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2SA1727
  2SA1727
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2SA1727
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2SA1727
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List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC693
2SC693F .. 2SC902
2SC903 .. 2SD107
2SD1070 .. 2SD125AH
2SD126 .. 2SD1451
2SD1452 .. 2SD1668Q
2SD1668R .. 2SD1859
2SD186 .. 2SD2104
2SD2105 .. 2SD246
2SD2460 .. 2SD369
2SD37 .. 2SD596-DV4
2SD596-DV5 .. 2SD794A-R
2SD794A-Y .. 2STL1360
2STL2580 .. 40269
40279 .. 40854
40871 .. A748C
A749 .. ACY27
ACY28 .. AF180
AF181 .. ASY90
ASY90-1 .. BC159B
BC159C .. BC251A
BC251B .. BC343
BC344 .. BC487L
BC488 .. BC817-25L
BC817-25LT1 .. BC860AWT1
BC860B .. BCW15K
BCW15L .. BCW99B
BCW99C .. BCY77-8
BCY77-9 .. BD234
BD234-10 .. BD372B
BD372B-10 .. BD635
BD636 .. BD955
BD955F .. BDW25-4
BDW25-6 .. BDY12D
BDY13 .. BF244
BF248 .. BF437
BF439 .. BF871BA
BF871EA .. BFQ43
BFQ43S .. BFS55A
BFS57 .. BFW16A
BFW17 .. BFY87R
BFY87V .. BLY21
BLY22 .. BST16
BST39 .. BSX62-SM
BSX62B .. BTC1510J3
BTC1510T3 .. BU807F
BU807FI .. BUP22A
BUP22B .. BUV70
BUV70F .. BUX98P
BUX98PI .. CC328-25
CC328-40 .. CFD1264P
CFD1264Q .. CK14
CK14A .. CN8050
CN8050C .. CSA1048O
CSA1048Y .. CSC1398A
CSC1398P .. CSD545
CSD545D .. D150
D1666 .. D40D8
D40D9 .. D45VH2
D45VH3 .. DP0150ADJ
DP0150ALP4 .. DTA143E
DTA143ECA .. DTC144WE
DTC144WEA .. ECG100
ECG101 .. ECG395
ECG396 .. ESM2633
ESM2666 .. FCS9013G
FCS9013H .. FJX4006R
FJX4007R .. FMMT5855
FMMT5856 .. FTR129
FTR158 .. GC505
GC506 .. GES5308A
GES5368 .. GME9001
GME9002 .. GT328A
GT328B .. HA9531A
HA9532 .. HPA251R-2
HPA251R-3 .. IDC3281
IDC3298 .. JE9016F
JE9016G .. KN4A4P
KN4A4Z .. KRA756U
KRA757E .. KRC828E
KRC828F .. KSA954-O
KSA954-Y .. KSC2757-O
KSC2757-R .. KSD5011
KSD5012 .. KST4403
KST5086 .. KT3179A-9
KT3180A-9 .. KT6127D
KT6127E .. KT8143N
KT8143P .. KT880G
KT880V .. KTA711T
KTA711U .. KTD1510
KTD1530 .. MA9003
MA901 .. MJ10005
MJ10005P .. MJD3055T4
MJD31 .. MJE520
MJE520K .. MM558-02
MM559-01 .. MMBT5550
MMBT5550L .. MO870
MP10 .. MP4401
MP4403 .. MPS2713
MPS2714 .. MPSA70
MPSA75 .. MRF644
MRF646 .. NA02HY
NA11E .. NB012HU
NB012HV .. NB211Z
NB211ZG .. NKT0028
NKT102 .. NPS4889
NPS4890 .. NTE101
NTE102 .. OC74
OC74N .. PBSS4350Z
PBSS4420D .. PET3706
PET6001 .. PN5550R
PN5551 .. R8224
R8259 .. RN1441
RN1442 .. RN2610
RN2611 .. S130-191
S1309 .. SDM4014
SDM4015 .. SGSF564
SGSF565 .. SRA2207U
SRA2207UF .. STC403F
STC403L .. SXTA92
SXTA93 .. TA2053A
TA2090A .. TIP117
TIP117F .. TIPP111
TIPP112 .. TN3725
TN3742 .. TP5551R
TP5816 .. UMT3585
UMT3904 .. UN911F
UN911K .. ZT2369A
ZT24 .. ZTX3903
ZTX3904 .. ZXTP23140BFH
ZXTP25012EFH .. ZXTPS720MC
 
