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2SA1727
  2SA1727
  2SA1727
 
2SA1727
  2SA1727
  2SA1727
 
2SA1727
  2SA1727
 
 
List
100DA025D .. 2N1015E
2N1015F .. 2N1208-1
2N1209 .. 2N1430
2N1431 .. 2N1672A
2N1673 .. 2N201
2N2015 .. 2N2229
2N223 .. 2N250A
2N251 .. 2N2791
2N2792 .. 2N2990
2N2991 .. 2N3253
2N3253S .. 2N3521
2N3522 .. 2N3804DCSM
2N3805 .. 2N4086
2N4087 .. 2N473A
2N474 .. 2N5125
2N5126 .. 2N5384
2N5385 .. 2N574
2N5740 .. 2N6047
2N6048 .. 2N636A
2N637 .. 2N67
2N670 .. 2N840
2N841 .. 2S154
2S155 .. 2SA1107A
2SA1108 .. 2SA1294
2SA1294-O .. 2SA1421
2SA1422 .. 2SA1592S
2SA1592T .. 2SA1866
2SA1869 .. 2SA279
2SA28 .. 2SA509GTM
2SA51 .. 2SA756
2SA757 .. 2SA951
2SA952 .. 2SB1121S
2SB1121T .. 2SB1274Q
2SB1274R .. 2SB1604A
2SB1605 .. 2SB342
2SB343 .. 2SB533
2SB534 .. 2SB725
2SB726 .. 2SB892U
2SB893 .. 2SC1077A
2SC1078 .. 2SC1292
2SC1293 .. 2SC1505
2SC1506 .. 2SC1741A
2SC1741AS .. 2SC1961
2SC1962 .. 2SC2235
2SC2235-O .. 2SC2449
2SC245 .. 2SC2676
2SC2677 .. 2SC2871
2SC2872 .. 2SC3111
2SC3112 .. 2SC3298-O
2SC3298-Y .. 2SC3463L
2SC3463M .. 2SC3661
2SC3662 .. 2SC380TM-Y
2SC381 .. 2SC401S
2SC402 .. 2SC4211
2SC4212 .. 2SC4486
2SC4487 .. 2SC482-G
2SC482-O .. 2SC509-Y
2SC5090 .. 2SC5380A
2SC5382 .. 2SC5845
2SC5846 .. 2SC702
2SC703 .. 2SC914A
2SC915 .. 2SD1081L
2SD1081S .. 2SD1268
2SD1269 .. 2SD1465
2SD1465L .. 2SD1681
2SD1681Q .. 2SD1875
2SD1876 .. 2SD2116
2SD2117 .. 2SD2488
2SD249 .. 2SD383
2SD384 .. 2SD602
2SD602A .. 2SD81
2SD810 .. 2T2905
2T3108 .. 40310
40310V1 .. 40897
40898 .. AC121-7
AC122 .. AD103IV
AD103V .. AF251
AF252 .. AT00510
AT00535 .. BC172A
BC172B .. BC259
BC259A .. BC355C
BC357 .. BC508FB
BC508FC .. BC828
BC828-16 .. BCAP11/6
BCAP13 .. BCW28
BCW29 .. BCX38C
BCX39 .. BCY87
BCY88 .. BD241
BD241A .. BD377-25
BD377-6 .. BD677
BD677A .. BDC08
BDCP20 .. BDW63C
BDW63D .. BDY26C
BDY27 .. BF259A
BF259G .. BF472S
BF479 .. BFE182
BFE193 .. BFQ88
BFQ88A .. BFS97M
BFS97S .. BFW67
BFW68 .. BLU10/12
BLU11/SL .. BLY88T
BLY89 .. BSV33M
BSV35 .. BSY11
BSY17 .. BU323P
BU323Z .. BUL1203EFP
BUL128 .. BUT56
BUT56A .. BUX44
BUX45 .. C45C8
C45H1 .. CDQ10013
CDQ10014 .. CIL521
CIL522 .. CMBTA42
CMBTA44 .. CS29012
CS29013 .. CSB631
CSB631D .. CSC5299F
CSC535 .. CX956
CX956A .. D34C4
D34C5 .. D44H4
D44H5 .. DBW52B
DBW54D .. DTA114EEB
DTA114EKA .. DTC125TKA
DTC125TSA .. DXT690BP5
DXT751 .. ECG339
ECG34 .. ES3120
ES3121 .. FA1A4P
FA1A4Z .. FJT44
FJV1845 .. FMMT458
FMMT459 .. FT3567
FT3568 .. GBC109
GBD179 .. GES4142
GES4143 .. GFT43
GFT43A .. GT2885
GT2886 .. HA7526
HA7527 .. HN1A01FU
HN1A02F .. HUN5212
HUN5213 .. JC556
JC556A .. KF506
KF507 .. KRA726E
KRA726T .. KRC658U
KRC659E .. KSA614
KSA614-O .. KSC2517-Y
KSC2518 .. KSD1691
KSD1691-O .. KSR2005
KSR2006 .. KT3157A
KT315A .. KT6102A
KT6103A .. KT8121B-2
KT8123A .. KT847A
KT847B .. KTA1659
KTA1659A .. KTC801U
KTC802E .. MA201
MA202 .. MG50G1BL2
MG50G2CL3 .. MJ7201
MJ7260 .. MJE4350
MJE4351 .. MM4257
MM4258 .. MMBT5089
MMBT5089L .. MMUN2233L
MMUN2234 .. MP42
MP4248 .. MPS1613R
MPS1711 .. MPSA16
MPSA17 .. MRF5176
MRF5177 .. NA02EG
NA02EH .. NB012EV
NB012EY .. NB211HH
NB211HI .. NESG3032M14
NESG3033M14 .. NPS4141
NPS4142 .. NST489
NST846BF3T5G .. OC66N
OC70 .. PBSS4160T
PBSS4160U .. PEMH13
PEMH14 .. PN5134
PN5135 .. QST7
QSX1 .. RN1409
RN1410 .. RN2503
RN2504 .. S0022
S022011 .. SD600
SD601 .. SGSF424
SGSF425 .. SRA2205U
SRA2205UF .. STC201F
STC2073D .. SX37010
SX37011 .. TA1846
TA1847 .. TI952
TI953 .. TIPL774
TIPL775 .. TN3692
TN3694 .. TP5141
TP5142 .. UMT13009
UMT1N .. UN911AJ
UN911BJ .. ZT284
ZT2857 .. ZTX4400
ZTX4400K .. ZXTP25020DZ
ZXTP25040DFH .. ZXTPS720MC
 
