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2SA1727
  2SA1727
  2SA1727
  2SA1727
 
2SA1727
  2SA1727
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  2SA1727
 
 
List
100DA025D .. 2N1011
2N1012 .. 2N1201
2N1202 .. 2N1423
2N1424 .. 2N1664
2N1665 .. 2N2000
2N2001 .. 2N2222DCSM
2N2223 .. 2N2492
2N2493 .. 2N2785
2N2786 .. 2N2982
2N2983 .. 2N3250DCSM
2N3250X .. 2N3514
2N3515 .. 2N3800DCSM
2N3801 .. 2N4073
2N4074 .. 2N466
2N467 .. 2N5117
2N5118 .. 2N5374
2N5375 .. 2N573
2N5730 .. 2N6038
2N6039 .. 2N6360
2N6361 .. 2N6677
2N6678 .. 2N834-46
2N834-51 .. 2S140
2S141 .. 2SA1096
2SA1096A .. 2SA1291
2SA1291Q .. 2SA1417T
2SA1418 .. 2SA1586G
2SA1586O .. 2SA1855
2SA1856 .. 2SA268
2SA269 .. 2SA505
2SA505O .. 2SA747
2SA747A .. 2SA939
2SA94 .. 2SB1118U
2SB1119 .. 2SB1271
2SB1271Q .. 2SB1589
2SB159 .. 2SB335
2SB336 .. 2SB522-1
2SB522-2 .. 2SB713
2SB714 .. 2SB883
2SB884 .. 2SC1070
2SC1070B .. 2SC1279S
2SC128 .. 2SC1494
2SC1495 .. 2SC1731
2SC1732 .. 2SC1950
2SC1951 .. 2SC2229
2SC2229O .. 2SC2434
2SC2435 .. 2SC2668Y
2SC2669 .. 2SC2859O
2SC2859Y .. 2SC3096
2SC3098 .. 2SC3287
2SC3288 .. 2SC346
2SC3460 .. 2SC3649R
2SC3649S .. 2SC3800
2SC3801 .. 2SC400M
2SC400O .. 2SC4199
2SC4199A .. 2SC4471
2SC4473 .. 2SC48
2SC480 .. 2SC507R
2SC507Y .. 2SC536SP
2SC537 .. 2SC5813
2SC5819 .. 2SC690
2SC690M .. 2SC89H
2SC90 .. 2SD1063S
2SD1064 .. 2SD1252
2SD1252A .. 2SD1442
2SD1442A .. 2SD1662
2SD1663 .. 2SD1848
2SD1849 .. 2SD2095
2SD2096 .. 2SD2439O
2SD2439P .. 2SD362R
2SD363 .. 2SD588A
2SD589 .. 2SD786
2SD787 .. 2STA2510
2STC2510 .. 40221
40222 .. 40630
40631 .. A177
A178 .. AC556K
AC558 .. AF129
AF130 .. ASY70
ASY70IV .. BC149B
BC149C .. BC237B-92
BC237BP .. BC337-25
BC337-40 .. BC477QF
BC477VI .. BC807-25
BC807-25L .. BC858CLT1
BC858CR .. BCV63
BCV63B .. BCW94K
BCW94KA .. BCY65EPA
BCY65EPB .. BD226-16
BD226-6 .. BD370B-16
BD370B-25 .. BD590