2SA1727 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SA1727 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SA1727

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 400

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 280

Noise Figure, dB: -

Package of 2SA1727 transistor: TO236

2SA1727 Equivalent Transistors - Cross-Reference Search

2SA1727 PDF doc:

1.1. 2sa1812_2sa1727_2sa1776.pdf Size:250K _rohm

2SA1727
2SA1727
2SA1812 / 2SA1727 / 2SA1776 Transistors High-voltage Switching Transistor ( 400V, 0.5A) 2SA1812 / 2SA1727 / 2SA1776 Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA. 3) High switching speed, typically tf : 1 s at IC = 100mA. 4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V 0.5 A (DC) Collector current IC 1.0 A (Pulse) 1 0.5 W 2SA1812 2 W 2 Collector power 1 W PC 2SA1727 dissipation 10 W (Tc 25°C) 2SA1776 1 W 3 Junction temperature Tj 150 °C Storage temperature °C Tstg 55 to +150 1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board. 3 When t = 1.7mm and the foil collector area on the PC board is 1cm2 or greater. Packaging specifications and hFE Type 2SA1812 2SA1727 2SA1776 Package MPT3 CPT3 ATV hFE PQ PQ PQ Mar

4.1. 2sa1721.pdf Size:245K _toshiba

2SA1727
2SA1727
2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = -300 V, VCEO = -300 V • Low saturation voltage: V = -0.5 V (max) CE (sat) • Small collector output capacitance: C = 5.5 pF (typ.) ob • Complementary to 2SC4497 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -300 V Collector-emitter voltage VCEO -300 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Base current IB -20 mA JEDEC TO-236MOD Collector power dissipation PC 150 mW JEITA SC-59 Junction temperature Tj 150 °C TOSHIBA 2-3F1A Storage temperature range Tstg -55~150 °C Weight: 0.012 g (typ.) Marking 1 2003-03-27 2SA1721 Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut

4.2. 2sa1723.pdf Size:80K _sanyo

2SA1727
2SA1727
Ordering number:EN4668 PNP Epitaxial Planar Silicon Transistors 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions · Wideband amplifiers. unit:mm · High-frequency drivers. 2009B [2SA1723] Features · High fT (fT=1.5GHz typ). · High current (IC=300mA). · Adoption of FBET process. 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –30 V Collector-to-Emitter Voltage VCEO –20 V Emitter-to-Base Voltage VEBO –3 V Collector Current IC –300 mA Collector Current (Pulse) ICP –600 mA Collector Dissipation PC 1.2 W Tc=25?C 5 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–20V, IE=0 –0.1 µA Emitter Cutoff Current IEBO VEB=–2V, IC=0 –1.0

4.3. 2sa1729.pdf Size:97K _sanyo

2SA1727
2SA1727
Ordering number:EN3133 PNP Epitaxial Planar Silicon Transistor 2SA1729 High-Speed Switching Applications Features Package Dimensions · Adoption of FBET, MBIT processes. unit:mm · Large current capacity. 2038 · Low collector-to-emitter saturation voltage. [2SA1729] · Fast switching speed. · Small-sized package. E : Emitter C : Collector B : Base SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –50 V Collector-to-Emitter Voltage VCEO –40 V Emitter-to-Base Voltage VEBO –5 V Collector Current IC –1.5 A Collector Current (Pulse) ICP –3 A Mounted on ceramic board (250mm2? 0.8mm) Collector Dissipation PC 1.3 W Junction Temperature Tj 150 ?C ?C Storage Temperature Tstg –55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–40V, IE=0 –1 µA Emitter Cutoff Current IEBO VE

