2N1361
Transistor Datasheet. Parameters and Characteristics. Type Designator: 2N1361
Material of transistor: Ge
Polarity: PNP
Maximum collector power dissipation (Pc), W: 0.15
Maximum collector-base voltage |Ucb|, V: 0
Maximum collector-emitter voltage |Uce|, V: 20
Maximum emitter-base voltage |Ueb|, V: 0
Maximum collector current |Ic max|, A: 0.2
Maximum junction temperature (Tj), °C: 75
Transition frequency (ft), MHz: 2
Collector capacitance (Cc), pF: 20
Forward current transfer ratio (hFE), min: 40
Noise Figure, dB: - Package of 2N1361
transistor: TO5
2N1361
Equivalent Transistors - Cross-Reference Search 2N1361
PDF doc:
5.1. 2n135_2n136_2n137.pdf  Size:247K _general_electric  |
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See also transistors datasheet: 2N1356
, 2N1357
, 2N1358
, 2N1358A
, 2N1358M
, 2N1359
, 2N136
, 2N1360
, BU508
, 2N1361A
, 2N1362
, 2N1363
, 2N1364
, 2N1365
, 2N1366
, 2N1367
, 2N137
. Keywords| 2N1361
Datasheet | 2N1361
Datenblatt | 2N1361
RoHS | 2N1361
Distributor | | 2N1361
Application Notes | 2N1361
Component | 2N1361
Circuit | 2N1361
Schematic | | 2N1361
Equivalent | 2N1361
Cross Reference | 2N1361
Data Sheet | 2N1361
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