BD591 .. BD940F
BD941 .. BDV93
BDV94 .. BDX85A
BDX85B .. BF225JF
BF226 .. BF422
BF422A .. BF847
BF848 .. BFQ268
BFQ27 .. BFS33P
BFS34 .. BFV88
BFV88A .. BFY69V
BFY69W .. BLX88
BLX89 .. BSS72
BSS72S .. BSX46-6
BSX47 .. BTB1580L3
BTB1580M3 .. BU1508AX
BU1508DX .. BUD48A
BUD48AI .. BUS12B
BUS13 .. BUW46
BUW48 .. BUY64
BUY65 .. CD5918
CD5919 .. CI3397
CI3402 .. CL066P
CL100 .. CPH5517
CPH5518 .. CSA733
CSA733K .. CSC2274D
CSC2274E .. CT764
CT765 .. D29A4
D29A5 .. D41E2
D41E3 .. D62T6560
D62T7030 .. DT1311
DT1312 .. DTB143EC
DTB143EK .. DTL1654
DTL1655 .. ECG228A
ECG229 .. ED1401C
ED1401D .. ESM738T
ESM749 .. FE1718D
FE1718E .. FMA7A
FMA8A .. FN1F4N
FN1F4Z .. FXT3906SM
FXT449 .. GD362
GD363 .. GES929
GES93 .. GS9018
GS9018D .. GT402B
GT402D .. HEPS0015
HEPS0016 .. HSB649A
HSB649T .. IMBT3904
IMBT3905 .. JE9143A
JE9143B .. KRA111M
KRA111S .. KRC104
KRC104M .. KRC853F
KRC853U .. KSB1366
KSB1366G .. KSC3125
KSC3158 .. KSD569O
KSD569R .. KT203A
KT203AM .. KT336G
KT336V .. KT630G
KT630V .. KT815B9
KT815G .. KT9115A
KT9116A .. KTC1020
KTC1026 .. KTN2369
KTN2369A .. MCH4017
MCH4020 .. MJ11017
MJ11018 .. MJD50TF
MJD5731 .. MJE701T
MJE702 .. MMBC1623L3
MMBC1623L4 .. MMBT8599
MMBT9012 .. MP1530
MP1530A .. MP5142
MP5143 .. MPS3405
MPS3414 .. MPSL01
MPSL01A .. MSB1218ART1
MSB709 .. NA12HY
NA21E .. NB014EY
NB014EZ .. NB212Z
NB212ZG .. NKT142
NKT143 .. NPS5816
NPS5855 .. NTE2332
NTE2334 .. OC82DM
OC83 .. PBSS5350SS
PBSS5350T .. PMBT3905
PMBT3906 .. PT3151A
PT3501 .. RCA1B04
RCA1B05 .. RN1703
RN1703JE .. RN2902FE
RN2902FS .. S1807
S1808 .. SDT9308
SDT9309 .. SK1641
SK2604A .. SRA2219UF
SRC1201 .. STC5649
STC5650 .. SZD5564
SZD5706 .. TA2606
TA2616 .. TIP146T
TIP147 .. TIS51
TIS52 .. TN4140
TN4141 .. TPC6504
TPC6601 .. UN1115Q
UN1115R .. UN921K
UN921L .. ZT60
ZT600 .. ZTX451
ZTX452 .. ZXTP749F
ZXTPS717MC .. ZXTPS720MC
 
