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2SA1727
  2SA1727
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2SA1727
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  2SA1727
 
2SA1727
  2SA1727
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586-G
2SA1586-O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505-O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229-O .. 2SC2434
2SC2435 .. 2SC2668-Y
2SC2669 .. 2SC2859-O
2SC2859-Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC4006
2SC4007 .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC5078
2SC5079 .. 2SC537
2SC5370 .. 2SC5820
2SC5824 .. 2SC692
2SC692M .. 2SC901
2SC901A .. 2SD1068
2SD1069 .. 2SD1259A
2SD125A .. 2SD1449
2SD1450 .. 2SD1667S
2SD1668 .. 2SD1857
2SD1858 .. 2SD2102
2SD2103 .. 2SD2457
2SD2459 .. 2SD367
2SD368 .. 2SD596-DV2
2SD596-DV3 .. 2SD794A
2SD794A-O .. 2STF2360
2STF2550 .. 40264
40268 .. 40852
40853 .. A748
A748B .. ACY24
ACY25 .. AF178
AF179 .. ASY88
ASY89 .. BC159
BC159A .. BC250C
BC251 .. BC341-6
BC342 .. BC487A
BC487B .. BC817-16W
BC817-25 .. BC860AR
BC860AW .. BCW14M
BCW15 .. BCW99
BCW99A .. BCY77-10
BCY77-7 .. BD233-6
BD233G .. BD372A-10
BD372A-25 .. BD633
BD634 .. BD954
BD954F .. BDW25
BDW25-10 .. BDY12B
BDY12C .. BF242A
BF243 .. BF435
BF436 .. BF871
BF871A .. BFQ41
BFQ42 .. BFS540
BFS55 .. BFV99
BFW16 .. BFY87A
BFY87G .. BLY17C
BLY20 .. BSS99
BST15 .. BSX62-16
BSX62-6 .. BTC1510FP
BTC1510I3 .. BU212
BU213 .. BUF410
BUF410A .. BUS22A
BUS22B .. BUW77
BUW81 .. BUY81
BUY82 .. CD9013DEF
CD9013GHI .. CIL149B
CIL149C .. CL155P
CL166 .. CPS2512B
CPS2515B .. CSA966O
CSA966Y .. CSC2655Y
CSC2688 .. CTP1036
CTP1104 .. D29J4
D29J5 .. D42CU3
D42CU4 .. D64VE5
D64VP3 .. DT34-600
DT36-300 .. DTC014YUB
DTC015EEB .. DTL3428
DTL3429 .. ECG233
ECG2330 .. ED1602A
ED1602B .. ET190
ET191 .. FE4019
FE4020 .. FMC7A
FMG11A .. FPC1384
FPC1675 .. FXT553SM
FXT555 .. GE5061
GE5062 .. GET2906
GET2907 .. GSDR15025
GSDR15025I .. GT41
GT42 .. HEPS3033
HEPS3034 .. HSE1300
HSE1301 .. IMX1
IMX17 .. K2106A
K2106B .. KRA159F
KRA160F .. KRC116M
KRC116S .. KRC867E
KRC867U .. KSB772-G
KSB772-O .. KSC5020
KSC5020-O .. KSE13003
KSE13003T .. KT209Zh
KT210A .. KT345V
KT347A .. KT644A
KT644B .. KT817G
KT817G2 .. KT914A
KT916A .. KTC3072D
KTC3072L .. KTX302U
KTX303U .. MD1130F
MD1131 .. MJ14000
MJ14001 .. MJE13003D
MJE13003D-P .. MJF18004
MJF18006 .. MMBT100
MMBT100A .. MMBTA55LT1
MMBTA56 .. MP1549A
MP1550 .. MP603A
MP6076 .. MPS3826
MPS3827 .. MPSW51
MPSW51A .. MT200
MT3001 .. NA21ZI
NA21ZJ .. NB021FV
NB021FY .. NB213YJ
NB213YX .. NKT242
NKT242H .. NR421HT
NR431DE .. NTE254
NTE2541 .. P216V
P217 .. PDTA114YE
PDTA114YM .. PMD1700K
PMD1701K .. PTB20017
PTB20020 .. RCA8766B
RCA8766C .. RN1908
RN1908AFS .. RN2962
RN2962CT .. S627T
S628T .. SE8042
SE8510 .. SM3159
SM3160 .. SRC1206SF
SRC1206U .. STD790A
STD815CP40 .. T1342
T1343 .. TBC859
TBC860 .. TIP32D
TIP32E .. TIX618
TIX619 .. TN5141
TN5142 .. TR1034A
TR136 .. UN1222
UN1223 .. UPT114
UPT115 .. ZTX107C
ZTX107CK .. ZTX542L
ZTX542M .. ZXTPS720MC
 
