1 mA
Emitter Cutoff Current IEBO VEB=-4V IC=0 -0.1 mA
*DC Current Gain hFE1 VCE=-5V IC=-1A 55 160
DC Current Gain hFE2 VCE=-5V IC=-5A 50
Collector- Emitte |
4.9. 2sa1303.pdf Size:28K _sanken-ele  |
 | LAPT 2SA1303
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284)
Application : Audio and General Purpose
(Ta=25C) External Dimensions MT-100(TO3P)
Absolute maximum ratings (Ta=25C) Electrical Characteristics
Symbol Ratings Unit Symbol Conditions Ratings Unit
0.2
4.8
0.4
15.6
0.1
9.6 2.0
VCBO 150 V ICBO VCB=150V 100max A
VCEO 150 V IEBO VEB=5V 100max A
VEBO V(BR)CEO IC=25mA 150min V
5 V
a
0.1
o3.2
IC hFE VCE=4V, IC=5A 50min
14 A
b
IB VCE(sat) IC=5A, IB=0.5A 2.0max V
3 A
PC fT VCE=12V, IE=2A 50typ MHz 2
125(Tc=25C) W
Tj COB VCB=10V, f=1MHz 400typ pF 3
150 C
1.05+0.2 0.65+0.2
-0.1 -0.1
Tstg 55 +150 C
to
to to to
? hFE Rank O(50 100), P(70 140), Y(90 180)
0.1 0.1
5.45 5.45 1.4
Typical Switching Characteristics (Common Emitter)
B C E
Weight : Approx 6.0g
VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf
(V) (?) (A) (V) (V) (mA) (mA) ( s) ( s) ( s)
a. Part No.
b. Lot No.
60 12 5 10 5 500 500 0.25typ |
4.10. 2sa1305.pdf Size:130K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1305
DESCRIPTION ·
·With TO-220Fa package
·Low collector saturation voltage
·High transition frequency
APPLICATIONS
·High current switching applications
PINNING
PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
Absolute maximum ratings (Ta=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter -30 V
VCEO Collector-emitter voltage Open base -30
VEBO Emitter-base voltage Open collector -5 V
IC Collector current -3 A
TC=25? 15
PC Collector power dissipation W
Ta=25? 2
Junction temperature 150 ?
Tj
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1305
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IBB=0 -30 V
V(BR)EBO Emitter-base breakdown voltage IE=-50?A , IC=0 |
4.11. 2sa1307.pdf Size:173K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1307
DESCRIPTION ·
·With TO-220Fa package
·Complement to type 2SC3299
·Low saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
Absolute maximum ratings(Ta=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter -60 V
VCEO Collector-emitter voltage Open base -50
VEBO Emitter-base voltage Open collector -5 V
IC Collector current -5 A
IB Base current -1 A
TC=25? 20
PC Collector power dissipation W
Ta=25? 2
Junction temperature 150 ?
Tj
Tstg Storage temperature -55~150 ?
?????
INCHANGE SEMICONDUCTOR
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1307
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=- |
4.12. 2sa1304.pdf Size:176K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1304
DESCRIPTION ·
·With TO-220Fa package
·Complement to type 2SC3296
·High breakdown voltage
APPLICATIONS
·Power amplifier applications
·Vertical output applicatios
PINNING
PIN DESCRIPTION
1 Emitter
2 Collector
3 Base
Absolute maximum ratings(Tc=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter -150 V
VCEO Collector-emitter voltage Open base -150
VEBO Emitter-base voltage Open collector -5 V
IC Collector current -1.5 A
IBB Base current -0.5 A
TC=25? 20
PC Collector power dissipation W
Ta=25? 2
Junction temperature 150 ?
Tj
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1304
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IBB=0 -150 V
VCEsat Co |
4.13. 2sa1308.pdf Size:139K _inchange_semiconductor  |
 | Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1308
DESCRIPTION
·With TO-220F package
·Low collector saturation voltage
APPLICATIONS
·High current switching applications
PINNING
PIN DESCRIPTION
1 Base
2 Collector
Fig.1 simplified outline (TO-220F) and symbol
3 Emitter
Absolute maximum ratings (Ta=25?)
SYMBOL PARAMETER CONDITIONS VALUE UNIT
VCBO Collector-base voltage Open emitter -100 V
VCEO Collector-emitter voltage Open base -100 V
VEBO Emitter-base voltage Open collector -7 V
IC Collector current -5 A
ICM Collector current-peak -8 A
PC Collector dissipation TC=25? 30 W
Tj Junction temperature 150 ?