2SA1727 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SA1727 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SA1727

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 400

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), Β°C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 280

Noise Figure, dB: -

Package of 2SA1727 transistor: TO236

2SA1727 Equivalent Transistors - Cross-Reference Search

2SA1727 PDF doc:

1.1. 2sa1812_2sa1727_2sa1776.pdf Size:250K _rohm

2SA1727
2SA1727
2SA1812 / 2SA1727 / 2SA1776 Transistors High-voltage Switching Transistor ( 400V, 0.5A) 2SA1812 / 2SA1727 / 2SA1776 Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA. 3) High switching speed, typically tf : 1 s at IC = 100mA. 4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V 0.5 A (DC) Collector current IC 1.0 A (Pulse) 1 0.5 W 2SA1812 2 W 2 Collector power 1 W PC 2SA1727 dissipation 10 W (Tc 25°C) 2SA1776 1 W 3 Junction temperature Tj 150 °C Storage temperature °C Tstg 55 to +150 1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board. 3 When t = 1.7mm and the foil collector area on the PC board is 1cm2 or greater. Packaging specifications and hFE Type 2SA1812 2SA1727 2SA1776 Package MPT3 CPT3 ATV hFE PQ PQ PQ Mar

4.1. 2sa1721.pdf Size:245K _toshiba

2SA1727
2SA1727
2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = -300 V, VCEO = -300 V • Low saturation voltage: V = -0.5 V (max) CE (sat) • Small collector output capacitance: C = 5.5 pF (typ.) ob • Complementary to 2SC4497 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -300 V Collector-emitter voltage VCEO -300 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Base current IB -20 mA JEDEC TO-236MOD Collector power dissipation PC 150 mW JEITA SC-59 Junction temperature Tj 150 °C TOSHIBA 2-3F1A Storage temperature range Tstg -55~150 °C Weight: 0.012 g (typ.) Marking 1 2003-03-27 2SA1721 Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut

4.2. 2sa1723.pdf Size:80K _sanyo

2SA1727
2SA1727
Ordering number:EN4668 PNP Epitaxial Planar Silicon Transistors 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions · Wideband amplifiers. unit:mm · High-frequency drivers. 2009B [2SA1723] Features · High fT (fT=1.5GHz typ). · High current (IC=300mA). · Adoption of FBET process. 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –30 V Collector-to-Emitter Voltage VCEO –20 V Emitter-to-Base Voltage VEBO –3 V Collector Current IC –300 mA Collector Current (Pulse) ICP –600 mA Collector Dissipation PC 1.2 W Tc=25?C 5 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–20V, IE=0 –0.1 ΅A Emitter Cutoff Current IEBO VEB=–2V, IC=0 –1.0

4.3. 2sa1729.pdf Size:97K _sanyo

2SA1727
2SA1727
Ordering number:EN3133 PNP Epitaxial Planar Silicon Transistor 2SA1729 High-Speed Switching Applications Features Package Dimensions · Adoption of FBET, MBIT processes. unit:mm · Large current capacity. 2038 · Low collector-to-emitter saturation voltage. [2SA1729] · Fast switching speed. · Small-sized package. E : Emitter C : Collector B : Base SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –50 V Collector-to-Emitter Voltage VCEO –40 V Emitter-to-Base Voltage VEBO –5 V Collector Current IC –1.5 A Collector Current (Pulse) ICP –3 A Mounted on ceramic board (250mm2? 0.8mm) Collector Dissipation PC 1.3 W Junction Temperature Tj 150 ?C ?C Storage Temperature Tstg –55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–40V, IE=0 –1 ΅A Emitter Cutoff Current IEBO VE

4.4. 2sa1728.pdf Size:91K _sanyo

2SA1727
2SA1727
Ordering number:EN3132 PNP Epitaxial Planar Silicon Transistor 2SA1728 High-Speed Switching Applications Features Package Dimensions · Adoption of FBET process. unit:mm · Low collector-to-emitter saturation voltage. 2018A · Fast switching speed. [2SA1728] · Small-sized package. C : Collector B : Base E : Emitter SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –50 V Collector-to-Emitter Voltage VCEO –40 V Emitter-to-Base Voltage VEBO –5 V Collector Current IC –500 mA Collector Current (Pulse) ICP –1 A Collector Dissipation PC 200 mW ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–40V, IE=0 –0.5 ΅A Emitter Cutoff Current IEBO VEB=–3V, IC=0 –0.5 ΅A DC Current Gain hFE1 VCE=–2V, IC=–50mA 70* 280* hFE2 VCE=–2V, IC=–5

4.5. 2sa1724.pdf Size:81K _sanyo

2SA1727
2SA1727
Ordering number:EN3159A PNP Epitaxial Planar Silicon Transistor 2SA1724 High-Definiton CRT Display Video Output Driver Applications Features Package Dimensions · High fT (fT=1.5GHz typ). unit:mm · High current (IC=300mA). 2038A · Adoption of FBET process. [2SA1724] 1 : Base 2 : Collector 3 : Emitter Marking : AJ (Bottom view) Specifications SANYO : PCP Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –30 V Collector-to-Emitter Voltage VCEO –20 V Emitter-to-Base Voltage VEBO –3 V Collector Current IC –300 mA Collector Current (Pulse) ICP –600 mA Collector Dissipation PC 500 mW Mounted on ceremic board (250mm2? 0.8mm) 1.3 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–20V, IE=0 –0.1 ΅A Emitter Cutoff Current IEBO VEB=–2V, IC=0 –1.0 ΅A D

4.6. 2sa1720.pdf Size:113K _nec

2SA1727
2SA1727
DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1720 is a high-speed Darlington power transistor. ORDERING INFORMATION This transistor is ideal for high-precision control such as PWM Part No. Package control for pulse motors or brushless motors in OA and FA equipment. 2SA1720 Isolated TO-220 FEATURES • Mold package that does not require an insulating board or insulation bushing • On-chip C-to-E reverse diode • Fast switching speed ABSOLUTE MAXIMUM RATINGS (TA = 25° °C) ° ° Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO -100 V Collector to emitter voltage VCEO -100 V Emitter to base voltage VEBO -8.0 V Collector current (DC) IC(DC) -10, +3.0 A –20 A Collector current (pulse) IC(pulse) PW ? 10 ms, + duty cycle ? 50% Base current (DC) IB(DC) -1.0 A Total power dissipation PT TC = 25°C 25 W TA = 25°C 2.0 W Junction temperature Tj 150 °C Storage te