2SA1727 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SA1727 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SA1727

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 400

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 280

Noise Figure, dB: -

Package of 2SA1727 transistor: TO236

2SA1727 Equivalent Transistors - Cross-Reference Search

2SA1727 PDF doc:

1.1. 2sa1812_2sa1727_2sa1776.pdf Size:250K _rohm

2SA1727
2SA1727
2SA1812 / 2SA1727 / 2SA1776 Transistors High-voltage Switching Transistor ( 400V, 0.5A) 2SA1812 / 2SA1727 / 2SA1776 Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA. 3) High switching speed, typically tf : 1 s at IC = 100mA. 4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V 0.5 A (DC) Collector current IC 1.0 A (Pulse) 1 0.5 W 2SA1812 2 W 2 Collector power 1 W PC 2SA1727 dissipation 10 W (Tc 25°C) 2SA1776 1 W 3 Junction temperature Tj 150 °C Storage temperature °C Tstg 55 to +150 1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board. 3 When t = 1.7mm and the foil collector area on the PC board is 1cm2 or greater. Packaging specifications and hFE Type 2SA1812 2SA1727 2SA1776 Package MPT3 CPT3 ATV hFE PQ PQ PQ Mar

4.1. 2sa1721.pdf Size:245K _toshiba

2SA1727
2SA1727
2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = -300 V, VCEO = -300 V • Low saturation voltage: V = -0.5 V (max) CE (sat) • Small collector output capacitance: C = 5.5 pF (typ.) ob • Complementary to 2SC4497 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -300 V Collector-emitter voltage VCEO -300 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Base current IB -20 mA JEDEC TO-236MOD Collector power dissipation PC 150 mW JEITA SC-59 Junction temperature Tj 150 °C TOSHIBA 2-3F1A Storage temperature range Tstg -55~150 °C Weight: 0.012 g (typ.) Marking 1 2003-03-27 2SA1721 Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut

4.2. 2sa1729.pdf Size:97K _sanyo

2SA1727
2SA1727
Ordering number:EN3133 PNP Epitaxial Planar Silicon Transistor 2SA1729 High-Speed Switching Applications Features Package Dimensions · Adoption of FBET, MBIT processes. unit:mm · Large current capacity. 2038 · Low collector-to-emitter saturation voltage. [2SA1729] · Fast switching speed. · Small-sized package. E : Emitter C : Collector B : Base SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –50 V Collector-to-Emitter Voltage VCEO –40 V Emitter-to-Base Voltage VEBO –5 V Collector Current IC –1.5 A Collector Current (Pulse) ICP –3 A Mounted on ceramic board (250mm2? 0.8mm) Collector Dissipation PC 1.3 W Junction Temperature Tj 150 ?C ?C Storage Temperature Tstg –55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–40V, IE=0 –1 µA Emitter Cutoff Current IEBO VE