Tstg Storage temperature -55~150 ?
Inchange Semiconductor Product Specification
Silicon PNP Power Transistors 2SA1308
CHARACTERISTICS
Tj=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IBB=0 -100 V
VCEsat Collector-emitte |
4.14. 2sa1306_a_b.pdf Size:140K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors 2SA1306/A/B
DESCRIPTION
·Good Linearity of hFE
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -160V(Min)-2SA1306
= -180V(Min)-2SA1306A
= -200V(Min)-2SA1306B
·Complement to Type 2SC3298/A/B
APPLICATIONS
·Power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
2SA1306 -160
Collector-Base
VCBO 2SA1306A -180 V
Voltage
2SA1306B -200
2SA1306 -160
VCEO Collector-Emitter 2SA1306A -180 V
Voltage
2SA1306B -200
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -1.5 A
IBB Base Current-Continuous -0.15 A
Collector Power Dissipation
PC @ TC=25? 20 W
TJ Junction Temperature 150 ?
Storage Temperature Range -55~150 ?
Tstg
isc Website:www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistors 2SA1306/A/B
ELECTRICAL CHARACTERIST |
4.15. 2sa1301.pdf Size:78K _inchange_semiconductor  |
 | INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1301
DESCRIPTION
·High Power Dissipation
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -160V(Min)
·Complement to Type 2SC3280
APPLICATIONS
·Power amplifier applications
·Recommend for 80W high fidelity audio frequency amplifier
output stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage -160 V
VCEO Collector-Emitter Voltage -160 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -12 A
IB Base Current-Continuous -1.2 A
Collector Power Dissipation
PC 120 W
@ TC=25?
TJ Junction Temperature 150 ?
Storage Temperature Range -55~150 ?
Tstg
isc Website:www.iscsemi.cn
INCHANGE Semiconductor isc Product Specification
isc Silicon PNP Power Transistor 2SA1301
ELECTRICAL CHARACTERISTICS
TC=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector |
4.16. 2sa1303.pdf Size:134K _inchange_semiconductor  |
 | INCHANGE Semiconductor Product Specification
Silicon PNP Power Transistor 2SA1303
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
V(BR)CEO= -150V(Min)
·Good Linearity of hFE
·Complement to Type 2SC3284
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25?)
SYMBOL PARAMETER VALUE UNIT
VCBO Collector-Base Voltage -150 V
VCEO Collector-Emitter Voltage -150 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current-Continuous -14 A
IBB Base Current-Continuous -3 A
Collector Power Dissipation
PC @ TC=25? 125 W
TJ Junction Temperature 150 ?
Storage Temperature Range -55~150 ?
Tstg
INCHANGE Semiconductor Product Specification
Silicon PNP Power Transistor 2SA1303
ELECTRICAL CHARACTERISTICS
TC=25? unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -150 V
Collector-Emitter Saturation Voltage IC= -5A; IBB= -0.5A |
4.17. 2sa1300.pdf Size:176K _lge  |
 | 2SA1300(PNP)
TO-92 Bipolar Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Features
High DC Current gain and excellent hFE linearity
Low saturation voltage
MAXIMUM RATINGS (TA=25? unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -20 V
VCEO Collector-Emitter Voltage -10 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -2 A
Dimensions in inches and (millimeters)
PC Collector Power Dissipation 0.75 W
Tj Junction Temperature 150 ?
Tstg Storage Temperature -55 to +150 ?
ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-1mA , IE=0 -20 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA , IB=0 -10 V
Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -6 V
Collector cut-off current ICBO VCB=-20 V , IE=0 -0.1 ВµA
Emitter cut-off current IEBO VEB=-6 V , IC=0 -0.1 ВµA
DC curr |
See also transistors datasheet: 2SA130
, 2SA1300
, 2SA1300-BL
, 2SA1300-G
, 2SA1300-Y
, 2SA1301
, 2SA1301-O
, 2SA1301-R
, 2N4401
, 2SA1302-O
, 2SA1302-R
, 2SA1303
, 2SA1303-O
, 2SA1303-P
, 2SA1303-Y
, 2SA1304
, 2SA1305
. Keywords| 2SA1302
Datasheet | 2SA1302
Datenblatt | 2SA1302
RoHS | 2SA1302
Distributor | | 2SA1302
Application Notes | 2SA1302
Component | 2SA1302
Circuit | 2SA1302
Schematic | | 2SA1302
Equivalent | 2SA1302
Cross Reference | 2SA1302
Data Sheet | 2SA1302
Fiche Technique |
|
