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2SA1727 Transistor. Datasheet pdf. Equivalent

Type Designator: 2SA1727

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 400 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 280

Noise Figure, dB: -

Package: TO236

2SA1727 Transistor Equivalent Substitute - Cross-Reference Search

2SA1727 Datasheet PDF:

1.1. 2sa1812_2sa1727_2sa1776.pdf Size:250K _rohm

2SA1727
2SA1727

2SA1812 / 2SA1727 / 2SA1776 Transistors High-voltage Switching Transistor ( 400V, 0.5A) 2SA1812 / 2SA1727 / 2SA1776 Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA. 3) High switching speed, typically tf : 1 s at IC = 100mA. 4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25C) Parameter Sy

4.1. 2sa1721.pdf Size:245K _toshiba

2SA1727
2SA1727

2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = -300 V, VCEO = -300 V Low saturation voltage: V = -0.5 V (max) CE (sat) Small collector output capacitance: C = 5.5 pF (typ.) ob Comp

4.2. 2sa1724.pdf Size:81K _sanyo

2SA1727
2SA1727

Ordering number:EN3159A PNP Epitaxial Planar Silicon Transistor 2SA1724 High-Definiton CRT Display Video Output Driver Applications Features Package Dimensions High fT (fT=1.5GHz typ). unit:mm High current (IC=300mA). 2038A Adoption of FBET process. [2SA1724] 1 : Base 2 : Collector 3 : Emitter Marking : AJ (Bottom view) Specifications SANYO : PCP Absolute Maximum Rating

4.3. 2sa1723.pdf Size:80K _sanyo

2SA1727
2SA1727

Ordering number:EN4668 PNP Epitaxial Planar Silicon Transistors 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions Wideband amplifiers. unit:mm High-frequency drivers. 2009B [2SA1723] Features High fT (fT=1.5GHz typ). High current (IC=300mA). Adoption of FBET process. 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-1

4.4. 2sa1728.pdf Size:91K _sanyo

2SA1727
2SA1727

Ordering number:EN3132 PNP Epitaxial Planar Silicon Transistor 2SA1728 High-Speed Switching Applications Features Package Dimensions Adoption of FBET process. unit:mm Low collector-to-emitter saturation voltage. 2018A Fast switching speed. [2SA1728] Small-sized package. C : Collector B : Base E : Emitter SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C

4.5. 2sa1729.pdf Size:97K _sanyo

2SA1727
2SA1727

Ordering number:EN3133 PNP Epitaxial Planar Silicon Transistor 2SA1729 High-Speed Switching Applications Features Package Dimensions Adoption of FBET, MBIT processes. unit:mm Large current capacity. 2038 Low collector-to-emitter saturation voltage. [2SA1729] Fast switching speed. Small-sized package. E : Emitter C : Collector B : Base SANYO : PCP (Bottom view) Spec

4.6. 2sa1720.pdf Size:113K _nec

2SA1727
2SA1727

DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1720 is a high-speed Darlington power transistor. ORDERING INFORMATION This transistor is ideal for high-precision control such as PWM Part No. Package control for pulse motors or brushless motors in OA and FA equipment. 2SA1720 Isolated TO-220 FEATURES

4.7. 2sa1726.pdf Size:192K _jmnic

2SA1727
2SA1727

JMnic Product Specification Silicon PNP Power Transistors 2SA1726 DESCRIPTION · ·With TO-220C package ·Complement to type 2SC4512 APPLICATIONS ·Audio and General Purpose PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V

4.8. 2sa1725.pdf Size:188K _jmnic

2SA1727
2SA1727

JMnic Product Specification Silicon PNP Power Transistors 2SA1725 DESCRIPTION ·With TO-220F package ·Complement to type 2SC4511 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Ope

4.9. 2sa1726.pdf Size:23K _sanken-ele

2SA1727

2SA1726 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512) Application : Audio and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol 2SA1726 Symbol Conditions 2SA1726 Unit Unit 0.2 4.8 0.2 10.2 0.1 2.0 VCBO 80 ICBO VCB=80V 10max A V VCEO 80 IEBO VEB=6V 10max A V VEBO 6 V(

4.10. 2sa1725.pdf Size:27K _sanken-ele

2SA1727

2SA1725 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511) Application : Audio and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.2 0.2 10.1 c0.5 VCBO 80 V VCB=80V 10max A 2.8 ICBO VCEO 80 V IEBO VEB=6V 10max A VEBO V(BR)C

4.11. 2sa1726.pdf Size:140K _inchange_semiconductor

2SA1727
2SA1727

INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1726 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -2A ·High Switching Speed ·Complement to Type 2SC4512 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V

4.12. 2sa1725.pdf Size:188K _inchange_semiconductor

2SA1727
2SA1727

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1725 DESCRIPTION ·With TO-220F package ·Complement to type 2SC4511 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector

4.13. 2sa1724.pdf Size:869K _kexin

2SA1727
2SA1727

SMD Type Transistors PNP Transistors 2SA1724 SOT-89 Unit:mm 1.70 0.1 ■ Features ● Collector Current Capability IC=-0.3A ● Collector Emitter Voltage VCEO=-20V 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -20 V Emitter - Base Voltag

4.14. 2sa1721.pdf Size:991K _kexin

2SA1727
2SA1727

SMD Type Transistors PNP Transistors 2SA1721 SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=-100mA 1 2 ● Collector Emitter Voltage VCEO=-300V +0.1 +0.05 0.95 -0.1 0.1 -0.01 ● Complementary to 2SC4497 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collect

4.15. 2sa1728.pdf Size:1192K _kexin

2SA1727
2SA1727

SMD Type Transistors PNP Transistors 2SA1728 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=-500mA 1 2 ● Collector Emitter Voltage VCEO=-40V +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Coll

4.16. 2sa1729.pdf Size:838K _kexin

2SA1727
2SA1727

SMD Type Transistors PNP Transistors 2SA1729 1.70 0.1 ■ Features ● Large current capacity. ● Low collector-to-emitter saturation voltage. 0.42 0.1 0.46 0.1 ● Fast switching speed. ● Small-sized package. 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage V

Datasheet: 2SA1721 , 2SA1722 , 2SA1724 , 2SA1725 , 2SA1725O , 2SA1725P , 2SA1725Y , 2SA1726 , BEL187 , 2SA1728 , 2SA1729 , 2SA173 , 2SA1730 , 2SA1731 , 2SA1732 , 2SA1733 , 2SA1733K .

 


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