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2SA1306
  2SA1306
  2SA1306
 
2SA1306
  2SA1306
  2SA1306
 
2SA1306
  2SA1306
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2SA1306 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SA1306 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SA1306

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 20

Maximum collector-base voltage |Ucb|, V: 160

Maximum collector-emitter voltage |Uce|, V: 160

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 1.5

Maksimalna temperatura (Tj), °C: 125

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 30

Forward current transfer ratio (hFE), min: 70

Noise Figure, dB: -

Package of 2SA1306 transistor: TO218

2SA1306 Equivalent Transistors - Cross-Reference Search

2SA1306 PDF doc:

1.1. 2sa1306b_2sc3298b.pdf Size:397K _motorola

2SA1306
2SA1306

1.2. 2sa1306_a_b.pdf Size:140K _inchange_semiconductor

2SA1306
2SA1306
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B ·Complement to Type 2SC3298/A/B APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT 2SA1306 -160 Collector-Base VCBO 2SA1306A -180 V Voltage 2SA1306B -200 2SA1306 -160 VCEO Collector-Emitter 2SA1306A -180 V Voltage 2SA1306B -200 VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.5 A IBB Base Current-Continuous -0.15 A Collector Power Dissipation PC @ TC=25? 20 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1306/A/B ELECTRICAL CHARACTERIST

4.1. 2sa1300.pdf Size:206K _toshiba

2SA1306
2SA1306
2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications High DC current gain and excellent hFE linearity : h = 140~600 (V = -1 V, I = -0.5 A) FE (1) CE C : h = 60 (min), 120 (typ.) (V = -1 V, I = -4 A) FE (2) CE C Low saturation voltage: V = -0.5 V (max) CE (sat) (I = -2 A, I = -50 mA) C B Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V VCES -20 Collector-emitter voltage V VCEO -10 Emitter-base voltage VEBO -6 V DC IC -2 JEDEC TO-92 Collector current A Pulsed ICP -5 JEITA SC-43 (Note 1) TOSHIBA 2-5F1B Base current IB -0.2 A Collector power dissipation PC 750 mW Weight: 0.21 g (typ.) Junction temperature Tj 150 C Storage temperature range Tstg -55~150 C Note 1: Pulse width = 10 ms (max), duty cycle = 30% (max) Electrical Characteristics (Ta = = 25C) = = Characteristics S

4.2. 2sa1304.pdf Size:154K _toshiba

2SA1306
2SA1306

4.3. 2sa1309a.pdf Size:35K _panasonic

2SA1306
2SA1306
Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SC3311A 4.0 0.2 Features High foward current transfer ratio hFE. Allowing supply with the radial taping. Optimum for high-density mounting. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V 1.27 1.27 Collector to emitter voltage VCEO 50 V 2.54 0.15 Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA 1:Emitter Collector current IC 100 mA 2:Collector EIAJ:SC72 Collector power dissipation PC 300 mW 3:Base New S Type Package Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 10V, IE = 0 100 nA Collector cutoff current ICEO VCE = 10V, IB = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA

4.4. 2sa1309a_e.pdf Size:39K _panasonic

2SA1306
2SA1306
Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Unit: mm Complementary to 2SC3311A 4.0 0.2 Features High foward current transfer ratio hFE. Allowing supply with the radial taping. Optimum for high-density mounting. marking Absolute Maximum Ratings (Ta=25?C) 1 2 3 Parameter Symbol Ratings Unit Collector to base voltage VCBO 60 V 1.27 1.27 Collector to emitter voltage VCEO 50 V 2.54 0.15 Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA 1:Emitter Collector current IC 100 mA 2:Collector EIAJ:SC72 Collector power dissipation PC 300 mW 3:Base New S Type Package Junction temperature Tj 150 ?C Storage temperature Tstg 55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB = 10V, IE = 0 100 nA Collector cutoff current ICEO VCE = 10V, IB = 0 1 A Collector to base voltage VCBO IC = 10 A, IE = 0 60 V Collector to emitter voltage VCEO IC = 2mA

