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2SA765 Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SA765

Material of transistor: Si

Polarity: PNP

Maximum collector power dissipation (Pc), W: 40

Maximum collector-base voltage |Ucb|, V: 80

Maximum collector-emitter voltage |Uce|, V: 80

Maximum emitter-base voltage |Ueb|, V: 6

Maximum collector current |Ic max|, A: 6

Maximum junction temperature (Tj), °C: 150

Transition frequency (ft), MHz: 10

Collector capacitance (Cc), pF:

Forward current transfer ratio (hFE), min: 30

Noise Figure, dB: -

Package of 2SA765 transistor: TO66

2SA765 Equivalent Transistors - Cross-Reference Search

2SA765 PDF doc:

1.1. 2sa765.pdf Size:147K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA765 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage APPLICATIONS ·Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA765 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0 -80 V V(BR)CBO Collector-base

5.1. 2sa769.pdf Size:69K _wingshing

2SA769 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC1827 ABSOLUTE MAXIMUM RATINGS (T =25? ?) ? ? A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -4 A Collector Dissipation (Tc=25? PC 30 W ? ? ? Junction Temperature Tj 150 ? ? ? ? Storage Temperature Tstg -50~150 ? ELECTRICAL CHARACTERISTICS (TA=25? ?) ? ? Characteristic Symbol Test Condition Min Typ Max Unit Collector Cutoff Current ICBO VCB= -80V , IE=0 -10 µA Emitter Cutoff Current IEBO VEB= -5V , IC=0 10 µA DC Current Gain hFE1 VCE= -4V , IC=-1A 60 240 Collector- Emitter Saturation Voltage VCE(sat) IC=-3A , IB=-0.3A -1.0 V Current Gain Bandwidth Product fT VCE= -2V , IC=-0.5A 8 MHZ Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com

5.2. 2sa766.pdf Size:182K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA766 DESCRIPTION ·With TO-66 package ·High power dissipation ·Complement to type 2SC1450 APPLICATIONS ·Line-operated vertical deflection output ·Medium power amplifier PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -150 V VCEO Collector-emitter voltage Open base -150 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -0.4 A ICM Collector current-peak -1.2 A PC Collector power dissipation TC?80? 20 W Tj Junction temperature 150 ? Tstg Storage temperature -65~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA766 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter

5.3. 2sa769.pdf Size:105K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA769 DESCRIPTION ·With TO-220 package ·Complement to type 2SC1827 APPLICATIONS ·For low frequency power amplifier applicattions PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -80 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -4 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA769 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 -80 V V(BR)CBO Collector-

5.4. 2sa764.pdf Size:147K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA764 DESCRIPTION ·With TO-66 package ·Low collector saturation voltage ·Complement to type 2SC1444 APPLICATIONS ·Desinged for general-purpose power amplifier and applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta=?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -6 V IC Collector current -6 A PC Collector power dissipation TC=25? 40 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA764 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0

5.5. 2sa768.pdf Size:105K _inchange_semiconductor

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA768 DESCRIPTION ·With TO-220 package ·Complement to type 2SC1826 APPLICATIONS ·For low frequency power amplifier applicattions PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -60 V VCEO Collector-emitter voltage Open base -60 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -4 A PC Collector power dissipation TC=25? 30 W Tj Junction temperature 150 ? Tstg Storage temperature -55~150 ? Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA768 CHARACTERISTICS Tj=25? unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 -60 V V(BR)CBO Collector-

See also transistors datasheet: 2SA761-1 , 2SA761-2 , 2SA761S , 2SA762 , 2SA762-1 , 2SA762-2 , 2SA763 , 2SA764 , C102 , 2SA766 , 2SA766S , 2SA767 , 2SA768 , 2SA769 , 2SA77 , 2SA770 , 2SA771 .

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