2SA726 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SA726

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 0.1

Maximum collector-base voltage |Ucb|, V: 50

Maximum collector-emitter voltage |Uce|, V: 50

Maximum emitter-base voltage |Ueb|, V: 5

Maximum collector current |Ic max|, A: 0.1

Maximum junction temperature (Tj), °C: 175

Transition frequency (ft), MHz: 100

Collector capacitance (Cc), pF: 12

Forward current transfer ratio (hFE), min: 55

Noise Figure, dB: -

Package of 2SA726 transistor: TO92

2SA726 Equivalent Transistors - Cross-Reference Search

2SA726 PDF document for downloads:

5.1. 2sa720a_e.pdf Size:42K _panasonic

Transistor 2SA720A Silicon PNP epitaxial planer type For low-frequency driver amplification Unit: mm Complementary to 2SC1318A 5.0� 0.2 4.0� 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO �80 V 0.45 �0.1 0.45 �0.1 Collector to emitter voltage VCEO �70 V 1.27 1.27 Emitter to base voltage VEBO �5 V Peak collector current ICP �1 A 1 2 3 1:Emitter Collector current IC � 0.5 A 2:Collector 3:Base Collector power dissipation PC 625 mW 2.54� 0.15 JEDEC:TO�92 Junction temperature Tj 150 ?C EIAJ:SC�43A Storage temperature Tstg �55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = �20V, IE = 0 � 0.1 � A Collector to base voltage VCBO IC = �10� A, IE = 0 �80 V Collector to emitter voltage VCEO IC =

5.2. 2sa719_2sa720.pdf Size:51K _panasonic

Transistor 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Unit: mm Complementary to 2SC1317 and 2SC1318 5.0� 0.2 4.0� 0.2 Features Complementary pair with 2SC1317 and 2SC1318. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to 2SA719 �30 VCBO V +0.2 +0.2 base voltage 2SA720 �60 0.45 �0.1 0.45 �0.1 1.27 1.27 Collector to 2SA719 �25 VCEO V emitter voltage 2SA720 �50 Emitter to base voltage VEBO �5 V 1 2 3 1:Emitter Peak collector current ICP �1 A 2:Collector 3:Base 2.54� 0.15 Collector current IC �500 mA JEDEC:TO�92 Collector power dissipation PC 625 mW EIAJ:SC�43A Junction temperature Tj 150 ?C Storage temperature Tstg �55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = �20V, IE = 0 � 0.1 � A Collector to base 2SA719 �30 VCBO IC = �10� A, IE = 0 V voltage 2SA720 �60 Collector to emi

5.3. 2sa719_2sa720_2sa730_2sa731.pdf Size:49K _hitachi

5.4. 2sa720.pdf Size:507K _secos

2SA720 -0.5 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES ? For low-frequency power amplification and driver amplification. G H ?Emitter ?Collector ?Base CLASSIFICATION OF hFE J A D Product-Rank 2SA720-Q 2SA720-R 2SA720-S Millimeter REF. B Min. Max. Range 85~170 120~240 170~340 A 4.40 4.70 B 4.30 4.70 K C 12.70 - D 3.30 3.81 E 0.36 0.56 F 0.36 0.51 E C F G 1.27 TYP. H 1.10 - J 2.42 2.66 K 0.36 0.76 Collector ?? ?? Base ?? Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -60 V Collector to Emitter Voltage VCEO -50 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -0.5 A Collector Power Dissipation PC 625 mW Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless

See also transistors datasheet: 2SA72 , 2SA720 , 2SA720A , 2SA721 , 2SA722 , 2SA723 , 2SA724 , 2SA725 , 2N3715 , 2SA728 , 2SA728A , 2SA73 , 2SA730 , 2SA731 , 2SA732 , 2SA733 , 2SA738 .

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