4.3. 2sa1724.pdf Size:81K _sanyo

2SA1727
2SA1727
Ordering number:EN3159A PNP Epitaxial Planar Silicon Transistor 2SA1724 High-Definiton CRT Display Video Output Driver Applications Features Package Dimensions · High fT (fT=1.5GHz typ). unit:mm · High current (IC=300mA). 2038A · Adoption of FBET process. [2SA1724] 1 : Base 2 : Collector 3 : Emitter Marking : AJ (Bottom view) Specifications SANYO : PCP Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –30 V Collector-to-Emitter Voltage VCEO –20 V Emitter-to-Base Voltage VEBO –3 V Collector Current IC –300 mA Collector Current (Pulse) ICP –600 mA Collector Dissipation PC 500 mW Mounted on ceremic board (250mm2? 0.8mm) 1.3 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–20V, IE=0 –0.1 µA Emitter Cutoff Current IEBO VEB=–2V, IC=0 –1.0 µA D

4.4. 2sa1723.pdf Size:80K _sanyo

2SA1727
2SA1727
Ordering number:EN4668 PNP Epitaxial Planar Silicon Transistors 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions · Wideband amplifiers. unit:mm · High-frequency drivers. 2009B [2SA1723] Features · High fT (fT=1.5GHz typ). · High current (IC=300mA). · Adoption of FBET process. 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –30 V Collector-to-Emitter Voltage VCEO –20 V Emitter-to-Base Voltage VEBO –3 V Collector Current IC –300 mA Collector Current (Pulse) ICP –600 mA Collector Dissipation PC 1.2 W Tc=25?C 5 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–20V, IE=0 –0.1 µA Emitter Cutoff Current IEBO VEB=–2V, IC=0 –1.0

4.5. 2sa1728.pdf Size:91K _sanyo

2SA1727
2SA1727
Ordering number:EN3132 PNP Epitaxial Planar Silicon Transistor 2SA1728 High-Speed Switching Applications Features Package Dimensions · Adoption of FBET process. unit:mm · Low collector-to-emitter saturation voltage. 2018A · Fast switching speed. [2SA1728] · Small-sized package. C : Collector B : Base E : Emitter SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –50 V Collector-to-Emitter Voltage VCEO –40 V Emitter-to-Base Voltage VEBO –5 V Collector Current IC –500 mA Collector Current (Pulse) ICP –1 A Collector Dissipation PC 200 mW ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–40V, IE=0 –0.5 µA Emitter Cutoff Current IEBO VEB=–3V, IC=0 –0.5 µA DC Current Gain hFE1 VCE=–2V, IC=–50mA 70* 280* hFE2 VCE=–2V, IC=–5

4.6. 2sa1720.pdf Size:113K _nec

2SA1727
2SA1727
DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1720 is a high-speed Darlington power transistor. ORDERING INFORMATION This transistor is ideal for high-precision control such as PWM Part No. Package control for pulse motors or brushless motors in OA and FA equipment. 2SA1720 Isolated TO-220 FEATURES • Mold package that does not require an insulating board or insulation bushing • On-chip C-to-E reverse diode • Fast switching speed ABSOLUTE MAXIMUM RATINGS (TA = 25° °C) ° ° Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO -100 V Collector to emitter voltage VCEO -100 V Emitter to base voltage VEBO -8.0 V Collector current (DC) IC(DC) -10, +3.0 A –20 A Collector current (pulse) IC(pulse) PW ? 10 ms, + duty cycle ? 50% Base current (DC) IB(DC) -1.0 A Total power dissipation PT TC = 25°C 25 W TA = 25°C 2.0 W Junction temperature Tj 150 °C Storage te

4.7. 2sa1725.pdf Size:188K _jmnic

2SA1727
2SA1727
JMnic Product Specification Silicon PNP Power Transistors 2SA1725 DESCRIPTION ·With TO-220F package ·Complement to type 2SC4511 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A IB Base current -3 A PC Collector dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SA1725 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -0.5 V ICBO Collector cut