4.5. 2sa1302.pdf Size:114K _mospec

2SA1306
2SA1306
A A A

4.6. 2sa1300.pdf Size:395K _secos

2SA1306
2SA1306
2SA1300 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? High DC Current gain and excellent hFE linearity ? Low Saturation Voltage G H ?Emitter ?Collector ?Base J CLASSIFICATION OF hFE(1) A D Product-Rank 2SA1300-Y 2SA1300-GR 2SA1300-BL Millimeter REF. B Min. Max. A 4.40 4.70 Range 140~280 200~400 300~600 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ?? ?? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -20 V Collector to Emitter Voltage VCEO -10 V Emitter to Base Voltage VEBO -6 V Collector Current - Continuous IC -2 A Collector Power Dissipation PC 750 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA

4.7. 2sa1307.pdf Size:69K _wingshing

2SA1306
2SA1306
2SA1307 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SC3299 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -5 A Collector Dissipation (Tc=25? PC 20 W ? ? ? Junction Temperature Tj 150 ? ? ? ? Storage Temperature Tstg -50~150 ? ELECTRICAL CHARACTERISTICS (TA=25? ?) ? ? Characteristic Symbol Test Condition Min Typ Max Unit Collector Cutoff Current ICBO VCB= -150V , IE=0 -10 A Emitter Cutoff Current IEBO VEB= -5V , IC=0 -10 A DC Current Gain hFE1 VCE= -1.0V ,IC=-1.0A 70 240 Collector- Emitter Saturation Voltage VCE(sat) IC=-3A ,IB=-0.15mA -0.4 V Current Gain Bandwidth Product Ft VCE= -10V ,IC=-0.5A 60 MHZ Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail

4.8. 2sa1301.pdf Size:25K _wingshing

2SA1306
2SA1306
2SA1301 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER 2-21F1A High Current Capability High Power Dissipation Complementary to 2SC3280 ABSOLUTE MAXIMUM RATING (Ta=25C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -160 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -12 A Collector Dissipation PC 120 W Junction Temperature Tj 150 C Storage Temperature Tstg -55~150 C ELECTRICAL CHARACTERISTICS (Ta=25C C) C C Characterristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage BVCBO IC=-10mA IE=0 -160 V Collector Emitter Breakdown Voltage BVCEO IC=-5 mA RBE=? -160 V Emitter Base Breakdown Voltage BVEBO IE=-4mA IC=0 -6 V Collector Cutoff Current ICBO VCB=-80V IE=0 -0.1 mA Emitter Cutoff Current IEBO VEB=-4V IC=0 -0.1 mA *DC Current Gain hFE1 VCE=-5V IC=-1A 55 160 DC Current Gain hFE2 VCE=-5V IC=-5A 50 Collector- Emitte

4.9. 2sa1303.pdf Size:28K _sanken-ele

2SA1306
2SA1306
LAPT 2SA1303 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284) Application : Audio and General Purpose (Ta=25C) External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 150 V ICBO VCB=150V 100max A VCEO 150 V IEBO VEB=5V 100max A VEBO V(BR)CEO IC=25mA 150min V 5 V a 0.1 o3.2 IC hFE VCE=4V, IC=5A 50min 14 A b IB VCE(sat) IC=5A, IB=0.5A 2.0max V 3 A PC fT VCE=12V, IE=2A 50typ MHz 2 125(Tc=25C) W Tj COB VCB=10V, f=1MHz 400typ pF 3 150 C 1.05+0.2 0.65+0.2 -0.1 -0.1 Tstg 55 +150 C to to to to ? hFE Rank O(50 100), P(70 140), Y(90 180) 0.1 0.1 5.45 5.45 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 6.0g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (mA) (mA) ( s) ( s) ( s) a. Part No. b. Lot No. 60 12 5 10 5 500 500 0.25typ

4.10. 2sa1308.pdf Size:139K _inchange_semiconductor

2SA1306
2SA1306
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1308 DESCRIPTION ·With TO-220F package ·Low collector saturation voltage APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -100 V VCEO Collector-emitter voltage Open base -100 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -5 A ICM Collector current-peak -8 A PC Collector dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1308 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ; IBB=0 -100 V VCEsat Collector-emitte