2SA1727 All Transistors Data Sheet. Parameters and Characteristics. Transistor Database. Cross Reference Search
 

2SA1727 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SA1727

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 10

Maximum collector-base voltage |Ucb|, V: 400

Maximum collector-emitter voltage |Uce|, V: 400

Maximum emitter-base voltage |Ueb|, V: 0

Maximum collector current |Ic max|, A: 0.1

Maksimalna temperatura (Tj), °C: 175

Transition frequency (ft), MHz:

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 280

Noise Figure, dB: -

Package of 2SA1727 transistor: TO236

2SA1727 Equivalent Transistors - Cross-Reference Search

2SA1727 PDF doc:

1.1. 2sa1812_2sa1727_2sa1776.pdf Size:250K _rohm

2SA1727
2SA1727
2SA1812 / 2SA1727 / 2SA1776 Transistors High-voltage Switching Transistor ( 400V, 0.5A) 2SA1812 / 2SA1727 / 2SA1776 Features 1) High breakdown voltage, BVCEO= 400V. 2) Low saturation voltage, typically VCE (sat) = 0.3V at IC / IB = 100mA / 10mA. 3) High switching speed, typically tf : 1 s at IC = 100mA. 4) Wide SOA (safe operating area). Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400 V Emitter-base voltage VEBO 7 V 0.5 A (DC) Collector current IC 1.0 A (Pulse) 1 0.5 W 2SA1812 2 W 2 Collector power 1 W PC 2SA1727 dissipation 10 W (Tc 25°C) 2SA1776 1 W 3 Junction temperature Tj 150 °C Storage temperature °C Tstg 55 to +150 1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board. 3 When t = 1.7mm and the foil collector area on the PC board is 1cm2 or greater. Packaging specifications and hFE Type 2SA1812 2SA1727 2SA1776 Package MPT3 CPT3 ATV hFE PQ PQ PQ Mar

4.1. 2sa1721.pdf Size:245K _toshiba

2SA1727
2SA1727
2SA1721 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1721 High Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = -300 V, VCEO = -300 V • Low saturation voltage: V = -0.5 V (max) CE (sat) • Small collector output capacitance: C = 5.5 pF (typ.) ob • Complementary to 2SC4497 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -300 V Collector-emitter voltage VCEO -300 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Base current IB -20 mA JEDEC TO-236MOD Collector power dissipation PC 150 mW JEITA SC-59 Junction temperature Tj 150 °C TOSHIBA 2-3F1A Storage temperature range Tstg -55~150 °C Weight: 0.012 g (typ.) Marking 1 2003-03-27 2SA1721 Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut

4.2. 2sa1729.pdf Size:97K _sanyo

2SA1727
2SA1727
Ordering number:EN3133 PNP Epitaxial Planar Silicon Transistor 2SA1729 High-Speed Switching Applications Features Package Dimensions · Adoption of FBET, MBIT processes. unit:mm · Large current capacity. 2038 · Low collector-to-emitter saturation voltage. [2SA1729] · Fast switching speed. · Small-sized package. E : Emitter C : Collector B : Base SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –50 V Collector-to-Emitter Voltage VCEO –40 V Emitter-to-Base Voltage VEBO –5 V Collector Current IC –1.5 A Collector Current (Pulse) ICP –3 A Mounted on ceramic board (250mm2? 0.8mm) Collector Dissipation PC 1.3 W Junction Temperature Tj 150 ?C ?C Storage Temperature Tstg –55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–40V, IE=0 –1 µA Emitter Cutoff Current IEBO VE

4.3. 2sa1724.pdf Size:81K _sanyo

2SA1727
2SA1727
Ordering number:EN3159A PNP Epitaxial Planar Silicon Transistor 2SA1724 High-Definiton CRT Display Video Output Driver Applications Features Package Dimensions · High fT (fT=1.5GHz typ). unit:mm · High current (IC=300mA). 2038A · Adoption of FBET process. [2SA1724] 1 : Base 2 : Collector 3 : Emitter Marking : AJ (Bottom view) Specifications SANYO : PCP Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –30 V Collector-to-Emitter Voltage VCEO –20 V Emitter-to-Base Voltage VEBO –3 V Collector Current IC –300 mA Collector Current (Pulse) ICP –600 mA Collector Dissipation PC 500 mW Mounted on ceremic board (250mm2? 0.8mm) 1.3 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–20V, IE=0 –0.1 µA Emitter Cutoff Current IEBO VEB=–2V, IC=0 –1.0 µA D

4.4. 2sa1723.pdf Size:80K _sanyo

2SA1727
2SA1727
Ordering number:EN4668 PNP Epitaxial Planar Silicon Transistors 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions · Wideband amplifiers. unit:mm · High-frequency drivers. 2009B [2SA1723] Features · High fT (fT=1.5GHz typ). · High current (IC=300mA). · Adoption of FBET process. 1 : Emitter 2 : Collector 3 : Base JEDEC : TO-126 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –30 V Collector-to-Emitter Voltage VCEO –20 V Emitter-to-Base Voltage VEBO –3 V Collector Current IC –300 mA Collector Current (Pulse) ICP –600 mA Collector Dissipation PC 1.2 W Tc=25?C 5 W Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–20V, IE=0 –0.1 µA Emitter Cutoff Current IEBO VEB=–2V, IC=0 –1.0