4.7. 2sa1726.pdf Size:23K _sanken-ele

2SA1727
2SA1727
2SA1726 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512) Application : Audio and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol 2SA1726 Symbol Conditions 2SA1726 Unit Unit ±0.2 4.8 ±0.2 10.2 ±0.1 2.0 VCBO –80 ICBO VCB=–80V –10max ΅ A V VCEO –80 IEBO VEB=–6V –10max ΅ A V VEBO –6 V(BR)CEO IC=–25mA –80min V V ±0.2 o3.75 a IC –6 hFE VCE=–4V, IC=–2A 50min? A b VCE(sat) IC=–2A, IB=–0.2A –0.5max V IB –3 A fT VCE=–12V, IE=0.5A 20typ MHz PC 50(Tc=25°C) W 1.35 Tj COB VCB=–10V, f=1MHz 150typ pF 150 °C Tstg –55 to +150 0.65+0.2 -0.1 °C to to to ? hFE Rank O(50 100), P(70 140), Y(90 180) 2.5 2.5 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 2.6g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (΅ s) (΅ s) (΅ s) a. Type No. b. Lot No. –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ IC–VCE Characteristic

4.8. 2sa1725.pdf Size:27K _sanken-ele

2SA1727
2SA1727
2SA1725 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511) Application : Audio and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol Ratings Unit Symbol Conditions Ratings Unit ±0.2 4.2 ±0.2 10.1 c0.5 VCBO –80 V VCB=–80V –10max ΅ A 2.8 ICBO VCEO –80 V IEBO VEB=–6V –10max ΅ A VEBO V(BR)CEO IC=–25mA –80min V –6 V ±0.2 o3.3 IC hFE VCE=–4V, IC=–2A 50min? a –6 A b IB VCE(sat) IC=–2A, IB=–0.2A –0.5max V –3 A PC fT VCE=–12V, IE=0.5A 20typ MHz 30(Tc=25°C) W Tj COB VCB=–10V, f=1MHz 150typ pF 150 °C ±0.15 1.35 ±0.15 Tstg –55 to +150 °C ? hFE Rank O(50 100), P(70 140), Y(90 180) 1.35 to to to 0.85+0.2 -0.1 0.45+0.2 2.4 -0.1 ±0.2 2.54 2.54 Typical Switching Characteristics (Common Emitter) ±0.2 2.2 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) (?) (A) (V) (V) (A) (A) (΅ s) (΅ s) (΅ s) a. Part No. B C E –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.

4.9. 2sa1726.pdf Size:140K _inchange_semiconductor

2SA1727
2SA1727
INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1726 DESCRIPTION Β·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -2A Β·High Switching Speed Β·Complement to Type 2SC4512 APPLICATIONS Β·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IBB Base Collector Current-Continuous -3 A Total Power Dissipation PC @ TC=25? 50 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1726 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -80 V Collector-Emitter Saturation Voltage IC= -2A; IBB= -0.

4.10. 2sa1725.pdf Size:188K _inchange_semiconductor

2SA1727
2SA1727
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1725 DESCRIPTION Β·With TO-220F package Β·Complement to type 2SC4511 APPLICATIONS Β·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A IBB Base current -3 A PC Collector dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1725 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IBB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-2A

See also transistors datasheet: 2SA1721 , 2SA1722 , 2SA1724 , 2SA1725 , 2SA1725-O , 2SA1725-P , 2SA1725-Y , 2SA1726 , BEL187 , 2SA1728 , 2SA1729 , 2SA173 , 2SA1730 , 2SA1731 , 2SA1732 , 2SA1733 , 2SA1733K .

Keywords

 2SA1727 Datasheet  2SA1727 Datenblatt  2SA1727 RoHS  2SA1727 Distributor
 2SA1727 Application Notes  2SA1727 Component  2SA1727 Circuit  2SA1727 Schematic
 2SA1727 Equivalent  2SA1727 Cross Reference  2SA1727 Data Sheet  2SA1727 Fiche Technique

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