4.4. 2sa1728.pdf Size:91K _sanyo

2SA1727
2SA1727
Ordering number:EN3132 PNP Epitaxial Planar Silicon Transistor 2SA1728 High-Speed Switching Applications Features Package Dimensions · Adoption of FBET process. unit:mm · Low collector-to-emitter saturation voltage. 2018A · Fast switching speed. [2SA1728] · Small-sized package. C : Collector B : Base E : Emitter SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –50 V Collector-to-Emitter Voltage VCEO –40 V Emitter-to-Base Voltage VEBO –5 V Collector Current IC –500 mA Collector Current (Pulse) ICP –1 A Collector Dissipation PC 200 mW ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–40V, IE=0 –0.5 µA Emitter Cutoff Current IEBO VEB=–3V, IC=0 –0.5 µA DC Current Gain hFE1 VCE=–2V, IC=–50mA 70* 280* hFE2 VCE=–2V, IC=–5

4.5. 2sa1724.pdf Size:81K _sanyo

2SA1727
2SA1727
Ordering number:EN3159A PNP Epitaxial Planar Silicon Transistor 2SA1724 High-Definiton CRT Display Video Output Driver Applications Features Package Dimensions · High fT (fT=1.5GHz typ). unit:mm · High current (IC=300mA). 2038A · Adoption of FBET process. [2SA1724] 1 : Base 2 : Collector 3 : Emitter Marking : AJ (Bottom view) Specifications SANYO : PCP Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –30 V Collector-to-Emitter Voltage VCEO –20 V Emitter-to-Base Voltage VEBO –3 V Collector Current IC –300 mA Collector Current (Pulse) ICP –600 mA Collector Dissipation PC 500 mW Mounted on ceremic board (250mm2? 0.8mm) 1.3 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–20V, IE=0 –0.1 µA Emitter Cutoff Current IEBO VEB=–2V, IC=0 –1.0 µA D

4.6. 2sa1720.pdf Size:113K _nec

2SA1727
2SA1727
DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1720 is a high-speed Darlington power transistor. ORDERING INFORMATION This transistor is ideal for high-precision control such as PWM Part No. Package control for pulse motors or brushless motors in OA and FA equipment. 2SA1720 Isolated TO-220 FEATURES • Mold package that does not require an insulating board or insulation bushing • On-chip C-to-E reverse diode • Fast switching speed ABSOLUTE MAXIMUM RATINGS (TA = 25° °C) ° ° Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO -100 V Collector to emitter voltage VCEO -100 V Emitter to base voltage VEBO -8.0 V Collector current (DC) IC(DC) -10, +3.0 A –20 A Collector current (pulse) IC(pulse) PW ? 10 ms, + duty cycle ? 50% Base current (DC) IB(DC) -1.0 A Total power dissipation PT TC = 25°C 25 W TA = 25°C 2.0 W Junction temperature Tj 150 °C Storage te

4.7. 2sa1726.pdf Size:192K _jmnic

2SA1727
2SA1727
JMnic Product Specification Silicon PNP Power Transistors 2SA1726 DESCRIPTION · ·With TO-220C package ·Complement to type 2SC4512 APPLICATIONS ·Audio and General Purpose PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A IB Base current -3 A PC Collector dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SA1726 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE=? -80 V VCE(sat) Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.5 V ICBO Collector cut-off current

4.8. 2sa1725.pdf Size:188K _jmnic

2SA1727
2SA1727
JMnic Product Specification Silicon PNP Power Transistors 2SA1725 DESCRIPTION ·With TO-220F package ·Complement to type 2SC4511 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A IB Base current -3 A PC Collector dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SA1725 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -0.5 V ICBO Collector cut