4.5. 2sa1728.pdf Size:91K _sanyo

2SA1727
2SA1727
Ordering number:EN3132 PNP Epitaxial Planar Silicon Transistor 2SA1728 High-Speed Switching Applications Features Package Dimensions · Adoption of FBET process. unit:mm · Low collector-to-emitter saturation voltage. 2018A · Fast switching speed. [2SA1728] · Small-sized package. C : Collector B : Base E : Emitter SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO –50 V Collector-to-Emitter Voltage VCEO –40 V Emitter-to-Base Voltage VEBO –5 V Collector Current IC –500 mA Collector Current (Pulse) ICP –1 A Collector Dissipation PC 200 mW ?C Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Collector Cutoff Current ICBO VCB=–40V, IE=0 –0.5 µA Emitter Cutoff Current IEBO VEB=–3V, IC=0 –0.5 µA DC Current Gain hFE1 VCE=–2V, IC=–50mA 70* 280* hFE2 VCE=–2V, IC=–5

4.6. 2sa1720.pdf Size:113K _nec

2SA1727
2SA1727
DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SA1720 is a high-speed Darlington power transistor. ORDERING INFORMATION This transistor is ideal for high-precision control such as PWM Part No. Package control for pulse motors or brushless motors in OA and FA equipment. 2SA1720 Isolated TO-220 FEATURES • Mold package that does not require an insulating board or insulation bushing • On-chip C-to-E reverse diode • Fast switching speed ABSOLUTE MAXIMUM RATINGS (TA = 25° °C) ° ° Parameter Symbol Conditions Ratings Unit Collector to base voltage VCBO -100 V Collector to emitter voltage VCEO -100 V Emitter to base voltage VEBO -8.0 V Collector current (DC) IC(DC) -10, +3.0 A –20 A Collector current (pulse) IC(pulse) PW ? 10 ms, + duty cycle ? 50% Base current (DC) IB(DC) -1.0 A Total power dissipation PT TC = 25°C 25 W TA = 25°C 2.0 W Junction temperature Tj 150 °C Storage te

4.7. 2sa1725.pdf Size:188K _jmnic

2SA1727
2SA1727
JMnic Product Specification Silicon PNP Power Transistors 2SA1725 DESCRIPTION ·With TO-220F package ·Complement to type 2SC4511 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A IB Base current -3 A PC Collector dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SA1725 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-2A ;IB=-0.2A -0.5 V ICBO Collector cut

4.8. 2sa1726.pdf Size:192K _jmnic

2SA1727
2SA1727
JMnic Product Specification Silicon PNP Power Transistors 2SA1726 DESCRIPTION · ·With TO-220C package ·Complement to type 2SC4512 APPLICATIONS ·Audio and General Purpose PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A IB Base current -3 A PC Collector dissipation TC=25? 50 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? JMnic Product Specification Silicon PNP Power Transistors 2SA1726 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE=? -80 V VCE(sat) Collector-emitter saturation voltage IC=-2A; IB=-0.2A -0.5 V ICBO Collector cut-off current

