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2SA1306 Transistor. Datasheet pdf. Equivalent

Type Designator: 2SA1306

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 160 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 30 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: TO218

2SA1306 Transistor Equivalent Substitute - Cross-Reference Search

2SA1306 Datasheet PDF:

1.1. 2sa1306b_2sc3298b.pdf Size:397K _motorola

2SA1306
2SA1306

1.2. 2sa1306_2sa1306a_2sa1306b.pdf Size:159K _jmnic

2SA1306
2SA1306

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION · ·With TO-220Fa package ·Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS

1.3. 2sa1306_a_b.pdf Size:140K _inchange_semiconductor

2SA1306
2SA1306

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B ·Complement to Type 2SC3298/A/B APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MA

Datasheet: 2SA1302O , 2SA1302R , 2SA1303 , 2SA1303O , 2SA1303P , 2SA1303Y , 2SA1304 , 2SA1305 , S9012 , 2SA1306A , 2SA1306AO , 2SA1306AY , 2SA1306B , 2SA1306BO , 2SA1306BY , 2SA1306O , 2SA1306Y .

 


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