4.11. 2sa1307.pdf Size:173K _inchange_semiconductor

2SA1306
2SA1306
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1307 DESCRIPTION · ·With TO-220Fa package ·Complement to type 2SC3299 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -50 VEBO Emitter-base voltage Open collector -5 V IC Collector current -5 A IB Base current -1 A TC=25? 20 PC Collector power dissipation W Ta=25? 2 Junction temperature 150 ? Tj Tstg Storage temperature -55~150 ? ????? INCHANGE SEMICONDUCTOR Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1307 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-

4.12. 2sa1303.pdf Size:134K _inchange_semiconductor

2SA1306
2SA1306
INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1303 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Type 2SC3284 APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -150 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -14 A IBB Base Current-Continuous -3 A Collector Power Dissipation PC @ TC=25? 125 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1303 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -150 V Collector-Emitter Saturation Voltage IC= -5A; IBB= -0.5A

4.13. 2sa1302.pdf Size:128K _inchange_semiconductor

2SA1306
2SA1306
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1302 DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·Complement to Type 2SC3281 APPLICATIONS ·Power amplifier applications ·Recommend for 100W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -15 A IBB Base Current-Continuous -1.5 A Collector Power Dissipation PC @ TC=25? 150 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1302 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS M

4.14. 2sa1305.pdf Size:130K _inchange_semiconductor

2SA1306
2SA1306
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1305 DESCRIPTION · ·With TO-220Fa package ·Low collector saturation voltage ·High transition frequency APPLICATIONS ·High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -30 V VCEO Collector-emitter voltage Open base -30 VEBO Emitter-base voltage Open collector -5 V IC Collector current -3 A TC=25? 15 PC Collector power dissipation W Ta=25? 2 Junction temperature 150 ? Tj Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1305 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IBB=0 -30 V V(BR)EBO Emitter-base breakdown voltage IE=-50?A , IC=0

4.15. 2sa1304.pdf Size:176K _inchange_semiconductor

2SA1306
2SA1306
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1304 DESCRIPTION · ·With TO-220Fa package ·Complement to type 2SC3296 ·High breakdown voltage APPLICATIONS ·Power amplifier applications ·Vertical output applicatios PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Tc=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 VEBO Emitter-base voltage Open collector -5 V IC Collector current -1.5 A IBB Base current -0.5 A TC=25? 20 PC Collector power dissipation W Ta=25? 2 Junction temperature 150 ? Tj Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1304 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA , IBB=0 -150 V VCEsat Co

4.16. 2sa1301.pdf Size:78K _inchange_semiconductor

2SA1306
2SA1306
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1301 DESCRIPTION ·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Complement to Type 2SC3280 APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous -1.2 A Collector Power Dissipation PC 120 W @ TC=25? TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg isc Website:www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1301 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector

4.17. 2sa1300.pdf Size:176K _lge

2SA1306
2SA1306
2SA1300(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC Current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -10 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -2 A Dimensions in inches and (millimeters) PC Collector Power Dissipation 0.75 W Tj Junction Temperature 150 ? Tstg Storage Temperature -55 to +150 ? ELECTRICAL CHARACTERISTICS (Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-1mA , IE=0 -20 V Collector-emitter breakdown voltage V(BR)CEO IC=-10mA , IB=0 -10 V Emitter-base breakdown voltage V(BR)EBO IE=-1mA, IC=0 -6 V Collector cut-off current ICBO VCB=-20 V , IE=0 -0.1 ВµA Emitter cut-off current IEBO VEB=-6 V , IC=0 -0.1 ВµA DC curr

See also transistors datasheet: 2SA1302-O , 2SA1302-R , 2SA1303 , 2SA1303-O , 2SA1303-P , 2SA1303-Y , 2SA1304 , 2SA1305 , S9012 , 2SA1306A , 2SA1306A-O , 2SA1306A-Y , 2SA1306B , 2SA1306B-O , 2SA1306B-Y , 2SA1306-O , 2SA1306-Y .

Keywords

 2SA1306 Datasheet  2SA1306 Datenblatt  2SA1306 RoHS  2SA1306 Distributor
 2SA1306 Application Notes  2SA1306 Component  2SA1306 Circuit  2SA1306 Schematic
 2SA1306 Equivalent  2SA1306 Cross Reference  2SA1306 Data Sheet  2SA1306 Fiche Technique

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