4.8. 2sa1726.pdf Size:192K _jmnic

2SA1727
2SA1727
JMnic Product Specification Silicon PNP Power Transistors 2SA1726 DESCRIPTION · ·With TO-220C package ·Complement to type 2SC4512 APPLICATIONS ·Audio and General Purpose PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A IB Base current -3 A PC Collector dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SA1726 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE=? -80 V VCE(sat) Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.5 V ICBO Collector cut-off current

4.9. 2sa1725.pdf Size:27K _sanken-ele

2SA1727
2SA1727
2SA1725 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511) Application : Audio and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol Ratings Unit Symbol Conditions Ratings Unit ±0.2 4.2 ±0.2 10.1 c0.5 VCBO –80 V VCB=–80V –10max µ A 2.8 ICBO VCEO –80 V IEBO VEB=–6V –10max µ A VEBO V(BR)CEO IC=–25mA –80min V –6 V ±0.2 o3.3 IC hFE VCE=–4V, IC=–2A 50min? a –6 A b IB VCE(sat) IC=–2A, IB=–0.2A –0.5max V –3 A PC fT VCE=–12V, IE=0.5A 20typ MHz 30(Tc=25°C) W Tj COB VCB=–10V, f=1MHz 150typ pF 150 °C ±0.15 1.35 ±0.15 Tstg –55 to +150 °C ? hFE Rank O(50 100), P(70 140), Y(90 180) 1.35 to to to 0.85+0.2 -0.1 0.45+0.2 2.4 -0.1 ±0.2 2.54 2.54 Typical Switching Characteristics (Common Emitter) ±0.2 2.2 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Part No. B C E –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.

4.10. 2sa1726.pdf Size:23K _sanken-ele

2SA1727
2SA1727
2SA1726 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512) Application : Audio and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol 2SA1726 Symbol Conditions 2SA1726 Unit Unit ±0.2 4.8 ±0.2 10.2 ±0.1 2.0 VCBO –80 ICBO VCB=–80V –10max µ A V VCEO –80 IEBO VEB=–6V –10max µ A V VEBO –6 V(BR)CEO IC=–25mA –80min V V ±0.2 o3.75 a IC –6 hFE VCE=–4V, IC=–2A 50min? A b VCE(sat) IC=–2A, IB=–0.2A –0.5max V IB –3 A fT VCE=–12V, IE=0.5A 20typ MHz PC 50(Tc=25°C) W 1.35 Tj COB VCB=–10V, f=1MHz 150typ pF 150 °C Tstg –55 to +150 0.65+0.2 -0.1 °C to to to ? hFE Rank O(50 100), P(70 140), Y(90 180) 2.5 2.5 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 2.6g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. b. Lot No. –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ IC–VCE Characteristic

4.11. 2sa1725.pdf Size:188K _inchange_semiconductor

2SA1727
2SA1727
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1725 DESCRIPTION ·With TO-220F package ·Complement to type 2SC4511 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A IBB Base current -3 A PC Collector dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1725 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IBB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-2A

4.12. 2sa1726.pdf Size:140K _inchange_semiconductor

2SA1727
2SA1727
INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1726 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -2A ·High Switching Speed ·Complement to Type 2SC4512 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IBB Base Collector Current-Continuous -3 A Total Power Dissipation PC @ TC=25? 50 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1726 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -80 V Collector-Emitter Saturation Voltage IC= -2A; IBB= -0.

See also transistors datasheet: 2SA1721 , 2SA1722 , 2SA1724 , 2SA1725 , 2SA1725-O , 2SA1725-P , 2SA1725-Y , 2SA1726 , BEL187 , 2SA1728 , 2SA1729 , 2SA173 , 2SA1730 , 2SA1731 , 2SA1732 , 2SA1733 , 2SA1733K .

Keywords

 2SA1727 Datasheet  2SA1727 Datenblatt  2SA1727 RoHS  2SA1727 Distributor
 2SA1727 Application Notes  2SA1727 Component  2SA1727 Circuit  2SA1727 Schematic
 2SA1727 Equivalent  2SA1727 Cross Reference  2SA1727 Data Sheet  2SA1727 Fiche Technique

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