4.9. 2sa1725.pdf Size:27K _sanken-ele

2SA1727
2SA1727
2SA1725 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4511) Application : Audio and General Purpose External Dimensions FM20(TO220F) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol Ratings Unit Symbol Conditions Ratings Unit ±0.2 4.2 ±0.2 10.1 c0.5 VCBO –80 V VCB=–80V –10max µ A 2.8 ICBO VCEO –80 V IEBO VEB=–6V –10max µ A VEBO V(BR)CEO IC=–25mA –80min V –6 V ±0.2 o3.3 IC hFE VCE=–4V, IC=–2A 50min? a –6 A b IB VCE(sat) IC=–2A, IB=–0.2A –0.5max V –3 A PC fT VCE=–12V, IE=0.5A 20typ MHz 30(Tc=25°C) W Tj COB VCB=–10V, f=1MHz 150typ pF 150 °C ±0.15 1.35 ±0.15 Tstg –55 to +150 °C ? hFE Rank O(50 100), P(70 140), Y(90 180) 1.35 to to to 0.85+0.2 -0.1 0.45+0.2 2.4 -0.1 ±0.2 2.54 2.54 Typical Switching Characteristics (Common Emitter) ±0.2 2.2 VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Part No. B C E –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.

4.10. 2sa1726.pdf Size:23K _sanken-ele

2SA1727
2SA1727
2SA1726 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4512) Application : Audio and General Purpose External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25°C) Electrical Characteristics (Ta=25°C) Symbol 2SA1726 Symbol Conditions 2SA1726 Unit Unit ±0.2 4.8 ±0.2 10.2 ±0.1 2.0 VCBO –80 ICBO VCB=–80V –10max µ A V VCEO –80 IEBO VEB=–6V –10max µ A V VEBO –6 V(BR)CEO IC=–25mA –80min V V ±0.2 o3.75 a IC –6 hFE VCE=–4V, IC=–2A 50min? A b VCE(sat) IC=–2A, IB=–0.2A –0.5max V IB –3 A fT VCE=–12V, IE=0.5A 20typ MHz PC 50(Tc=25°C) W 1.35 Tj COB VCB=–10V, f=1MHz 150typ pF 150 °C Tstg –55 to +150 0.65+0.2 -0.1 °C to to to ? hFE Rank O(50 100), P(70 140), Y(90 180) 2.5 2.5 1.4 Typical Switching Characteristics (Common Emitter) B C E Weight : Approx 2.6g VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf (V) (?) (A) (V) (V) (A) (A) (µ s) (µ s) (µ s) a. Type No. b. Lot No. –30 10 –3 –10 5 –0.3 0.3 0.18typ 1.10typ 0.21typ IC–VCE Characteristic

4.11. 2sa1725.pdf Size:188K _inchange_semiconductor

2SA1727
2SA1727
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1725 DESCRIPTION ·With TO-220F package ·Complement to type 2SC4511 APPLICATIONS ·Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A IBB Base current -3 A PC Collector dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1725 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ; IBB=0 -80 V VCEsat Collector-emitter saturation voltage IC=-2A

4.12. 2sa1726.pdf Size:140K _inchange_semiconductor

2SA1727
2SA1727
INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1726 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.5(V)(Max)@IC= -2A ·High Switching Speed ·Complement to Type 2SC4512 APPLICATIONS ·Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -6 A IBB Base Collector Current-Continuous -3 A Total Power Dissipation PC @ TC=25? 50 W TJ Junction Temperature 150 ? Storage Temperature Range -55~150 ? Tstg INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1726 ELECTRICAL CHARACTERISTICS TC=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA ; IB= 0 -80 V Collector-Emitter Saturation Voltage IC= -2A; IBB= -0.

See also transistors datasheet: 2SA1721 , 2SA1722 , 2SA1724 , 2SA1725 , 2SA1725O , 2SA1725P , 2SA1725Y , 2SA1726 , BEL187 , 2SA1728 , 2SA1729 , 2SA173 , 2SA1730 , 2SA1731 , 2SA1732 , 2SA1733 , 2SA1733K .

Keywords

 2SA1727 Datasheet  2SA1727 Datenblatt  2SA1727 RoHS  2SA1727 Distributor
 2SA1727 Application Notes  2SA1727 Component  2SA1727 Circuit  2SA1727 Schematic
 2SA1727 Equivalent  2SA1727 Cross Reference  2SA1727 Data Sheet  2SA1727 Fiche Technique

 

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