4.9. 2sa1726.pdf Size:23K _sanken-ele

2SA1727
2SA1727
2SA1726 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512) Application : Audio and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol 2SA1726 Symbol Conditions 2SA1726 Unit Unit ±0.2 4.8 ±0.2 10.2 ±0.1 2.0 VCBO –80 ICBO VCB=–80V –10max µ A V VCEO –80 IEBO VEB=–6V –10max µ A V VEBO –6 V(BR)CEO IC=–25mA –80min V V ±0.2 o3.75 a IC –6 hFE VCE=–4V, IC=–2A 50min? A b VCE(sat) IC=–2A, IB=–0.2A –0.5max V IB –3 A fT VCE=–12V, IE=0.5A 20typ MHz PC 50(Tc=25°C) W 1.35 Tj COB VCB=–10V, f=1MHz 150typ pF 150 °C Tstg –55 to +150 0.65+0.2 -0.1 °C to to to ? hFE Rank O(50 100), P(70 140), Y(90 180) 2.5 2.5 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 2.6g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. b. Lot No. –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ IC–VCE Characteristic

4.10. 2sa1725.pdf Size:27K _sanken-ele

2SA1727
2SA1727
2SA1725 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511) Application : Audio and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol Ratings Unit Symbol Conditions Ratings Unit ±0.2 4.2 ±0.2 10.1 c0.5 VCBO –80 V VCB=–80V –10max µ A 2.8 ICBO VCEO –80 V IEBO VEB=–6V –10max µ A VEBO V(BR)CEO IC=–25mA –80min V –6 V ±0.2 o3.3 IC hFE VCE=–4V, IC=–2A 50min? a –6 A b IB VCE(sat) IC=–2A, IB=–0.2A –0.5max V –3 A PC fT VCE=–12V, IE=0.5A 20typ MHz 30(Tc=25°C) W Tj COB VCB=–10V, f=1MHz 150typ pF 150 °C ±0.15 1.35 ±0.15 Tstg –55 to +150 °C ? hFE Rank O(50 100), P(70 140), Y(90 180) 1.35 to to to 0.85+0.2 -0.1 0.45+0.2 2.4 -0.1 ±0.2 2.54 2.54 Typical Switching Characteristics (Common Emitter) ±0.2 2.2 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Part No. B C E –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.

4.11. 2sa1726.pdf Size:140K _inchange_semiconductor

2SA1727
2SA1727
INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1726 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -2A ·High Switching Speed ·Complement to Type 2SC4512 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IBB Base Collector Current-Continuous -3 A Total Power Dissipation PC @ TC=25? 50 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1726 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -80 V Collector-Emitter Saturation Voltage IC= -2A; IBB= -0.

4.12. 2sa1725.pdf Size:188K _inchange_semiconductor

2SA1727
2SA1727
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1725 DESCRIPTION ·With TO-220F package ·Complement to type 2SC4511 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A IBB Base current -3 A PC Collector dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1725 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IBB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-2A

See also transistors datasheet: 2SA1721 , 2SA1722 , 2SA1724 , 2SA1725 , 2SA1725-O , 2SA1725-P , 2SA1725-Y , 2SA1726 , BEL187 , 2SA1728 , 2SA1729 , 2SA173 , 2SA1730 , 2SA1731 , 2SA1732 , 2SA1733 , 2SA1733K .

Keywords

 2SA1727 Datasheet  2SA1727 Datenblatt  2SA1727 RoHS  2SA1727 Distributor
 2SA1727 Application Notes  2SA1727 Component  2SA1727 Circuit  2SA1727 Schematic
 2SA1727 Equivalent  2SA1727 Cross Reference  2SA1727 Data Sheet  2SA1727 Fiche Technique

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